InSb wafer 2 iniha 3 iniha undoped Ntype P type orientation 111 100 no ka Infrared Detectors
Nā hiʻohiʻona
Nā Koho Doping:
1. Hoʻopau ʻole ʻia:ʻAʻole manuahi kēia mau wafers mai nā mea hana doping a hoʻohana mua ʻia no nā noi kūikawā e like me ka ulu ʻana o ka epitaxial, kahi e hana ai ka wafer ma ke ʻano he substrate maʻemaʻe.
2.N-Type (Te Doped):Hoʻohana ʻia ka doping Tellurium (Te) no ka hana ʻana i nā wafers N-type, e hāʻawi ana i ka neʻe electron kiʻekiʻe a hoʻolilo iā lākou i kūpono no nā mea ʻike infrared, nā uila uila kiʻekiʻe, a me nā noi ʻē aʻe e pono ai ke kahe electron pono.
3. ʻAno-P (Ge Doped):Hoʻohana ʻia ka Germanium (Ge) doping no ka hana ʻana i nā wafers P-type, e hāʻawi ana i ka neʻe ʻana o ka lua kiʻekiʻe a hāʻawi i ka hana maikaʻi loa no nā mea ʻike infrared a me nā photodetectors.
Nā koho nui:
1. Loaʻa nā wafers i nā anawaena 2-inch a me 3-inch. Mālama kēia i ka launa pū me nā kaʻina hana semiconductor a me nā mea hana.
2. He 50.8 ± 0.3mm ka anawaena ka 2-inch wafer, aʻo ka 3-inch wafer he 76.2 ± 0.3mm anawaena.
Kūlana:
1. Loaʻa nā wafers me nā orientations o 100 a me 111. ʻO ka 100 orientation he mea kūpono ia no nā mea uila kiʻekiʻe a me nā meaʻike infrared, aʻo ka 111 orientation e hoʻohana pinepineʻia no nā mea e koi ana i nā mea uila a iʻole nā mea kiko'ī.
ʻAno o ka ʻili:
1. Hele mai kēia mau wafers me nā ʻaoʻao i poni ʻia/i kālai ʻia no ka maikaʻi maikaʻi loa, e hiki ai i ka hana maikaʻi loa i nā noi e koi ana i nā hiʻohiʻona optical a i ʻole uila.
2. ʻO ka hoʻomākaukau ʻana o ka ʻili e hōʻoia i ka haʻahaʻa haʻahaʻa haʻahaʻa, e hoʻolilo i kēia mau wafers i mea kūpono no nā noi ʻike infrared kahi koʻikoʻi ke kūlike o ka hana.
Epi-Makaukau:
1. He epi-mākaukau kēia mau wafers, kūpono ia no nā noi e pili ana i ka ulu ʻana o ka epitaxial kahi e waiho ʻia ai nā papa hou o nā mea ma ka wafer no ka hana semiconductor kiʻekiʻe a i ʻole optoelectronic.
Nā noi
1. Nā mea ʻike maka ʻulaʻula:Hoʻohana nui ʻia nā wafers InSb i ka hana ʻana i nā mea ʻike infrared, ʻoi aku hoʻi i nā pae waena-wavelongth infrared (MWIR). Pono lākou no nā ʻōnaehana ʻike pō, kiʻi wela, a me nā noi koa.
2. Pūnaehana Kiʻi Infrared:Hiki i ka ʻike kiʻekiʻe o nā wafers InSb ke kiʻi kiʻi infrared pololei ma nā ʻāpana like ʻole, me ka palekana, ka nānā ʻana, a me ka noiʻi ʻepekema.
3.High-Speed Electronics:Ma muli o kā lākou mobility electron kiʻekiʻe, hoʻohana ʻia kēia mau wafers i nā mea uila kiʻekiʻe e like me nā transistors kiʻekiʻe a me nā mea optoelectronic.
4. Nā Mea Hana Pono Quantum:He kūpono nā wafers InSb no nā noi quantum well i nā lasers, detectors, a me nā ʻōnaehana optoelectronic ʻē aʻe.
Nā Kūlana Huahana
| ʻĀpana | 2-iniha | 3-iniha |
| Anawaena | 50.8±0.3mm | 76.2±0.3mm |
| mānoanoa | 500±5μm | 650±5μm |
| Ili | Hoʻomaʻamaʻa ʻia | Hoʻomaʻamaʻa ʻia |
| ʻAno Doping | ʻAʻole i hoʻopaʻa ʻia, Te-doped (N), Ge-doped (P) | ʻAʻole i hoʻopaʻa ʻia, Te-doped (N), Ge-doped (P) |
| Kūlana | 100, 111 | 100, 111 |
| Pūʻolo | hoʻokahi | hoʻokahi |
| Epi-Makaukau | ʻAe | ʻAe |
Nā ʻāpana Uila no Te Doped (N-Type):
- Ka neʻe ʻana: 2000-5000 knm²/V·s
- Kū'ē: (1-1000) Ω·cm
- EPD: ≤2000 hemahema/cm²
Nā ʻāpana uila no Ge Doped (P-Type):
- Ka neʻe ʻana: 4000-8000 knm²/V·s
- Kū'ē: (0.5-5) Ω·cm
EPD: ≤2000 hemahema/cm²
N&A (Nīnau pinepine)
Q1: He aha ke ʻano doping kūpono no nā noi ʻike infrared?
