ʻAno N ʻAno SiC Seed Substrate Dia153/155mm No nā Electronics Mana

ʻO nā substrates hua Silicon Carbide (SiC) ke kumu no nā semiconductors hanauna ʻekolu, i ʻike ʻia e ko lākou conductivity thermal kiʻekiʻe loa, ka ikaika o ke kahua uila breakdown kiʻekiʻe, a me ka neʻe ʻana o ka electron kiʻekiʻe. ʻO kēia mau waiwai e lilo ai lākou i mea pono no nā mea uila mana, nā mea RF, nā kaʻa uila (EV), a me nā noi ikehu hou. He loea ʻo XKH i ka R&D a me ka hana ʻana i nā substrates hua SiC kiʻekiʻe, e hoʻohana ana i nā ʻano hana ulu kristal holomua e like me Physical Vapor Transport (PVT) a me High-Temperature Chemical Vapor Deposition (HTCVD) e hōʻoia i ka maikaʻi crystalline alakaʻi ʻoihana.

Hāʻawi ʻo XKH i nā substrates hua SiC 4-'īniha, 6-'īniha, a me 8-'īniha me ka doping ʻano N/ʻano P i hiki ke hoʻopilikino ʻia, e hoʻokō ana i nā pae resistivity o 0.01-0.1 Ω·cm a me nā dislocation densities ma lalo o 500 cm⁻², e kūpono ai no ka hana ʻana i nā MOSFET, Schottky Barrier Diodes (SBDs), a me IGBTs. Uhi kā mākou kaʻina hana hana i hoʻohui ʻia me ke kū pololei i ka ulu ʻana o ka kristal, ka ʻoki ʻana i nā wafer, ka poli ʻana, a me ka nānā ʻana, me ka hiki ke hana i kēlā me kēia mahina ma mua o 5,000 mau wafer e hoʻokō ai i nā koi like ʻole o nā ʻoihana noiʻi, nā mea hana semiconductor, a me nā ʻoihana ikehu hou.

Eia kekahi, hāʻawi mākou i nā hoʻonā maʻamau, me:

Hoʻopilikino ʻana i ke kuhikuhi ʻana o ka kristal (4H-SiC, 6H-SiC)

ʻO ka doping kūikawā (Alumini, Nitrogen, Boron, a pēlā aku)

ʻO ka wili ʻana he palupalu loa (Ra < 0.5 nm)

Kākoʻo ʻo XKH i ka hana ʻana ma muli o ka laʻana, nā kūkākūkā loea, a me ke ʻano hana prototyping liʻiliʻi e hāʻawi i nā hopena substrate SiC i hoʻomaikaʻi ʻia.