SiC
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4H-N 8 ʻīniha SiC substrate wafer Silicon Carbide Dummy Research grade 500um mānoanoa
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4H-N/6H-N SiC Wafer Reasearch hana Dummy grade Dia150mm Silicon carbide substrate
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12 'īniha SIC substrate silicon carbide papa nui anawaena 300mm nui nui 4H-N Kūpono no ka mea mana kiʻekiʻe ka hoʻoheheʻe wela.
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HPSI SiC wafer dia: 3 iniha mānoanoa: 350um± 25 µm no Power Electronics
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8 'īniha SiC silikon carbide wafer 4H-N ʻano 0.5mm papa hana noiʻi papa hana maʻamau i poni ʻia.
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3 ʻīniha Maʻemaʻe kiʻekiʻe Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-type SiC substrate SiC wafer Dia2inch huahana hou
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8inihi 200mm Silicon Carbide SiC Wafers 4H-N ʻano ʻAno Hana ʻia 500um mānoanoa
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2 'īniha 6H-N Silicon Carbide Substrate Sic Wafer Papalua Polished Conductive Prime Grade Mos Grade
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3 'īniha Maʻemaʻe Kiʻekiʻe (Undoped) Silicon Carbide Wafers Semi-Insulating Sic Substrates (HPSl)
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ʻO ka wafer i uhi ʻia, ka wafer saphire, ka wafer silikon, ka wafer SiC, 2inch 4inch 6inch, ka mānoanoa i uhi ʻia gula 10nm 50nm 100nm
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C ʻano 2 ʻīniha 3 ʻīniha 4 ʻīniha 6 ʻīniha 8 ʻīniha