6 Inch 4H SEMI Type SiC composite substrate Mānoanoa 500μm TTV≤5μm MOS māka

ʻO ka wehewehe pōkole:

Me ka holomua wikiwiki o nā kamaʻilio 5G a me ka ʻenehana radar, ua lilo ka 6-insulating semi-insulating SiC composite substrate i mea kumu no ka hana ʻana i nā hāmeʻa kiʻekiʻe. Ke hoʻohālikelike ʻia me nā substrate GaAs kuʻuna, mālama kēia substrate i ka resistivity kiʻekiʻe (> 10⁸ Ω·cm) ʻoiai e hoʻomaikaʻi ana i ka conductivity thermal ma mua o 5x, e hoʻoponopono pono ana i nā pilikia dissipation wela i nā mīkini hawewe millimeter. Hiki ke kūkulu ʻia nā mea hoʻonui mana i loko o nā mea hana o kēlā me kēia lā e like me 5G smartphones a me nā kikowaena kamaʻilio satellite ma kēia substrate. Me ka hoʻohana ʻana i kā mākou ʻenehana "buffer layer doping compensation", ua hōʻemi mākou i ka micropipe density ma lalo o 0.5/cm² a loaʻa i ka pohō haʻahaʻa haʻahaʻa microwave o 0.05 dB/mm.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Nā palena ʻenehana

Nā mea	Hōʻike	Nā mea	Hōʻike
Anawaena	150±0.2 mm	ʻO ka maka (Si-maka) ʻākala	Ra≤0.2 nm (5μm×5μm)
Polytype	4H	ʻEke Chip, Scratch, Māhā (nānā ʻike maka)	ʻAʻohe
Kū'ē	≥1E8 Ω·cm	TTV	≤5 μm
Papa hoʻoili Mānoanoa	≥0.4 μm	Warp	≤35 μm
ʻAʻohe (2mm>D>0.5mm)	≤5 ea/Wafer	mānoanoa	500±25 μm

Nā mea nui

1. Kūikawā Kiʻekiʻe-Frequency hana
Hoʻohana ka 6-inch semi-insulating SiC composite substrate i kahi hoʻolālā papa dielectric graded, e hōʻoia ana i ka hoʻololi mau ʻana o ka dielectric o <2% i ka Ka-band (26.5-40 GHz) a me ka hoʻomaikaʻi ʻana i ke kūlike o ka pae e 40%. 15% ka hoʻonui ʻana i ka pono a me ka 20% haʻahaʻa haʻahaʻa i ka hoʻohana ʻana i ka mana i nā modula T/R e hoʻohana ana i kēia substrate.

2. Hoʻokele Thermal Breakthrough
Hiki i ka hana hoʻohuihui "thermal bridge" kū hoʻokahi ke hiki i ka lateral thermal conductivity o 400 W/m·K. Ma 28 GHz 5G base station PA modules, piʻi ka wela o ka hui ma 28°C wale nō ma hope o 24 mau hola o ka hana mau—50°C haʻahaʻa ma mua o nā hoʻonā maʻamau.

3. ʻOi aku ka maikaʻi o ka Wafer
Ma o ke kaʻina ʻo Physical Vapor Transport (PVT) i hoʻopaʻa ʻia, loaʻa iā mākou ka dislocation density <500/cm² a me ka Total Thickness Variation (TTV) <3 μm.
4. Hana Hana-aloha
ʻO kā mākou kaʻina hana hoʻoheheʻe laser i hoʻomohala kūikawā no ka 6-insulating semi-insulating SiC composite substrate e hōʻemi ana i ka nui o ka mokuʻāina ma o ʻelua kauoha o ka nui ma mua o ka epitaxy.

Nā noi nui

1. Nā ʻāpana kumu 5G Base Station
I loko o ka nui MIMO antenna arrays, GaN HEMT mau mea ma 6-insulating semi-insulating SiC composite substrates loaʻa ka 200W mana puka a me ka >65% pono. Hōʻike nā hoʻokolohua kahua ma 3.5 GHz i ka piʻi ʻana o 30% o ka radius uhi.

