6 'īniha-8 'īniha LN-on-Si Composite Substrate Mānoanoa 0.3-50 μm Si/SiC/Sapphire o nā mea.

ʻO ka wehewehe pōkole:

ʻO ka 6-inch a hiki i ka 8-inch LN-on-Si composite substrate he mea hana kiʻekiʻe e hoʻohui i nā kiʻi ʻoniʻoni ʻoniʻoni liʻiliʻi lithium niobate (LN) me nā substrates silicon (Si), me nā mānoanoa mai 0.3 μm a 50 μm. Hoʻolālā ʻia ia no ka hana semiconductor kiʻekiʻe a me ka mea hana optoelectronic. Ke hoʻohana nei i nā ʻenehana hoʻopaʻa paʻa kiʻekiʻe a i ʻole epitaxial ulu, e hōʻoia kēia substrate i ka maikaʻi crystalline kiʻekiʻe o ke kiʻi ʻoniʻoni LN me ka hoʻohana ʻana i ka nui wafer nui (6-ʻīniha a 8-ʻīniha) o ka substrate silicon e hoʻomaikaʻi i ka hana pono a me ka uku-pono.
Hoʻohālikelike ʻia me nā mea LN nui maʻamau, ʻo ka 6-inch a 8-inch LN-on-Si composite substrate hāʻawi i ka hoʻohālikelike ʻana i ka wela a me ka paʻa mechanical, e kūpono ana i ka hoʻoili ʻana o ka wafer-level nui. Hoʻohui ʻia, hiki ke koho ʻia nā mea waihona kumu ʻē aʻe e like me SiC a i ʻole sapphire e hoʻokō i nā koi noi kikoʻī, me nā polokalamu RF kiʻekiʻe kiʻekiʻe, nā photonics i hoʻohui ʻia, a me nā sensor MEMS.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Nā palena ʻenehana

0.3-50μm LN/LT ma nā Insulators
Papa luna
Anawaena	6-8 iniha
Kūlana	X, Z, Y-42 etc.
Nā mea waiwai	LT, LN
mānoanoa	0.3-50μm
substrate
Mea waiwai	Si, SiC, Sapphire, Spinel, Quartz

Nā mea nui

ʻO ka 6-inch a 8-inch LN-on-Si composite substrate ka mea i ʻike ʻia e kāna mau waiwai waiwai a me nā ʻāpana tunable, e hiki ai ke hoʻohana ākea i nā ʻoihana semiconductor a me optoelectronic.

1.Large Wafer Compatibility: ʻO ka 6-inch a hiki i ka 8-inch wafer nui e hōʻoia i ka hoʻohui ponoʻole me nā laina hana semiconductor i kēia manawa (eg, nā kaʻina hana CMOS), e ho'ēmi ana i nā kumukūʻai hana a hiki i ka hana nui.

2.High Crystalline Quality: Optimized epitaxial or bonding techniques e hōʻoia i ka haʻahaʻa defect density i ka LN thin film, i mea kūpono no nā modulators optical kiʻekiʻe, nā kānana acoustic wave (SAW), a me nā mea pono ʻē aʻe.

3.Adjustable Thickness (0.3-50 μm): Ultrathin LN layers (<1 μm) ua kūpono i nā kiʻi photonic i hoʻohuiʻia, aʻo nā papa mānoanoa (10-50 μm) e kākoʻo i nā mea mana RF kiʻekiʻe a iʻole nā meaʻike piezoelectric.

4.Multiple Substrate Options: Ma waho aʻe o Si, SiC (high thermal conductivity) aiʻole sapphire (kiʻekiʻe insulation) hiki ke kohoʻia ma keʻano he kumu kumu no ka hoʻokōʻana i nā koi o ke kiʻekiʻe-frequency, ka wela wela, aiʻole ka mana kiʻekiʻe.

5. Thermal and Mechanical Stability: Hāʻawi ka silicon substrate i ke kākoʻo mechanical ikaika, e hōʻemi ana i ka warping a i ʻole ka haki ʻana i ka wā o ka hoʻoili ʻana a me ka hoʻomaikaʻi ʻana i ka huahana.

