ʻO Gallium Nitride (GaN) Epitaxial ulu ʻia ma nā Wafers Sapphire 4 iniha 6 ʻīniha no MEMS
Na waiwai o GaN ma na Wafera Sapphire
●Kiʻekiʻe Efficiency:Hāʻawi nā mea i hoʻokumu ʻia ʻo GaN i ʻelima mau manawa ʻoi aku ka mana ma mua o nā mea hana silicon, e hoʻonui ana i ka hana ma nā noi uila like ʻole, me ka RF amplification a me optoelectronics.
●Wide Bandgap:Hāʻawi ka bandgap ākea o GaN i ka hana kiʻekiʻe i nā mahana kiʻekiʻe, e kūpono ia no nā noi kiʻekiʻe a me nā alapine kiʻekiʻe.
●Loaʻa:ʻO ka hiki o GaN ke mālama i nā kūlana koʻikoʻi (nā wela kiʻekiʻe a me ka radiation) e hōʻoia i ka hana lōʻihi ma nā wahi paʻakikī.
● liʻiliʻi:ʻAe ʻo GaN i ka hana ʻana i nā mea ʻoi aku ka paʻakikī a me ka māmā i hoʻohālikelike ʻia i nā mea semiconductor kuʻuna, e hoʻomaʻamaʻa i nā mea uila liʻiliʻi a ʻoi aku ka ikaika.
ʻĀpana
Ke puka mai nei ʻo Gallium Nitride (GaN) ma ke ʻano he semiconductor o ke koho no nā noi holomua e koi ana i ka mana kiʻekiʻe a me ka pono, e like me nā modula mua-hope RF, nā ʻōnaehana kamaʻilio kiʻekiʻe, a me nā kukui LED. ʻO nā wafers epitaxial GaN, i ka wā e ulu ai ma luna o nā substrates sapphire, hāʻawi i kahi hui o ka conductivity thermal kiʻekiʻe, ka haʻahaʻa haʻahaʻa kiʻekiʻe, a me ka pane alapine ākea, ʻo ia ke kī no ka hana maikaʻi loa i nā mea kelepona uila, nā radar, a me nā jammers. Loaʻa kēia mau wafers ma nā anawaena 4-inch a me 6-inch, me nā mānoanoa GaN like ʻole e hoʻokō i nā koi ʻenehana like ʻole. ʻO nā waiwai kūʻokoʻa o GaN e lilo ia i moho nui no ka wā e hiki mai ana o ka uila uila.
Nā Kūlana Huahana
| Hiʻona Huahana | Hōʻike |
| Anawaena Wafer | 50mm, 100mm, 50.8mm |
| Pāpaʻa | Sapphire |
| ʻO ka Mānoanoa Layer GaN | 0.5 μm - 10 μm |
| ʻAno GaN/Doping | N-type (P-type loaʻa ma ke noi) |
| ʻO GaN Crystal Orientation | <0001> |
| ʻAno hoʻopololei | Hoʻomaʻamaʻa ʻia ʻaoʻao hoʻokahi (SSP), poli ʻaoʻao ʻelua (DSP) |
| Al2O3 Manoanoa | 430 μm - 650 μm |
| TTV (Hoʻololi Mānoanoa Hui Pū ʻIa) | ≤ 10 μm |
| Kakaka | ≤ 10 μm |
| Warp | ≤ 10 μm |
| Wahi Ili | ʻAi ʻili hiki ke hoʻohana ʻia > 90% |
N&A
Q1: He aha nā pōmaikaʻi nui o ka hoʻohana ʻana iā GaN ma luna o nā semiconductor-based silicon?
A1: Hāʻawi ʻo GaN i nā pōmaikaʻi koʻikoʻi ma mua o ke silika, me kahi bandgap ākea, e hiki ai iā ia ke mālama i nā voltages breakdown kiʻekiʻe a hana maikaʻi i nā wela kiʻekiʻe. Hana kēia i ka GaN i kūpono no nā noi kiʻekiʻe, kiʻekiʻe-frequency e like me RF modules, power amplifiers, a me nā LED. ʻO ka hiki o GaN ke mālama i nā mana kiʻekiʻe e hiki ai i nā mea liʻiliʻi a ʻoi aku ka maikaʻi i ka hoʻohālikelike ʻia me nā mea ʻē aʻe i hoʻokumu ʻia i ke silika.
Q2: Hiki ke hoʻohana ʻia ʻo GaN ma Sapphire wafers i nā polokalamu MEMS (Micro-Electro-Mechanical Systems)?
A2: ʻAe, kūpono ʻo GaN on Sapphire wafers no nā polokalamu MEMS, ʻoi aku ka nui o ka mana kiʻekiʻe, ka paʻa wela, a me ka leo haʻahaʻa. ʻO ka lōʻihi a me ka maikaʻi o ka mea i nā kaiapuni kiʻekiʻe e kūpono ia no nā mea MEMS i hoʻohana ʻia i ke kamaʻilio uila, ʻike, a me nā ʻōnaehana radar.
Q3: He aha nā noi kūpono o GaN i ke kamaʻilio kelepona?
A3: Hoʻohana nui ʻia ʻo GaN i nā modula mua-hope RF no ke kamaʻilio uea, me ka ʻōnaehana 5G, nā ʻōnaehana radar, a me nā jammers. ʻO kona kiʻekiʻe mana kiʻekiʻe a me ka thermal conductivity e kūpono ia no nā mea mana kiʻekiʻe, kiʻekiʻe-frequency, e hiki ai i ka hana ʻoi aku ka maikaʻi a me nā kumu liʻiliʻi liʻiliʻi i hoʻohālikelike ʻia i nā hāʻina pili silicon.
Q4: He aha nā manawa alakaʻi a me nā helu kauoha liʻiliʻi no GaN ma nā wafers Sapphire?
A4: Hoʻololi nā manawa alakaʻi a me nā helu kauoha liʻiliʻi ma muli o ka nui o ka wafer, ka mānoanoa o GaN, a me nā koi o nā mea kūʻai aku. E ʻoluʻolu e leka uila mai iā mākou no ke kumukūʻai kikoʻī a me ka loaʻa ʻana ma muli o kāu mau kikoʻī.
Q5: Hiki iaʻu ke kiʻi i ka mānoanoa o ka papa GaN maʻamau a i ʻole ka pae doping?
A5: ʻAe, hāʻawi mākou i ka hana maʻamau o GaN mānoanoa a me nā pae doping e hoʻokō i nā pono noi kikoʻī. E ʻoluʻolu e hoʻokaʻaʻike mai i kāu mau kikoʻī i makemake ʻia, a e hāʻawi mākou i kahi hopena kūpono.
Kiʻi kikoʻī
