SiC
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4H-N 8 ʻīniha SiC substrate wafer Silicon Carbide Dummy Research grade 500um mānoanoa
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4H-N/6H-N SiC Wafer Reasearch hana Dummy grade Dia150mm Silicon carbide substrate
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8inihi 200mm Silicon Carbide SiC Wafers 4H-N ʻano ʻAno Hana ʻia 500um mānoanoa
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HPSI SiC wafer dia: 3 iniha mānoanoa: 350um± 25 µm no Power Electronics
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8 'īniha SiC silikon carbide wafer 4H-N ʻano 0.5mm papa hana noiʻi papa hana maʻamau i poni ʻia.
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3 ʻīniha Maʻemaʻe kiʻekiʻe Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-type SiC substrate SiC wafer Dia2inch huahana hou
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2 'īniha 6H-N Silicon Carbide Substrate Sic Wafer Papalua Polished Conductive Prime Grade Mos Grade
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SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI（Semi-Insulating maemae kiʻekiʻe ） 4H/6H-P 3C -n ʻano 2 3 4 6 8 ʻīniha loaʻa
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2 ʻīniha Sic silikon carbide substrate 6H-N ʻAno 0.33mm 0.43mm ʻaoʻao ʻelua hoʻoliʻi kiʻekiʻe.
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SiC substrate 3inihi 350um mānoanoa HPSI ʻano Prime Grade Dummy grade
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Silicon Carbide SiC Ingot 6inch N type Dummy/prime grade mānoanoa hiki ke hana maʻamau