Nā Wafers Epitaxial GaN-on-SiC i hoʻopilikino ʻia (100mm, 150mm) - Nā Koho Substrate SiC he nui (4H-N, HPSI, 4H/6H-P)
Nā hiʻohiʻona
●Mānoanoa o ka Papa EpitaxialHiki ke hoʻopilikino ʻia mai1.0 µmi3.5 µm, i hoʻonohonoho pono ʻia no ka hana mana kiʻekiʻe a me ke alapine (frequency).
●Nā Koho Substrate SiCLoaʻa me nā ʻano substrates SiC like ʻole, me:
- 4H-N4H-SiC i hoʻohui ʻia me ka Nitrogen kiʻekiʻe no nā noi alapine kiʻekiʻe, mana kiʻekiʻe.
- HPSIʻO ka SiC Semi-Insulating Maʻemaʻe Kiʻekiʻe no nā noi e pono ai ka hoʻokaʻawale uila.
- 4H/6H-P: Ua hui pū ʻia ʻo 4H a me 6H-SiC no ke kaulike o ka pono kiʻekiʻe a me ka hilinaʻi.
●Nā Nui o ka WaferLoaʻa ma100mma me150mmnā anawaena no ka maʻalahi o ka hoʻonui ʻana a me ka hoʻohui ʻana o nā hāmeʻa.
●Hoʻemi ʻia ke kahe koko kiʻekiʻeHāʻawi ka ʻenehana GaN ma SiC i ke volta breakdown kiʻekiʻe, e hiki ai ke hana ikaika i nā noi mana kiʻekiʻe.
● Ka hoʻokele wela kiʻekiʻe: Ka conductivity wela kūlohelohe o SiC (ma kahi o 490 W/m·K) e hōʻoiaʻiʻo ana i ka hoʻopuehu wela maikaʻi loa no nā noi e hoʻohana nui ana i ka mana.
Nā Kikoʻī ʻenehana
| Palena | Waiwai |
| Anawaena Wafer | 100mm, 150mm |
| Mānoanoa o ka Papa Epitaxial | 1.0 µm – 3.5 µm (hiki ke hoʻopilikino ʻia) |
| Nā ʻAno Substrate SiC | 4H-N, HPSI, 4H/6H-P |
| Ka hoʻokele wela SiC | 490 W/m·K |
| Ke kū'ē ʻana o SiC | 4H-N: 10^6 Ω·cm,HPSIHoʻokaʻawale hapa-ʻia,4H/6H-P: Hui pū ʻia 4H/6H |
| Mānoanoa o ka Papa GaN | 1.0 µm – 2.0 µm |
| Ka Hoʻohuihui ʻana o ka Mea Lawe GaN | 10^18 kenimika^-3 a i 10^19 kenimika^-3 (hiki ke hoʻopilikino ʻia) |
| Ka maikaʻi o ka ʻili wafer | Ka ʻoʻoleʻa RMS: < 1 nm |
| Ka nui o ka neʻe ʻana | < 1 x 10^6 kenimika^-2 |
| Kakaka Wafer | < 50 µm |
| Ka Palahalaha o ka Wafer | < 5 µm |
| Mahana Hana Kiʻekiʻe Loa | 400°C (maʻamau no nā polokalamu GaN-on-SiC) |
Nā noi
● Nā Uila Mana:Hāʻawi nā wafers GaN-on-SiC i ka pono kiʻekiʻe a me ka hoʻopuehu wela, e kūpono ana iā lākou no nā mea hoʻoikaika mana, nā mea hoʻololi mana, a me nā kaapuni inverter mana i hoʻohana ʻia i nā kaʻa uila, nā ʻōnaehana ikehu hou, a me nā mīkini ʻoihana.
●Nā Mea Hoʻonui Mana RF:He kūpono loa ka hui pū ʻana o GaN a me SiC no nā noi RF kiʻekiʻe-alapine (frequency) kiʻekiʻe e like me ke kelepona ʻana, nā kamaʻilio ukali, a me nā ʻōnaehana radar.
●Lewa a me ka Pale Kaua:He kūpono kēia mau wafers no nā ʻenehana aerospace a me nā ʻenehana pale e pono ai nā mea uila mana hana kiʻekiʻe a me nā ʻōnaehana kamaʻilio e hiki ke hana ma lalo o nā kūlana paʻakikī.
●Nā Hana Kaʻa:Kūpono no nā ʻōnaehana mana hana kiʻekiʻe i nā kaʻa uila (EV), nā kaʻa hybrid (HEV), a me nā kikowaena hoʻouka, e hiki ai ke hoʻololi a me ka kaohi mana kūpono.
●Nā ʻōnaehana koa a me nā radar:Hoʻohana ʻia nā wafers GaN-on-SiC i nā ʻōnaehana radar no ko lākou pono kiʻekiʻe, hiki ke lawelawe mana, a me ka hana wela i nā wahi koi.
●Nā Hana no ka Microwave a me ka Millimeter-Wave:No nā ʻōnaehana kamaʻilio o ka hanauna e hiki mai ana, me 5G, hāʻawi ʻo GaN-on-SiC i ka hana kūpono loa i nā pae microwave mana kiʻekiʻe a me nā nalu millimeter.
Nīnau a me nā Pane
Q1: He aha nā pono o ka hoʻohana ʻana iā SiC ma ke ʻano he substrate no GaN?
