Nā huahana
-
InSb wafer 2 iniha 3 iniha undoped Ntype P type orientation 111 100 no ka Infrared Detectors
-
Wafers Indium Antimonide (InSb) N ʻano P ʻano Epi mākaukau wehe ʻia Te doped a Ge doped 2 ʻīniha 3 ʻīniha 4 ʻīniha ka mānoanoa Indium Antimonide (InSb) wafers
-
2 iniha hoʻokahi wafer cassette wafer pahu pahu mea PP orPC i hoʻohana 'ia i ka wafer coin solutions 1inihi 3inihi 4inihi 5inihi 6inihi 12inihi loa'a.
-
SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C ʻano 2 ʻīniha 3 ʻīniha 4 ʻīniha 6 ʻīniha 8 ʻīniha
-
KY a me EFG Sapphire Method Paipu koʻokoʻo sapphire paipu kiʻekiʻe
-
sapphire ingot 3inihi 4inihi 6inihi Monocrystal CZ KY ke ʻano hiki ke hana ʻia
-
Sapphire optical fiber Al2O3 hoʻokahi aniani aniani alohilohi aniani uwea Optical fiber laina kamaʻilio 25-500um
-
ʻO ka paipu Sapphire ʻikea kiʻekiʻe 1inihi 2inihi 3 ʻīniha maʻamau o ka pahu aniani ka lōʻihi 10-800 mm 99.999% AL2O3 maʻemaʻe kiʻekiʻe.
-
ʻO ke apo sapphire i hana ʻia me nā mea sapphire synthetic ʻO ka paʻakikī Mohs a hiki ke hoʻololi ʻia o 9
-
ʻO ka pahu Sapphire pololei ka hana ʻana i ka paipu aniani Al2O3 ʻaʻahu kūʻokoʻa paʻakikī kiʻekiʻe EFG/KY ʻokoʻa ke anawaena polishing maʻamau
-
2 ʻīniha Sic silikon carbide substrate 6H-N ʻAno 0.33mm 0.43mm ʻaoʻao ʻelua hoʻoliʻi kiʻekiʻe.
-
GaAs kiʻekiʻe-mana epitaxial wafer substrate gallium arsenide wafer mana laser hawewe lōʻihi 905nm no ka laser lapaʻau lapaʻau.