6 iniha GaN-On-Sapphire

ʻO ka wehewehe pōkole:

150mm 6 iniha GaN ma Silicon/Sapphire/SiC Epi-layer wafer Gallium nitride epitaxial wafer

ʻO ka 6-inch sapphire substrate wafer he mea semiconductor kiʻekiʻe i loaʻa nā papa o gallium nitride (GaN) i ulu ma luna o kahi substrate sapphire. Loaʻa i ka mea waiwai nā waiwai lawe uila a kūpono no ka hana ʻana i nā mea semiconductor kiʻekiʻe a me nā alapine kiʻekiʻe.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

150mm 6 iniha GaN ma Silicon/Sapphire/SiC Epi-layer wafer Gallium nitride epitaxial wafer

Hana ʻia: ʻO ke kaʻina hana e ulu ana i nā papa GaN ma kahi substrate sapphire me ka hoʻohana ʻana i nā ʻenehana holomua e like me ka metal-organic chemical vapor deposition (MOCVD) a i ʻole molecular beam epitaxy (MBE). Hana ʻia ke kaʻina hana deposition ma lalo o nā kūlana i hoʻopaʻa ʻia e hōʻoia i ka maikaʻi kristal kiʻekiʻe a me ke kiʻi like ʻole.

6inihi GaN-On-Sapphire noi: 6-inihi sapphire substrate chips i hoʻohana nui ʻia i ka microwave communications, radar system, wireless technology and optoelectronics.

Aia kekahi mau noi maʻamau

1. Rf mana hoonui

2. ʻOihana kukui LED

3. Nā lako kamaʻilio pūnaewele ʻole

4. ʻO nā mea uila ma ke ʻano wela kiʻekiʻe

5. Nā mea hana optoelectronic

Nā kikoʻī huahana

- Nui: ʻO ke anawaena substrate he 6 iniha (ma kahi o 150 mm).

- Ka maikaʻi o ka ʻili: Ua hoʻomaʻamaʻa maikaʻi ʻia ka ʻili e hāʻawi i ke ʻano aniani maikaʻi loa.

- Mānoanoa: Hiki ke hoʻololi ʻia ka mānoanoa o ka papa GaN e like me nā koi kikoʻī.

- Packaging: Hoʻopili maikaʻi ʻia ka substrate me nā mea anti-static e pale ai i ka pōʻino i ka wā o ka lawe ʻana.

- Nā ʻaoʻao hoʻonohonoho: Loaʻa i ka substrate nā kihi hoʻonohonoho kikoʻī e hoʻomaʻamaʻa i ka alignment a me ka hana ʻana i ka wā o ka hoʻomākaukau ʻana.

- Nā ʻāpana ʻē aʻe: Hiki ke hoʻoponopono ʻia nā ʻāpana kikoʻī e like me ka thinness, resistivity a me ka doping concentration e like me nā koi o ka mea kūʻai aku.

Me kā lākou mau waiwai waiwai a me nā noi like ʻole, ʻo 6-inch sapphire substrate wafers kahi koho hilinaʻi no ka hoʻomohala ʻana i nā mea hana semiconductor kiʻekiʻe i nā ʻoihana like ʻole.

Pāpaʻa	6” 1mm <111> p-ʻano Si	6” 1mm <111> p-ʻano Si
Epi mānoanoaAvg	~5um	~7um
Epi ThickUnif	<2%	<2%
Kakaka	+/-45um	+/-45um
Māhā	<5mm	<5mm
BV kū pololei	>1000V	>1400V
HEMT Al%	25-35%	25-35%
HEMT MānoanoaAvg	20-30nm	20-30nm
Insitu SiN Cap	5-60nm	5-60nm
2DEG conc.	~10¹³cm^-2	~10¹³cm^-2
Ka neʻe ʻana	~2000cm²/Vs (<2%)	~2000cm²/Vs (<2%)
ʻO Rsh	<330ohm/sq (<2%)	<330ohm/sq (<2%)