Nā Wafer Epitaxial GaN-on-SiC (100mm, 150mm) – Nā Koho Substrate SiC Nui (4H-N, HPSI, 4H/6H-P)
Nā hiʻohiʻona
●Epitaxial Layer Mānoanoa: Hoʻopilikino mai1.0 µmi3.5 µm, optimized no ka mana kiʻekiʻe a me ka hana pinepine.
●SiC Substrate Koho: Loaʻa me nā substrate SiC like ʻole, me:
- 4H-N: ʻO ka Nitrogen-doped 4H-SiC kūlana kiʻekiʻe no nā noi kiʻekiʻe a me nā mana kiʻekiʻe.
- HPSI: High-Purity Semi-Insulating SiC no nā noi e koi ana i ka hoʻokaʻawale uila.
- 4H/6H-P: Hoʻohuiʻia 4H a me 6H-SiC no ke kaulike o ka pono kiʻekiʻe a me ka hilinaʻi.
● Nui Wafer: Loaʻa ma100mma150mmnā anawaena no ka versatility i ka hoʻonui ʻana a me ka hoʻohui ʻana.
●Ka Uila Wehewehe Kiʻekiʻe: Hāʻawi ʻo GaN ma ka ʻenehana SiC i ka uila haʻihaʻi kiʻekiʻe, hiki i ka hana ikaika i nā noi mana kiʻekiʻe.
●Kiʻekiʻe Thermal Conductivity: Ka hoʻoili wela o ka SiC (ma kahi o 490 W/m·K) e hōʻoia i ka hoʻopau wela maikaʻi loa no nā noi ikaika.
Nā Kūlana ʻenehana
| ʻĀpana | Waiwai |
| Anawaena Wafer | 100mm, 150mm |
| Epitaxial Layer Mānoanoa | 1.0 µm – 3.5 µm (hiki ke hoʻololi ʻia) |
| Nā ʻano substrate SiC | 4H-N, HPSI, 4H/6H-P |
| SiC Thermal Conductivity | 490 W/m·K |
| SiC Kū'ē | 4H-N: 10^6 Ω·cm,HPSI: Semi-Insulating,4H/6H-P: Huihui 4H/6H |
| ʻO ka Mānoanoa Layer GaN | 1.0 µm – 2.0 µm |
| ʻO ka mea lawe lawe GaN | 10^18 knm^-3 a hiki i 10^19 knm^-3 (hiki ke hoohanaia) |
| Maikaʻi Ili Wafer | ʻO ka ʻākeke RMS: < 1 nm |
| ʻO ka ʻili o ka wehe ʻana | < 1 x 10^6 knm^-2 |
| Kakaka Wafer | <50 µm |
| Wafer Flatness | < 5 µm |
| ʻO ka wela hana kiʻekiʻe loa | 400°C (maʻamau no nā polokalamu GaN-on-SiC) |
Nā noi
●Power Electronics:Hāʻawi nā wafers GaN-on-SiC i ka maikaʻi kiʻekiʻe a me ka hoʻopau wela, e hoʻolilo iā lākou i mea kūpono no ka hoʻonui ʻana i ka mana, nā mea hoʻololi mana, a me nā kaapuni mana-inverter i hoʻohana ʻia i nā kaʻa uila, nā ʻōnaehana ikehu hou, a me nā mīkini ʻenehana.
● RF Power Amplifiers:ʻO ka hui pū ʻana o GaN a me SiC he kūpono no nā noi RF kiʻekiʻe, mana kiʻekiʻe e like me ke kelepona, ke kamaʻilio satellite, a me nā ʻōnaehana radar.
●Aerospace a me ka pale kaua:He kūpono kēia mau wafers no nā ʻenehana aerospace a me nā ʻenehana pale e koi ana i ka uila mana kiʻekiʻe a me nā ʻōnaehana kamaʻilio e hiki ke hana ma lalo o nā kūlana paʻakikī.
● Nā polokalamu kaʻa:He kūpono no nā ʻōnaehana mana hana kiʻekiʻe i nā kaʻa uila (EV), nā kaʻa hybrid (HEVs), a me nā kikowaena hoʻouka, hiki i ka hoʻololi ʻana i ka mana kūpono a me ka mana.
● Pūnaehana Koa a me Radar:Hoʻohana ʻia nā wafers GaN-on-SiC i nā ʻōnaehana radar no ko lākou kiʻekiʻe kiʻekiʻe, hiki ke mālama i ka mana, a me ka hana wela i nā wahi koi.
●Nalu uila a me nā hawewe-milimika:No nā ʻōnaehana kamaʻilio o ka hanauna e hiki mai ana, me 5G, hāʻawi ʻo GaN-on-SiC i ka hana maikaʻi loa i ka microwave mana kiʻekiʻe a me nā pae hawewe millimeter.
N&A
Q1: He aha nā pōmaikaʻi o ka hoʻohana ʻana iā SiC ma ke ʻano he substrate no GaN?
