LiTaO3 Lithium Tantalate Ingots me Fe / Mg Doping i hoʻopilikino ʻia 4inch 6inch 8inch no ka ʻike ʻenehana.

LiTaO3 Lithium Tantalate Ingots me Fe/Mg Doping Hoʻopilikino ʻia 4inch 6inch 8inch no ka Industrial Sensing Featured Image

ʻO ka wehewehe pōkole:

ʻO LiTaO3 Ingots (Lithium Tantalate Ingots), ma ke ʻano he kumu kumu no ke kolu o nā hanauna ākea-bandgap semiconductor a me optoelectronics, e hoʻohana i kā lākou kiʻekiʻe Curie kiʻekiʻe (607).°C), ka laulā ākea ākea (400–5,200 nm), ka coefficient hoʻohui electromechanical maikaʻi loa (Kt²>15%), a me ka poho dielectric haʻahaʻa (tanδ <2%) e hoʻololi i nā kamaʻilio 5G, quantum computing, a me photonic integration. Ma o nā ʻenehana hana holomua e like me ka lawe ʻana i ka mahu kino (PVT) a me ka hoʻoheheʻe ʻana o ke kino (CVD), hāʻawi mākou i nā ʻoki X/Y/Z, 42°Y-cut, a me nā poled periodically (PPLT) i nā kikoʻī 3-8-inihi, e hōʻike ana i ka micropipe density <0.1 cm⁻² a me ka dislocation density <500 cm⁻². ʻO kā mākou mau lawelawe e komo ana i ka Fe/Mg doping, nā alakaʻi nalu hoʻololi proton, a me ka hoʻohuihui heterogeneous-based (POI), e ʻōlelo ana i nā kānana optical kiʻekiʻe, nā kumu kukui quantum, a me nā mea ʻike infrared. Hoʻokumu kēia mea i nā holomua i ka miniaturization, ka hana kiʻekiʻe-frequency, a me ke kūpaʻa wela, ka wikiwiki o ka hoʻololi ʻana i ka home a me ka holomua ʻenehana.

E hoʻouna i ka leka uila iā mākou

Nā hiʻohiʻona

Nā palena ʻenehana

Hōʻike	Kuʻuna	Kiekie Kiekie
Nā mea waiwai	LiTaO3(LT)/ LiNbO3 wafers	LiTaO3(LT)/LiNbO3 wafers
Kūlana	X-112°Y,36°Y,42°Y±0.5°	X-112°Y,36°Y,42°Y±0.5°
Kaulike	30″	10''
Kaulike	10′	5'
ili maikaʻi	40/20	20/10
Hoʻokaʻawale ʻia ʻo Wavefront	λ/4@632nm	λ/8@632nm
Palahalaha o ka Ili	λ/4@632nm	λ/8@632nm
Mākaʻikaʻi Aperture	>90%	>90%
Chamfer	<0.2×45°	<0.2×45°
Mānoanoa/Anawaena hoʻomanawanui	±0.1 mm	±0.1 mm
Ka nui loa	dia150×50mm	dia150×50mm

Nā lawelawe XKH

1. Mea Hana Ingot Nuiʻ

Ka nui a me ka ʻoki ʻana: 3–8-ʻīniha ʻokiʻoki me X/Y/Z-ʻoki, 42°Y-ʻoki, a me nā ʻoki kihi maʻamau (± 0.01° hoʻomanawanui).

Hoʻoponopono Doping: Fe/Mg co-doping ma o ke ʻano Czochralski (ka pae hoʻopaʻa ʻana 10¹⁶–10¹⁹ cm⁻³) no ka hoʻopaʻa ʻana i ka pale photorefractive a me ke kūpaʻa wela.

2. Nā ʻenehana kaʻina hana kiʻekiʻeʻ

Hoʻohui Heterogeneous: Silicon-based LiTaO3 composite wafers (POI) me ka mānoanoa (300–600 nm) a me ka thermal conductivity a hiki i 8.78 W/m·K no nā kānana SAW kiʻekiʻe.

ʻO ka Waveguide Fabrication: Proton exchange (PE) a me ka huli ʻana i ka proton exchange (RPE), e loaʻa ana i nā alakaʻi nalu submicron (Δn>0.7) no nā modulators electro-optic kiʻekiʻe (bandwidth>40 GHz).

3. Nā ʻōnaehana hoʻokele maikaʻi

ʻO ka hoʻāʻo ʻana i ka hopena: Raman spectroscopy (polytype verification), XRD (crystallinity), AFM (surface morphology), a me ka hoʻāʻo like ʻana o ka optical (Δn <5×10⁻⁵).

4. Kākoʻo Kākoʻo Hoʻolako Global

Hiki i ka hana: ʻO ka hoʻopuka mahina> 5,000 ingots (8-inch: 70%), e kākoʻo ana i ka lawe ʻana i ka pilikia 48-hola.

Pūnaehana Logistics: Hoʻopili ʻia ma ʻEulopa, ʻAmelika ʻĀkau, a me ʻAsia-Pākīpika ma o ka ukana ea/kai me ka hoʻopaʻa ʻana i ka wela.

5. Hoʻomohala hui ʻenehana

Nā Labs R&D Hui: E hui pū me nā paepae hoʻohui kiʻi kiʻi (e laʻa, SiO2 haʻahaʻa-loss layer bonding).

Hōʻuluʻulu manaʻo

LiTaO3 Ingots lawelawe ma ke ʻano he mea hoʻolālā e hoʻololi hou ana i nā optoelectronics a me nā ʻenehana quantum. Ma o nā hana hou i ka ulu ʻana o ke aniani (eg, PVT), ka hoʻēmi ʻana i nā hemahema, a me ka hoʻohui heterogeneous (eg, POI), hāʻawi mākou i ka hilinaʻi kiʻekiʻe, nā hopena kumu kūʻai no nā kamaʻilio 5G/6G, quantum computing, a me IoT ʻoihana. ʻO ka hoʻokō ʻana o XKH i ka hoʻonui ʻana i ka hoʻohaʻahaʻa defect ingot a me ka hoʻonui ʻana i ka hana 8-inch e hōʻoia i nā mea kūʻai aku e alakaʻi i nā kaulahao lako honua, e hoʻokele ana i ka wā e hiki mai ana o nā kaiaola semiconductor wide-bandgap.