Gallium Nitride ma Silicon wafer 4inihi 6inihi i hoʻonohonoho ʻia ʻo Si Substrate Orientation, Resistivity, a me nā koho N-type/P-type
Nā hiʻohiʻona
●Wide Bandgap:Hāʻawi ʻo GaN (3.4 eV) i kahi hoʻomaikaʻi koʻikoʻi i ka hana kiʻekiʻe, ka mana kiʻekiʻe, a me ka hana wela kiʻekiʻe i hoʻohālikelike ʻia me ka silikoni kuʻuna, e kūpono ana ia no nā mea mana a me nā mea hoʻonui RF.
● Hoʻonohonoho ʻia ʻo Si Substrate:E koho mai i nā ʻano hoʻonohonoho ʻokoʻa Si substrate e like me <111>, <100>, a me nā mea ʻē aʻe e hoʻohālikelike i nā koi pono o ka mīkini.
● Kū'ē kūʻokoʻa:E koho ma waena o nā koho resistivity like ʻole no Si, mai ka semi-insulating a hiki i ke kiʻekiʻe-resistivity a me ka haʻahaʻa-resistivity e hoʻonui i ka hana o ka mea hana.
● ʻAno Doping:Loaʻa i ka N-type a i ʻole P-type doping e kūlike i nā koi o nā mana mana, RF transistors, a i ʻole nā LED.
●Kuhi Haʻi Kiʻekiʻe:Loaʻa i nā wafers ʻo GaN-on-Si ka uila haʻihaʻi kiʻekiʻe (a hiki i 1200V), hiki iā lākou ke lawelawe i nā noi kiʻekiʻe-voltage.
● ʻOi aku ka wikiwiki o ka hoʻololi ʻana:Loaʻa i ka GaN ka mobility electron kiʻekiʻe a me nā poho hoʻololi haʻahaʻa ma mua o ke silika, e hana ana i nā wafers GaN-on-Si i kūpono no nā kaapuni kiʻekiʻe.
● Hoʻonui i ka hana wela:ʻOiai ka haʻahaʻa haʻahaʻa haʻahaʻa haʻahaʻa o ke silika, hāʻawi mau ʻo GaN-on-Si i ke kūpaʻa wela ʻoi aku ka maikaʻi, me ka hoʻoheheʻe wela ʻoi aku ka maikaʻi ma mua o nā mea hana kilika kuʻuna.
Nā Kūlana ʻenehana
| ʻĀpana | Waiwai |
| Nui Wafer | 4-iniha, 6-iniha |
| ʻO ke ʻano o ka substrate | <111>, <100>, maʻamau |
| ʻO ka Resistivity | Kū'ē kiʻekiʻe, Semi-insulating, Low-resistivity |
| ʻAno Doping | ʻAno-N, ʻano-P |
| ʻO ka Mānoanoa Layer GaN | 100 nm – 5000 nm (hiki ke hoʻololi ʻia) |
| ʻO AlGaN Layer Paʻa | 24% – 28% Al (maʻamau 10-20 nm) |
| Ka Volta Haʻihaʻi | 600V – 1200V |
| Electron Mobility | 2000 knm²/V·s |
| Hoʻololi pinepine | A hiki i 18 GHz |
| ʻO ka ʻeleʻele Wafer | RMS ~0.25 nm (AFM) |
| Kūʻē Pepa GaN | 437.9 Ω·cm² |
| Huina Wafer Warp | < 25 µm (kiʻekiʻe loa) |
| ʻO ka hoʻoili wela | 1.3 – 2.1 W/cm·K |
Nā noi
Mea uila uila: He mea kūponoʻo GaN-on-Si no ka uila uila e like me nā mea hoʻonui mana, nā mea hoʻololi, a me nā mea hoʻohuli i hoʻohanaʻia i nā pūnaewele ikehu hou, nā kaʻa uila (EVs), a me nā mea hanaʻoihana. ʻO kāna puʻupuʻu haʻahaʻa kiʻekiʻe a me ka haʻahaʻa haʻahaʻa e hōʻoia i ka hoʻololi ʻana i ka mana kūpono, ʻoiai ma nā noi mana kiʻekiʻe.
RF a me Microwave Communications: Hāʻawi nā wafers GaN-on-Si i nā mana alapine kiʻekiʻe, e hoʻomaʻamaʻa iā lākou no nā mea hoʻonui mana RF, nā kamaʻilio satellite, nā ʻōnaehana radar, a me nā ʻenehana 5G. Me nā wikiwiki hoʻololi kiʻekiʻe a me ka hiki ke hana i nā alapine kiʻekiʻe (a hiki i18 GHz), Hāʻawi nā mea GaN i ka hana ʻoi aku ka maikaʻi ma kēia mau noi.
