ʻO ka Wafer Epitaxial SiC no nā mea hana mana - 4H-SiC, ʻano N, Low Defect Density

Wehewehe Pōkole:

ʻO ka SiC Epitaxial Wafer ke kikowaena o nā mea hana semiconductor hana kiʻekiʻe o kēia wā, ʻoi aku hoʻi nā mea i hoʻolālā ʻia no nā hana mana kiʻekiʻe, alapine kiʻekiʻe, a me nā hana wela kiʻekiʻe. ʻO ka pōkole no Silicon Carbide Epitaxial Wafer, ʻo kahi SiC Epitaxial Wafer he papa epitaxial SiC lahilahi kiʻekiʻe i ulu ʻia ma luna o kahi substrate SiC nui. Ke hoʻonui wikiwiki nei ka hoʻohana ʻana i ka ʻenehana SiC Epitaxial Wafer i nā kaʻa uila, nā grids akamai, nā ʻōnaehana ikehu hou, a me ka aerospace ma muli o kona mau waiwai kino a me nā uila kiʻekiʻe i hoʻohālikelike ʻia me nā wafers silicon-based maʻamau.

E leka uila mai iā mākou

Nā hiʻohiʻona

Kiʻikuhi kikoʻī

Hoʻolauna

Nā Kumu Hana o ka SiC Epitaxial Wafer

ʻO ka hana ʻana i kahi SiC Epitaxial Wafer e pono ai kahi kaʻina hana hoʻokaʻawale kemika (CVD) i kāohi nui ʻia. Hoʻoulu pinepine ʻia ka papa epitaxial ma luna o kahi substrate SiC monocrystalline me ka hoʻohana ʻana i nā kinoea e like me silane (SiH₄), propane (C₃H₈), a me ka hydrogen (H₂) ma nā mahana ma mua o 1500°C. ʻO kēia ulu ʻana o ka epitaxial wela kiʻekiʻe e hōʻoiaʻiʻo i ka hoʻonohonoho crystalline maikaʻi loa a me nā hemahema liʻiliʻi ma waena o ka papa epitaxial a me ka substrate.

Aia i loko o ke kaʻina hana kekahi mau pae koʻikoʻi:

Hoʻomākaukau ʻana o ka substrateHoʻomaʻemaʻe ʻia a hoʻopili ʻia ka wafer SiC kumu i ka laumania atomika.
Ka ulu ʻana o CVDI loko o kahi reactor maʻemaʻe kiʻekiʻe, hana nā kinoea e waiho i kahi papa SiC kristal hoʻokahi ma luna o ka substrate.
Ka Mana Hoʻohui ʻAnaHoʻokomo ʻia ka doping ʻano-N a i ʻole ʻano-P i ka wā epitaxy e hoʻokō ai i nā waiwai uila i makemake ʻia.
Nānā a me ka MetrologyHoʻohana ʻia ka microscopy optical, AFM, a me ka diffraction X-ray e hōʻoia i ka mānoanoa o ka papa, ka nui o ka doping, a me ka nui o nā kīnā.

Nānā pono ʻia kēlā me kēia SiC Epitaxial Wafer e mālama i nā hoʻomanawanui paʻa i ka like ʻana o ka mānoanoa, ka palahalaha o ka ʻili, a me ke kū'ē ʻana. He mea nui ka hiki ke hoʻoponopono pono i kēia mau palena no nā MOSFET voltage kiʻekiʻe, nā diode Schottky, a me nā mea hana mana ʻē aʻe.

Nā kikoʻī

Palena	Nā kikoʻī
Nā Māhele	ʻEpekema Mea Hana, Nā Papahana Kristala Hoʻokahi
Polytype	4H
Hoʻohana ʻia ka lāʻau lapaʻau	ʻAno N
Anawaena	101 mm
Ke ahonui ʻana o ke anawaena	± 5%
Mānoanoa	0.35 mm
Ka hoʻomanawanui mānoanoa	± 5%
Ka Lōʻihi Palahalaha Mua	22 mm (± 10%)
TTV (ʻOkoʻa Mānoanoa Holoʻokoʻa)	≤10 µm
ʻŌwiliwili	≤25 µm
FWHM	≤30 Arc-sec
Hoʻopau ʻili	Rq ≤0.35 nm

Nā noi o ka SiC Epitaxial Wafer

He mea nui nā huahana SiC Epitaxial Wafer ma nā ʻāpana he nui:

Nā Kaʻa Uila (EV)Hoʻonui nā mea hana i hoʻokumu ʻia ma ka SiC Epitaxial Wafer i ka pono o ka powertrain a hoʻemi i ke kaumaha.
Ikehu HoʻohouHoʻohana ʻia i nā inverters no nā ʻōnaehana mana lā a me ka makani.
Nā Lako Mana ʻOihana: E hoʻā i ke kuapo alapine kiʻekiʻe, mahana kiʻekiʻe me nā pohō haʻahaʻa.
Aerospace a me ka Pale KauaKūpono no nā ʻano ʻino e pono ai nā semiconductors ikaika.
Nā Kikowaena Kahua 5GKākoʻo nā ʻāpana SiC Epitaxial Wafer i nā mānoanoa mana kiʻekiʻe no nā noi RF.

