ʻO GaN-on-Diamond Wafers 4inch 6inch Total epi mānoanoa (micron) 0.6 ~ 2.5 a i hana ʻia no nā noi kiʻekiʻe.

ʻO ka wehewehe pōkole:

ʻO nā wafers GaN-on-Diamond he mea hoʻoponopono waiwai holomua i hoʻolālā ʻia no nā noi kiʻekiʻe, mana kiʻekiʻe, a me nā noi kiʻekiʻe, e hui pū ana i nā waiwai kupaianaha o Gallium Nitride (GaN) me ka hoʻokele wela o Diamond. Loaʻa kēia mau wafers ma nā anawaena 4-ʻīniha a me 6-ʻīniha, me ka mānoanoa o ka papa epi maʻamau mai ka 0.6 a i ka 2.5 microns. Hāʻawi kēia hui ʻana i ka hoʻoheheʻe wela ʻoi aku ka maikaʻi, ka lawelawe ʻana i ka mana kiʻekiʻe, a me ka hana kiʻekiʻe-frequency maikaʻi loa, e hoʻolilo iā lākou i mea kūpono no nā noi e like me RF power amplifiers, radar, microwave communication system, a me nā mea uila hana kiʻekiʻe.


Huahana Huahana

Huahana Huahana

Waiwai

Nui Wafer:
Loaʻa i nā anawaena 4-inch a me 6-inch no ka hoʻohui like ʻana i nā kaʻina hana semiconductor.
Loaʻa nā koho hoʻopilikino no ka nui wafer, ma muli o nā koi o ka mea kūʻai aku.

Epitaxial Layer mānoanoa:
Māhele: 0.6 µm a i 2.5 µm, me nā koho no nā mānoanoa i hoʻonohonoho ʻia e pili ana i nā pono noi kikoʻī.
Hoʻolālā ʻia ka papa epitaxial e hōʻoia i ka ulu ʻana o ke aniani GaN kiʻekiʻe, me ka mānoanoa kūpono e kaulike i ka mana, pane pinepine, a me ka hoʻokele wela.

ʻO ka wela wela:
Hāʻawi ka papa daimana i kahi conductivity wela kiʻekiʻe loa ma kahi o 2000-2200 W/m·K, e hōʻoia ana i ka hoʻohemo ʻana o ka wela mai nā mea mana kiʻekiʻe.

Nā waiwai waiwai o GaN:
Wide Bandgap: Loaʻa ka papa GaN mai kahi bandgap ākea (~ 3.4 eV), e hiki ai ke hana ma nā wahi paʻakikī, ka uila kiʻekiʻe, a me nā kūlana wela kiʻekiʻe.
Electron Mobility: ʻO ka neʻe electron kiʻekiʻe (ma kahi o 2000 cm²/V·s), e alakaʻi ana i ka hoʻololi wikiwiki a me nā alapine hana kiʻekiʻe.
Kiʻekiʻe Breakdown Voltage: ʻOi aku ka kiʻekiʻe o ka puʻupuʻu haʻihaʻi o GaN ma mua o nā mea semiconductor maʻamau, kūpono ia no nā noi ikaika.

Hana Uila:
Kiʻekiʻe Mana Kiʻekiʻe: GaN-on-Diamond wafers hiki i ka mana kiʻekiʻe i ka wā e mālama ana i kahi kumu liʻiliʻi, kūpono no nā mana amplifiers a me nā ʻōnaehana RF.
ʻO nā poho haʻahaʻa: ʻO ka hui pū ʻana o ka maikaʻi o GaN a me ka dissipation wela o daimana e alakaʻi i ka emi o ka mana i ka wā o ka hana.

ʻAno o ka ʻili:
Hoʻoulu Epitaxial Kūlana Kiʻekiʻe: Hoʻoulu ʻia ka papa GaN ma luna o ka substrate daimana, e hōʻoia ana i ka liʻiliʻi o ka dislocation density, kiʻekiʻe crystalline maikaʻi, a me ka hana ʻoi loa.

