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6 ʻīniha ʻO ke kristal hoʻokahi alakaʻi SiC ma ka substrate composite polycrystalline SiC Diameter 150mm ʻAno P ʻano N

6 ʻīniha Conductive single crystal SiC ma ka polycrystalline SiC composite substrate Diameter 150mm P type N type Kiʻi i hōʻike ʻia
  • 6 ʻīniha ʻO ke kristal hoʻokahi alakaʻi SiC ma ka substrate composite polycrystalline SiC Diameter 150mm ʻAno P ʻano N
  • 6 ʻīniha ʻO ke kristal hoʻokahi alakaʻi SiC ma ka substrate composite polycrystalline SiC Diameter 150mm ʻAno P ʻano N

Wehewehe Pōkole:

ʻO ka 6-'īniha conductive monocrystalline SiC ma ka polycrystalline SiC composite substrate e hōʻike ana i kahi hopena mea silicon carbide (SiC) hou i hoʻolālā ʻia no nā mea uila mana kiʻekiʻe, mahana kiʻekiʻe, a me ke alapine kiʻekiʻe. Loaʻa i kēia substrate kahi papa hana SiC kristal hoʻokahi i hoʻopaʻa ʻia i kahi kumu polycrystalline SiC ma o nā kaʻina hana kūikawā, e hoʻohui ana i nā waiwai uila kiʻekiʻe o ka monocrystalline SiC me nā pono kumukūʻai o ka polycrystalline SiC.
Ke hoʻohālikelike ʻia me nā substrates SiC monocrystalline piha maʻamau, ʻo ka 6-'īniha conductive monocrystalline SiC ma ka substrate composite polycrystalline SiC e mālama i ka neʻe ʻana o ka electron kiʻekiʻe a me ke kū'ē ʻana o ka voltage kiʻekiʻe me ka hoʻemi nui ʻana i nā kumukūʻai hana. ʻO kona nui wafer 6-'īniha (150 mm) e hōʻoiaʻiʻo ana i ka kūlike me nā laina hana semiconductor e kū nei, e hiki ai ke hoʻonui ʻia ka hana ʻana. Eia kekahi, ʻae ka hoʻolālā conductive i ka hoʻohana pololei ʻana i ka hana ʻana o nā mea mana (e laʻa, MOSFET, diodes), e hoʻopau ana i ka pono no nā kaʻina hana doping hou a hoʻomaʻalahi i nā kahe hana hana.


Nā hiʻohiʻona

Nā palena loea

Nui:

6 ʻīniha

Anawaena:

150 mm

Mānoanoa:

400-500 μm

Nā Palena Kiʻiʻoniʻoni SiC Monocrystalline

ʻAno like:

4H-SiC a i ʻole 6H-SiC

Ka Hoʻohuihui ʻana o ka Doping:

1×10¹⁴ - 1×10¹⁸ kenimika⁻³

Mānoanoa:

5-20 μm

Ke kū'ē ʻana o ka pepa:

10-1000 Ω/kuea kuea

Ka Neʻe ʻana o ka Elekene:

800-1200 cm²/Vs

Ka Neʻe ʻana o ka Lua:

100-300 kenimika²/Vs

Nā Palena Papa Buffer SiC Polycrystalline

Mānoanoa:

50-300 μm

Ka Hoʻokele Wela:

150-300 W/m·K

Nā Palena Substrate Monocrystalline SiC

ʻAno like:

4H-SiC a i ʻole 6H-SiC

Ka Hoʻohuihui ʻana o ka Doping:

1×10¹⁴ - 1×10¹⁸ kenimika⁻³

Mānoanoa:

300-500 μm

Ka nui o ka palaoa:

> 1 mm

ʻO ka ʻilikai:

< 0.3 mm RMS

Nā Waiwai Mīkini a me nā Waiwai Uila

Paʻakikī:

9-10 Mohs

Ikaika Hoʻopaʻa:

3-4 GPa

Ikaika Hoʻopaʻa:

