ʻO ka lima hoʻohana hopena seramika SiC no ka lawe ʻana i ka wafer
ʻO ka mea hoʻokō hopena keramika SiC Abstract
ʻO ka SiC (Silicon Carbide) ceramic end-effector kahi ʻāpana koʻikoʻi i nā ʻōnaehana lawelawe wafer kiʻekiʻe i hoʻohana ʻia i ka hana semiconductor a me nā wahi microfabrication holomua. Hana ʻia e hoʻokō i nā koi koi o nā wahi maʻemaʻe loa, wela kiʻekiʻe, a me nā wahi paʻa loa, hōʻoia kēia end-effector kūikawā i ka halihali hilinaʻi a me ka haumia ʻole o nā wafers i ka wā o nā ʻanuʻu hana koʻikoʻi e like me ka lithography, etching, a me ka deposition.
Ma ka hoʻohana ʻana i nā waiwai waiwai kiʻekiʻe o ka silicon carbide—e like me ke alakaʻi wela kiʻekiʻe, ka paʻakikī loa, ka inertness kemika maikaʻi loa, a me ka hoʻonui wela liʻiliʻi—hāʻawi ka SiC ceramic end-effector i ka paʻakikī mechanical a me ke kūpaʻa dimensional ʻoiai ma lalo o ka wikiwiki o ka thermal cycling a i ʻole i loko o nā keʻena hana corrosive. ʻO kona mau ʻano hana ʻāpana haʻahaʻa a me ke kūpaʻa plasma e kūpono loa ia no nā noi hana lumi maʻemaʻe a me ka vacuum, kahi e mālama ai i ka pono o ka ʻili wafer a me ka hōʻemi ʻana i ka haumia o nā ʻāpana he mea nui loa.
Noi ʻana o ka mea hoʻokō hopena seramika SiC
1. Ka lawelawe ʻana i ka wafer semiconductor
Hoʻohana nui ʻia nā mea hoʻopau keramika SiC i ka ʻoihana semiconductor no ka lawelawe ʻana i nā wafers silicon i ka wā o ka hana automated. Hoʻokomo pinepine ʻia kēia mau mea hoʻopau ma nā lima robotic a i ʻole nā ʻōnaehana hoʻoili vacuum a ua hoʻolālā ʻia e hoʻokipa i nā wafers o nā nui like ʻole e like me 200mm a me 300mm. He mea nui lākou i nā kaʻina hana e pili ana i ka Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), etching, a me ka diffusion—kahi i maʻamau ai nā mahana kiʻekiʻe, nā kūlana vacuum, a me nā kinoea corrosive. ʻO ke kūpaʻa wela kūikawā o SiC a me ke kūpaʻa kemika e lilo ia i mea kūpono e kū i kēlā mau ʻano ʻino me ka ʻole o ka hōʻino ʻia.
2. Hoʻohālikelike ʻana o ka lumi maʻemaʻe a me ka vacuum
I loko o nā hoʻonohonoho lumi maʻemaʻe a me ka vacuum, kahi e pono ai ke hoʻemi ʻia ka haumia o nā ʻāpana, hāʻawi nā keramika SiC i nā pono koʻikoʻi. ʻO ka ʻili mānoanoa a laumania o ka mea e kūʻē i ka hana ʻana o nā ʻāpana, e kōkua ana i ka mālama ʻana i ka pono o ka wafer i ka wā o ka lawe ʻana. ʻO kēia ka mea e kūpono loa ai nā hopena hopena SiC no nā kaʻina hana koʻikoʻi e like me Extreme Ultraviolet Lithography (EUV) a me Atomic Layer Deposition (ALD), kahi e koʻikoʻi ai ka maʻemaʻe. Eia kekahi, ʻo ka haʻahaʻa o ka outgassing a me ke kūʻē plasma kiʻekiʻe o SiC e hōʻoia i ka hana hilinaʻi i loko o nā keʻena vacuum, e hoʻolōʻihi ana i ke ola o nā mea hana a me ka hōʻemi ʻana i ka pinepine o ka mālama ʻana.
