8 'īniha SiC silikon carbide wafer 4H-N ʻano 0.5mm papa hana noiʻi papa maʻamau i poni ʻia.

8 'īniha SiC silikon carbide wafer 4H-N ʻano 0.5mm papa hana noiʻi papa maʻamau i hoʻoliʻiliʻi ʻia ke kiʻi.

ʻO ka wehewehe pōkole:

ʻO Silicon carbide (SiC), i ʻike ʻia ʻo ka silicon carbide, he semiconductor i loaʻa ke silikona a me ke kalapona me ke ʻano kemika SiC. Hoʻohana ʻia ʻo SiC i nā mea uila semiconductor e hana ana i nā wela kiʻekiʻe a i ʻole nā koi kiʻekiʻe, a i ʻole nā mea ʻelua. ʻO SiC kekahi o nā ʻāpana LED koʻikoʻi, he substrate maʻamau no ka ulu ʻana i nā polokalamu GaN, a hiki ke hoʻohana ʻia e like me ka wela wela no nā LED mana kiʻekiʻe.
ʻO 8-inch silicon carbide substrate he ʻāpana koʻikoʻi o ke kolu o ka hanauna o nā mea semiconductor, nona nā hiʻohiʻona o ke kiʻekiʻe breakdown ikaika kahua, kiʻekiʻe thermal conductivity, kiʻekiʻe electron saturation drift rate, etc., a ua kūpono no ka hana kiʻekiʻe-mahana. nā mea uila uila kiʻekiʻe, a me ka mana kiʻekiʻe. ʻO kāna mau kahua noi nui e pili ana i nā kaʻa uila, ke kaʻaahi kaʻaahi, ka hoʻoili ʻana i ka mana kiʻekiʻe a me ka hoʻololi ʻana, nā photovoltaics, nā kamaʻilio 5G, ka mālama ʻana i ka ikehu, aerospace, a me AI core computing power data centers.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

ʻO nā hiʻohiʻona nui o ka 8-inch silicon carbide substrate 4H-N type me:

1. Microtubule density: ≤ 0.1/cm² a i ʻole, e like me ka microtubule density ua hoʻemi nui ʻia i lalo o 0.05/cm² i kekahi mau huahana.
2. ʻO ka lākiō ʻano aniani: 4H-SiC ʻano aniani ka lākiō a hiki i 100%.
3. Resistivity: 0.014 ~ 0.028 Ω·cm, a ʻoi aku ka paʻa ma waena o 0.015-0.025 Ω·cm.
4. Ka 'ilikai o ka ili: CMP Si Maka Ra≤0.12nm.
5. Mānoanoa: maʻamau 500.0 ± 25μm a i ʻole 350.0 ± 25μm.
6. Chamfering angle: 25±5° a i ʻole 30±5° no A1/A2 ma muli o ka mānoanoa.
7. Ka huina dislocation density: ≤3000/cm².
8. Ka hoʻohaumia ʻana o ka metala o ka ʻili: ≤1E+11 mau ʻātoma/cm².
9. Kulou a me ka warpage: ≤ 20μm a me ≤2μm, kēlā me kēia.
ʻO kēia mau hiʻohiʻona e hana i nā substrates silicon carbide 8-inch i waiwai noi nui i ka hana ʻana i nā mea uila uila kiʻekiʻe, kiʻekiʻe-frequency, a me ka mana kiʻekiʻe.

ʻO 8inch silicon carbide wafer he nui nā noi.

1. Mea mana: Hoʻohana nui ʻia nā wafers SiC i ka hana ʻana i nā mea uila uila e like me ka mana MOSFETs (metal-oxide-semiconductor field-effect transistors), Schottky diodes, a me nā modula hoʻohui mana. Ma muli o ke kiʻekiʻe o ka thermal conductivity, kiʻekiʻe breakdown voltage, a me ka mobility electron kiʻekiʻe o SiC, hiki i kēia mau mea hana ke hoʻokō pono i ka hoʻololi ʻana i ka mana kiʻekiʻe, kiʻekiʻe kiʻekiʻe i ka wela kiʻekiʻe, kiʻekiʻe-voltage, a me nā kaiapuni kiʻekiʻe.

2. Optoelectronic mea hana: SiC wafers pāʻani koʻikoʻi i loko o optoelectronic mea, hoʻohana 'ia no ka hana photodetectors, laser diodes, ultraviolet kumu, a pela aku. nā alapine kiʻekiʻe, a me nā pae mana kiʻekiʻe.

3. Nā Pūnaehana Radio Frequency (RF): Hoʻohana pū ʻia nā ʻāpana SiC no ka hana ʻana i nā mea RF e like me nā mea hoʻonui mana RF, nā hoʻololi kiʻekiʻe, nā ʻike RF, a me nā mea hou aku. ʻO ka paʻa wela kiʻekiʻe o SiC, nā hiʻohiʻona kiʻekiʻe, a me nā poho haʻahaʻa e kūpono ia no nā noi RF e like me ke kelepona uila a me nā ʻōnaehana radar.

4.High-temperature electronics: Ma muli o ko lākou kūpaʻa wela kiʻekiʻe a me ka elasticity o ka mahana, hoʻohanaʻia nā wafers SiC e hana i nā mea uila i hoʻolālāʻia no ka hanaʻana i nā wahi wela kiʻekiʻe, e like me nā mea uila mana kiʻekiʻe, nā meaʻike, a me nā mea hoʻoponopono.

ʻO nā ala noi nui o ka 8-inch silicon carbide substrate 4H-N type me ka hana ʻana i nā mea uila kiʻekiʻe, kiʻekiʻe-frequency, a me nā mana uila kiʻekiʻe, ʻoi aku hoʻi ma nā kahua o ka uila uila, ka ikehu lā, ka mana makani, ka uila. nā locomotives, nā kikowaena, nā mea hana hale, a me nā kaʻa uila. Eia kekahi, ua hōʻike nā mea hana e like me SiC MOSFET a me Schottky diodes i ka hana maikaʻi loa i ka hoʻololi ʻana i nā alapine, nā hoʻokolohua pōkole pōkole, a me nā noi inverter, e hoʻohana ana i kā lākou hoʻohana ʻana i ka uila uila.

Hiki ke hoʻopilikinoʻia ka XKH me nā mānoanoa likeʻole e like me nā koi o ka mea kūʻai. Loaʻa nā lāʻau lapaʻau like ʻole a me ka polishing. Kākoʻo ʻia nā ʻano doping like ʻole (e like me ka nitrogen doping). Hiki i ka XKH ke hāʻawi i ke kākoʻo ʻenehana a me nā lawelawe kūkākūkā e hōʻoia i hiki i nā mea kūʻai ke hoʻoponopono i nā pilikia i ke kaʻina hana. ʻO ka 8-inch silicon carbide substrate he mau pōmaikaʻi koʻikoʻi ma ke ʻano o ka hōʻemi ʻana i ke kumukūʻai a me ka hoʻonui ʻana i ka hiki, hiki ke hoʻemi i ke kumukūʻai chip unit ma kahi o 50% i hoʻohālikelike ʻia me ka substrate 6-inch. Eia kekahi, ʻo ka hoʻonui ʻana o ka mānoanoa o ka substrate 8-inihi e kōkua i ka hōʻemi ʻana i ka hoʻokaʻawale ʻana o ka geometrical a me ka warping lihi i ka wā o ka mīkini, a laila e hoʻomaikaʻi ai i ka hua.