HPSI SiCOI wafer 4 6 iniha Hydropholic Bonding

HPSI SiCOI wafer 4 6inihi Hydropholic Bonding Kii

ʻO ka wehewehe pōkole:

Hoʻokumu ʻia nā wafers semi-insulating high-purity (HPSI) 4H-SiCOI me ka hoʻohana ʻana i nā ʻenehana paʻa kiʻekiʻe a me nā ʻenehana thinning. Hana ʻia nā wafers e ka hoʻopaʻa ʻana i nā substrates silicon carbide 4H HPSI ma nā ʻāpana wai wela ma o nā ʻano kī ʻelua: hydrophilic (direct) bonding and surface activated bonding. Hoʻopuka ka mea hope i kahi papa hoʻololi waena (e like me ka silicon amorphous, aluminum oxide, a i ʻole titanium oxide) e hoʻomaikaʻi i ka maikaʻi o ka pilina a hōʻemi i nā ʻōhū, kūpono loa no nā noi optical. Loaʻa ka mana mānoanoa o ka papa kalapona silika ma o ka SmartCut i hoʻokumu ʻia implantation a i ʻole ka wili a me nā kaʻina hana polishing CMP. Hāʻawi ʻo SmartCut i ka kūlike mānoanoa kiʻekiʻe (50nm–900nm me ± 20nm uniformity) akā hiki ke hoʻoulu i ka pōʻino aniani liʻiliʻi ma muli o ka hoʻokomo ʻana i ka ion, e pili ana i ka hana ʻana o ka mea hana. ʻO ka wili a me ka CMP polishing e pale i ka pōʻino waiwai a makemake ʻia no nā kiʻiʻoniʻoni mānoanoa (350nm–500µm) a me nā noi quantum a i ʻole PIC, ʻoiai me ka liʻiliʻi o ka mānoanoa like ʻole (± 100nm). He 1µm ±0.1µm SiC papa ma kahi 3µm SiO2 papa ma luna o 675µm Si substrates me ka laumania o ka ili (Rq <0.2nm). Hāʻawi kēia mau wafers HPSI SiCOI i ka MEMS, PIC, quantum, a me ka hana ʻana i nā mea hana optical me ka maikaʻi o nā mea waiwai a me ka maʻalahi o ka hana.

E hoʻouna i ka leka uila iā mākou

Nā hiʻohiʻona

ʻO SiCOI Wafer (Silicon Carbide-on-Insulator) Hōʻike Manaʻo

ʻO nā wafers SiCOI he mea hou-hanau semiconductor substrate e hui pū ana i ka Silicon Carbide (SiC) me kahi papa insulating, pinepine ʻo SiO₂ a i ʻole sapphire, e hoʻomaikaʻi i ka hana ma ka uila uila, RF, a me photonics. Aia ma lalo iho kahi kikoʻī kikoʻī o kā lākou mau waiwai i hoʻokaʻawale ʻia i nā ʻāpana koʻikoʻi:

Waiwai	wehewehe
Huina Mea	ʻO ka papa Silicon Carbide (SiC) i hoʻopaʻa ʻia ma kahi substrate insulating (maʻamau ʻo SiO₂ a i ʻole sapphire)
Hoʻomoe Crystal	ʻO ka maʻamau 4H a i ʻole 6H polytypes o SiC, ʻike ʻia no ka maikaʻi aniani kiʻekiʻe a me ka like
Na Waiwai Uila	Kiʻekiʻe breakdown uila kahua (~ 3 MV/cm), ākea bandgap (~ 3.26 eV no 4H-SiC), haʻahaʻa leakage manawa
ʻO ka hoʻoili wela	ʻO ka hoʻoili wela wela kiʻekiʻe (~ 300 W/m·K), hiki ke hoʻopau maikaʻi i ka wela
Laena Dielectric	Hāʻawi ka insulating layer (SiO₂ a i ʻole sapphire) i ka hoʻokaʻawale uila a hōʻemi i ka capacitance parasitic
Na Waiwai Mechanical	ʻO ka paʻakikī kiʻekiʻe (~ 9 Mohs scale), ka ikaika mechanical maikaʻi, a me ke kūpaʻa wela
Hoʻopau ʻili	ʻO ka maʻamau maʻamau me ka haʻahaʻa haʻahaʻa haʻahaʻa, kūpono no ka hana ʻana i nā mea hana
Nā noi	ʻO nā uila uila, nā mea MEMS, nā mea RF, nā mea ʻike e koi ana i ka wela kiʻekiʻe a me ka hoʻomanawanui

