ʻAno SiC Ingot 4H Dia 4 ʻīniha 6 ʻīniha Mānoanoa 5-10mm Papa Noiʻi / Dummy

ʻO SiC Ingot 4H ʻano Dia 4inch 6inch Mānoanoa 5-10mm Papa Noiʻi / Dummy Kiʻi i Hōʻike ʻia

Wehewehe Pōkole:

Ua kū mai ʻo Silicon Carbide (SiC) ma ke ʻano he mea nui i nā noi uila a me nā optoelectronic holomua ma muli o kona mau waiwai uila, wela, a me ka mechanical kiʻekiʻe. ʻO ka 4H-SiC Ingot, i loaʻa i nā diameters o 4-'īniha a me 6-'īniha me ka mānoanoa o 5-10 mm, he huahana kumu no nā kumu noiʻi a me ka hoʻomohala ʻana a i ʻole ma ke ʻano he mea dummy-grade. Ua hoʻolālā ʻia kēia ingot e hāʻawi i nā mea noiʻi a me nā mea hana me nā substrates SiC kiʻekiʻe e kūpono no ka hana ʻana i nā hāmeʻa prototype, nā haʻawina hoʻokolohua, a i ʻole nā kaʻina hana calibration a me ka hoʻāʻo ʻana. Me kona ʻano kristal hexagonal kū hoʻokahi, hāʻawi ka 4H-SiC ingot i ka hoʻohana ākea i nā uila mana, nā hāmeʻa alapine kiʻekiʻe, a me nā ʻōnaehana pale radiation.

E leka uila mai iā mākou

Nā hiʻohiʻona

Nā Waiwai

1. ʻAno Crystal a me ke kuhikuhi ʻana
Polytype: 4H (ʻano hexagonal)
Nā Kūlana Paʻa o ka Lattice:
a = 3.073 Å
c = 10.053 Å
Kuhikuhi: ʻO ka maʻamau [0001] (C-plane), akā loaʻa pū kekahi mau kuhikuhi ʻē aʻe e like me [11\overline{2}0] (A-plane) ma ke noi ʻana.

2. Nā Ana Kino
Anawaena:
Nā koho maʻamau: 4 ʻīniha (100 mm) a me 6 ʻīniha (150 mm)
Mānoanoa:
Loaʻa i ka laulā o 5-10 mm, hiki ke hoʻopilikino ʻia ma muli o nā koi o ka noi.

3. Nā Waiwai Uila
ʻAno Doping: Loaʻa i loko o ka intrinsic (semi-insulating), ʻano-n (doped me ka naikokene), a i ʻole ʻano-p (doped me ka alumini a boron paha).

4. Nā Waiwai Wela a me nā Waiwai Mekanika
Alakaʻi Wela: 3.5-4.9 W/cm·K ma ka mahana o ka lumi, e hiki ai ke hoʻopuehu maikaʻi loa ʻia.
Paʻakikī: ʻO ka unahi Mohs he 9, e hoʻolilo ana iā SiC i ka lua wale nō ma hope o ka daimana ma ka paʻakikī.

Palena	Nā kikoʻī	ʻĀpana
ʻAno ulu	PVT (Halihali Koko Kino)
Anawaena	50.8 ± 0.5 / 76.2 ± 0.5 / 100.0 ± 0.5 / 150 ± 0.5	mm
Polytype	4H / 6H (50.8 mm), 4H (76.2 mm, 100.0 mm, 150 mm)
Kūlana ʻIli	0.0˚ / 4.0˚ / 8.0˚ ± 0.5˚ (50.8 mm), 4.0˚ ± 0.5˚ (nā mea ʻē aʻe)	kekelē
ʻAno	ʻAno-N
Mānoanoa	5-10 / 10-15 / >15	mm
Kūlana Pālahalaha Mua	(10-10) ± 5.0˚	kekelē
Ka Lōʻihi Palahalaha Mua	15.9 ± 2.0 (50.8 mm), 22.0 ± 3.5 (76.2 mm), 32.5 ± 2.0 (100.0 mm), 47.5 ± 2.5 (150 mm)	mm
Kūlana Pālahalaha Lua	90˚ CCW mai ke kuhikuhi ʻana ± 5.0˚	kekelē
Ka Lōʻihi Pālahalaha Lua	8.0 ± 2.0 (50.8 mm), 11.2 ± 2.0 (76.2 mm), 18.0 ± 2.0 (100.0 mm), ʻAʻohe (150 mm)	mm
Papa	Noiʻi / Dummy

Nā noi

1. Noiʻi a me ka Hoʻomohala ʻana

He kūpono ka ingot 4H-SiC papa noiʻi no nā keʻena hoʻokolohua kula a me nā ʻoihana e kālele ana i ka hoʻomohala ʻana i nā hāmeʻa e pili ana i ka SiC. ʻO kona ʻano crystalline kiʻekiʻe e hiki ai ke hoʻokolohua pololei i nā waiwai SiC, e like me:
Nā haʻawina neʻe ʻana o ka mea lawe.
ʻAno kīnā a me nā ʻano hana hoʻēmi.
Ka hoʻonui ʻana i nā kaʻina hana ulu epitaxial.