0.3-0.5 GPa

Ka ikaika o ke kahua wāwahi:

> 2 MV/cm

Ka Hoʻomanawanui ʻana i ka Maʻi Holoʻokoʻa:

> 10 Mrad

Ke kū'ē ʻana i ka hopena hanana hoʻokahi:

> 100 MeV·cm²/mg

Ka Hoʻokele Wela:

150-380 W/m·K

Pae Mahana Hana:

-55 a i 600°C

 

Nā ʻano koʻikoʻi

ʻO ka 6-'īniha conductive monocrystalline SiC ma ka polycrystalline SiC composite substrate e hāʻawi i kahi kaulike kū hoʻokahi o ka hoʻonohonoho mea a me ka hana, e kūpono ana no nā ʻano ʻoihana koi:

1. Ka Pono o ke Kumukūʻai: Hoʻemi nui ke kumu polycrystalline SiC i nā kumukūʻai i hoʻohālikelike ʻia me ka SiC monocrystalline piha, ʻoiai ʻo ka papa hana monocrystalline SiC e hōʻoiaʻiʻo ana i ka hana kūpono o ka hāmeʻa, kūpono no nā noi koʻikoʻi i ke kumukūʻai.

2. Nā Waiwai Uila Kūikawā: Hōʻike ka papa SiC monocrystalline i ka neʻe ʻana o ka mea lawe kiʻekiʻe (>500 cm²/V·s) a me ka haʻahaʻa o ka hemahema, e kākoʻo ana i ka hana alapine kiʻekiʻe a me ka mana kiʻekiʻe.

3. Paʻa Mahana Kiʻekiʻe: ʻO ke kūpaʻa wela kiʻekiʻe o SiC (>600°C) e hōʻoiaʻiʻo ana e paʻa mau ka substrate composite ma lalo o nā kūlana koʻikoʻi, e kūpono ana no nā kaʻa uila a me nā noi mīkini ʻoihana.

Ka Nui o ka Wafer Maʻamau 4.6-'īniha: Ke hoʻohālikelike ʻia me nā substrates SiC 4-'īniha kuʻuna, hoʻonui ke ʻano 6-'īniha i ka hua chip ma mua o 30%, e hōʻemi ana i nā kumukūʻai o kēlā me kēia ʻāpana hāmeʻa.

5. Hoʻolālā Alakaʻi: ʻO nā papa ʻano N a i ʻole P-type i hoʻopili mua ʻia e hōʻemi i nā ʻanuʻu hoʻokomo ion i ka hana ʻana o nā hāmeʻa, e hoʻomaikaʻi ana i ka pono hana a me ka hua.

6. Hoʻokele Wela Kiʻekiʻe: ʻO ke alakaʻi wela o ke kumu polycrystalline SiC (~120 W/m·K) e hoʻokokoke aku i ka monocrystalline SiC, e hoʻoponopono pono ana i nā pilikia hoʻoheheʻe wela i nā mea hana mana kiʻekiʻe.

Hoʻonoho kēia mau ʻano i ka 6-'īniha conductive monocrystalline SiC ma ka polycrystalline SiC composite substrate ma ke ʻano he hopena hoʻokūkū no nā ʻoihana e like me ka ikehu hou, ka halihali kaʻaahi, a me ka aerospace.

Nā Noi Mua

Ua hoʻolaha pono ʻia ka 6-'īniha conductive monocrystalline SiC ma ka polycrystalline SiC composite substrate i kekahi mau kahua koi nui:
1. Nā Mana Hoʻokele Kaʻa Uila: Hoʻohana ʻia i nā MOSFET SiC voltage kiʻekiʻe a me nā diode e hoʻonui i ka pono o ka inverter a hoʻonui i ka laulā o ka pākaukau (e laʻa, Tesla, nā hiʻohiʻona BYD).

2. Nā Hoʻokele Motika ʻOihana: Hoʻāla i nā modula mana wela kiʻekiʻe, alapine hoʻololi kiʻekiʻe, e hōʻemi ana i ka hoʻohana ʻana i ka ikehu i nā mīkini kaumaha a me nā turbine makani.

