Semi-Insulating SiC ma Si Composite Substrates

ʻO ka wehewehe pōkole:

ʻO ka Semi-insulated SiC ma Si composite substrate he mea semiconductor ka waiho ʻana i kahi papa semi-insulated o ka silicon carbide (SiC) ma kahi substrate silika.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Nā mea	Hōʻike	Nā mea	Hōʻike
Anawaena	150±0.2mm	Kūlana	<111>/<100>/<110> a pēlā aku
Polytype	4H	ʻAno	P/N
Kū'ē	≥1E8ohm·cm	Palahalaha	Paʻa/ʻaʻa
Papa hoʻoili Mānoanoa	≥0.1μm	ʻEke Chip, ʻAka, Māwae (nānā ʻike maka)	ʻAʻohe
ʻAʻohe	≤5ea/wafer (2mm>D>0.5mm)	TTV	≤5μm
ʻOkaʻala mua	Ra≤0.2nm (5μm*5μm)	mānoanoa	500/625/675±25μm

Hāʻawi kēia hui ʻana i kekahi mau pono i ka hana uila:

Hoʻohālikelike: ʻO ka hoʻohana ʻana i kahi substrate silicon e hoʻohālikelike ʻia me nā ʻenehana hana hoʻokele silicon maʻamau a hiki i ka hoʻohui ʻana me nā kaʻina hana semiconductor i loaʻa.

ʻO ka hana wela kiʻekiʻe: Loaʻa i ka SiC ka hoʻoili wela wela maikaʻi loa a hiki ke hana i nā wela kiʻekiʻe, kūpono ia no ka mana kiʻekiʻe a me nā noi uila kiʻekiʻe.

Kiʻekiʻe Breakdown Voltage: Loaʻa i nā mea SiC kahi uila haʻihaʻi kiʻekiʻe a hiki ke kū i nā māla uila kiʻekiʻe me ka ʻole o ka haki ʻana.

Hoʻemi ʻia ka Pohō Mana: ʻO nā substrates SiC e ʻae i ka hoʻololi ʻana i ka mana ʻoi aku ka maikaʻi a me ka hoʻohaʻahaʻa haʻahaʻa o ka mana i nā mea uila i hoʻohālikelike ʻia i nā mea hana maʻamau.

Ka bandwidth ākea: Loaʻa iā SiC kahi bandwidth ākea, e ʻae ana i ka hoʻomohala ʻana o nā mea uila e hiki ke hana i nā mahana kiʻekiʻe a me nā kiʻekiʻe o ka mana.

No laila, hui pū ʻia nā substrates semi-insulating SiC ma Si composite i ka hoʻohālikelike ʻana o ke silika me nā waiwai uila a me nā mea wela o SiC, e kūpono ai no nā noi uila kiʻekiʻe.

Hoʻopili a hoʻouna

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