8 ʻīniha SiC silicon carbide wafer 4H-N ʻano 0.5mm papa hana noiʻi papa hana i hoʻopili ʻia

8 ʻīniha SiC silicon carbide wafer 4H-N ʻano 0.5mm papa hana noiʻi papa hana poli maʻamau Kiʻi i hōʻike ʻia

Wehewehe Pōkole:

ʻO Silicon carbide (SiC), i ʻike ʻia hoʻi ʻo silicon carbide, he semiconductor e loaʻa ana ka silicon a me ke kalapona me ke ʻano kemika SiC. Hoʻohana ʻia ʻo SiC i nā mea uila semiconductor e hana ana i nā mahana kiʻekiʻe a i ʻole nā paʻi kiʻekiʻe, a i ʻole nā mea ʻelua. ʻO SiC kekahi o nā ʻāpana LED koʻikoʻi, he substrate maʻamau ia no ka ulu ʻana i nā mea GaN, a hiki ke hoʻohana ʻia ma ke ʻano he mea hoʻoheheʻe wela no nā LED mana kiʻekiʻe.
ʻO ka substrate silicon carbide 8-'īniha kahi ʻāpana koʻikoʻi o ke kolu o ka hanauna o nā mea semiconductor, nona nā ʻano o ka ikaika kahua breakdown kiʻekiʻe, ka conductivity thermal kiʻekiʻe, ka wikiwiki drift saturation electron kiʻekiʻe, a pēlā aku, a kūpono hoʻi no ka hana ʻana i nā mea uila wela kiʻekiʻe, voltage kiʻekiʻe, a me nā mea uila mana kiʻekiʻe. ʻO kāna mau kahua noi nui e pili ana i nā kaʻa uila, ka transit kaʻaahi, ka hoʻoili mana voltage kiʻekiʻe a me ka hoʻololi ʻana, photovoltaics, nā kamaʻilio 5G, ka mālama ikehu, aerospace, a me nā kikowaena ʻikepili mana helu AI.

E leka uila mai iā mākou

Nā hiʻohiʻona

ʻO nā hiʻohiʻona nui o ka substrate silicon carbide 8-'īniha 4H-N ʻano:

1. Ka nui o ka microtubule: ≤ 0.1/cm² a i ʻole ka haʻahaʻa, e like me ka nui o ka microtubule ua hoʻemi nui ʻia i lalo o 0.05/cm² i kekahi mau huahana.
2. Laki o ke ʻano kristal: Hiki i ka lakio o ke ʻano kristal 4H-SiC i 100%.
3. Ke kū'ē ʻana: 0.014~0.028 Ω·cm, a ʻoi aku ka paʻa ma waena o 0.015-0.025 Ω·cm.
4. ʻO ka ʻilikai: CMP Si Face Ra≤0.12nm.
5. Mānoanoa: ʻO ka maʻamau he 500.0±25μm a i ʻole 350.0±25μm.
6. Kihi chamfering: 25±5° a i ʻole 30±5° no A1/A2 ma muli o ka mānoanoa.
7. Ka nui o ka dislocation: ≤3000/cm².
8. Ka haumia o ka metala ʻili: ≤1E+11 mau ʻātoma/cm².
9. Kulou a me ke kaua ʻana: ≤ 20μm a me ≤2μm, kēlā me kēia.
ʻO kēia mau ʻano e hana ai i nā substrates silicon carbide 8-'īniha he waiwai nui ka hoʻohana ʻana i ka hana ʻana i nā mea uila kiʻekiʻe-wela, alapine kiʻekiʻe, a me ka mana kiʻekiʻe.

He nui nā noi o ka wafer carbide silicon 8 iniha.

1. Nā mea hana mana: Hoʻohana nui ʻia nā wafers SiC i ka hana ʻana i nā mea uila mana e like me nā MOSFET mana (metal-oxide-semiconductor field-effect transistors), Schottky diodes, a me nā modula hoʻohui mana. Ma muli o ke conductivity thermal kiʻekiʻe, ke voltage breakdown kiʻekiʻe, a me ka neʻe ʻana o ka electron kiʻekiʻe o SiC, hiki i kēia mau mea hana ke hoʻokō i ka hoʻololi mana hana kiʻekiʻe a maikaʻi hoʻi i nā wahi mahana kiʻekiʻe, voltage kiʻekiʻe, a me ke alapine kiʻekiʻe.

