SiC
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12 ʻīniha SIC substrate silicon carbide prime grade diameter 300mm nui ka nui 4H-N Kūpono no ka hoʻopuehu wela o ka mea mana kiʻekiʻe
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8 ʻīniha SiC silicon carbide wafer 4H-N ʻano 0.5mm papa hana noiʻi papa hana i hoʻopili ʻia
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ʻO ke anawaena wafer HPSI SiC: 3'iniha ka mānoanoa: 350um± 25 µm no nā mea uila mana
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3'īniha Semi-Insulating maʻemaʻe kiʻekiʻe (HPSI) SiC wafer 350um Dummy grade Prime grade
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ʻO ka substrate SiC ʻano P SiC wafer Dia2inch huahana hou
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ʻO 8'īniha 200mm Silicon Carbide SiC Wafers 4H-N ʻano Hana hana 500um mānoanoa
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade
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ʻO ka wafer 12-'īniha 4H-SiC no nā aniani AR
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ʻO ka HPSI SiC Wafer ≥90% Transmittance Optical Grade no nā aniani AI/AR
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ʻO ka Semi-Insulating Silicon Carbide (SiC) Substrate High-Purity no nā aniani Ar
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Nā Wafers Epitaxial 4H-SiC no nā MOSFET Voltage Ultra-High (100–500 μm, 6 ʻīniha)
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ʻO SICOI (Silicon Carbide ma ka Insulator) Wafers SiC Film ON Silicon