ʻO ke ʻano N-SiC ma nā Si Composite Substrates Dia6inch
| 等级Papa | U 级 | P级 | D级 |
| Papa BPD Haʻahaʻa | Papa Hana | Papa Dummy | |
| 直径Anawaena | 150.0 mm±0.25mm | ||
| 厚度Mānoanoa | 500 μm±25μm | ||
| 晶片方向Hoʻonohonoho Wafer | ʻO ke axis ma waho: 4.0° i ka <11-20> ±0.5° no 4H-N Ma ke axis: <0001>±0.5° no 4H-SI | ||
| 主定位边方向Pālahalaha mua | {10-10}±5.0° | ||
| 主定位边长度Ka Lōʻihi Palahalaha Mua | 47.5 mm±2.5 mm | ||
| 边缘Hoʻokaʻawale ʻia ka lihi | 3 mm | ||
| 总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp | ≤15μm /≤40μm /≤60μm | ||
| 微管密度和基面位错MPD&BPD | MPD≤1 kenimika-2 | MPD≤5 kenimika-2 | MPD≤15 kenimika-2 |
| BPD≤1000cm-2 | |||
| 电阻率Ke kū'ē ʻana | ≥1E5 Ω·cm | ||
| 表面粗糙度ʻOʻoleʻa | Polani Ra≤1 nm | ||
| CMP Ra≤0.5 nm | |||
| 裂纹(强光灯观测) # | ʻAʻohe | Ka lōʻihi o ka huina ≤10mm, ka lōʻihi hoʻokahi ≤2mm | |
| Nā māwae e ka mālamalama ikaika loa | |||
| 六方空洞（强光灯观测）* | ʻĀpana hōʻuluʻulu ≤1% | ʻĀpana hōʻuluʻulu ≤5% | |
| Nā Papa Hex e ke kukui ikaika kiʻekiʻe | |||
| 多型(强光灯观测)* | ʻAʻohe | ʻĀpana hōʻuluʻulu ≤5% | |
| Nā wahi Polytype e ke kukui ikaika kiʻekiʻe | |||
| 划痕(强光灯观测)*& | 3 mau ʻōpala i ka 1 × ke anawaena wafer | 5 mau ʻōpala i ka 1 × ke anawaena wafer | |
| Nā ʻōpala e ka mālamalama ikaika loa | ka lōʻihi huina | ka lōʻihi huina | |
| 崩边# ʻĀpana lihi | ʻAʻohe | 5 i ʻae ʻia, ≤1 mm kēlā me kēia | |
| 表面污染物（强光灯观测） | ʻAʻohe | ||
| Ka haumia ʻana e ka mālamalama ikaika kiʻekiʻe | |||
Kiʻikuhi kikoʻī
