ʻO SiC Ingot 4H ʻano Dia 4 iniha 6 ʻīniha mānoanoa 5-10mm Research / Dummy Grade

ʻO SiC Ingot 4H ʻano Dia 4 inihi 6 ʻīniha mānoanoa 5-10mm Noiʻi / Dummy Grade Hōʻikeʻike kiʻi

ʻO ka wehewehe pōkole:

Ua puka mai ʻo Silicon Carbide (SiC) ma ke ʻano he mea koʻikoʻi i nā noi uila a me ka optoelectronic ma muli o kāna mau pono uila, wela, a me nā mea hana. ʻO ka 4H-SiC Ingot, loaʻa i nā anawaena o 4-ʻīniha a me 6-ʻīniha me ka mānoanoa o 5-10 mm, he huahana kumu no ka noiʻi a me ka hoʻomohala ʻana a i ʻole ma ke ʻano he dummy-grade. Hoʻolālā ʻia kēia ingot e hāʻawi i nā mea noiʻi a me nā mea hana me nā substrates SiC kiʻekiʻe i kūpono no ka hana ʻana i nā mea hana prototype, nā haʻawina hoʻokolohua, a i ʻole ka calibration a me nā kaʻina hoʻāʻo. Me kāna ʻano aniani hexagonal kū hoʻokahi, hāʻawi ka 4H-SiC ingot i ka hoʻohana ākea i ka uila uila, nā mea uila kiʻekiʻe, a me nā ʻōnaehana pale radiation.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Waiwai

1. Hoʻomoe Crystal a me ka hoʻonohonoho ʻana
Polytype: 4H (hana hexagonal)
Nā Lattice mau:
a = 3.073 Å
c = 10.053 Å
Kūlana: ʻO ka maʻamau [0001] (C-plane), akā loaʻa pū kekahi mau kuhikuhi e like me [11\overline{2}0] (A-plane) ma ke noi.

2. Ana Kino
anawaena:
Nā koho maʻamau: 4 iniha (100 mm) a me 6 ʻīniha (150 mm)
mānoanoa:
Loaʻa i ka laulā o 5-10 mm, hiki ke hoʻopili ʻia ma muli o nā koi noi.

3. Pono Uila
ʻAno Doping: Loaʻa i ka intrinsic (semi-insulating), n-type (doped me ka nitrogen), a i ʻole p-type (doped me ka alumini a boron).

4. Na Waiwai a me Mechanical
ʻO ka Thermal Conductivity: 3.5-4.9 W/cm·K ma ka lumi wela, hiki ke hoʻopau maikaʻi i ka wela.
ʻO ka paʻakikī: ʻO ka pālākiō Mohs 9, e hana ana i ka SiC lua wale nō i ke daimana i ka paʻakikī.

ʻĀpana	Nā kikoʻī	Unite
ʻAno ulu	PVT (Ka lawe ʻana i ka mahu kino)
Anawaena	50.8 ± 0.5 / 76.2 ± 0.5 / 100.0 ± 0.5 / 150 ± 0.5	mm
Polytype	4H / 6H (50.8 mm), 4H (76.2 mm, 100.0 mm, 150 mm)
Kūlana ʻili	0.0˚ / 4.0˚ / 8.0˚ ± 0.5˚ (50.8 mm), 4.0˚ ± 0.5˚ (nā mea ʻē aʻe)	degere
ʻAno	N-ʻano
mānoanoa	5-10 / 10-15 / >15	mm
Kūlana Pāha mua	(10-10) ± 5.0˚	degere
Ka lōʻihi pālahalaha	15.9 ± 2.0 (50.8 mm), 22.0 ± 3.5 (76.2 mm), 32.5 ± 2.0 (100.0 mm), 47.5 ± 2.5 (150 mm)	mm
Kūlana Pāpā lua	90˚ CCW mai ka hoʻonohonoho ʻana ± 5.0˚	degere
Ka lōʻihi pālahalaha lua	8.0 ± 2.0 (50.8 mm), 11.2 ± 2.0 (76.2 mm), 18.0 ± 2.0 (100.0 mm), ʻAʻohe (150 mm)	mm
Papa	Noiʻi / Dummy

Nā noi

1. Noiʻi a hoʻomohala

ʻO ka noiʻi-grade 4H-SiC ingot he mea kūpono ia no nā keʻena hoʻonaʻauao a me nā ʻoihana ʻenehana i kālele ʻia i ka hoʻomohala ʻana i nā hāmeʻa e pili ana iā SiC. Hiki i kona ʻano crystalline maikaʻi ke hoʻokolohua pololei i nā waiwai SiC, e like me:
Haʻawina hoʻokele kaʻa.
ʻO nā ʻenehana hōʻemi a me ka hōʻemi ʻana.
Hoʻonui i nā kaʻina hana ulu epitaxial.

