SiC
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12 'īniha SIC substrate silicon carbide papa nui anawaena 300mm nui nui 4H-N Kūpono no ka mea mana kiʻekiʻe ka hoʻoheheʻe wela.
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8 'īniha SiC silikon carbide wafer 4H-N ʻano 0.5mm papa hana noiʻi papa hana maʻamau i poni ʻia.
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HPSI SiC wafer dia: 3 iniha mānoanoa: 350um± 25 µm no Power Electronics
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3 ʻīniha Maʻemaʻe kiʻekiʻe Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-type SiC substrate SiC wafer Dia2inch huahana hou
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8inihi 200mm Silicon Carbide SiC Wafers 4H-N ʻano ʻAno Hana ʻia 500um mānoanoa
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2 'īniha 6H-N Silicon Carbide Substrate Sic Wafer Papalua Polished Conductive Prime Grade Mos Grade
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SiC Substrate SiC Epi-wafer conductive/semi type 4 6 8 iniha
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SiC Epitaxial Wafer no nā Mana Mana - 4H-SiC, N-type, Haʻahaʻa Defect Density
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4H-N Type SiC Epitaxial Wafer High Voltage High Frequency
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3 'īniha Maʻemaʻe Kiʻekiʻe (Undoped) Silicon Carbide Wafers Semi-Insulating Sic Substrates (HPSl)
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4H-N 8 ʻīniha SiC substrate wafer Silicon Carbide Dummy Research grade 500um mānoanoa