Kūʻai N Type SiC Seed Substrate Dia153/155mm No nā Electronics Power

Hoʻohana ʻia nā kumulāʻau Silicon Carbide (SiC) ma ke ʻano he kumu kumu no nā semiconductor o nā hanauna ʻekolu, i ʻike ʻia e ko lākou conductivity thermal kiʻekiʻe, ʻoi aku ka ikaika o ke kahua uila, a me ka mobility electron kiʻekiʻe. Hoʻolilo kēia mau waiwai iā lākou i mea nui no ka uila uila, nā polokalamu RF, nā kaʻa uila (EVs), a me nā noi ikehu hou. Hoʻolaha ʻo XKH i ka R&D a me ka hana ʻana i nā substrate hua SiC kiʻekiʻe, e hoʻohana ana i nā ʻenehana ulu kristal holomua e like me Physical Vapor Transport (PVT) a me High-Temperature Chemical Vapor Deposition (HTCVD) e hōʻoia i ka maikaʻi crystalline alakaʻi i ka ʻoihana.

Hāʻawi ʻo XKH i nā substrate hua SiC 4-ʻīniha, 6-ʻīniha, a me 8-ʻīniha me ka doping N-type/P-type maʻamau, e loaʻa ana i nā pae resistivity o 0.01-0.1 Ω·cm a me nā dislocation densities ma lalo o 500 cm⁻², e hoʻolilo iā lākou i mea kūpono no ka hana ʻana i nā MOSFET, Schottky Barriers. ʻO kā mākou kaʻina hana i hoʻohui pono ʻia e uhi i ka ulu ʻana o ka kristal, ka ʻoki ʻana i ka wafer, ka polishing, a me ka nānā ʻana, me ka mana hana o kēlā me kēia mahina ma mua o 5,000 wafers e hoʻokō i nā koi like ʻole o nā keʻena noiʻi, nā mea hana semiconductor, a me nā hui ikehu hou.

Eia hou, hāʻawi mākou i nā hoʻonā maʻamau, me:

ʻO ka hana maʻamau o ke aniani (4H-SiC, 6H-SiC)

Doping kūikawā (Aluminium, Nitrogen, Boron, etc.)

ʻO ka poʻi maʻemaʻe loa (Ra < 0.5 nm)

Kākoʻo ʻo XKH i ka hoʻoili ʻana i nā laʻana, nā kūkākūkā ʻenehana, a me nā prototyping liʻiliʻi e hāʻawi i nā ʻōnaehana substrate SiC i hoʻopaʻa ʻia.