2. Dummy substrate
Hoʻohana nui ʻia ka ingot dummy-grade i ka hoʻāʻo, calibration, a me nā noi prototyping. He kumu kūʻai kūpono no:
Kaʻina hana hoʻohālikelike ʻano hoʻohālikelike i loko o Chemical Vapor Deposition (CVD) a i ʻole Physical Vapor Deposition (PVD).
Ka loiloi ʻana i nā kaʻina hana etching a polishing i nā kaiapuni hana.

3. Mea uila mana
Ma muli o kāna bandgap ākea a me ka conductivity thermal kiʻekiʻe, ʻo 4H-SiC kahi pōhaku kihi no ka uila uila, e like me:
Nā MOSFET kiʻekiʻe-volt.
Schottky Barrier Diodes (SBDs).
ʻO Junction Field-Effect Transistors (JFETs).
Loaʻa nā noi i nā mea hoʻohuli kaʻa uila, nā mea hoʻohuli i ka lā, a me nā grids akamai.

4. Nā mea hana kiʻekiʻe
ʻO ka mobility electron kiʻekiʻe o ka mea a me nā poho capacitance haʻahaʻa e kūpono ia no:
Nā transistors Radio Frequency (RF).
Pūnaehana kamaʻilio ʻole, me ka ʻōnaehana 5G.
Aerospace a me nā noi pale e koi ana i nā ʻōnaehana radar.

5. Nā Pūnaehana Kū'ē Kū'ē
ʻO ke kū'ē kū'ē o 4H-SiC i ka pōʻino radiation he mea nui ia i nā wahi paʻakikī e like me:
Lako kaawale.
Nā lako kiaʻi ʻana o nā mea kanu mana nuklea.
Nā mea uila-ʻoihana koa.

6. Nā ʻenehana hou
Ke holomua nei ka ʻenehana SiC, ke hoʻomau nei kāna mau noi i nā māla e like me:
Photonics a me quantum computing noiʻi.
Ka hoʻomohala ʻana i nā LED mana kiʻekiʻe a me nā ʻike UV.
Hoʻohui i nā heterostructure semiconductor wide-bandgap.
Nā pōmaikaʻi o 4H-SiC Ingot
Maʻemaʻe Kiʻekiʻe: Hana ʻia ma lalo o nā kūlana koʻikoʻi e hōʻemi i nā haumia a me nā hemahema.
Scalability: Loaʻa i nā anawaena 4-inch a me 6-inch e kākoʻo i nā pono maʻamau a me ka noiʻi.
Versatility: Hiki ke hoʻololi i nā ʻano doping like ʻole a me nā kuhikuhi e hoʻokō i nā koi noi kikoʻī.
Hana Paʻa: ʻOi aku ka paʻa wela a me ka mīkini ma lalo o nā kūlana hana koʻikoʻi.

Ka hopena

ʻO ka 4H-SiC ingot, me kāna mau waiwai kūʻokoʻa a me nā noi ākea, ke kū nei i mua o nā mea hou no nā mea uila a me nā optoelectronics. Inā hoʻohana ʻia no ka noiʻi hoʻonaʻauao, prototyping ʻoihana, a i ʻole ka hana ʻana i nā mea hana kiʻekiʻe, hāʻawi kēia mau ingots i kahi kahua hilinaʻi no ka pana ʻana i nā palena o ka ʻenehana. Me nā ʻano kikoʻī, doping, a me nā kuhikuhi, ua hoʻonohonoho ʻia ka ingot 4H-SiC e hoʻokō i nā koi e ulu nei o ka ʻoihana semiconductor.
Inā makemake ʻoe e aʻo hou a i ʻole ke kau ʻana i kahi kauoha, e ʻoluʻolu e hele mai no nā kikoʻī kikoʻī a me ke kūkākūkā ʻenehana.