Hoʻonohonoho kēia mau hiʻohiʻona i ka substrate composite 6-inch a 8-inch LN-on-Si ma ke ʻano he mea makemake no nā ʻenehana ʻokiʻoki e like me ke kamaʻilio 5G, LiDAR, a me quantum optics.

Nā noi nui

Hoʻohana nui ʻia ka substrate composite 6-inch a 8-inihi LN-on-Si i nā ʻoihana ʻenehana kiʻekiʻe ma muli o kāna mau waiwai electro-optic, piezoelectric, a me ka acoustic.

1.Optical Communications and Integrated Photonics: E hiki ai ke kiʻekiʻe-wikiwiki electro-optic modulators, waveguides, a me photonic integrated circuits (PICs), e hoʻoponopono i nā koi bandwidth o nā kikowaenaʻikepili a me nā pūnaewele fiber-optic.

Nā Pūnaewele 2.5G/6G RF: ʻO ka piezoelectric coefficient kiʻekiʻe o LN he mea kūpono ia no nā kānana acoustic wave (SAW) a me nā kānana acoustic wave nui (BAW), e hoʻonui i ka hana hōʻailona ma nā kahua kahua 5G a me nā polokalamu kelepona.

3.MEMS a me nā Sensors: ʻO ka hopena piezoelectric o LN-on-Si e hoʻoikaika i nā accelerometers kiʻekiʻe-sensitivity, biosensors, a me nā transducers ultrasonic no nā noi olakino a me nā ʻoihana.

4.Quantum Technologies: Ma ke ʻano he mea ʻike ʻole linear, hoʻohana ʻia nā kiʻiʻoniʻoni lahilahi LN i nā kumu kukui quantum (e laʻa, entangled photon pairs) a me nā ʻāpana quantum i hoʻohui ʻia.

5.Lasers a me Nonlinear Optics: Hiki i nā ʻāpana Ultrathin LN ke hoʻohana pono i ka lua-harmonic generation (SHG) a me ka optical parametric oscillation (OPO) no ka hana laser a me ka nānā ʻana spectroscopic.

ʻO ka 6-inch a 8-inch LN-on-Si composite substrate i hoʻohālikelike ʻia e hiki ai i kēia mau mea hana ke hana ʻia i loko o nā paina wafer nui, e hōʻemi nui ana i nā kumukūʻai hana.

Hoʻopilikino a me nā lawelawe

Hāʻawi mākou i ke kākoʻo ʻenehana piha a me nā lawelawe hana maʻamau no ka substrate composite LN-on-Si 6-inch a 8-inch e hoʻokō i nā pono R&D a me nā pono hana.

1.Custom Fabrication: LN film mānoanoa (0.3-50 μm), crystal orientation (X-cut/Y-cut), a me ka substrate mea (Si/SiC/sapphire) hiki ke hoʻolikelike ʻia no ka hoʻokō pono ʻana i ka hana.

2.Wafer-Level Processing: Hāʻawi nui i nā wafers 6-inch a me 8-inch, me nā lawelawe hope e like me ka dicing, polishing, a me ka uhiʻana, e hōʻoia ana ua mākaukau nā substrate no ka hoʻohui pūnaewele.

3. Kūkākūkā Kūkākūkā a me ka ho'āʻoʻana: Keʻano o nā mea waiwai (eg, XRD, AFM), electro-optic hana ho'āʻo, a me ke kākoʻo simulation mea e hoʻokō i ka hōʻoiaʻana o ka hoʻolālā.

ʻO kā mākou misionari ka hoʻokumu ʻana i ka substrate composite 6-inch a 8-inch LN-on-Si ma ke ʻano he kumu kumu kumu no nā noi optoelectronic a me semiconductor, e hāʻawi ana i ke kākoʻo hope mai ka R&D i ka hana nui.

Ka hopena

ʻO ka 6-inch a 8-inch LN-on-Si composite substrate, me kona nui wafer nui, ʻoi aku ka maikaʻi o nā mea waiwai, a me ka versatility, ke alakaʻi nei i nā holomua i nā kamaʻilio optical, 5G RF, a me nā ʻenehana quantum. Inā no ka hana nui a i ʻole nā hoʻonā i hana ʻia, hāʻawi mākou i nā substrates hilinaʻi a me nā lawelawe hoʻohui e hoʻoikaika i ka ʻenehana ʻenehana.