P-type SiC substrate SiC wafer Dia2inch huahana hou

ʻO ka wehewehe pōkole:

2 ʻīniha P-Type Silicon Carbide (SiC) Wafer ma 4H a i ʻole 6H polytype. Loaʻa iā ia nā waiwai like me ka N-type Silicon Carbide (SiC) wafer, e like me ke kūpaʻa wela kiʻekiʻe, ka conductivity thermal kiʻekiʻe, ka conductivity uila kiʻekiʻe, a me nā mea ʻē aʻe. ʻO nā Transistors Bipolar Gate (IGBT). Hoʻokomo pinepine ka hoʻolālā o IGBT i nā junctions PN, kahi e hiki ai i ka P-type SiC ke kūpono no ka hoʻomalu ʻana i ka ʻano o nā mea hana.

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Huahana Huahana

Hoʻohana mau ʻia nā substrates silicon carbide P-type e hana i nā mea mana, e like me Insulate-Gate Bipolar transistors (IGBTs).

IGBT= MOSFET+BJT, ʻo ia ka hoʻololi ʻana. MOSFET=IGFET (metal oxide semiconductor field effect tube, a i ʻole transistor hopena kahua ʻano puka insulated). ʻO BJT (Bipolar Junction Transistor, ʻike ʻia hoʻi ʻo ka transistor), ʻo ia hoʻi, ʻelua ʻano o nā mea lawe electron a me nā lua i komo i ke kaʻina hana i ka hana, ma ke ʻano maʻamau, aia ka hui PN i ka conduction.

Aia ka 2-inihi p-type silicon carbide (SiC) wafer ma 4H a i ʻole 6H polytype. Loaʻa iā ia nā waiwai like me ka n-type silicon carbide (SiC) wafers, e like me ke kūpaʻa wela kiʻekiʻe, ka hoʻoili wela kiʻekiʻe, a me ka conductivity uila kiʻekiʻe. Hoʻohana maʻamau ʻia nā substrate SiC p-type i ka hana ʻana i nā mea mana, ʻoi loa no ka hana ʻana i nā transistors bipolar insulated-gate (IGBTs). ʻO ka hoʻolālā ʻana o nā IGBT maʻamau e pili ana i nā junctions PN, kahi i ʻoi aku ka maikaʻi o ka p-type SiC no ka mālama ʻana i ke ʻano o ka hāmeʻa.