HPSI SiC wafer dia: 3 iniha mānoanoa: 350um± 25 µm no Power Electronics

HPSI SiC wafer dia: 3 iniha mānoanoa: 350um± 25 µm no ka Power Electronics Featured Image

ʻO ka wehewehe pōkole:

ʻO ka HPSI (High-Purity Silicon Carbide) SiC wafer me ke anawaena o 3 iniha a me ka mānoanoa o 350 µm ± 25 µm ua hoʻolālā kūikawā ʻia no nā noi uila uila e koi ana i nā substrate hana kiʻekiʻe. Hāʻawi kēia SiC wafer i ka conductivity thermal kiʻekiʻe, ka uila hoʻohaʻahaʻa kiʻekiʻe, a me ka maikaʻi i nā mahana hana kiʻekiʻe, e hana ana ia i kahi koho kūpono no ka ulu nui ʻana o nā mea uila uila ikaika. He kūpono loa nā wafers SiC no nā noi kiʻekiʻe-voltage, kiʻekiʻe o kēia manawa, a me nā alapine kiʻekiʻe, kahi i hoʻokō ʻole ai nā substrates silicon kuʻuna i nā koi hana.
Loaʻa kā mākou HPSI SiC wafer, i hana ʻia me ka hoʻohana ʻana i nā ʻenehana alakaʻi ʻoihana hou loa, i loaʻa i nā papa he nui, i hoʻolālā ʻia kēlā me kēia e hoʻokō i nā koi hana kikoʻī. Hōʻike ka wafer i ka kūpaʻa o ke kūkulu ʻana, nā waiwai uila, a me ka maikaʻi o ka ʻili, e hōʻoia ana e hiki iā ia ke hāʻawi i ka hana hilinaʻi i nā noi koi, me nā semiconductors mana, nā kaʻa uila (EVs), nā ʻōnaehana ikehu hou, a me ka hoʻololi ʻana i ka mana ʻoihana.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Palapala noi

Hoʻohana ʻia nā wafers HPSI SiC i kahi ākea o nā noi uila uila, me:

Nā Semiconductors Mana:Hoʻohana mau ʻia nā wafers SiC i ka hana ʻana i nā diodes mana, transistors (MOSFETs, IGBTs), a me thyristors. Hoʻohana nui ʻia kēia mau semiconductor i nā noi hoʻololi mana e koi ai i ka pono kiʻekiʻe a me ka hilinaʻi, e like me nā kaʻa kaʻa ʻenehana, nā lako mana, a me nā inverters no nā ʻōnaehana ikehu hou.
Nā Kaʻa Uila (EV):I loko o nā kaʻa kaʻa uila, hāʻawi nā mea mana e pili ana i ka SiC i ka wikiwiki o ka hoʻololi ʻana, ʻoi aku ka maikaʻi o ka ikehu, a me ka hoʻemi ʻana i nā poho wela. He kūpono nā ʻāpana SiC no nā noi ma nā ʻōnaehana hoʻokele pākaukau (BMS), ka hoʻouka ʻana i nā ʻōnaehana, a me nā mea hoʻoili ma luna o ka papa (OBCs), kahi mea koʻikoʻi ka hoʻemi ʻana i ke kaumaha a me ka hoʻonui ʻana i ka hoʻololi ʻana i ka ikehu.

Pūnaehana ikehu hou:Hoʻohana nui ʻia nā wafers SiC i nā mea hoʻohuli o ka lā, nā mea hana turbine makani, a me nā ʻōnaehana mālama ikehu, kahi e pono ai ka hana kiʻekiʻe a me ka ikaika. Hiki i nā ʻāpana pili i ka SiC ke hoʻonui i ka mana kiʻekiʻe a me ka hoʻonui ʻana i ka hana ma kēia mau noi, e hoʻomaikaʻi ana i ka hoʻololi ʻana i ka ikehu holoʻokoʻa.

ʻOihana uila uila:Ma nāʻoihanaʻoihana kiʻekiʻe, e like me nā kaʻa kaʻa, nā robotics, a me nā lako mana nui, hiki i ka hoʻohanaʻana i nā wafers SiC ke hoʻonui i ka hana ma keʻano o ka pono, ka hilinaʻi, a me ka hoʻomalu wela. Hiki i nā mea SiC ke mālama i nā alapine hoʻololi kiʻekiʻe a me nā mahana kiʻekiʻe, e kūpono iā lākou no nā kaiapuni koi.