Kaulike:
Ka Mānoanoa a me ka Hoʻohui Hoʻohui: ʻO ka papa GaN a me ka substrate daimana e mālama i ka kūlike maikaʻi loa, koʻikoʻi no ka hana ʻana a me ka hilinaʻi.

Paʻa Kemika:
Hāʻawi ʻo GaN a me ke daimana i ke kūpaʻa kemika ʻokoʻa, e ʻae ana i kēia mau wafers e hana hilinaʻi i nā kaiapuni kemika paʻakikī.

Nā noi

RF Power Amplifiers:
He kūpono nā wafers GaN-on-Diamond no nā mea hoʻonui mana RF ma ke kelepona, nā ʻōnaehana radar, a me nā kamaʻilio satelite, e hāʻawi ana i ka pono kiʻekiʻe a me ka hilinaʻi i nā alapine kiʻekiʻe (e laʻa, 2 GHz a 20 GHz a ma waho aʻe).

Kūkākūkā Microwave:
ʻOi aku kēia mau wafers i nā ʻōnaehana kamaʻilio microwave, kahi mea koʻikoʻi ka puka mana kiʻekiʻe a me ka hōʻemi liʻiliʻi.

Nā ʻenehana Radar a me Sensing:
Hoʻohana nui ʻia nā wafers GaN-on-Diamond i nā ʻōnaehana radar, e hāʻawi ana i ka hana paʻa i nā noi kiʻekiʻe a me nā mana kiʻekiʻe, ʻoi aku hoʻi i ka pūʻali koa, automotive, a me nā ʻāpana aerospace.

Pūnaehana Satellite:
Ma nā ʻōnaehana kamaʻilio satellite, hōʻoia kēia mau wafers i ka lōʻihi a me ka hana kiʻekiʻe o ka mana amplifier, hiki ke hana i nā kūlana kūlohelohe.

Mea Kiekie Mana Kiekie:
ʻO nā mana hoʻokele wela o GaN-on-Diamond e kūpono iā lākou no nā uila uila kiʻekiʻe, e like me nā mea hoʻololi mana, nā mea hoʻohuli, a me nā relays solid-state.

Nā ʻōnaehana hoʻokele wela:
Ma muli o ke kiʻekiʻe o ka thermal conductivity o daimana, hiki ke hoʻohana ʻia kēia mau wafers i nā noi e koi ana i ka hoʻokele thermal ikaika, e like me ka mana kiʻekiʻe LED a me nā ʻōnaehana laser.

N&A no GaN-on-Diamond Wafers

Q1: He aha ka pono o ka hoʻohana ʻana i nā wafers GaN-on-Diamond i nā noi kiʻekiʻe?

A1:Hoʻohui nā wafers GaN-on-Diamond i ka mobility electron kiʻekiʻe a me ka bandgap ākea o GaN me ka conductivity thermal o ke daimana. ʻO kēia ka mea e hiki ai i nā mea hana kiʻekiʻe ke hana i nā pae mana kiʻekiʻe aʻo ka mālama pono ʻana i ka wela, e hōʻoia ana i ka ʻoi aku ka maikaʻi a me ka hilinaʻi e hoʻohālikelike ʻia i nā mea kahiko.

Q2: Hiki ke hoʻopilikino ʻia nā wafers GaN-on-Diamond no ka mana kūikawā a me nā koi alapine?

A2:ʻAe, hāʻawi nā wafers GaN-on-Diamond i nā koho maʻamau, me ka mānoanoa o ka papa epitaxial (0.6 µm a i 2.5 µm), ka nui wafer (4-ʻīniha, 6-ʻīniha), a me nā ʻāpana ʻē aʻe e pili ana i nā pono noi kikoʻī, e hāʻawi ana i ka maʻalahi no nā noi kiʻekiʻe a me nā alapine kiʻekiʻe.

