SiC Epitaxial Wafer no nā Mana Mana - 4H-SiC, N-type, Haʻahaʻa Defect Density
Kiʻi kikoʻī


Hoʻolauna
Aia ka SiC Epitaxial Wafer i ke kumu o nā mea hana semiconductor hana kiʻekiʻe o kēia wā, ʻoi aku ka nui o nā mea i hoʻolālā ʻia no nā hana kiʻekiʻe, kiʻekiʻe-frequency, a me nā hana wela kiʻekiʻe. ʻO ka pōkole no ka Silicon Carbide Epitaxial Wafer, kahi SiC Epitaxial Wafer i loaʻa i kahi papa epitaxial SiC lahilahi kiʻekiʻe i ulu ma luna o kahi substrate SiC nui. Ke hoʻonui wikiwiki nei ka hoʻohana ʻana i ka ʻenehana SiC Epitaxial Wafer i nā kaʻa uila, nā grids akamai, nā ʻōnaehana ikehu hou, a me ka aerospace ma muli o kāna mau waiwai kino a me ka uila i hoʻohālikelike ʻia me nā wafers maʻamau.
Nā Kumu Hana Hana o SiC Epitaxial Wafer
Pono ka hana ʻana i kahi SiC Epitaxial Wafer i kahi kaʻina hana hoʻoheheʻe kemika (CVD). Hoʻoulu pinepine ʻia ka papa epitaxial ma kahi substrate SiC monocrystalline me ka hoʻohana ʻana i nā kinoea e like me silane (SiH₄), propane (C₃H₈), a me ka hydrogen (H₂) ma nā mahana ma mua o 1500°C. ʻO kēia ulu epitaxial wela kiʻekiʻe e hōʻoia i ka alignment crystalline maikaʻi loa a me nā hemahema liʻiliʻi ma waena o ka papa epitaxial a me ka substrate.
Aia i loko o ke kaʻina hana kekahi mau pae koʻikoʻi:
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Hoʻomākaukau substrate: Hoʻomaʻemaʻe ʻia a hoʻomaʻemaʻe ʻia ke kumu wafer SiC i ka maʻalahi atomic.
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Ka ulu ʻana o CVD: I loko o kahi reactor hoʻomaʻemaʻe kiʻekiʻe, pane nā kinoea e waiho i kahi ʻāpana SiC kristal hoʻokahi ma ka substrate.
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Hoʻoponopono Doping: Hoʻokomo ʻia ka doping N-type a i ʻole P-type doping i ka wā epitaxy e loaʻa ai nā waiwai uila i makemake ʻia.
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Nānā a me Metrology: Hoʻohana ʻia ka microscopy optical, AFM, a me X-ray diffraction no ka hōʻoia ʻana i ka mānoanoa o ka papa, ka noʻonoʻo doping, a me ka nui kīnā.
Ke nānā pono ʻia kēlā me kēia SiC Epitaxial Wafer e mālama i ka hoʻomanawanui paʻa i ka like ʻana o ka mānoanoa, ka palahalaha o ka ʻili, a me ka resistivity. Pono ka hiki ke hoʻoponopono i kēia mau ʻāpana no nā MOSFET kiʻekiʻe-volt, Schottky diodes, a me nā mea mana ʻē aʻe.
Hōʻike
ʻĀpana | Hōʻike |
Māhele | ʻEpekema Maikaʻi, Nā Papa Hoʻokahi Crystal |
Polytype | 4H |
Doping | ʻAno N |
Anawaena | 101 mm |
Hoʻomanawanui anawaena | ± 5% |
mānoanoa | 0.35 mm |
Hoʻomanawanui mānoanoa | ± 5% |
Ka lōʻihi pālahalaha | 22 mm (± 10%) |
TTV (Hoʻololi Mānoanoa Hui Pū ʻIa) | ≤10 µm |
Warp | ≤25 µm |
FWHM | ≤30 Arc-sec |
Hoʻopau ʻili | Rq ≤0.35 nm |
Nā noi o SiC Epitaxial Wafer
Pono nā huahana SiC Epitaxial Wafer i nā ʻāpana he nui:
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Nā Kaʻa Uila (EV): Hoʻonui nā mea hoʻohana ʻo SiC Epitaxial Wafer i ka pono powertrain a hoʻemi i ke kaumaha.
