4 ʻīniha SiC Epi wafer no MOS a i ʻole SBD

4 iniha SiC Epi wafer no MOS a i ʻole SBD Kiʻi Hōʻike

ʻO ka wehewehe pōkole:

Loaʻa iā SiCC kahi laina hana wafer substrate SiC (Silicon Carbide) piha, hoʻohui i ka ulu kristal, ka hana wafer, ka hana wafer, ka poli, ka hoʻomaʻemaʻe a me ka hoʻāʻo. I kēia manawa, hiki iā mākou ke hāʻawi i nā axial a i ʻole off-axis semi-insulating a me semi-conductive 4H a me 6H SiC wafers me ka nui o 5x5mm2, 10x10mm2, 2″, 3″, 4″ a me 6″, e uhaki ana i ka hoʻopau ʻana i nā hemahema, ka hana ʻana i nā hua aniani. a me ka ulu wikiwiki a me nā mea ʻē aʻe Ua haki ʻo ia i nā ʻenehana nui e like me ka hoʻopau ʻana i nā hemahema, nā hua aniani ka hana a me ka ulu wikiwiki, a paipai i ka noiʻi kumu a me ka hoʻomohala ʻana o ka silicon carbide epitaxy, nā mea hana a me nā noiʻi kumu e pili ana.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

ʻO ka Epitaxy e pili ana i ka ulu ʻana o kahi papa o nā mea aniani hoʻokahi kiʻekiʻe kiʻekiʻe ma ka ʻili o kahi substrate silicon carbide. I waena o lākou, ʻo ka ulu ʻana o ka gallium nitride epitaxial layer ma kahi semi-insulating silicon carbide substrate i kapa ʻia he heterogeneous epitaxy; ʻo ka ulu ʻana o kahi papa epitaxial silicon carbide ma ka ʻili o kahi substrate silikon carbide conductive i kapa ʻia he epitaxy homogeneous.

ʻO ka Epitaxial e like me nā koi hoʻolālā o ka ulu ʻana o ka papa hana nui, e hoʻoholo nui i ka hana o ka chip a me ka hāmeʻa, ke kumukūʻai o 23%. ʻO nā ʻano kumu nui o ka epitaxy kiʻiʻoniʻoni ʻoniʻoni SiC ma kēia pae: chemical vapor deposition (CVD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), a pulsed laser deposition and sublimation (PLD).

He loulou koʻikoʻi loa ka Epitaxy i ka ʻoihana holoʻokoʻa. Ma ka hoʻoulu ʻana i nā papa epitaxial GaN ma nā substrates silicon carbide semi-insulating, ua hana ʻia nā wafers epitaxial GaN e pili ana i ka silicon carbide, hiki ke hana hou ʻia i nā mea hana GaN RF e like me nā transistors mobility electron kiʻekiʻe (HEMTs);

Ma ka ulu ʻana i ka papa epitaxial silicon carbide ma ka substrate conductive e kiʻi i ka wafer silicon carbide epitaxial, a ma ka papa epitaxial ma ka hana ʻana o Schottky diodes, gula-oxygen half-field effect transistors, insulated gate bipolar transistors a me nā mea mana ʻē aʻe, no laila ke ʻano o ka maikaʻi. ʻO ka epitaxial ma ka hana o ka hāmeʻa he hopena nui loa i ka hoʻomohala ʻana i ka ʻoihana ke pāʻani nei i kahi hana koʻikoʻi.