A1:Ka-doped (N-type)ʻO nā wafers ka mea maʻamau ke koho maikaʻi loa no nā noi ʻike infrared, ʻoiai lākou e hāʻawi ana i ka mobility electron kiʻekiʻe a me ka hana maikaʻi loa i nā mea ʻike infrared mid-longth infrared (MWIR) a me nā ʻōnaehana kiʻi.
Q2: Hiki iaʻu ke hoʻohana i kēia mau wafers no nā noi uila kiʻekiʻe?
A2: ʻAe, nā wafers InSb, ʻoi aku ka poʻe meN-type dopinga me ka100 kuhikuhi, ua kūpono maikaʻi no nā uila uila kiʻekiʻe e like me nā transistors, quantum well device, a me nā ʻāpana optoelectronic ma muli o kā lākou mobility electron kiʻekiʻe.
Q3: He aha nā ʻokoʻa ma waena o nā kuhikuhina 100 a me 111 no nā wafers InSb?
A3: Ka100Hoʻohana maʻamau ka orientation no nā mea e koi ana i ka hana uila uila kiʻekiʻe, ʻoiai ka111Hoʻohana pinepine ʻia ka orientation no nā noi kikoʻī e koi ana i nā hiʻohiʻona uila a i ʻole nā hiʻohiʻona optical, me kekahi mau mea optoelectronic a me nā mea ʻike.
Q4: He aha ke koʻikoʻi o ka hiʻohiʻona Epi-Ready no nā wafers InSb?
A4: KaEpi-MakaukauʻO ka hiʻohiʻona ʻo ia hoʻi ua mālama mua ʻia ka wafer no nā kaʻina hana epitaxial deposition. He mea koʻikoʻi kēia no nā noi e koi ana i ka ulu ʻana o nā papa o nā mea ma luna o ka wafer, e like me ka hana ʻana i nā mea semiconductor kiʻekiʻe a i ʻole optoelectronic.
Q5: He aha nā mea hoʻohana maʻamau o nā wafers InSb i ke kahua ʻenehana infrared?
A5: Hoʻohana nui ʻia nā wafers InSb i ka ʻike infrared, ke kiʻi wela, nā ʻōnaehana ʻike pō, a me nā ʻenehana ʻike infrared ʻē aʻe. ʻO ko lākou naʻau kiʻekiʻe a me ka leo haʻahaʻa e kūpono iā lākouinfrared lōʻihi waena (MWIR)nā mea ʻike maka.
Q6: Pehea e pili ai ka mānoanoa o ka wafer i kāna hana?
A6: He mea koʻikoʻi ka mānoanoa o ka wafer i kona kūpaʻa mechanical a me nā ʻano uila. Hoʻohana pinepine ʻia nā wafers thinner i nā noi ʻoi aku ka maʻalahi kahi e koi ʻia ai ka mana pololei o nā waiwai waiwai, ʻoiai nā wafers mānoanoa e hoʻonui i ka lōʻihi no kekahi mau noi ʻoihana.
Q7: Pehea wau e koho ai i ka nui wafer kūpono no kaʻu noi?
A7: ʻO ka nui wafer kūpono e pili ana i ka mea hana a i ʻole ka ʻōnaehana i hoʻolālā ʻia. Hoʻohana pinepine ʻia nā wafers liʻiliʻi (2-ʻīniha) no ka noiʻi ʻana a me nā noi liʻiliʻi, ʻoiai ʻo nā wafers nui (3-inihi) ke hoʻohana pinepine ʻia no ka hana nui a me nā mea nui e koi ana i nā mea ʻoi aku ka nui.
Ka hopena
InSb wafers in2-inihaa3-inihanui, mewehe ʻia, N-ʻano, aʻAno-Pnā ʻano like ʻole, waiwai nui i nā noi semiconductor a me optoelectronic, ʻoi loa i nā ʻōnaehana ʻike infrared. ʻO ka100a111Hāʻawi nā orientations i ka maʻalahi no nā pono ʻenehana like ʻole, mai nā uila uila kiʻekiʻe a i nā ʻōnaehana kiʻi infrared. Me kā lākou mobility electron ʻokoʻa, haʻahaʻa haʻahaʻa, a me ka maikaʻi o ka ʻili, kūpono kēia mau wafersnā mea ʻike infrared lōʻihi waenaa me nā polokalamu hana kiʻekiʻe ʻē aʻe.
Kiʻi kikoʻī
