Sapphire Ingot Growth Equipment Czochralski CZ Method no ka hana ʻana i 2inch-12inch Sapphire Wafers

ʻO ka wehewehe pōkole:

ʻO Sapphire Ingot Growth Equipment (Czochralski Method) he ʻōnaehana ʻokiʻoki i hoʻolālā ʻia no ka ulu ʻana o ka sapphire maʻemaʻe kiʻekiʻe, haʻahaʻa haʻahaʻa. Hiki i ke ʻano Czochralski (CZ) ke hoʻomalu pono i ka wikiwiki huki huki hua (0.5–5 mm/h), ka nui o ka hoʻololi ʻana (5-30 rpm), a me nā ʻanuʻu wela i loko o ka iridium crucible, e hana ana i nā kristal axisymmetric a hiki i 12 iniha (300 mm) ke anawaena. Kākoʻo kēia mea hana i ka mana C/A-plane crystal orientation control, e hiki ai i ka ulu ʻana o ka optical-grade, electronic-grade, a me doped sapphire (eg, Cr³⁺ ruby, Ti³⁺ star sapphire).

Hāʻawi ʻo XKH i nā hopena hopena, me ka hoʻoponopono ʻana i nā mea hana (2-12-inch wafer production), ka hoʻoponopono ʻana i ke kaʻina hana (defect density <100/cm²), a me ka hoʻomaʻamaʻa ʻenehana, me ka loaʻa ʻana o ka mahina o 5,000+ wafers no nā noi e like me nā substrates LED, GaN epitaxy, a me semiconductor packaging.

E hoʻouna i ka leka uila iā mākou

Nā hiʻohiʻona

Kumu Hana

Ke hana nei ke ʻano CZ ma o nā ʻanuʻu aʻe:
1. Hooheheeia Mea Maka: Hooheheeia Al₂O₃ maemae loa (maemae>99.999%) iloko o ka iridium crucible ma 2050–2100°C.
2. Ka Hoʻomaka ʻana o ka Seed Crystal: Hoʻohaʻahaʻa ʻia kahi aniani hua i loko o ka heheʻe, a ukali ʻia me ka huki wikiwiki ʻana e hana i ka ʻāʻī (ka anawaena <1 mm) e hoʻopau i nā dislocations.
3. Hoʻokumu ʻana i ka poʻohiwi a me ka ulu nui ʻana: Hoʻemi ʻia ka wikiwiki huki ʻana i 0.2–1 mm/h, e hoʻonui mālie ana i ke anawaena aniani i ka nui i koho ʻia (e laʻa, 4-12 iniha).
4. Annealing and Cooling: Hoʻomaʻalili ʻia ke aniani ma ka 0.1-0.5 ° C / min e hōʻemi i ka haʻihaʻi ʻana i ke kaumaha.
5. Nā ʻano kristal kūpono:
Papa Elele: Nā pani semiconductor (TTV <5 μm)
Māmā Optical: UV laser puka makani (transmittance >90%@200 nm)
Nā ʻano ʻano Doped: Ruby (Cr³⁺ ka hoʻopaʻa ʻana 0.01–0.5 wt.%), nā paipu sapphire polū

Nā ʻĀpana Pūnaehana Koʻikoʻi

1. Pūnaehana hehee
ʻIridium Crucible: Kūpaʻa i ka 2300°C, kū i ka corrosion, kūpono me nā hehee nui (100–400 kg).
ʻO ka Induction Heating Furnace: ʻO ka hoʻomalu wela kūʻokoʻa kūʻokoʻa (± 0.5 ° C), nā gradients thermal optimized.

2. Huki a me ka Rotation System
ʻO ke kaʻa Servo Kiʻekiʻe: ʻO ka huki ʻana i ka hoʻonā 0.01 mm/h, ka hoʻololi ʻana o ka huli ʻana <0.01 mm.
Mākēneki Fluid Seal: Hoʻouna ʻole i ka hoʻopili ʻana no ka ulu mau ʻana (> 72 mau hola).

3. Pūnaehana Mana wela
ʻO PID Closed-Loop Control: ʻO ka hoʻoponopono mana manawa maoli (50–200 kW) e hoʻopaʻa i ke kahua wela.
ʻO ka pale ʻana i ke kinoea inert: hui ʻia ʻo Ar/N₂ (99.999% maʻemaʻe) i mea e pale ai i ka oxidation.

