ʻO ka aniani silicon i uhi ʻia me ka ʻili monocrystalline silicon i uhi ʻia me ka ʻili AR anti-reflection

ʻO ka aniani silicon i uhi ʻia me ka monocrystalline silicon i uhi ʻia me ke kiʻiʻoniʻoni AR anti-reflection i hōʻike ʻia Kiʻi

Wehewehe Pōkole:

ʻO ka aniani silicon monocrystalline i uhi ʻia he mea optical hana i hoʻokumu ʻia ma ka silicon monocrystalline maʻemaʻe kiʻekiʻe (Si) e ka hana ʻana i nā optical precision a me ka ʻenehana uhi. Loaʻa i ka silicon monocrystalline ka hoʻoili kukui maikaʻi loa i loko o ka pūʻulu infrared (1.2-7μm), a i hui pū ʻia me nā uhi e like me ke kiʻi anti-reflection (AR), ke kiʻiʻoniʻoni reflection kiʻekiʻe (HR) a i ʻole ke kiʻiʻoniʻoni kānana, hiki iā ia ke hoʻomaikaʻi nui i ka hana transmittance a i ʻole reflection o nā pūʻulu kikoʻī. Hoʻohana nui ʻia nā huahana i ke kiʻi infrared, nā optics laser a me ka ʻike semiconductor.

E leka uila mai iā mākou

Nā hiʻohiʻona

Nā ʻano o ka aniani silicon i uhi ʻia:

1. Hana Optical:
Ka laulā hoʻoili: 1.2-7μm (kokoke i ka infrared a i ka mid-infrared), ka hoʻoili >90% ma ka pūʻulu puka makani 3-5μm (ma hope o ka uhi ʻana).
Ma muli o ke kiʻekiʻe o ka refractive index (n≈ 3.4@4μm), pono e hoʻopili ʻia kahi kiʻiʻoniʻoni anti-reflection (e like me MgF₂/Y₂O₃) e hōʻemi i ka nalowale o ka ʻike ʻana o ka ʻili.

2. Paʻa wela:
ʻO ke koina hoʻonui wela haʻahaʻa (2.6 × 10⁻⁶/K), ke kūpaʻa wela kiʻekiʻe (mahana hana a hiki i 500 ℃), kūpono no nā noi laser mana kiʻekiʻe.

3. Nā waiwai mīkini:
ʻO ka paʻakikī Mohs 7, ke kūpaʻa i ke kahakaha ʻana, akā kiʻekiʻe ka brittleness, pono ka palekana chamfering lihi.

4. Nā ʻano uhi:
Customized anti-reflection film (AR@3-5μm), high reflection film (HR@10.6μm for CO₂ laser), bandpass filter film, etc.

Nā noi aniani silicon i uhi ʻia:

(1) ʻŌnaehana kiʻi wela infrared
Ma ke ʻano he ʻāpana koʻikoʻi o nā aniani infrared (3-5μm a i ʻole 8-12μm band) no ka nānā ʻana i ka palekana, ka nānā ʻana i nā ʻoihana a me nā lako ʻike pō koa.

(2) ʻŌnaehana ʻike laser
Laser CO₂ (10.6μm): Lensa reflector kiʻekiʻe no nā resonators laser a i ʻole ka hoʻokele kukuna.

ʻO ka laser fiber (1.5-2μm): Hoʻomaikaʻi ka aniani kiʻiʻoniʻoni anti-reflection i ka pono o ka hoʻopili ʻana.

(3) Nā lako hoʻāʻo Semiconductor
ʻO ka pahuhopu microscopic infrared no ka ʻike ʻana i nā kīnā wafer, kūpaʻa i ka pala plasma (pono ka pale uhi kūikawā).

(4) nā mea hana loiloi spectral
Ma ke ʻano he ʻāpana spectral o ka spectrometer infrared Fourier (FTIR), pono ka transmittance kiʻekiʻe a me ka distortion wavefront haʻahaʻa.

Nā palena loea:

Ua lilo ka lens silicon monocrystalline i uhi ʻia i mea nui i ka ʻōnaehana optical infrared ma muli o kona hoʻoili kukui infrared maikaʻi loa, ke kūpaʻa wela kiʻekiʻe a me nā ʻano uhi i hiki ke hoʻopilikino ʻia. Hōʻoia kā mākou lawelawe kūikawā i ka hana maikaʻi loa o nā lens i nā noi laser, nānā a me ke kiʻi.

Kūlana Maʻamau	Kumukūʻai Kiʻekiʻe
Mea Hana	Silika
Ka nui	5mm-300mm	5mm-300mm
Ka Hoʻomanawanui Nui	±0.1mm	±0.02mm
Māmā ka puka	≥90%	95%
Ka maikaʻi o ka ʻili	60/40	20/10
Ke kikowaena	3'	1'
Ka hoʻomanawanui ʻana i ka lōʻihi o ke kikowaena	±2%	±0.5%
Uhi ʻana	ʻAʻohe i uhi ʻia, AR, BBAR, Noʻonoʻo

Hana maʻamau XKH

Hāʻawi ʻo XKH i ke kaʻina hana hoʻopilikino piha o nā aniani silicon monocrystalline i uhi ʻia: Mai ke koho ʻana i ka substrate silicon monocrystalline (resistivity >1000Ω·cm), ka hana optical precision (spherical/aspherical, surface accuracy λ/4@633nm), ka uhi ʻana maʻamau (anti-reflection/high reflection/filter film, kākoʻo i ka hoʻolālā multi-band), a hiki i ka hoʻāʻo koʻikoʻi (ka helu hoʻoili, ka paepae hōʻino laser, ka hoʻāʻo hilinaʻi kaiapuni), kākoʻo i ka pūʻulu liʻiliʻi (10 ʻāpana) a hiki i ka hana nui. Hāʻawi pū ia i nā palapala loea (nā piʻo uhi, nā palena optical) a me ke kākoʻo ma hope o ke kūʻai aku e hoʻokō i nā koi koi o nā ʻōnaehana optical infrared.