Kaʻa uila: Hoʻohana ʻia ʻo GaN-on-Si i nā ʻōnaehana mana automotive, menā loina ma luna o ka papa (OBC)aNā mea hoʻololi DC-DC. ʻO kona hiki ke hana i nā mahana kiʻekiʻe a kū i nā kiʻekiʻe o ka volta kiʻekiʻe e kūpono i nā noi kaʻa uila e koi ana i ka hoʻololi mana ikaika.
LED a me Optoelectronics: ʻO GaN ka mea koho no nā LED uliuli a keʻokeʻo. Hoʻohana ʻia nā wafers GaN-on-Si e hana i nā ʻōnaehana kukui LED kiʻekiʻe, e hāʻawi ana i ka hana maikaʻi loa i nā kukui, nā ʻenehana hōʻike, a me nā kamaʻilio optical.
N&A
Q1: He aha ka maikaʻi o GaN ma luna o ke silika i nā mea uila?
A1:Loaʻa iā GaN kahiʻākea huila ʻoi aku ka nui (3.4 eV)ma mua o ka silikoni (1.1 eV), hiki iā ia ke pale i nā voltage kiʻekiʻe a me nā mahana. Hiki i kēia waiwai iā GaN ke lawelawe pono i nā noi mana kiʻekiʻe, e hōʻemi ana i ka nalowale o ka mana a me ka hoʻonui ʻana i ka hana ʻōnaehana. Hāʻawi pū ʻo GaN i nā wikiwiki hoʻololi wikiwiki, he mea koʻikoʻi ia no nā hāmeʻa kiʻekiʻe e like me nā RF amplifier a me nā mea hoʻololi mana.
Q2: Hiki iaʻu ke hoʻopilikino i ka ʻaoʻao Si substrate no kaʻu noi?
A2:ʻAe, hāʻawi mākoucustomizable Si substrate orientationse like me<111>, <100>, a me nā hoʻonohonoho ʻē aʻe e pili ana i nā koi o kāu hāmeʻa. He koʻikoʻi ka hoʻonohonoho ʻana o ka substrate Si i ka hana ʻana o ka hāmeʻa, me nā hiʻohiʻona uila, nā ʻano wela, a me ke kūpaʻa mechanical.
Q3: He aha nā pōmaikaʻi o ka hoʻohana ʻana i nā wafers GaN-on-Si no nā noi kiʻekiʻe?
A3:Hāʻawi maikaʻi nā wafers GaN-on-Sihoʻololi wikiwiki, hiki i ka hana wikiwiki i nā alapine kiʻekiʻe ke hoʻohālikelike ʻia me ke silika. ʻO kēia ka mea kūpono iā lākou noRFamicrowavenā noi, a me ke alapine kiʻekiʻenā mea manae like meHEMT(High Electron Mobility Transistors) aNā mea hoʻonui RF. ʻO ka mobility electron kiʻekiʻe o GaN ka hopena i nā poho hoʻololi haʻahaʻa a me ka hoʻomaikaʻi maikaʻi ʻana.
Q4: He aha nā koho doping i loaʻa no nā wafers GaN-on-Si?
A4:Hāʻawi mākou i nā mea ʻeluaN-ʻanoaʻAno-Pnā koho doping, i hoʻohana mau ʻia no nā ʻano mea semiconductor like ʻole.N-type dopingkūpono nonā transistors manaaNā mea hoʻonui RF, oiaiP-type dopingHoʻohana pinepine ʻia no nā mea optoelectronic e like me nā LED.
Ka hopena
ʻO kā mākou Customized Gallium Nitride on Silicon (GaN-on-Si) Wafers e hāʻawi i ka hopena kūpono no nā noi kiʻekiʻe, kiʻekiʻe, a me ka wela wela. Me nā ʻano hoʻohālikelike Si substrate, resistivity, a me N-type/P-type doping, ua hana ʻia kēia mau wafers e hoʻokō i nā pono kikoʻī o nā ʻoihana mai ka uila uila a me nā ʻōnaehana automotive a hiki i ke kamaʻilio RF a me nā ʻenehana LED. Ke hoʻohana nei i nā waiwai kiʻekiʻe o GaN a me ka scalability o ke silika, hāʻawi kēia mau wafers i ka hana i hoʻonui ʻia, ka pono, a me ka hōʻoia ʻana i ka wā e hiki mai ana no nā mea hana e hiki mai ana.
Kiʻi kikoʻī