ʻO nā wafers SiCOI (Silicon Carbide-on-Insulator) e hōʻike ana i kahi ʻōnaehana semiconductor substrate kiʻekiʻe, nona kahi ʻāpana lahilahi kiʻekiʻe o ka silicon carbide (SiC) i hoʻopaʻa ʻia ma kahi papa insulating, maʻamau ka silicon dioxide (SiO₂) a i ʻole sapphire. ʻO Silicon carbide kahi semiconductor ākea-bandgap i ʻike ʻia no kona hiki ke kū i nā volta kiʻekiʻe a me nā wela kiʻekiʻe, me ka conductivity thermal maikaʻi loa a me ka ʻoi aku ka paʻakikī mechanical, e kūpono ana ia no nā noi uila kiʻekiʻe, kiʻekiʻe-frequency, a me ka wela wela.

Hāʻawi ka papa insulating i nā wafers SiCOI i ka hoʻokaʻawale uila kūpono, e hōʻemi nui ana i ka capacitance parasitic a me nā kahe leakage ma waena o nā mea hana, e hoʻonui ai i ka hana a me ka hilinaʻi holoʻokoʻa. Hoʻomaʻamaʻa pololei ʻia ka ʻili wafer e hoʻokō i ka ultra-smoothness me nā hemahema liʻiliʻi, e hoʻokō i nā koi koʻikoʻi o ka hana ʻana i nā mea hana micro-a me nano-scale.

ʻAʻole hoʻomaikaʻi wale kēia ʻano hana i nā hiʻohiʻona uila o nā mea SiC akā hoʻomaikaʻi nui i ka hoʻokele thermal a me ke kūpaʻa mechanical. ʻO ka hopena, hoʻohana nui ʻia nā wafers SiCOI i ka uila uila, nā ʻāpana radio frequency (RF), nā ʻōnaehana microelectromechanical (MEMS), a me nā mea uila kiʻekiʻe. ʻO ka holoʻokoʻa, hui pū ʻia nā wafers SiCOI i nā waiwai kino o ka silicon carbide me nā pono hoʻokaʻawale uila o kahi papa insulator, e hāʻawi ana i kumu kūpono no ka hanauna hou o nā mea hana semiconductor kiʻekiʻe.

ʻO ka noi a SiCOI wafer

Nā Mea Hana Uila

Nā hoʻololi kiʻekiʻe a me ka mana kiʻekiʻe, MOSFET, a me nā diodes

Loaʻa ka pōmaikaʻi mai ka bandgap ākea o SiC, ka uila haʻihaʻi kiʻekiʻe, a me ke kūpaʻa wela

Hoʻemi i nā poho mana a hoʻomaikaʻi maikaʻi i nā ʻōnaehana hoʻololi mana

Nā ʻāpana lekiō (RF).

Nā transistors a me nā mea hoʻonui kiʻekiʻe

Hoʻonui ka capacitance parasitic haʻahaʻa ma muli o ka insulating layer i ka hana RF

He kūpono no ke kamaʻilio 5G a me nā ʻōnaehana radar

Pūnaehana Microelectromechanical (MEMS)

ʻO nā sensor a me nā mea hana e hana ana i nā wahi paʻakikī

ʻO ka ikaika o ka mīkini a me ka inertness kemika e hoʻonui i ke ola o ka mīkini

Loaʻa nā mea ʻike kaomi, nā accelerometers, a me nā gyroscopes

Mea Uila Kiekie

Electronics no ka automotive, aerospace, a me nā noi ʻoihana

E hana me ka hilinaʻi ma nā mahana kiʻekiʻe kahi e hāʻule ai ke silika

Nā Mea Hana Kiʻi

Hoʻohui me nā ʻāpana optoelectronic ma nā substrate insulator

Hiki i nā kiʻi paʻi kiʻi ma luna o ka puʻupuʻu me ka maikaʻi o ka hoʻokele wela

Nīnau a SiCOI wafer

N:he aha ka SiCOI wafer

A:ʻO ka wafer SiCOI ke kū nei no ka wafer Silicon Carbide-on-Insulator. He ʻano ia o ka semiconductor substrate kahi i hoʻopaʻa ʻia ai kahi ʻāpana lahilahi o ka silicon carbide (SiC) i kahi papa insulating, maʻamau ka silicon dioxide (SiO₂) a i ʻole he sapphire i kekahi manawa. Ua like kēia ʻano i ka manaʻo me nā wafers Silicon-on-Insulator (SOI) kaulana akā hoʻohana ʻo SiC ma kahi o ke silika.