2. Nā mea hana optoelectronic: He kuleana koʻikoʻi ko nā wafers SiC i nā mea hana optoelectronic, i hoʻohana ʻia e hana i nā photodetectors, nā diodes laser, nā kumu ultraviolet, a me nā mea ʻē aʻe. ʻO nā waiwai optical a me nā uila kiʻekiʻe o Silicon carbide e hoʻolilo iā ia i mea koho, ʻoi aku hoʻi i nā noi e pono ai nā mahana kiʻekiʻe, nā alapine kiʻekiʻe, a me nā pae mana kiʻekiʻe.

3. Nā Mea Hana Alapine Lekiō (RF): Hoʻohana ʻia nā ʻāpana SiC e hana i nā mea hana RF e like me nā mea hoʻonui mana RF, nā kuapo alapine kiʻekiʻe, nā mea ʻike RF, a me nā mea hou aku. ʻO ke kūpaʻa wela kiʻekiʻe o SiC, nā ʻano alapine kiʻekiʻe, a me nā pohō haʻahaʻa e kūpono ia no nā noi RF e like me ke kamaʻilio uea ʻole a me nā ʻōnaehana radar.

4. Nā mea uila wela kiʻekiʻe: Ma muli o ko lākou kūpaʻa wela kiʻekiʻe a me ka elasticity wela, hoʻohana ʻia nā wafers SiC e hana i nā huahana uila i hoʻolālā ʻia e hana i nā wahi wela kiʻekiʻe, me nā mea uila mana wela kiʻekiʻe, nā mea ʻike, a me nā mea hoʻokele.

ʻO nā ala noi nui o ka substrate silicon carbide 8-'īniha 4H-N ʻano e komo pū ana me ka hana ʻana i nā mea uila wela kiʻekiʻe, alapine kiʻekiʻe, a me ka mana kiʻekiʻe, ʻoi aku hoʻi ma nā kahua o nā mea uila kaʻa, ka ikehu lā, ka hana mana makani, nā locomotive uila, nā kikowaena, nā mīkini home, a me nā kaʻa uila. Eia kekahi, ua hōʻike nā mea e like me SiC MOSFET a me Schottky diodes i ka hana maikaʻi loa i nā alapine hoʻololi, nā hoʻokolohua kaapuni pōkole, a me nā noi inverter, e hoʻokele ana i kā lākou hoʻohana ʻana i nā mea uila mana.

Hiki ke hoʻopilikino ʻia ʻo XKH me nā mānoanoa like ʻole e like me nā koi o ka mea kūʻai. Loaʻa nā ʻano ʻili like ʻole a me nā hana polishing. Kākoʻo ʻia nā ʻano doping like ʻole (e like me ka nitrogen doping). Hiki iā XKH ke hāʻawi i ke kākoʻo loea a me nā lawelawe kūkākūkā e hōʻoia i hiki i nā mea kūʻai ke hoʻoponopono i nā pilikia i ke kaʻina hana o ka hoʻohana ʻana. Loaʻa i ka substrate silicon carbide 8-ʻīniha nā pono koʻikoʻi ma ke ʻano o ka hōʻemi ʻana i ke kumukūʻai a me ka hoʻonui ʻana i ka hiki, hiki ke hōʻemi i ke kumukūʻai o ka ʻāpana chip ma kahi o 50% i hoʻohālikelike ʻia me ka substrate 6-ʻīniha. Eia kekahi, ʻo ka mānoanoa i hoʻonui ʻia o ka substrate 8-ʻīniha e kōkua i ka hōʻemi ʻana i nā ʻokoʻa geometrical a me ka warping lihi i ka wā o ka mīkini, no laila e hoʻomaikaʻi ana i ka hua.