ʻO ka wafer SiC Epi 4'īniha no MOS a i'ole SBD

ʻO ka epitaxy e pili ana i ka ulu ʻana o kahi papa o nā mea kristal hoʻokahi kiʻekiʻe ma luna o ka ʻili o kahi substrate silicon carbide. I waena o lākou, ʻo ka ulu ʻana o ka papa epitaxial gallium nitride ma luna o kahi substrate silicon carbide semi-insulating ua kapa ʻia ʻo heterogeneous epitaxy; ʻo ka ulu ʻana o kahi papa epitaxial silicon carbide ma luna o ka ʻili o kahi substrate silicon carbide conductive ua kapa ʻia ʻo homogeneous epitaxy.

ʻO ka Epitaxial e kūlike me nā koi hoʻolālā hāmeʻa o ka ulu ʻana o ka papa hana nui, e hoʻoholo nui ana i ka hana o ka chip a me ka hāmeʻa, ʻo ke kumukūʻai o 23%. ʻO nā ʻano nui o ka SiC thin film epitaxy i kēia pae e komo pū ana me: ka hoʻokahe ʻana o ka mahu kemika (CVD), ka molecular beam epitaxy (MBE), ka epitaxy pae wai (LPE), a me ka pulsed laser deposition and sublimation (PLD).

He loulou koʻikoʻi loa ka Epitaxy ma ka ʻoihana holoʻokoʻa. Ma ka hoʻoulu ʻana i nā papa epitaxial GaN ma nā substrates silicon carbide semi-insulating, ua hana ʻia nā wafers epitaxial GaN e pili ana i ka silicon carbide, hiki ke hana hou ʻia i nā mea hana GaN RF e like me nā transistors mobility electron kiʻekiʻe (HEMTs);

Ma ka hoʻoulu ʻana i ka papa epitaxial silicon carbide ma luna o ka substrate conductive e loaʻa ai ka wafer epitaxial silicon carbide, a ma ka papa epitaxial ma ka hana ʻana o nā diode Schottky, nā transistors hopena hapalua-kahua gula-oxygen, nā transistors bipolar puka insulated a me nā mea mana ʻē aʻe, no laila ke ʻano o ka epitaxial i ka hana o ka hāmeʻa he hopena nui loa ia i ka hoʻomohala ʻana o ka ʻoihana a ke pāʻani nei hoʻi i kahi kuleana koʻikoʻi loa.