A1:Hāʻawi ʻo Silicon Carbide (SiC) i ka conductivity thermal kiʻekiʻe, ka volta breakdown kiʻekiʻe, a me ka ikaika mechanical i hoʻohālikelike ʻia i nā substrate kuʻuna e like me ke silika. Hana kēia i nā wafers GaN-on-SiC i kūpono no nā noi kiʻekiʻe, kiʻekiʻe-frequency, a me ka wela wela. Kōkua ka SiC substrate e hoʻopau i ka wela i hana ʻia e nā polokalamu GaN, e hoʻomaikaʻi i ka hilinaʻi a me ka hana.
Q2: Hiki ke hoʻopilikino ʻia ka mānoanoa papa epitaxial no nā noi kikoʻī?
A2:ʻAe, hiki ke hoʻopilikino ʻia ka mānoanoa papa epitaxial i loko o ka laulā o1.0 µm a i 3.5 µm, e pili ana i ka mana a me nā koi pinepine o kāu noi. Hiki iā mākou ke hoʻololi i ka mānoanoa o ka papa GaN e hoʻomaikaʻi i ka hana no nā polokalamu kikoʻī e like me nā mana amplifiers, ʻōnaehana RF, a i ʻole nā kaapuni kiʻekiʻe.
Q3: He aha ka ʻokoʻa ma waena o 4H-N, HPSI, a me 4H/6H-P SiC substrates?
A3:
- 4H-N: Hoʻohana pinepine ʻia ʻo Nitrogen-doped 4H-SiC no nā noi alapine kiʻekiʻe e koi ana i ka hana uila kiʻekiʻe.
- HPSI: Hāʻawi ka High-Purity Semi-Insulating SiC i ka hoʻokaʻawale uila, kūpono no nā noi e koi ana i ka conductivity uila liʻiliʻi.
- 4H/6H-P: ʻO kahi hui o 4H a me 6H-SiC e kaulike ana i ka hana, e hāʻawi ana i ka hui pū ʻana o ka pono kiʻekiʻe a me ka paʻa, kūpono no nā noi uila uila like ʻole.
Q4: Ua kūpono kēia mau wafers GaN-on-SiC no nā noi mana kiʻekiʻe e like me nā kaʻa uila a me ka ikehu hou?
A4:ʻAe, kūpono nā wafers GaN-on-SiC no nā noi mana kiʻekiʻe e like me nā kaʻa uila, ka ikehu hou, a me nā ʻōnaehana ʻoihana. ʻO ka puʻupuʻu haʻahaʻa kiʻekiʻe, ka conductivity thermal kiʻekiʻe, a me nā mana hoʻokele mana o nā mea GaN-on-SiC e hiki ai iā lākou ke hana maikaʻi i ke koi ʻana i ka hoʻololi ʻana i ka mana a me nā kaʻa kaʻa.
Q5: He aha ke ʻano dislocation maʻamau no kēia mau wafers?
A5:ʻO ka dislocation density o kēia mau wafers GaN-on-SiC maʻamau< 1 x 10^6 knm^-2, e hōʻoiaʻiʻo ana i ka ulu epitaxial kiʻekiʻe, e hōʻemi i nā hemahema a me ka hoʻomaikaʻi ʻana i ka hana a me ka hilinaʻi.
Q6: Hiki iaʻu ke noi i kahi nui wafer kikoʻī a i ʻole ʻano substrate SiC?
A6:ʻAe, hāʻawi mākou i nā nui wafer maʻamau (100mm a me 150mm) a me nā ʻano substrate SiC (4H-N, HPSI, 4H/6H-P) e hoʻokō i nā pono kikoʻī o kāu noi. E ʻoluʻolu e kelepona mai iā mākou no nā koho hoʻoponopono hou aʻe a kūkākūkā i kāu mau koi.
Q7: Pehea e hana ai nā wafers GaN-on-SiC i nā kaiapuni koʻikoʻi?
A7:He kūpono nā wafers GaN-on-SiC no nā kaiapuni koʻikoʻi ma muli o ko lākou kūpaʻa wela kiʻekiʻe, ka hoʻokele mana kiʻekiʻe, a me ka hiki ke hoʻopau wela. Hana maikaʻi kēia mau wafers i nā kūlana kiʻekiʻe, ka mana kiʻekiʻe, a me ke alapine kiʻekiʻe i ʻike pinepine ʻia i ka aerospace, pale, a me nā noi ʻoihana.
Ka hopena
Hoʻohui kā mākou GaN-on-SiC Epitaxial Wafers i nā waiwai kiʻekiʻe o GaN a me SiC e hāʻawi i ka hana kiʻekiʻe i nā noi kiʻekiʻe a me nā kiʻekiʻe. Me nā koho substrate SiC he nui a me nā papa epitaxial maʻamau, kūpono kēia mau wafers no nā ʻoihana e koi ana i ka hana kiʻekiʻe, ka hoʻokele wela, a me ka hilinaʻi. Inā no ka uila uila, ʻōnaehana RF, a i ʻole nā noi pale, hāʻawi kā mākou GaN-on-SiC wafers i ka hana a me ka maʻalahi āu e pono ai.
Kiʻi kikoʻī