Hiki i ka SiC Epitaxial Wafer ke hoʻolālā liʻiliʻi, ka hoʻololi wikiwiki ʻana, a me ka pono hoʻololi ikehu kiʻekiʻe aʻe i hoʻohālikelike ʻia me nā wafers silicon.

Nā Pōmaikaʻi o ka SiC Epitaxial Wafer

Hāʻawi ka ʻenehana SiC Epitaxial Wafer i nā pono koʻikoʻi:

Ka Uila Haʻihaʻi Kiʻekiʻe: Kū i nā voltages a hiki i ka 10 manawa ʻoi aku ke kiʻekiʻe ma mua o nā wafers Si.
Ka Hoʻokele WelaHoʻopau wikiwiki ka SiC Epitaxial Wafer i ka wela, e ʻae ana i nā polokalamu e holo anuanu a hilinaʻi hoʻi.
Nā wikiwiki hoʻololi kiʻekiʻeʻO nā pohō hoʻololi haʻahaʻa e hiki ai i ka pono kiʻekiʻe a me ka miniaturization.
Ka laulā ākea: Hōʻoia i ke kūpaʻa ma nā voltages a me nā mahana kiʻekiʻe.
Paʻa o nā meaHe inert kemika ʻo SiC a he ikaika mechanical, kūpono no nā noi koi.

ʻO kēia mau pono e hoʻolilo i ka SiC Epitaxial Wafer i mea koho no ka hanauna hou o nā semiconductors.

Nā nīnau i nīnau pinepine ʻia: SiC Epitaxial Wafer

Q1: He aha ka ʻokoʻa ma waena o kahi wafer SiC a me kahi Wafer Epitaxial SiC?
ʻO ka wafer SiC e pili ana i ka substrate nui, ʻoiai ʻo ka SiC Epitaxial Wafer e pili ana i kahi papa doped i ulu kūikawā ʻia i hoʻohana ʻia i ka hana ʻana o ka hāmeʻa.

Q2: He aha nā mānoanoa i loaʻa no nā papa SiC Epitaxial Wafer?
ʻO ka maʻamau, ʻokoʻa nā papa epitaxial mai kekahi mau micrometer a i ʻoi aku ma mua o 100 μm, ma muli o nā koi noi.

Q3: He kūpono anei ka SiC Epitaxial Wafer no nā wahi wela kiʻekiʻe?
ʻAe, hiki i ka SiC Epitaxial Wafer ke hana i nā kūlana ma luna o 600°C, e ʻoi aku ka maikaʻi ma mua o ka silicon.

Q4: No ke aha he mea nui ka nui o nā hemahema i ka SiC Epitaxial Wafer?
Hoʻomaikaʻi ka nui o nā hemahema haʻahaʻa i ka hana a me ka hua o ka hāmeʻa, ʻoi aku hoʻi no nā noi voltage kiʻekiʻe.

Q5: Loaʻa nā Wafers Epitaxial SiC ʻano N a me ke ʻano P?
ʻAe, ua hana ʻia nā ʻano ʻelua me ka hoʻohana ʻana i ka kaohi kinoea dopant pololei i ka wā o ke kaʻina hana epitaxial.

Q6: He aha nā nui wafer maʻamau no ka SiC Epitaxial Wafer?
ʻO nā anawaena maʻamau e komo pū me 2-'īniha, 4-'īniha, 6-'īniha, a ke piʻi nei ka 8-'īniha no ka hana nui ʻana.

Q7: Pehea ka hopena o ka SiC Epitaxial Wafer i ke kumukūʻai a me ka pono?
ʻOiai ʻoi aku ke kumukūʻai ma mua o ka silicon i ka wā mua, hoʻemi ka SiC Epitaxial Wafer i ka nui o ka ʻōnaehana a me ka pohō mana, e hoʻomaikaʻi ana i ka pono o ke kumukūʻai holoʻokoʻa i ka wā lōʻihi.

Ma mua: ʻO ka ʻōmole Sapphire no ka pale ʻana i ka Thermocouple - ʻO ka pololei o ka mahana kiʻekiʻe ma nā wahi ʻino

Aʻe: ʻAno 4H-N SiC Epitaxial Wafer Kiʻekiʻe Voltage Kiʻekiʻe Frequency