ʻO Gallium Nitride ma ka wafer Silicon 4 iniha 6 iniha Tailored Si Substrate Orientation, Resistivity, a me nā koho N-type/P-type
Nā hiʻohiʻona
● Pālahalaha ākea:Hāʻawi ʻo GaN (3.4 eV) i kahi hoʻomaikaʻi koʻikoʻi i ka hana alapine kiʻekiʻe, mana kiʻekiʻe, a me ka mahana kiʻekiʻe i hoʻohālikelike ʻia me ka silicon kuʻuna, e kūpono ana no nā mea mana a me nā mea hoʻonui RF.
● Hoʻonohonoho ʻia ke kuhikuhi ʻana o ka substrate Si:E koho mai nā ʻano hoʻonohonoho substrate Si like ʻole e like me <111>, <100>, a me nā mea ʻē aʻe e hoʻokūkū i nā koi hāmeʻa kikoʻī.
●Ke kū'ē kū'ē i hoʻopilikino ʻia:E koho ma waena o nā koho resistivity like ʻole no Si, mai ka semi-insulating a i ka resistivity kiʻekiʻe a me ka resistivity haʻahaʻa e hoʻomaikaʻi i ka hana o ka hāmeʻa.
●ʻAno Doping:Loaʻa i ka doping ʻano-N a i ʻole ʻano-P e hoʻokō i nā koi o nā mea mana, nā transistors RF, a i ʻole nā LED.
●Hoʻemi ʻia ke kahe koko kiʻekiʻe:He kiʻekiʻe ka volta breakdown o nā wafers GaN-on-Si (a hiki i ka 1200V), e ʻae ana iā lākou e lawelawe i nā noi volta kiʻekiʻe.
●Nā wikiwiki hoʻololi wikiwiki:ʻOi aku ka kiʻekiʻe o ka neʻe ʻana o ka electron o GaN a me nā pohō hoʻololi haʻahaʻa ma mua o ka silicon, e hana ana i nā wafers GaN-on-Si i kūpono no nā kaapuni wikiwiki kiʻekiʻe.
● Hana Hoʻonui i ka Hana Wela:ʻOiai ke haʻahaʻa o ka conductivity thermal o ka silicon, hāʻawi mau ʻo GaN-on-Si i ke kūpaʻa thermal kiʻekiʻe, me ka hoʻopuehu wela maikaʻi aʻe ma mua o nā mea silicon kuʻuna.
Nā Kikoʻī ʻenehana
| Palena | Waiwai |
| Ka nui o ka Wafer | 4-'īniha, 6-'īniha |
| Hoʻonohonoho ʻana o ka substrate Si | <111>, <100>, maʻamau |
| Ke kū'ē ʻana o Si | Kū'ē kiʻekiʻe, Semi-insulating, Kū'ē haʻahaʻa |
| ʻAno Doping | ʻAno-N, ʻano-P |
| Mānoanoa o ka Papa GaN | 100 nm - 5000 nm (hiki ke hoʻopilikino ʻia) |
| Papa Pale AlGaN | 24% – 28% Al (maʻamau 10-20 nm) |
| Uila Haʻihaʻi | 600V – 1200V |
| Ka Neʻe ʻana o ka Uila | 2000 cm²/V·s |
| Ka Alapine Hoʻololi | A hiki i ka 18 GHz |
| ʻO ka ʻoʻoleʻa o ka ʻili wafer | RMS ~0.25 nm (AFM) |
| Ke kū'ē ʻana i ka pepa GaN | 437.9 Ω·cm² |
| Holoi Wafer Holoʻokoʻa | < 25 µm (ʻoi loa) |
| Ka Hoʻokele Wela | 1.3 – 2.1 W/cm·K |
Nā noi
Nā Uila ManaHe kūpono ʻo GaN-on-Si no nā mea uila mana e like me nā mea hoʻonui mana, nā mea hoʻololi, a me nā mea hoʻololi i hoʻohana ʻia i nā ʻōnaehana ikehu hou, nā kaʻa uila (EV), a me nā lako ʻoihana. ʻO kona volta haki kiʻekiʻe a me ka pale haʻahaʻa e hōʻoia i ka hoʻololi mana kūpono, ʻoiai ma nā noi mana kiʻekiʻe.
Nā Kamaʻilio RF a me MicrowaveHāʻawi nā wafers GaN-on-Si i nā hiki ke alapine kiʻekiʻe, e kūpono ana iā lākou no nā mea hoʻonui mana RF, nā kamaʻilio ukali, nā ʻōnaehana radar, a me nā ʻenehana 5G. Me nā wikiwiki hoʻololi kiʻekiʻe a me ka hiki ke hana ma nā alapine kiʻekiʻe (a hiki i18 GHz), hāʻawi nā polokalamu GaN i ka hana maikaʻi loa ma ia mau noi.
