Nā huahana
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ʻO ka umu hoʻoulu ʻana o SiC Ingot no nā ʻano ʻano TSSG/LPE ʻĀpana Nui
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Infrared Picosecond Dual-Platform Laser Cutting Lako no ka Optical Glass/Quartz/Sapphire Processing
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Pohaku pōhaku waihoʻoluʻu Synthetic Sapphire keʻokeʻo no nā mea nani e ʻoki ana i ka nui
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Hāʻawi lima lima ʻo SiC no ka lawe ʻana i ka wafer
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4inihi 6inihi 8 ʻīniha SiC Crystal Growth Furnace for CVD Process
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6 Inch 4H SEMI Type SiC composite substrate Mānoanoa 500μm TTV≤5μm MOS māka
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Nā ʻāpana Sapphire Optical Windows Sapphire i hoʻopilikino ʻia me ka hoʻoliʻi pololei
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ʻO ka pā/pā pāpaʻi SiC no ka paʻa wafer 4 iniha 6 ʻīniha no ICP
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ʻO ka pukaaniani Sapphire ma ke ʻano maʻamau ka paʻakikī no nā pale kelepona
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12 ʻīniha SiC Substrate N ʻAno Nui Nui Nā noi RF hana kiʻekiʻe
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Kūʻai N Type SiC Seed Substrate Dia153/155mm No nā Electronics Power
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Infrared Nanosecond Laser Drilling lako no Glass Drilling thickness≤20mm