Q3: He aha nā pōmaikaʻi nui o ke daimana ma ke ʻano he substrate no GaN?

A3:ʻO ka hoʻoili wela loa o Diamond (a hiki i 2200 W/m·K) ke kōkua pono i ka hoʻopau ʻana i ka wela i hana ʻia e nā hāmeʻa GaN mana kiʻekiʻe. ʻO kēia mana hoʻokele wela e hiki ai i nā mea hana GaN-on-Diamond ke hana i nā mana kiʻekiʻe a me nā alapine, e hōʻoia i ka hoʻomaikaʻi ʻana i ka hana a me ka lōʻihi.

Q4: Ua kūpono anei nā wafers GaN-on-Diamond no ka lewa a i ʻole nā ​​noi aerospace?

A4:ʻAe, kūpono nā wafers GaN-on-Diamond no ka lewa a me nā noi aerospace ma muli o ko lākou hilinaʻi kiʻekiʻe, nā mana hoʻokele wela, a me ka hana i nā kūlana koʻikoʻi, e like me ka radiation kiʻekiʻe, nā ʻano wela, a me ka hana kiʻekiʻe.

Q5: He aha ke ola i manaʻo ʻia o nā mea hana i hana ʻia mai nā wafers GaN-on-Diamond?

A5:ʻO ka hui pū ʻana o ka paʻa paʻa ʻana o GaN a me nā waiwai hoʻoheheʻe wela o ka daimana e hopena i kahi ola lōʻihi no nā mea hana. Hoʻolālā ʻia nā mea hana ʻo GaN-on-Diamond e hana i nā kaiapuni paʻakikī a me nā kūlana mana kiʻekiʻe me ka liʻiliʻi liʻiliʻi i ka manawa.

Q6: Pehea ka hopena o ka conductivity thermal o daimana i ka hana holoʻokoʻa o nā wafers GaN-on-Diamond?

A6:He kuleana koʻikoʻi ka conductivity thermal thermal o daimana i ka hoʻomaikaʻi ʻana i ka hana o nā wafers GaN-on-Diamond ma o ka lawe pono ʻana i ka wela i hana ʻia i nā noi mana kiʻekiʻe. Mālama kēia i ka mālama ʻana o nā hāmeʻa GaN i ka hana maikaʻi loa, e hōʻemi i ke koʻikoʻi wela, a pale i ka overheating, kahi paʻakikī maʻamau i nā mea semiconductor maʻamau.

Q7: He aha nā noi maʻamau kahi i hoʻokō ai nā wafers GaN-on-Diamond i nā mea semiconductor ʻē aʻe?

A7:ʻOi aku ka maikaʻi o nā wafers GaN-on-Diamond i nā mea ʻē aʻe i nā noi e koi ana i ka mālama ʻana i ka mana kiʻekiʻe, ka hana alapine kiʻekiʻe, a me ka hoʻokele wela maikaʻi. Hoʻopili kēia i nā mea hoʻonui mana RF, nā ʻōnaehana radar, kamaʻilio microwave, kamaʻilio satellite, a me nā mea uila mana kiʻekiʻe.

Ka hopena

Hāʻawi nā wafers GaN-on-Diamond i kahi hopena kūʻokoʻa no nā noi kiʻekiʻe a me nā mana kiʻekiʻe, e hui pū ana i ka hana kiʻekiʻe o GaN me nā waiwai wela o ka daimana. Me nā hiʻohiʻona maʻamau, ua hoʻolālā ʻia lākou e hoʻokō i nā pono o nā ʻoihana e koi ana i ka hāʻawi ʻana i ka mana maikaʻi, ka hoʻokele wela, a me ka hana kiʻekiʻe, e hōʻoiaʻiʻo ana i ka hilinaʻi a me ka lōʻihi i nā kaiapuni paʻakikī.

Kiʻi kikoʻī

GaN ma Diamond01
GaN ma Diamond02
GaN ma Diamond03
GaN ma Diamond04

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