2. Mea Hoʻoheheʻe Dummy
Hoʻohana nui ʻia ka ingot dummy-grade i nā hoʻāʻo, calibration, a me nā noi prototyping. He koho kūpono ia no:
Ka hoʻoponopono ʻana o nā palena hana ma ka Chemical Vapor Deposition (CVD) a i ʻole Physical Vapor Deposition (PVD).
Ke loiloi ʻana i nā kaʻina hana etching a me ka polishing i nā wahi hana.

3. Nā Uila Mana
Ma muli o kona bandgap ākea a me ke alakaʻi wela kiʻekiʻe, ʻo 4H-SiC kahi kihi no nā mea uila mana, e like me:
Nā MOSFET uila kiʻekiʻe.
Nā Diode Pale Schottky (SBD).
Nā Transistors Hopena Kahua Huina (JFET).
ʻO nā noi e pili ana i nā inverters kaʻa uila, nā inverters solar, a me nā grids akamai.

4. Nā Mea Hana Alapine Kiʻekiʻe
ʻO ka neʻe kiʻekiʻe o ka electron a me nā pohō capacitance haʻahaʻa o ka mea e kūpono ai no:
Nā transistors alapine (frequency) lekiō.
Nā ʻōnaehana kamaʻilio uea ʻole, me ke kahua 5G.
Nā noi aerospace a me nā pale kaua e pono ai nā ʻōnaehana radar.

5. Nā ʻōnaehana pale i ka radiation
ʻO ke kūpaʻa kūlohelohe o 4H-SiC i ka hōʻino ʻia o ka radiation e lilo ia i mea nui loa i nā wahi ʻino e like me:
Nā lako hana no ka ʻimi ʻana i ka lewa.
Nā lako hana nānā i nā hale hana mana nukelea.
Nā mea uila pae koa.

6. Nā ʻenehana hou
I ka holomua ʻana o ka ʻenehana SiC, ke hoʻomau nei kāna mau noi i ka ulu ʻana i nā kahua e like me:
ʻO ka noiʻi Photonics a me ka helu quantum.
Ka hoʻomohala ʻana o nā LED mana kiʻekiʻe a me nā mea ʻike UV.
Hoʻohui ʻia i loko o nā heterostructures semiconductor wide-bandgap.
Nā Pōmaikaʻi o ka 4H-SiC Ingot
Maʻemaʻe Kiʻekiʻe: Hana ʻia ma lalo o nā kūlana koʻikoʻi e hōʻemi i nā haumia a me ka nui o nā kīnā.
Ka Hoʻonui ʻana: Loaʻa i nā anawaena 4-ʻīniha a me 6-ʻīniha e kākoʻo i nā pono maʻamau o ka ʻoihana a me nā pono noiʻi.
Versatility: Hiki ke hoʻololi i nā ʻano doping like ʻole a me nā kuhikuhi e hoʻokō ai i nā koi noi kikoʻī.
Hana Paʻa: Paʻa wela a me ka mechanical kiʻekiʻe ma lalo o nā kūlana hana koʻikoʻi.

Hopena

ʻO ka ingot 4H-SiC, me kona mau waiwai kūikawā a me nā noi ākea, kū i mua o ka hana hou ʻana o nā mea no nā mea uila a me nā optoelectronics o ka hanauna e hiki mai ana. Inā hoʻohana ʻia no ka noiʻi kula, prototyping ʻoihana, a i ʻole ka hana ʻana i nā mea holomua, hāʻawi kēia mau ingot i kahi kahua hilinaʻi no ka hoʻokuke ʻana i nā palena o ka ʻenehana. Me nā ana i hiki ke hoʻopilikino ʻia, ka doping, a me nā kuhikuhi, ua hana ʻia ka ingot 4H-SiC e hoʻokō i nā koi e ulu nei o ka ʻoihana semiconductor.
Inā makemake ʻoe e aʻo hou aʻe a i ʻole e kau i kahi kauoha, e ʻoluʻolu e hoʻokaʻaʻike mai iā mākou no nā kikoʻī kikoʻī a me ke kūkākūkā loea.