6'īniha GaN-Ma-Sapphire
ʻO ka wafer epitaxial Gallium nitride 150mm 6'īniha GaN ma luna o ka Silicon/Sapphire/SiC Epi-layer
ʻO ka wafer substrate sapphire 6-'īniha he mea semiconductor kiʻekiʻe ia i haku ʻia me nā papa o ka gallium nitride (GaN) i ulu ʻia ma luna o kahi substrate sapphire. Loaʻa i ka mea nā waiwai halihali uila maikaʻi loa a kūpono no ka hana ʻana i nā mea semiconductor mana kiʻekiʻe a me ke alapine kiʻekiʻe.
ʻAno hana: Pili ke kaʻina hana i ka ulu ʻana o nā papa GaN ma luna o kahi substrate sapphire me ka hoʻohana ʻana i nā ʻano hana holomua e like me ka metal-organic chemical vapor deposition (MOCVD) a i ʻole molecular beam epitaxy (MBE). Hana ʻia ke kaʻina hana deposition ma lalo o nā kūlana i kāohi ʻia e hōʻoia i ke kiʻekiʻe o ke kristal a me ka ʻili like.
Nā noi 6'īniha GaN-On-Sapphire: Hoʻohana nui ʻia nā ʻāpana substrate sapphire 6-'īniha i nā kamaʻilio microwave, nā ʻōnaehana radar, ʻenehana uea ʻole a me ka optoelectronics.
ʻO kekahi mau noi maʻamau e komo pū me
1. Mea hoʻonui mana Rf
2. ʻOihana kukui LED
3. Nā lako kamaʻilio pūnaewele uea ʻole
4. Nā mea uila i kahi mahana kiʻekiʻe
5. Nā mea hana optoelectronic
Nā kikoʻī huahana
- Nui: ʻO ke anawaena o ke substrate he 6 ʻīniha (ma kahi o 150 mm).
- ʻAno o ka ʻili: Ua hoʻopili maikaʻi ʻia ka ʻili e hāʻawi i ka maikaʻi o ke aniani.
- Mānoanoa: Hiki ke hoʻopilikino ʻia ka mānoanoa o ka papa GaN e like me nā koi kikoʻī.
- Pūʻolo: Hoʻopili pono ʻia ke substrate me nā mea anti-static e pale aku ai i ka hōʻino ʻana i ka wā e lawe ʻia ana.
- Nā lihi hoʻonoho: Loaʻa i ka substrate nā lihi hoʻonoho kikoʻī e hoʻomaʻalahi i ka hoʻonohonoho ʻana a me ka hana i ka wā o ka hoʻomākaukau ʻana i ka hāmeʻa.
- Nā palena ʻē aʻe: Hiki ke hoʻoponopono ʻia nā palena kikoʻī e like me ka lahilahi, ka resistivity a me ka doping concentration e like me nā koi o ka mea kūʻai aku.
Me ko lākou mau waiwai waiwai kiʻekiʻe a me nā hoʻohana like ʻole, ʻo nā wafer substrate sapphire 6-'īniha kahi koho hilinaʻi no ka hoʻomohala ʻana i nā hāmeʻa semiconductor hana kiʻekiʻe ma nā ʻoihana like ʻole.
| Pākuʻi | 6” 1mm <111> ʻano-p Si | 6” 1mm <111> ʻano-p Si |
| ʻAwelike Mānoanoa Epi | ~5um | ~7um |
| ʻEpi ThickUnif | <2% | <2% |
| Kakaka | +/-45um | +/-45um |
| Ka haki ʻana | <5mm | <5mm |
| BV Kū pololei | >1000V | >1400V |
| HEMT Al% | 25-35% | 25-35% |
| HEMT MānoanoaAvg | 20-30nm | 20-30nm |
| Pāpale SiN Insitu | 5-60nm | 5-60nm |
| 2DEG conc. | ~1013cm-2 | ~1013cm-2 |
| Ka neʻe ʻana | ~2000 kenimika2/Vs (<2%) | ~2000 kenimika2/Vs (<2%) |
| Rsh | <330ohm/kuea kuea (<2%) | <330ohm/kuea kuea (<2%) |
Kiʻikuhi kikoʻī