Nā ʻElekole KaʻaHoʻohana ʻia ʻo GaN-on-Si i nā ʻōnaehana mana kaʻa, menā mea hoʻoili ma luna o ka moku (OBC)a meNā mea hoʻololi DC-DCʻO kona hiki ke hana i nā mahana kiʻekiʻe a kū i nā pae voltage kiʻekiʻe e kūpono ia no nā noi kaʻa uila e koi ana i ka hoʻololi mana ikaika.
LED a me OptoelectronicsʻO GaN ka mea i koho ʻia no nā LED polū a me keʻokeʻoHoʻohana ʻia nā wafers GaN-on-Si e hana i nā ʻōnaehana kukui LED kiʻekiʻe, e hāʻawi ana i ka hana maikaʻi loa i ke kukui ʻana, nā ʻenehana hōʻike, a me nā kamaʻilio optical.
Nīnau a me nā Pane
Q1: He aha ka pōmaikaʻi o GaN ma mua o ka silicon i nā mea uila?
A1:Loaʻa iā GaN kahika laulā ākea (3.4 eV)ma mua o ka silicon (1.1 eV), kahi e hiki ai iā ia ke kū i nā voltages a me nā mahana kiʻekiʻe. Hiki i kēia waiwai iā GaN ke lawelawe i nā noi mana kiʻekiʻe me ka ʻoi aku ka maikaʻi, e hōʻemi ana i ka nalowale o ka mana a me ka hoʻonui ʻana i ka hana o ka ʻōnaehana. Hāʻawi pū ʻo GaN i nā wikiwiki hoʻololi wikiwiki, he mea nui ia no nā mea hana alapine kiʻekiʻe e like me nā amplifiers RF a me nā mea hoʻololi mana.
Q2: Hiki iaʻu ke hoʻopilikino i ke kuhikuhi substrate Si no kaʻu noi?
A2:ʻAe, ke hāʻawi aku nei mākounā kuhikuhi substrate Si i hiki ke hoʻopilikino ʻiae like me<111>, <100>, a me nā kuhikuhi ʻē aʻe e pili ana i nā koi o kāu hāmeʻa. He kuleana koʻikoʻi ke kuhikuhi o ka substrate Si i ka hana o ka hāmeʻa, me nā ʻano uila, ke ʻano wela, a me ke kūpaʻa mechanical.
Q3: He aha nā pono o ka hoʻohana ʻana i nā wafers GaN-on-Si no nā noi alapine kiʻekiʻe?
A3:ʻOi aku ka maikaʻi o nā wafers GaN-on-Sinā wikiwiki hoʻololi, e hiki ai ke hana wikiwiki i nā alapine kiʻekiʻe aʻe i hoʻohālikelike ʻia me ka silicon. ʻO kēia ka mea kūpono iā lākou noRFa memicrowavenā noi, a me ke alapine kiʻekiʻenā mea hana manae like meNā HEMT(Nā Transistors Mobility Electron Kiʻekiʻe) a meNā mea hoʻonui RFʻO ka neʻe ʻana o ka electron kiʻekiʻe o GaN e hopena i nā pohō hoʻololi haʻahaʻa a me ka hoʻomaikaʻi ʻana i ka pono.
Q4: He aha nā koho doping i loaʻa no nā wafers GaN-on-Si?
A4:Hāʻawi mākou i nā mea ʻeluaʻAno-Na meʻAno-Pnā koho doping, i hoʻohana pinepine ʻia no nā ʻano mea semiconductor like ʻole.ʻO ka doping ʻano-Nkūpono nonā transistors manaa meNā mea hoʻonui RF, ʻoiaiʻO ka doping ʻano-PHoʻohana pinepine ʻia no nā polokalamu optoelectronic e like me nā LED.
Hopena
Hāʻawi kā mākou Gallium Nitride ma Silicon (GaN-on-Si) Wafers i hoʻopilikino ʻia i ka hopena kūpono no nā noi alapine kiʻekiʻe, mana kiʻekiʻe, a me nā mahana kiʻekiʻe. Me nā kuhikuhi substrate Si i hoʻopilikino ʻia, resistivity, a me ka doping ʻano N-ʻano/P-ʻano, ua hana kūikawā ʻia kēia mau wafers e hoʻokō i nā pono kikoʻī o nā ʻoihana mai nā uila mana a me nā ʻōnaehana kaʻa a hiki i ke kamaʻilio RF a me nā ʻenehana LED. Ke hoʻohana nei i nā waiwai kiʻekiʻe o GaN a me ka scalability o silicon, hāʻawi kēia mau wafers i ka hana i hoʻonui ʻia, ka pono, a me ka pale ʻana i ka wā e hiki mai ana no nā polokalamu hanauna e hiki mai ana.
Kiʻikuhi kikoʻī
