6 iniha HPSI SiC substrate wafer Silicon Carbide Semi-insuling SiC wafers

ʻO nā ʻano ulu ulu o kēia manawa no ka SiC hoʻokahi kristal ka mea nui e pili ana i kēia mau mea ʻekolu: ke ʻano hana wai, ke ʻano hoʻoheheʻe kemika kiʻekiʻe kiʻekiʻe, a me ke ʻano o ka lawe ʻana i ka vapor phase (PVT). I waena o lākou, ʻo ke ʻano PVT ka ʻenehana noiʻi a ʻoi loa no ka ulu ʻana o ka kristal SiC hoʻokahi, a ʻo kāna mau pilikia ʻenehana:

(1) SiC hoʻokahi aniani i loko o ke kiʻekiʻe wela o 2300 ° C ma luna o ka pani graphite keʻena e hoʻopau i ka "paʻa - kinoea - paa" hoʻololi recrystallization kaʻina hana, ka ulu pōʻaiapuni lōʻihi, paakiki e hoomalu, a prone i microtubules, inclusions a me nā hemahema ʻē aʻe.

(2) Silicon carbide hoʻokahi aniani, me ka ʻoi aku o 200 mau ʻano aniani like ʻole, akā ʻo ka hana ʻana o ka laulā hoʻokahi wale nō ʻano kristal, maʻalahi e hana i ka hoʻololi ʻano ʻano aniani i loko o ke kaʻina ulu e hopena ai i nā hemahema inclusions he nui, ke kaʻina hana o ka hoʻokahi. paʻakikī ka paʻa o ke kaʻina hana, no ka laʻana, ke ʻano nui o kēia manawa o ka 4H-type.

(3) Silicon carbide single crystal growth thermal field aia ka wela gradient, ka hopena i ke kaʻina ulu kristal aia ke koʻikoʻi kūloko maoli a me ka hopena o nā dislocations, nā hewa a me nā hemahema ʻē aʻe.

(4) Silicon carbide single crystal ulu kaʻina hana pono e hoomalu pono i ka hoʻokomo 'ana o waho haumia, i mea e loaʻa i ka maemae loa semi-insulating kristal a directionally doped conductive kristal. No ka semi-insulating silicon carbide substrates i hoʻohana ʻia i nā polokalamu RF, pono e hoʻokō ʻia nā waiwai uila ma ka kāohi ʻana i ka haʻahaʻa haʻahaʻa haʻahaʻa haʻahaʻa a me nā ʻano kikoʻī kikoʻī i loko o ka aniani.