A1:Hāʻawi ʻo Silicon Carbide (SiC) i ka conductivity thermal kiʻekiʻe, ka voltage breakdown kiʻekiʻe, a me ka ikaika mechanical i hoʻohālikelike ʻia me nā substrates kuʻuna e like me ka silicon. ʻO kēia ka mea e kūpono ai nā wafers GaN-on-SiC no nā noi mana kiʻekiʻe, alapine kiʻekiʻe, a me nā mahana kiʻekiʻe. Kōkua ka substrate SiC i ka hoʻokuʻu ʻana i ka wela i hana ʻia e nā polokalamu GaN, e hoʻomaikaʻi ana i ka hilinaʻi a me ka hana.
Q2: Hiki ke hoʻopilikino ʻia ka mānoanoa o ka papa epitaxial no nā noi kikoʻī?
A2:ʻAe, hiki ke hoʻopilikino ʻia ka mānoanoa o ka papa epitaxial i loko o kahi laulā o1.0 µm a i 3.5 µm, ma muli o nā koi mana a me ke alapine (frequency) o kāu noi. Hiki iā mākou ke hoʻoponopono i ka mānoanoa o ka papa GaN e hoʻonui i ka hana no nā mea kikoʻī e like me nā mea hoʻonui mana, nā ʻōnaehana RF, a i ʻole nā kaapuni alapine kiʻekiʻe.
Q3: He aha ka ʻokoʻa ma waena o nā substrates 4H-N, HPSI, a me 4H/6H-P SiC?
A3:
- 4H-NHoʻohana pinepine ʻia ka 4H-SiC me ka naikokene no nā noi alapine kiʻekiʻe e pono ai ka hana uila kiʻekiʻe.
- HPSIHāʻawi ka High-Purity Semi-Insulating SiC i ka hoʻokaʻawale uila, kūpono no nā noi e koi ana i ka conductivity uila liʻiliʻi.
- 4H/6H-PHe hui pū ʻana o 4H a me 6H-SiC e kaulike ana i ka hana, e hāʻawi ana i ka hui pū ʻana o ka pono kiʻekiʻe a me ka paʻa, kūpono no nā noi uila mana like ʻole.
Q4: He kūpono anei kēia mau wafers GaN-on-SiC no nā noi mana kiʻekiʻe e like me nā kaʻa uila a me ka ikehu hou?
A4:ʻAe, kūpono loa nā wafers GaN-on-SiC no nā noi mana kiʻekiʻe e like me nā kaʻa uila, ka ikehu hou, a me nā ʻōnaehana ʻoihana. ʻO ke kiʻekiʻe o ka voltage breakdown, ke kiʻekiʻe o ka conductivity thermal, a me nā hiki ke lawelawe mana o nā mea GaN-on-SiC e hiki ai iā lākou ke hana pono i nā kaapuni hoʻololi mana koi a me nā kaapuni kaohi.
Q5: He aha ka nui o ka dislocation maʻamau no kēia mau wafers?
A5:ʻO ka nui o ka dislocation o kēia mau wafers GaN-on-SiC maʻamau< 1 x 10^6 kenimika^-2, ka mea e hōʻoiaʻiʻo ai i ka ulu ʻana o ka epitaxial kiʻekiʻe, e hoʻemi ana i nā hemahema a hoʻomaikaʻi i ka hana a me ka hilinaʻi o ka hāmeʻa.
Q6: Hiki iaʻu ke noi i kahi nui wafer kikoʻī a i ʻole ke ʻano substrate SiC?
A6:ʻAe, hāʻawi mākou i nā nui wafer i hana ʻia (100mm a me 150mm) a me nā ʻano substrate SiC (4H-N, HPSI, 4H/6H-P) e hoʻokō i nā pono kikoʻī o kāu noi. E ʻoluʻolu e kelepona mai iā mākou no nā koho hoʻopilikino hou aʻe a e kūkākūkā i kāu mau koi.
Q7: Pehea e hana ai nā wafers GaN-on-SiC i nā wahi koʻikoʻi?
A7:He kūpono nā wafers GaN-on-SiC no nā wahi koʻikoʻi ma muli o ko lākou kūpaʻa wela kiʻekiʻe, ka lawelawe ʻana i ka mana kiʻekiʻe, a me nā hiki ke hoʻopuehu wela maikaʻi loa. Hana maikaʻi kēia mau wafers i nā kūlana wela kiʻekiʻe, mana kiʻekiʻe, a me ke alapine kiʻekiʻe i ʻike pinepine ʻia i nā noi aerospace, pale kaua, a me nā ʻoihana.
Hopena
Hoʻohui kā mākou GaN-on-SiC Epitaxial Wafers i hoʻopilikino ʻia i nā waiwai holomua o GaN a me SiC e hāʻawi i ka hana maikaʻi loa i nā noi mana kiʻekiʻe a me ke alapine kiʻekiʻe. Me nā koho substrate SiC he nui a me nā papa epitaxial i hoʻopilikino ʻia, kūpono kēia mau wafers no nā ʻoihana e pono ai ka pono kiʻekiʻe, ka hoʻokele wela, a me ka hilinaʻi. Inā no nā mea uila mana, nā ʻōnaehana RF, a i ʻole nā noi pale, hāʻawi kā mākou GaN-on-SiC wafers i ka hana a me ka maʻalahi āu e pono ai.
Kiʻikuhi kikoʻī
