SiC Ingot 4H-N ʻano Dummy papa 2 iniha 3 ʻīniha 4 ʻīniha 6 ʻīniha ka mānoanoa:>10mm

ʻO ka wehewehe pōkole:

ʻO ka 4H-N Type SiC Ingot (Dummy Grade) kahi mea waiwai i hoʻohana ʻia i ka hoʻomohala ʻana a me ka hoʻāʻo ʻana i nā mea hana semiconductor holomua. Me kona mau waiwai uila, wela, a me ka mechanical, he mea kūpono ia no nā noi kiʻekiʻe a me ka wela. He kūpono loa kēia mea no ka noiʻi a me ka hoʻomohala ʻana i ka uila uila, nā ʻōnaehana automotive, a me nā mea hana ʻoihana. Loaʻa i nā nui like ʻole, me ka 2-inch, 3-inch, 4-inch, a me 6-inch diameters, ua hoʻolālā ʻia kēia ingot e hoʻokō i nā koi koʻikoʻi o ka ʻoihana semiconductor ʻoiai e hāʻawi ana i ka hana maikaʻi loa a me ka hilinaʻi.


Huahana Huahana

Huahana Huahana

Palapala noi

Mea uila uila:Hoʻohana ʻia i ka hana ʻana i nā transistors mana kiʻekiʻe, nā diodes, a me nā mea hoʻoponopono no nā noi ʻoihana a me nā kaʻa.

Nā Kaʻa Uila (EV):Hoʻohana ʻia i ka hana ʻana i nā modula mana no nā ʻōnaehana hoʻokele uila, inverters, a me nā loina.

Pūnaehana ikehu hou hou:Pono no ka hoʻomohala ʻana i nā mea hoʻololi mana kūpono no ka lā, makani, a me nā ʻōnaehana mālama ikehu.

Aerospace a me ka pale:Hoʻohana ʻia i nā ʻāpana kiʻekiʻe a me ka mana kiʻekiʻe, me nā ʻōnaehana radar a me nā kamaʻilio satellite.

Nā Pūnaehana Mana Hana:Kākoʻo i nā mea ʻike kiʻekiʻe a me nā mea hoʻokele i nā kaiapuni koi.

Waiwai

conductivity.
Koho Anawaena: 2-iniha, 3-iniha, 4-iniha, a me 6-iniha.
Mānoanoa:> 10mm, e hōʻoia ana i nā mea nui no ka ʻoki ʻana a me ka hana ʻana.
ʻAno: Dummy Grade, hoʻohana nui ʻia no ka hoʻāʻo ʻana a me ka hoʻomohala ʻana i nā mea hana ʻole.
ʻAno lawe: N-type, e hoʻopololei ana i ka mea no nā mea mana kiʻekiʻe.
Thermal Conductivity: Maikaʻi, kūpono no ka hoʻoheheʻe wela maikaʻi i ka uila uila.
Resistivity: Haʻahaʻa resistivity, hoʻonui i ka conductivity a me ka pono o nā mea hana.
Ka ikaika Mechanical: Kiʻekiʻe, e hōʻoiaʻiʻo ana i ka lōʻihi a me ka paʻa ma lalo o ke koʻikoʻi a me ke kiʻekiʻe kiʻekiʻe.
Nā Manaʻo Optical: Māmā ma ka laulā UV-ʻike ʻia, kūpono ia no nā noi ʻike ʻike.
Defect Density: Haʻahaʻa, hāʻawi i ke ʻano kiʻekiʻe o nā mea hana i hana ʻia.
SiC ingot kikoʻī
Papa: Hana Hana;
Nui: 6 iniha;
Anawaena: 150.25mm +0.25:
Mānoanoa: >10mm;
Kūlana ʻili: 4° i ka<11-20>+0.2°:
Kūlana palahalaha mua: <1-100>+5°:
Ka lōʻihi pālahalaha mua:47.5mm+1.5;
Kū'ē: 0.015-0.02852:
Micropipe: <0.5;
BPD: <2000;
TSD: <500;
Nā wahi polytype : ʻAʻohe;
Fdge indents :<3,:lmm laula a me ka hohonu;
Nā ʻaoʻao Qracks: 3,
Hoʻopili: Wafer pahu;
No nā kauoha nui a i ʻole nā ​​hana maʻamau, ʻokoʻa paha ke kumu kūʻai. E ʻoluʻolu e kelepona i kā mākou keʻena kūʻai aku no kahi ʻōlelo kikoʻī e pili ana i kāu mau koi a me ka nui.

Kiʻi kikoʻī

SiC Ingot11
SiC Ingot14
SiC Ingot12
SiC Ingot15

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