ʻO ka graphite pāpaʻi seramika SiC me ka uhi CVD SiC no nā lako
ʻAʻole hoʻohana ʻia nā seramika silikoni carbide wale nō i ke kahua deposition kiʻiʻoniʻoni ʻoniʻoni, e like me ka epitaxy a i ʻole MOCVD, a i ʻole i ka hana wafer, ma ka puʻuwai kahi i hoʻokuʻu mua ʻia ai nā pahu lawe wafer no MOCVD i ke kaiapuni deposition, a no laila ke kūpaʻa nui nei. wela a me ka corrosion.SiC-coated lawe no hoi i kiʻekiʻe thermal conductivity a me ka maikaʻi loa thermal mahele waiwai.
ʻO nā mea lawe wafer maʻemaʻe Chemical Vapor Deposition Silicon Carbide (CVD SiC) no ke kaʻina hana kiʻekiʻe me Metal Organic Chemical Vapor Deposition (MOCVD).
ʻOi aku ka maikaʻi o nā mea lawe wafer CVD SiC maʻemaʻe ma mua o nā mea lawe wafer maʻamau i hoʻohana ʻia i kēia kaʻina hana, he graphite a uhi ʻia me kahi papa o CVD SiC. ʻAʻole hiki i kēia mau mea lawe graphite i uhi ʻia ke kūpaʻa i nā wela kiʻekiʻe (1100 a 1200 degere Celsius) i koi ʻia no ka waiho ʻana o GaN o ke alakaʻi uliuli a me ke keʻokeʻo kiʻekiʻe o kēia lā. ʻO ka wela kiʻekiʻe ke kumu o ka uhi ʻana e hoʻomohala i nā pinhole liʻiliʻi kahi e hoʻopau ai nā kemika i ka graphite ma lalo. ʻO nā ʻāpana graphite a laila hoʻoheheʻe ʻia a hoʻohaumia i ka GaN, e hoʻololi i ka mea lawe wafer i uhi ʻia.
He maʻemaʻe ʻo CVD SiC he 99.999% a ʻoi aʻe a he kiʻekiʻe ka thermal conductivity a me ke kūpaʻa haʻalulu wela. No laila, hiki iā ia ke pale aku i nā wela kiʻekiʻe a me nā kaiapuni koʻikoʻi o ka hana ʻana o nā kukui LED kiʻekiʻe. He mea monolithic paʻa a hiki i ka manaʻo kumu, hana i nā mea liʻiliʻi liʻiliʻi, a hōʻike i ka corrosion kiʻekiʻe a me ke kūpaʻa erosion. Hiki i ka mea ke hoʻololi i ka opacity a me ka conductivity me ka ʻole o ka hoʻokomo ʻana i nā mea haumia metala. He 17 'īniha ke anawaena o nā mea lawe wafer a hiki ke paʻa i nā wafers 40 2-4 iniha.