Nā wafer Indium Antimonide (InSb) ʻano N ʻano P ʻano Epi mākaukau ʻole ʻia Te doped a i ʻole Ge doped 2 ʻīniha 3 ʻīniha 4 ʻīniha ka mānoanoa
Nā hiʻohiʻona
Nā Koho Doping:
1. Hoʻopau ʻia:ʻAʻohe o kēia mau wafers i nā mea hoʻohui doping, e kūpono ana iā lākou no nā noi kūikawā e like me ka ulu ʻana o ka epitaxial.
2. Hoʻohui ʻia ʻo Te (ʻAno-N):Hoʻohana pinepine ʻia ka hoʻohui ʻana o Tellurium (Te) e hana i nā wafers ʻano-N, he kūpono ia no nā noi e like me nā mea ʻike infrared a me nā mea uila wikiwiki.
3.Ge Doped (ʻAno-P):Hoʻohana ʻia ka doping Germanium (Ge) e hana i nā wafers ʻano-P, e hāʻawi ana i ka neʻe ʻana o nā lua kiʻekiʻe no nā noi semiconductor holomua.
Nā Koho Nui:
1. Loaʻa i nā anawaena 2-'īniha, 3-'īniha, a me 4-'īniha. Hoʻokō kēia mau wafers i nā pono ʻenehana like ʻole, mai ka noiʻi a me ka hoʻomohala ʻana a hiki i ka hana nui ʻana.
2. Hōʻoia nā hoʻomanawanui anawaena pololei i ke kūlike ma nā ʻāpana, me nā anawaena o 50.8 ± 0.3mm (no nā wafers 2-'īniha) a me 76.2 ± 0.3mm (no nā wafers 3-'īniha).
Mana Mānoanoa:
1. Loaʻa nā wafers me ka mānoanoa o 500 ± 5μm no ka hana kūpono ma nā ʻano hana like ʻole.
2. Hoʻomalu pono ʻia nā ana ʻē aʻe e like me TTV (Total Thickness Variation), BOW, a me Warp e hōʻoia i ka like like a me ka maikaʻi.
ʻAno o ka ʻili:
1. Hele mai nā wafers me kahi ʻili i wili ʻia/ʻoki ʻia no ka hana optical a me ka uila i hoʻomaikaʻi ʻia.
2. He kūpono kēia mau ʻili no ka ulu ʻana o ka epitaxial, e hāʻawi ana i kahi kumu laumania no ka hana hou ʻana i nā polokalamu hana kiʻekiʻe.
Mākaukau ʻo Epi:
1. Ua mākaukau nā wafers InSb no ka epi, ʻo ia hoʻi ua mālama mua ʻia lākou no nā kaʻina hana epitaxial deposition. ʻO kēia ka mea kūpono iā lākou no nā noi i ka hana semiconductor kahi e pono ai ke ulu ʻia nā papa epitaxial ma luna o ka wafer.
Nā noi
1. Nā mea ʻike infrared:Hoʻohana pinepine ʻia nā wafers InSb i ka ʻike ʻana i ka infrared (IR), ʻoi aku hoʻi ma ka pae infrared mid-wavelength (MWIR). He mea nui kēia mau wafers no ka ʻike pō, ke kiʻi wela, a me nā noi spectroscopy infrared.
2. Nā Uila Holo Kiʻekiʻe:Ma muli o ko lākou neʻe ʻana i ka electron kiʻekiʻe, hoʻohana ʻia nā wafers InSb i nā mea uila wikiwiki e like me nā transistors alapine kiʻekiʻe, nā mea hana lua quantum, a me nā transistors neʻe ʻana i ka electron kiʻekiʻe (HEMTs).
3. Nā Mea Hana Luawai Quantum:ʻO ka bandgap haiki a me ka neʻe ʻana o ka electron maikaʻi loa e hana i nā wafers InSb i kūpono no ka hoʻohana ʻana i nā mea hana lua quantum. He mau ʻāpana koʻikoʻi kēia mau mea hana i nā lasers, nā mea ʻike, a me nā ʻōnaehana optoelectronic ʻē aʻe.