2. Nā Pūnaehana Hoʻolaha Satellite
Nā transceivers ukali haʻahaʻa-Earth orbit (LEO) e hoʻohana ana i kēia substrate hōʻike i ka 8 dB kiʻekiʻe EIRP ma ka Q-band (40 GHz) ʻoiai e hoʻemi ana i ke kaumaha ma 40%. Ua hoʻohana ʻia nā kikowaena SpaceX Starlink no ka hana nui.

3. Pūnaehana Radar Koa
Hiki i nā modules T/R radar Phased-array ma kēia substrate ke loaʻa i ka bandwidth 6-18 GHz a me ke kiʻi leo haʻahaʻa e like me 1.2 dB, e hoʻonui ana i ka laulā ʻike e 50 km i nā ʻōnaehana radar hoʻolaha mua.

4. Kaʻa Millimeter-Wave Radar
79 GHz automotive radar chips me ka hoʻohana ʻana i kēia substrate e hoʻomaikaʻi i ka hoʻonā angular i 0.5 °, e hālāwai ana i nā koi hoʻokele autonomous L4.

Hāʻawi mākou i kahi hoʻonā lawelawe maʻamau no 6-inch semi-insulating SiC composite substrates. Ma ke ʻano o ka hoʻoponopono ʻana i nā ʻāpana waiwai, kākoʻo mākou i ka hoʻoponopono pololei o ka resistivity i loko o ka laulā o 10⁶-10¹⁰ Ω·cm. ʻOi aku no nā noi koa, hiki iā mākou ke hāʻawi i kahi koho kūʻē ultra-kiʻekiʻe o >10⁹ Ω·cm. Hāʻawi ia i ʻekolu mau kikoʻī mānoanoa o 200μm, 350μm a me 500μm i ka manawa like, me ka hoʻomanawanui i hoʻopaʻa ʻia i loko o ± 10μm, e hālāwai ana i nā koi like ʻole mai nā hāmeʻa kiʻekiʻe a hiki i nā noi mana kiʻekiʻe.

Ma keʻano o nā kaʻina hana lapaʻau, hāʻawi mākou iʻelua mauʻoihanaʻoihana: Chemical Mechanical Polishing (CMP) hiki ke hoʻokō i ka palahalaha o ka honua me Ra<0.15nm, e hālāwai me nā koi ulu epitaxial koi nui loa; ʻO ka ʻenehana lapaʻau epitaxial mākaukau no nā koi hana wikiwiki hiki ke hāʻawi i nā ʻāpana ultra-smooth me Sq<0.3nm a me ke koena o ka mānoanoa oxide <1nm, e hoʻomaʻamaʻa nui i ke kaʻina hana pretreatment ma ka hopena o ka mea kūʻai.

Hāʻawi ʻo XKH i nā hoʻonā kikoʻī kikoʻī no ka 6-inch semi-insulating SiC composite substrates

1. Hoʻopilikino ʻana i ke ʻano o nā mea
Hāʻawi mākou i ke kani resistivity pololei i loko o ka laulā o 10⁶-10¹⁰ Ω·cm, me nā koho resistivity ultra-kiʻekiʻe kūikawā> 10⁹ Ω·cm i loaʻa no nā noi koa/aerospace.

2. Nā kikoʻī mānoanoa
ʻEkolu koho mānoanoa maʻamau:

· 200μm (hoʻonui ʻia no nā hāmeʻa kiʻekiʻe)

· 350μm (nā kikoʻī maʻamau)

· 500μm (i hoʻolālā ʻia no nā noi mana kiʻekiʻe)
· Mālama nā ʻano ʻokoʻa āpau i nā tolerances mānoanoa paʻa o ± 10μm.

3. Nā ʻenehana lapaʻau ʻili

Kemimi Mechanical Polishing (CMP): Loaʻa i ka palahalaha o ka ʻili o ka atomic-level me Ra<0.15nm, e hālāwai me nā koi ulu epitaxial ikaika no ka RF a me nā mea mana.

4. Epi-Makaukau Ili Hana Hana

· Hāʻawi i nā ʻili maʻemaʻe loa me ka Sq<0.3nm ʻōkeke

· Kāohi i ka mānoanoa oxide maoli i <1nm

· Hoʻopau a hiki i ka 3 kaʻina hana mua ma nā hale kūʻai