N-Ano SiC ma Si Composite Substrates Dia6 iniha

等级Papa

U 级

P级

D级

Haʻahaʻa BPD Papa

Papa Hana Hana

Papa Dummy

直径Anawaena

150.0 mm±0.25mm

厚度mānoanoa

500 μm±25μm

晶片方向Kūlana Wafer

ʻAi aku: 4.0° i < 11-20 > ±0.5° no 4H-N Ma ke axis: <0001>±0.5° no 4H-SI

主定位边方向Papa Papahana

{10-10}±5.0°

主定位边长度Ka lōʻihi pālahalaha

47.5 mm±2.5 mm

边缘Hoʻokuʻu lihi

3 mm

总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp

≤15μm /≤40μm /≤60μm

微管密度和基面位错MPD&BPD

MPD≤1 knm-2

MPD≤5 cm-2

MPD≤15 knm-2

BPD≤1000cm-2

电阻率Kū'ē

≥1E5 Ω·cm

表面粗糙度ʻoʻoleʻa

Polani Ra≤1 nm

CMP Ra≤0.5 nm

裂纹(强光灯观测) #

ʻAʻohe

ʻO ka lōʻihi kumulative ≤10mm, hoʻokahi lōʻihi≤2mm

Nā māwae e ke kukui ikaika kiʻekiʻe

六方空洞（强光灯观测）*

ʻĀpana hui ≤1%

ʻĀpana hui ≤5%

Nā Papa Hex ma ke kukui ikaika kiʻekiʻe

多型(强光灯观测)*

ʻAʻohe

ʻĀpana huila≤5%

Nā ʻāpana Polytype ma ke kukui ikaika kiʻekiʻe

划痕(强光灯观测)*&

3 mau ʻōpala i ka 1×wafer anawaena

5 mau ʻōpala i ka 1×wafer anawaena

ʻAkaʻi ʻia e ke kukui ikaika kiʻekiʻe

lōʻihi huila

lōʻihi huila

崩边# Kipi lihi

ʻAʻohe

5 ʻae ʻia, ≤1 mm kēlā me kēia

表面污染物（强光灯观测）

ʻAʻohe

Hoʻohaumia ʻia e ke kukui ikaika kiʻekiʻe