ʻO ka substrate SiC ʻano P SiC wafer Dia2inch huahana hou

Hoʻohana pinepine ʻia nā substrates silicon carbide ʻano-P e hana i nā mea mana, e like me nā transistors Insulate-Gate Bipolar (IGBTs).

ʻO IGBT= MOSFET+BJT, he kuapo hoʻā-pau. MOSFET=IGFET(metal oxide semiconductor field effect tube, a i ʻole insulated gate type field effect transistor). ʻO BJT(Bipolar Junction Transistor, i ʻike ʻia hoʻi ʻo ka transistor), ʻo ke ʻano bipolar he ʻelua ʻano o nā mea lawe electron a me nā lua i komo i ke kaʻina hana conduction ma ka hana, ma ke ʻano laulā aia ka PN junction i komo i ka conduction.

ʻO ka wafer silicon carbide (SiC) ʻano-p 2-'īniha ma ka polytype 4H a i ʻole 6H. Loaʻa iā ia nā waiwai like me nā wafer silicon carbide (SiC) ʻano-n, e like me ke kūpaʻa wela kiʻekiʻe, ka conductivity thermal kiʻekiʻe, a me ka conductivity uila kiʻekiʻe. Hoʻohana pinepine ʻia nā substrates SiC ʻano-p i ka hana ʻana o nā mea mana, ʻoi aku hoʻi no ka hana ʻana o nā transistors bipolar insulated-gate (IGBTs). ʻO ka hoʻolālā ʻana o IGBTs e pili pinepine i nā PN junctions, kahi e pono ai ka SiC ʻano-p no ka kaohi ʻana i ke ʻano o ka mea hana.