ʻO ka wafer substrate HPSI SiC 6'īniha Silicon Carbide Semi-insulting SiC wafers
ʻenehana ulu ʻana o PVT Silicon Carbide Crystal SiC
ʻO nā ʻano ulu o kēia manawa no ka kristal hoʻokahi SiC e komo pū ana me kēia mau mea ʻekolu: ke ʻano pae wai, ke ʻano waiho mahu kemika wela kiʻekiʻe, a me ke ʻano halihali pae mahu kino (PVT). I waena o lākou, ʻo ke ʻano PVT ka ʻenehana i noiʻi nui ʻia a oʻo no ka ulu ʻana o ka kristal hoʻokahi SiC, a ʻo kona mau pilikia loea:
(1) ʻO ke kristal hoʻokahi SiC i ka mahana kiʻekiʻe o 2300 ° C ma luna o ke keʻena graphite pani e hoʻopau i ke kaʻina hana recrystallisation hoʻololi "paʻa - kinoea - paʻa", ua lōʻihi ke kaʻina hana ulu, paʻakikī ke kaohi, a he maʻalahi i nā microtubules, nā inclusions a me nā hemahema ʻē aʻe.
(2) ʻOi aku ma mua o 200 mau ʻano kristal like ʻole ka silicon carbide kristal hoʻokahi, akā hoʻokahi wale nō ʻano kristal i hana ʻia ma ke ʻano laulā, maʻalahi ka hoʻololi ʻana o ke ʻano kristal i ke kaʻina hana ulu e hopena i nā hemahema inclusions multi-type, paʻakikī ke kaʻina hana hoʻomākaukau o hoʻokahi ʻano kristal kikoʻī e kāohi i ke kūpaʻa o ke kaʻina hana, no ka laʻana, ʻo ke ʻano nui o kēia manawa o ka 4H-type.
(3) Aia kahi gradient mahana i loko o ke kahua ulu kristal hoʻokahi o ka silicon carbide, a ʻo ia hoʻi ke kaumaha kūloko maoli i loko o ke kaʻina hana ulu kristal a me nā dislocations, nā hewa a me nā kīnā ʻē aʻe i hoʻokumu ʻia.
(4) Pono ke kaʻina hana ulu kristal hoʻokahi o ka silicon carbide e kāohi pono i ka hoʻokomo ʻana o nā haumia o waho, i mea e loaʻa ai kahi kristal semi-insulating maʻemaʻe loa a i ʻole kahi kristal conductive doped directionally. No nā substrates silicon carbide semi-insulating i hoʻohana ʻia i nā mea RF, pono e hoʻokō ʻia nā waiwai uila ma o ka kaohi ʻana i ka noʻonoʻo haumia haʻahaʻa loa a me nā ʻano kiko kikoʻī i loko o ke kristal.
Kiʻikuhi kikoʻī