3. Nā ʻōnaehana hoʻonohonoho kiʻekiʻe
He mea nui ka pololei a me ke kūpaʻa i nā ʻōnaehana lawelawe wafer holomua, ʻoi aku hoʻi i ka metrology, ka nānā ʻana, a me nā lako hoʻonohonoho. He haʻahaʻa loa ka coefficient o ka hoʻonui ʻana o ka thermal a me ke kiʻekiʻe o ka paʻakikī o nā keramika SiC, e hiki ai i ka hopena hopena ke mālama i kona pololei o ke kūkulu ʻana ma lalo o ka paikikala thermal a i ʻole ka ukana mechanical. Hōʻoia kēia e noho pololei nā wafers i ka wā o ka lawe ʻana, e hōʻemi ana i ka pilikia o nā micro-scratches, misalignment, a i ʻole nā hewa ana - nā mea e koʻikoʻi nui nei ma nā kikowaena hana sub-5nm.
Nā Waiwai Hoʻokō Hopena Keramika SiC
1. Ikaika a me ka Paʻakikī Mechanical Kiʻekiʻe
Loaʻa i nā keramika SiC ka ikaika mechanical kūikawā, me ka ikaika flexural e ʻoi aku ana ma mua o 400 MPa a me nā waiwai paʻakikī Vickers ma luna o 2000 HV. ʻO kēia ka mea e kūpaʻa loa ai lākou i ke kaumaha mechanical, ka hopena, a me ke komo ʻana, ʻoiai ma hope o ka hoʻohana lōʻihi ʻana. ʻO ke koʻikoʻi kiʻekiʻe o SiC e hōʻemi pū i ka deflection i ka wā o nā hoʻoili wafer wikiwiki, e hōʻoiaʻiʻo ana i ke kūlana pololei a hana hou ʻia.
2. Kūlana Paʻa Mahana Maikaʻi Loa
ʻO kekahi o nā waiwai waiwai nui o nā keramika SiC ʻo ko lākou hiki ke kū i nā mahana kiʻekiʻe loa—pinepine a hiki i 1600°C i nā lewa inert—me ka ʻole o ka nalowale ʻana o ka pono mechanical. ʻO kā lākou coefficient haʻahaʻa o ka hoʻonui ʻana o ka thermal (~4.0 x 10⁻⁶ /K) e hōʻoiaʻiʻo ana i ka paʻa o ka dimensional ma lalo o ka thermal cycling, e kūpono ana iā lākou no nā noi e like me CVD, PVD, a me ka annealing wela kiʻekiʻe.
Q&A ka mea hoʻokō hopena seramika SiC
Q: He aha ka mea i hoʻohana ʻia i ka mea hoʻokō hopena wafer?
A:Hana pinepine ʻia nā mea hoʻopau wafer mai nā mea e hāʻawi ana i ka ikaika kiʻekiʻe, ke kūpaʻa wela, a me ka hana ʻana o nā ʻāpana haʻahaʻa. Ma waena o kēia mau mea, ʻo ka keramika Silicon Carbide (SiC) kekahi o nā mea holomua loa a makemake nui ʻia. He paʻakikī loa nā keramika SiC, paʻa i ka wela, inert kemika, a kūpaʻa i ke komo ʻana, e kūpono ana iā lākou no ka lawelawe ʻana i nā wafers silicon palupalu i loko o nā wahi lumi maʻemaʻe a me ka vacuum. Ke hoʻohālikelike ʻia me ka quartz a i ʻole nā metala i uhi ʻia, hāʻawi ʻo SiC i ke kūpaʻa dimensional kiʻekiʻe ma lalo o nā mahana kiʻekiʻe a ʻaʻole hoʻokahe i nā ʻāpana, kahi e kōkua ai i ka pale ʻana i ka haumia.










