Wafers Indium Antimonide (InSb) N ʻano P ʻano Epi mākaukau wehe ʻia Te doped a Ge doped 2 ʻīniha 3 ʻīniha 4 ʻīniha ka mānoanoa Indium Antimonide (InSb) wafers
Nā hiʻohiʻona
Nā Koho Doping:
1. Hoʻopau ʻole ʻia:Hoʻokuʻu ʻia kēia mau wafers mai nā mea hana doping, e hoʻolilo iā lākou i mea kūpono no nā noi kūikawā e like me ka ulu epitaxial.
2. Ke Doped (N-Type):Hoʻohana mau ʻia ka doping Tellurium (Te) no ka hana ʻana i nā wafers N-type, i kūpono no nā noi e like me nā mea ʻike infrared a me nā uila uila kiʻekiʻe.
3.Ge Doped (P-Type):Hoʻohana ʻia ka Germanium (Ge) doping no ka hana ʻana i nā wafers P-type, e hāʻawi ana i ka mobility puka kiʻekiʻe no nā noi semiconductor holomua.
Nā koho nui:
1. Loaʻa i nā anawaena 2-inch, 3-inch, a me 4-inch. Hāʻawi kēia mau wafers i nā pono ʻenehana like ʻole, mai ka noiʻi a me ka hoʻomohala ʻana i ka hana nui.
2.Pcise anawaena tolerances e hōʻoia i ke kūlike ma waena o nā pūʻulu, me ka anawaena o 50.8±0.3mm (no 2-iniha wafers) a me 76.2±0.3mm (no 3-iniha wafers).
Mana Mānoanoa:
1. Loaʻa nā wafers me ka mānoanoa o 500± 5μm no ka hana maikaʻi loa i nā noi like ʻole.
2. Hoʻoponopono maikaʻi ʻia nā ana ʻē aʻe e like me TTV (Total Thickness Variation), BOW, a me Warp no ka hōʻoia ʻana i ke kūlike kiʻekiʻe a me ka maikaʻi.
ʻAno o ka ʻili:
1. Hele mai nā wafers me kahi ʻili i hoʻoliʻi ʻia / etched no ka hoʻomaikaʻi ʻana i ka hana optical a me ka uila.
2. He kūpono kēia mauʻili no ka uluʻana o ka epitaxial, e hāʻawi ana i kahi kumu maʻemaʻe no ka hana houʻana i nā mea hana kiʻekiʻe.
Epi-Makaukau:
1. He epi-mākaukau nā wafers InSb, ʻo ia hoʻi, ua mālama mua ʻia lākou no nā kaʻina hana epitaxial deposition. ʻO kēia ka mea kūpono iā lākou no nā noi i ka hana semiconductor kahi e pono ai e ulu nā papa epitaxial ma luna o ka wafer.
Nā noi
1. Nā mea ʻike maka ʻulaʻula:Hoʻohana mau ʻia nā wafers InSb i ka ʻike ʻana i ka infrared (IR), ʻoi aku ka nui ma ka laulā waena-longth infrared (MWIR). Pono kēia mau wafers no ka ʻike pō, ke kiʻi wela, a me nā noi spectroscopy infrared.
2. High-Speed Electronics:Ma muli o ko lākou mobility electron kiʻekiʻe, hoʻohana ʻia nā wafers InSb i nā mea uila uila kiʻekiʻe e like me nā transistors kiʻekiʻe-frequency, quantum well device, a me high-electron mobility transistors (HEMTs).
3. Nā Mea Hana Pono Quantum:ʻO ka ʻāpana haiki a me ka neʻe ʻana o ka electron maikaʻi loa e kūpono i nā wafers InSb no ka hoʻohana ʻana i nā mea pono quantum well. ʻO kēia mau mea hana nā mea nui i nā lasers, detectors, a me nā ʻōnaehana optoelectronic ʻē aʻe.
4. Nā mea hana Spintronic:Ke ʻimi ʻia nei ʻo InSb i nā noi spintronic, kahi e hoʻohana ʻia ai ka spin electron no ka hoʻoponopono ʻike. ʻO ka hoʻohui ʻana o ka mea haʻahaʻa spin-orbit i kūpono no kēia mau mea hana kiʻekiʻe.
5. Terahertz (THz) Nā mea hoʻohana hoʻomālamalama:Hoʻohana ʻia nā mea hana InSb i nā noi radiation THz, me ka noiʻi ʻepekema, kiʻi kiʻi, a me ke ʻano o nā mea. Hāʻawi lākou i nā ʻenehana holomua e like me THz spectroscopy a me THz imaging system.
6. Nā meahana Thermoelectric:ʻO nā waiwai kūʻokoʻa o InSb e lilo ia i mea nani no nā noi thermoelectric, kahi hiki ke hoʻohana ʻia e hoʻololi i ka wela i ka uila me ka maikaʻi, ʻoi aku hoʻi i nā noi niche e like me ka ʻenehana ākea a i ʻole ka hana mana i nā kaiapuni.
Nā Kūlana Huahana
| ʻĀpana | 2-iniha | 3-iniha | 4-iniha |
| Anawaena | 50.8±0.3mm | 76.2±0.3mm | - |
| mānoanoa | 500±5μm | 650±5μm | - |
| Ili | Hoʻomaʻamaʻa ʻia | Hoʻomaʻamaʻa ʻia | Hoʻomaʻamaʻa ʻia |
| ʻAno Doping | ʻAʻole i hoʻopaʻa ʻia, Te-doped (N), Ge-doped (P) | ʻAʻole i hoʻopaʻa ʻia, Te-doped (N), Ge-doped (P) | ʻAʻole i hoʻopaʻa ʻia, Te-doped (N), Ge-doped (P) |
| Kūlana | (100) | (100) | (100) |
| Pūʻolo | hoʻokahi | hoʻokahi | hoʻokahi |
| Epi-Makaukau | ʻAe | ʻAe | ʻAe |
Nā ʻāpana Uila no Te Doped (N-Type):
- Ka neʻe ʻana: 2000-5000 knm²/V·s
- Kū'ē: (1-1000) Ω·cm
- EPD: ≤2000 hemahema/cm²
Nā ʻāpana uila no Ge Doped (P-Type):
- Ka neʻe ʻana: 4000-8000 knm²/V·s
- Kū'ē: (0.5-5) Ω·cm
- EPD: ≤2000 hemahema/cm²
Ka hopena
ʻO nā wafers Indium Antimonide (InSb) he mea koʻikoʻi ia no ka nui o nā noi hana kiʻekiʻe ma nā kahua o ka uila, optoelectronics, a me nā ʻenehana infrared. Me kā lākou mobility electron maikaʻi loa, ka hoʻohui ʻana i ka spin-orbit haʻahaʻa, a me nā koho doping like ʻole (Te no ke ʻano N-type, Ge no ka P-type), kūpono nā wafers InSb no ka hoʻohana ʻana i nā mea e like me nā mea ʻike infrared, nā transistors kiʻekiʻe, nā lako quantum well, a me nā mea spintronic.
Loaʻa nā wafers i nā nui like ʻole (2-inihi, 3-inihi, a me 4-inihi), me ka mana mānoanoa pololei a me nā papa epi-mākaukau, e hōʻoia ana e hoʻokō lākou i nā koi ikaika o ka hana semiconductor hou. He kūpono kēia mau wafers no nā noi ma nā kula e like me ka ʻike IR, nā uila uila kiʻekiʻe, a me ka radiation THz, e hiki ai i nā ʻenehana holomua i ka noiʻi, ʻoihana, a me ka pale.
Kiʻi kikoʻī