4. ʻOtometi a me ka nānā ʻana
Ka nānā ʻana i ke anawaena o CCD: Manaʻo manawa maoli (pololei ± 0.01 mm).
Infrared Thermography: Nānā i ka morphology interface solid-liquid.

Hoʻohālikelike CZ vs. KY

Parameter	ʻO ke ʻano CZ	ʻO ke ala KY
ʻO Max. Ka nui kristal	12 iniha (300 mm)	400 mm.
Defect Density	<100/cm²	<50/cm²
Laki ulu	0.5–5 mm/h	0.1–2 mm/h
Ka hoʻohana ʻana i ka ikehu	50–80 kWh/kg	80–120 kWh/kg
Nā noi	Nā pani LED, epitaxy GaN	ʻO nā puka aniani, nā ingots nui
ʻO ke kumukūʻai	Kaumaha (hoʻokomo waiwai kiʻekiʻe)	Kiʻekiʻe (kaʻina hana paʻakikī)

Nā noi nui

1. ʻOihana Semiconductor
ʻO GaN Epitaxial Substrates: 2-8-inihi wafers (TTV <10 μm) no nā Micro-LED a me nā diodes laser.
ʻO SOI Wafers: ʻO ke ʻano ʻino o ka ʻili <0.2 nm no nā ʻāpana i hoʻohui ʻia me 3D.

2. Optoelectronics
UV Laser Windows: E kū i ka mana 200 W/cm² no ka lithography optics.
Nā ʻāpana Infrared: ʻO ka helu hoʻoheheʻe <10⁻³ cm⁻¹ no ke kiʻi wela.

3. Mea Hoʻohana Electronic
ʻO nā uhi kiʻi paʻi kiʻi kelepona: ʻo Mohs paʻakikī 9, 10 × ka hoʻomaikaʻi ʻana i ka pale ʻana.
Nā Hōʻike Smartwatch: Mānoanoa 0.3–0.5 mm, transmittance> 92%.

4. Palekana a me Aerospace
ʻO Windows Nuclear Reactor: ʻO ka hoʻomanawanui ʻana i ka radiation a hiki i 10¹⁶ n/cm².
Nā Mirror Laser Mana Kiʻekiʻe: Hoʻololi wela <λ/20@1064 nm.

Nā lawelawe a XKH

1. Hoʻopilikino Lako
Hoʻolālā Chamber Scalable: Φ200–400 mm hoʻonohonoho no ka hana wafer 2-12-iniha.
Hoʻololi ʻo Doping: Kākoʻo i ka lua-earth (Er/Yb) a me ka hoʻololi-metal (Ti/Cr) doping no nā waiwai optoelectronic i hoʻopili ʻia.

2. Kākoʻo hope-a-hope
Hoʻoponopono Kaʻina Hana: Nā ʻōkuhi i hōʻoia mua ʻia (50+) no nā mea LED, RF, a me nā ʻāpana paʻakikī.
Pūnaewele lawelawe honua: 24/7 mau diagnostics mamao a me ka mālama ʻana ma ka pūnaewele me kahi palapala hōʻoia 24 mau mahina.

3. ʻO ka hana ʻana i lalo
Wafer Fabrication: ʻOki ʻana, wili, a hoʻoliʻiliʻi no nā wafers 2-12-inihi (C/A-plane).
Nā Huahana Hoʻohui Waiwai:
Nā ʻĀpana Optical: UV/IR puka makani (0.5–50 mm mānoanoa).
ʻO nā mea waiwai waiwai: Cr³⁺ ruby (GIA-certified), Ti³⁺ star sapphire.

4. Ke alakaʻi ʻenehana
Palapala hōʻoia: EMI-compliant wafers.
Nā Patent: Nā patent koʻikoʻi i ka hana hou CZ.

Ka hopena

Hāʻawi nā lako hana CZ i ka hoʻohālikelike ʻana i ka nui-nui, nā helu defect ultra-haʻahaʻa, a me ke kūpaʻa kaʻina hana kiʻekiʻe, e hana ana i ka pae ʻoihana no ka LED, semiconductor, a me nā noi pale. Hāʻawi ʻo XKH i ke kākoʻo holoʻokoʻa mai ka hoʻopili ʻana i nā mea hana i ka hoʻoili ʻana ma hope o ka ulu ʻana, e hiki ai i nā mea kūʻai ke hoʻokō i nā kumu kūʻai kūpono, hana kiʻekiʻe kiʻekiʻe.