ʻO ka graphite pāpaʻi seramika SiC me ka uhi CVD SiC no nā lako
ʻAʻole hoʻohana wale ʻia nā silikoni carbide seramika i ke kahua hoʻoheheʻe kiʻi ʻoniʻoni ʻoniʻoni, e like me ka epitaxy a i ʻole MOCVD, a i ʻole i ka hana wafer, ma ka puʻuwai o ka mea lawe wafer trays no MOCVD e hoʻokau mua ʻia i ke kaiapuni deposition, a no laila ua kūpaʻa loa i ka wela a me ka corrosion.
ʻO nā mea lawe wafer maʻemaʻe Chemical Vapor Deposition Silicon Carbide (CVD SiC) no ke kaʻina hana kiʻekiʻe me Metal Organic Chemical Vapor Deposition (MOCVD).
ʻOi aku ka maikaʻi o nā mea lawe wafer CVD SiC maʻemaʻe ma mua o nā mea lawe wafer maʻamau i hoʻohana ʻia i kēia kaʻina hana, he graphite a uhi ʻia me kahi papa o CVD SiC. ʻAʻole hiki i kēia mau mea lawe graphite i uhi ʻia ke kūpaʻa i nā wela kiʻekiʻe (1100 a 1200 degere Celsius) i koi ʻia no ka waiho ʻana o GaN o ke alakaʻi uliuli a me ke keʻokeʻo kiʻekiʻe o kēia lā. ʻO ka wela kiʻekiʻe ke kumu o ka uhi ʻana e hoʻomohala i nā pinhole liʻiliʻi kahi e hoʻopau ai nā kemika i ka graphite ma lalo. ʻO nā ʻāpana graphite a laila hoʻoheheʻe ʻia a hoʻohaumia i ka GaN, e hoʻololi i ka mea lawe wafer i uhi ʻia.
He maʻemaʻe ʻo CVD SiC he 99.999% a ʻoi aʻe a he kiʻekiʻe ka thermal conductivity a me ke kūpaʻa haʻalulu wela. No laila, hiki iā ia ke pale aku i nā wela kiʻekiʻe a me nā kaiapuni koʻikoʻi o ka hana ʻana o nā kukui LED kiʻekiʻe. He mea monolithic paʻa a hiki i ka manaʻo kumu, hana i nā mea liʻiliʻi liʻiliʻi, a hōʻike i ka corrosion kiʻekiʻe a me ke kūpaʻa erosion. Hiki i ka mea ke hoʻololi i ka opacity a me ka conductivity me ka ʻole o ka hoʻokomo ʻana i nā mea haumia metala. He 17 'īniha ke anawaena o nā mea lawe wafer a hiki ke paʻa i nā wafers 40 2-4 iniha.
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