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Ikehu Hou: Hoʻohana ʻia i nā mea hoʻohuli no nā ʻōnaehana mana o ka lā a me ka makani.
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Na Lako Mana Hana: E hoʻololi i ka hoʻololi wela kiʻekiʻe me nā poho haʻahaʻa.
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Aerospace a me ka pale: He kūpono no nā kaiapuni koʻikoʻi e koi ana i nā semiconductors ikaika.
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5G kahua kumu: Kākoʻo nā ʻāpana SiC Epitaxial Wafer i nā mānoanoa mana kiʻekiʻe no nā noi RF.
Hāʻawi ka SiC Epitaxial Wafer i nā hoʻolālā paʻa, hoʻololi wikiwiki, a ʻoi aku ka maikaʻi o ka hoʻololi ʻana i ka ikehu i hoʻohālikelike ʻia me nā wafer silika.
ʻO nā pono o ka SiC Epitaxial Wafer
Hāʻawi ka ʻenehana SiC Epitaxial Wafer i nā pono nui:
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Kiʻekiʻe Haʻahaʻa Voltage: Hoʻopaʻa i nā voltage a hiki i ka 10 manawa kiʻekiʻe ma mua o nā wafers Si.
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ʻO ka hoʻoili wela: Hoʻopau wikiwiki ʻo SiC Epitaxial Wafer i ka wela, e hiki ai i nā mea hana ke holo mālie a hilinaʻi.
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Kiʻekiʻe hoʻololi wikiwiki: ʻO nā poho hoʻololi haʻahaʻa e hiki ai ke ʻoi aku ka maikaʻi a me ka miniaturization.
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Laulā Bandgap: E hōʻoia i ka paʻa i nā voltage kiʻekiʻe a me nā mahana.
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Paʻa Mea: He kemika inert a me ka ikaika mechanically SiC, kūpono no nā noi koi.
ʻO kēia mau mea maikaʻi e hoʻolilo i ka SiC Epitaxial Wafer i mea koho no ka hanauna hou o semiconductors.
FAQ: SiC Epitaxial Wafer
Q1: He aha ka ʻokoʻa ma waena o kahi Wafer SiC a me kahi Wafer Epitaxial SiC?
ʻO kahi wafer SiC e pili ana i ka substrate nui, aʻo kahi SiC Epitaxial Wafer e pili ana i kahi papa doped kūikawā i hoʻohana ʻia i ka hana ʻana i nā mea hana.
Q2: He aha nā mānoanoa i loaʻa no nā ʻāpana SiC Epitaxial Wafer?
ʻO nā papa epitaxial maʻamau mai kahi liʻiliʻi micrometer a ma luna o 100 μm, ma muli o nā koi noi.
Q3: He kūpono anei ʻo SiC Epitaxial Wafer no nā wahi wela kiʻekiʻe?
ʻAe, hiki iā SiC Epitaxial Wafer ke hana i nā kūlana ma luna o 600 ° C, ʻoi aku ka maikaʻi o ke silika.
Q4: No ke aha he mea nui ka defect density ma SiC Epitaxial Wafer?
ʻO ka haʻahaʻa haʻahaʻa haʻahaʻa e hoʻomaikaʻi i ka hana a me ka hoʻohua ʻana o ka mea hana, ʻoi aku hoʻi no nā noi uila kiʻekiʻe.
Q5: Loaʻa nā N-type a me P-type SiC Epitaxial Wafers?
ʻAe, hana ʻia nā ʻano ʻelua me ka hoʻohana ʻana i ka mana kinoea dopant i ka wā o ke kaʻina epitaxial.
Q6: He aha ka nui o ka wafer maʻamau no SiC Epitaxial Wafer?
ʻO nā anawaena maʻamau ka 2-ʻīniha, 4-ʻīniha, 6-ʻīniha, a me ka hoʻonui ʻana i ka 8-ʻīniha no ka hana kiʻekiʻe.
Q7: Pehea ka hopena o ka SiC Epitaxial Wafer i ke kumukūʻai a me ka pono?
ʻOiai ʻoi aku ka maikaʻi o ke kumukūʻai ma mua o ka silika, ʻo SiC Epitaxial Wafer e hōʻemi ana i ka nui o ka ʻōnaehana a me ka nalowale o ka mana, e hoʻomaikaʻi ana i ka pono o ke kumukūʻai no ka wā lōʻihi.