Ke kelepona a me nā kikowaena ʻikepili:Hoʻohana ʻia ʻo SiC i nā lako mana no nā lako kelepona a me nā kikowaena data, kahi mea koʻikoʻi ka hilinaʻi kiʻekiʻe a me ka hoʻololi mana kūpono. Hiki i nā mea mana e pili ana i ka SiC ke ʻoi aku ka maikaʻi ma nā liʻiliʻi liʻiliʻi, ʻo ia ka mea i unuhi ʻia i ka hoʻemi ʻana i ka mana a me ka ʻoi aku ka maikaʻi o ka hoʻoluʻu ʻana i nā ʻōnaehana nui.

ʻO ke kaha haʻahaʻa haʻahaʻa, haʻahaʻa haʻahaʻa, a me ka conductivity thermal maikaʻi loa o nā wafers SiC e hoʻolilo iā lākou i substrate kūpono no kēia mau noi holomua, e hiki ai i ka hoʻomohala ʻana i nā mea uila uila e hiki mai ana.

Waiwai

Waiwai	Waiwai
Anawaena Wafer	3 iniha (76.2 mm)
Mānoanoa Wafer	350 µm ± 25 µm
Kūlana Wafer	<0001> ma-axis ± 0.5°
ʻOiʻa Micropipe (MPD)	≤ 1 knm⁻²
Kū'ē Uila	≥ 1E7 Ω·cm
Dopant	Wehe ʻia
Kūlana Pāha mua	{11-20} ± 5.0°
Ka lōʻihi pālahalaha	32.5 mm ± 3.0 mm
Ka lōʻihi pālahalaha lua	18.0 mm ± 2.0 mm
Kūlana Pāpā lua	ʻO ke alo i luna: 90° CW mai ka papahele mua ± 5.0°
Hoʻokuʻu Edge	3 mm
LTV/TTV/Bow/Warp	3 µm / 10 µm / ±30 µm / 40 µm
ʻAole ʻili	C-maka: Hoʻomaʻamaʻa, Si-maka: CMP
Nā māwae (i nānā ʻia e ke kukui ikaika kiʻekiʻe)	ʻAʻohe
Nā Papa Hex (i nānā ʻia e ke kukui ikaika kiʻekiʻe)	ʻAʻohe
Nā ʻāpana Polytype (i nānā ʻia e ke kukui ikaika kiʻekiʻe)	ʻĀpana hui 5%
Nā ʻōpala (nānā ʻia e ke kukui ikaika kiʻekiʻe)	≤ 5 ʻōpala, ka lōʻihi kumulative ≤ 150 mm
ʻO ka ʻoki ʻoki	ʻAʻole ʻae ʻia ≥ 0.5 mm laula a me ka hohonu
ʻO ka hoʻohaumia ʻana o ka ʻili (nānā ʻia e ke kukui ikaika kiʻekiʻe)	ʻAʻohe

Nā Pōmaikaʻi Nui

Kiʻekiʻe Thermal Conductivity:ʻIke ʻia nā wafers SiC no ko lākou hiki ke hoʻokaʻawale i ka wela, kahi e hiki ai i nā mea mana ke hana i nā ʻoi aku ka maikaʻi a mālama i nā au kiʻekiʻe me ka wela ʻole. He mea koʻikoʻi kēia hiʻohiʻona i ka uila uila kahi paʻakikī nui ka hoʻokele wela.
Kiʻekiʻe Breakdown Voltage:ʻO ka bandgap ākea o SiC hiki i nā mea hana ke ʻae i nā kiʻekiʻe o ka volta kiʻekiʻe, e hoʻolilo iā lākou i mea kūpono no nā noi kiʻekiʻe-voltage e like me nā mana mana, nā kaʻa uila, a me nā mīkini ʻenehana.
Hoʻoikaika kiʻekiʻe:ʻO ka hui pū ʻana o nā alapine hoʻololi kiʻekiʻe a me ka haʻahaʻa haʻahaʻa i ka hopena i nā mea hana me ka emi o ka ikehu, e hoʻomaikaʻi i ka pono holoʻokoʻa o ka hoʻololi ʻana i ka mana a hōʻemi i ka pono o nā ʻōnaehana hoʻomaha paʻakikī.
Pono i loko o nā Kaiapuni ʻino:Hiki iā SiC ke hana ma nā wela kiʻekiʻe (a hiki i 600°C), i kūpono ia no ka hoʻohana ʻana i nā kaiapuni e hōʻino ʻole ai i nā mea hana maʻamau.
Mālama i ka ikehu:Hoʻomaikaʻi nā ʻenehana mana SiC i ka pono o ka hoʻololi ʻana i ka ikehu, he mea koʻikoʻi ia i ka hōʻemi ʻana i ka hoʻohana ʻana i ka mana, ʻoi aku hoʻi i nā ʻōnaehana nui e like me nā mea hoʻololi mana ʻenehana, nā kaʻa uila, a me nā ʻōnaehana ikehu hou.