Nā huahana
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2'īniha silicon carbide substrate 6H-N ʻaoʻao pālua i poli ʻia ke anawaena 50.8mm papa hana noiʻi papa hana
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ʻO ke kumu keleawe Kupika keleawe Wafer Cu kristal hoʻokahi 100 110 111 Kuhikuhi SSP DSP maʻemaʻe 99.99%
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ʻO ka substrate keleawe hoʻokahi kristal Cu wafer 5x5x0.5/1mm 10x10x0.5/1mm 20x20x0.5/1mm
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ʻO ka nikela wafer Ni Substrate 5x5x0.5/1mm 10x10x0.5/1mm 20x20x0.5/1mm
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ʻAno cubic kristal hoʻokahi o Ni Substrate/wafer a=3.25A ka nui o 8.91
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Magnesium kristal hoʻokahi Substrate Mg wafer maʻemaʻe 99.99% 5x5x0.5/1mm 10x10x0.5/1mm20x20x0.5/1mm
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Magnesium Hoʻokahi aniani Mg wafer DSP SSP Hoʻonohonoho
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ʻO ka substrate kristal hoʻokahi metala alumini i hoʻopili ʻia a hana ʻia i nā ana no ka hana ʻana i kaapuni hoʻohui ʻia
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ʻO ke kahua alumini Hoʻonohonoho ʻia ke kahua alumini kristal hoʻokahi 111 100 111 5 × 5 × 0.5mm
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ʻO ka Quartz Glass Wafer JGS1 JGS2 BF33 Wafer 8'īniha 12'īniha 725 ± 25 um a i ʻole i hoʻopilikino ʻia
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ʻO ka paipu sapphire CZmethod KY method Ke kū'ē ʻana i ka mahana kiʻekiʻe Al2O3 99.999% sapphire kristal hoʻokahi
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ʻano-p 4H/6H-P 3C-N ʻANO SIC substrate 4 ʻīniha 〈111〉± 0.5°Zero MPD