4. Nā Mea Hana Spintronic:Ke noiʻi ʻia nei ʻo InSb i nā noi spintronic, kahi e hoʻohana ʻia ai ka milo electron no ka hana ʻike. ʻO ka hoʻopili spin-orbit haʻahaʻa o ka mea e kūpono ia no kēia mau mea hana kiʻekiʻe.
5. Nā noi hoʻohana ʻana i ka radiation Terahertz (THz):Hoʻohana ʻia nā mea hana e pili ana i ka InSb i nā noi radiation THz, me ka noiʻi ʻepekema, ke kiʻi ʻana, a me ke ʻano o nā mea. Hiki iā lākou ke hoʻohana i nā ʻenehana holomua e like me ka spectroscopy THz a me nā ʻōnaehana kiʻi THz.
6. Nā Mea Hana Thermoelectric:ʻO nā waiwai kūikawā o InSb e lilo ia i mea hoihoi no nā noi thermoelectric, kahi hiki ke hoʻohana ʻia e hoʻololi i ka wela i ka uila me ka maikaʻi, ʻoi aku hoʻi i nā noi niche e like me ka ʻenehana lewa a i ʻole ka hana mana ma nā wahi koʻikoʻi.
Nā Palena Huahana
| Palena | 2-'īniha | 3-'īniha | 4-'īniha |
| Anawaena | 50.8±0.3mm | 76.2±0.3mm | - |
| Mānoanoa | 500±5μm | 650±5μm | - |
| ʻIli | Hoʻopili ʻia/ʻoki ʻia | Hoʻopili ʻia/ʻoki ʻia | Hoʻopili ʻia/ʻoki ʻia |
| ʻAno Doping | Hoʻopau ʻia, Hoʻopau ʻia me ka Te (N), Hoʻopau ʻia me ka Ge (P) | Hoʻopau ʻia, Hoʻopau ʻia me ka Te (N), Hoʻopau ʻia me ka Ge (P) | Hoʻopau ʻia, Hoʻopau ʻia me ka Te (N), Hoʻopau ʻia me ka Ge (P) |
| Hoʻonohonoho | (100) | (100) | (100) |
| Pūʻolo | Hoʻokahi | Hoʻokahi | Hoʻokahi |
| Mākaukau ʻo Epi | ʻAe | ʻAe | ʻAe |
Nā Palena Uila no Te Doped (N-Type):
- Ka neʻe ʻana: 2000-5000 cm²/V·s
- Ke kū'ē ʻana: (1-1000) Ω·cm
- EPD (Ka nui o ke kīnā): ≤2000 kīnā/cm²
Nā Palena Uila no Ge Doped (P-Type):
- Ka neʻe ʻana: 4000-8000 cm²/V·s
- Ke kū'ē ʻana: (0.5-5) Ω·cm
- EPD (Ka nui o ke kīnā): ≤2000 kīnā/cm²
Hopena
He mea nui nā wafers Indium Antimonide (InSb) no nā ʻano hana kiʻekiʻe like ʻole ma nā kahua o nā mea uila, optoelectronics, a me nā ʻenehana infrared. Me ko lākou neʻe ʻana i ka electron maikaʻi loa, ka hoʻopili ʻana o ka spin-orbit haʻahaʻa, a me nā koho doping like ʻole (Te no ke ʻano N, Ge no ke ʻano P), kūpono nā wafers InSb no ka hoʻohana ʻana i nā mea e like me nā mea ʻike infrared, nā transistors wikiwiki kiʻekiʻe, nā mea hana lua quantum, a me nā mea spintronic.
Loaʻa nā wafers i nā nui like ʻole (2-ʻīniha, 3-ʻīniha, a me 4-ʻīniha), me ka kaohi mānoanoa pololei a me nā ʻili epi-ready, e hōʻoiaʻiʻo ana e hoʻokō lākou i nā koi koʻikoʻi o ka hana semiconductor hou. He kūpono kēia mau wafers no nā noi ma nā kahua e like me ka ʻike ʻana o IR, nā mea uila wikiwiki, a me ka radiation THz, e hiki ai i nā ʻenehana holomua i ka noiʻi, ka ʻoihana, a me ka pale kaua.
Kiʻikuhi kikoʻī