3.Nā Inverters Photovoltaic: Hoʻomaikaʻi nā mea SiC i ka pono o ka hoʻololi ʻana o ka lā (>99%), ʻoiai ke kumu hoʻohui e hōʻemi hou aku i nā kumukūʻai ʻōnaehana.

4.Rail Transportation: Hoʻopili ʻia i nā mea hoʻololi traction no nā ʻōnaehana kaʻaahi wikiwiki a me nā ʻōnaehana subway, e hāʻawi ana i ke kū'ē uila kiʻekiʻe (>1700V) a me nā mea ʻano paʻa.

5.Aerospace: Kūpono no nā ʻōnaehana mana ukali a me nā kaapuni hoʻokele mīkini mokulele, hiki ke kū i nā mahana koʻikoʻi a me ka radiation.

I ka hana ʻana, ʻo ka 6-'īniha conductive monocrystalline SiC ma ka polycrystalline SiC composite substrate e kūlike piha me nā kaʻina hana SiC maʻamau (e laʻa, lithography, etching), ʻaʻole pono e hoʻopukapuka kālā hou aʻe.

Nā lawelawe XKH

Hāʻawi ʻo XKH i ke kākoʻo piha no ka 6-'īniha conductive monocrystalline SiC ma ka polycrystalline SiC composite substrate, e uhi ana i ka R&D a i ka hana nui ʻana:

1. Hoʻopilikino: Mānoanoa o ka papa monocrystalline hiki ke hoʻololi ʻia (5–100 μm), ka nui o ka doping (1e15–1e19 cm⁻³), a me ke kuhikuhi ʻana o ke aniani (4H/6H-SiC) e hoʻokō ai i nā koi o nā hāmeʻa like ʻole.

2. Hana ʻana i ka Wafer: Hoʻolako nui o nā substrates 6-'īniha me ka lahilahi ʻana o ke kua a me nā lawelawe metallization no ka hoʻohui plug-and-play.

3. Hōʻoia ʻenehana: Hoʻokomo pū ʻia ka loiloi crystallinity XRD, ka hoʻāʻo ʻana i ka hopena Hall, a me ke ana ʻana o ke kūpaʻa wela e wikiwiki ai ka hōʻoia ʻana o nā mea.

4. Hoʻolālā wikiwiki: nā laʻana 2- a 4-ʻīniha (kaʻina hana like) no nā ʻoihana noiʻi e hoʻolalelale i nā pōʻaiapuni hoʻomohala.

5. Ka Nānā Haʻalele & Ka Hoʻonui ʻana: Nā hoʻonā pae mea no nā pilikia hana (e laʻa, nā hemahema o ka papa epitaxial).

ʻO kā mākou misionari ka hoʻokumu ʻana i ka 6-'īniha conductive monocrystalline SiC ma ka polycrystalline SiC composite substrate ma ke ʻano he hopena hana uku-makemake ʻia no nā mea uila mana SiC, e hāʻawi ana i ke kākoʻo hoʻomaka a hiki i ka hopena mai ka prototyping a i ka hana nui.

Hopena

ʻO ka 6-'īniha conductive monocrystalline SiC ma ka polycrystalline SiC composite substrate e hoʻokō i kahi kaulike holomua ma waena o ka hana a me ke kumukūʻai ma o kāna ʻano hana hybrid mono/polycrystalline hou. I ka hoʻonui ʻana o nā kaʻa uila a me ka holomua ʻana o ka Industry 4.0, hāʻawi kēia substrate i kahi kumu waiwai hilinaʻi no nā mea uila mana o ka hanauna e hiki mai ana. Hoʻokipa ʻo XKH i nā hui like ʻana e ʻimi hou aku i ka hiki o ka ʻenehana SiC.

6'īniha SiC kristal hoʻokahi ma ka substrate composite polycrystalline SiC 2
6'īniha SiC kristal hoʻokahi ma ka substrate composite polycrystalline SiC 3
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