ʻO ka umu ulu SiC Ingot no nā ʻano hana TSSG/LPE Crystal SiC nui-diameter

1. ʻOi aku ka maikaʻi o ka ʻenehana
1.1 Hoʻolālā Hana like ʻole i hoʻohui ʻia
Hoʻohui hou kēia ʻōnaehana ulu ʻano wai SiC i nā ʻenehana ulu kristal TSSG a me LPE. Hoʻohana ka ʻōnaehana TSSG i ka ulu ʻana o ka hopena top-seeded me ka convection melt pololei a me ka kaohi gradient mahana (ΔT≤5 ℃/cm), e hiki ai ke ulu paʻa o nā ʻano SiC nui 4-8 ʻīniha me nā hua holo hoʻokahi o 15-20kg no nā kristal 6H/4H-SiC. Hoʻohana ka ʻōnaehana LPE i ka haku mele solvent i hoʻomaikaʻi ʻia (ʻōnaehana alloy Si-Cr) a me ka kaohi supersaturation (± 1%) e ulu i nā papa epitaxial mānoanoa kiʻekiʻe me ka density kīnā <100/cm² ma nā mahana haʻahaʻa (1500-1800 ℃).

1.2 ʻŌnaehana Mana Akamai
Ua hoʻolako ʻia me ka mana ulu akamai o ka hanauna 4 e hōʻike ana i:
• Nānā ʻana i loko o ka wahi multi-spectral (400-2500nm ka laulā o ka nalu)
• ʻIke ʻana i ka pae heheʻe ma muli o ka laser (± 0.01mm pololei)
• Ka mana o ke anawaena pani ʻia ma muli o CCD (<±1mm fluctuation)
• Hoʻonui ʻia ke ʻano o ka ulu ʻana e AI (15% mālama ikehu)

2. Nā Pōmaikaʻi Hana Hana
2.1 Nā Ikaika Koʻikoʻi o ke Kaʻina Hana TSSG
• Ka hiki ke nui: Kākoʻo i ka ulu ʻana o ke aniani a hiki i ka 8-'īniha me ke ʻano like o ke anawaena >99.5%
• ʻOi aku ka maikaʻi o ke kristalina: Ka nui o ka neʻe ʻana <500/cm², ka nui o ka micropipe <5/cm²
• ʻAno like o ka doping: <8% ʻano kū'ē o ke ʻano n (nā wafers 4-'īniha)
• Ka wikiwiki o ka ulu ʻana i hoʻonohonoho pono ʻia: Hiki ke hoʻololi ʻia he 0.3-1.2mm/h, 3-5× wikiwiki ma mua o nā ʻano hana vapor-phase

2.2 Nā Ikaika Koʻikoʻi o ke Kaʻina Hana LPE
• Epitaxy kīnā haʻahaʻa loa: Ka nui o ke kūlana o ka interface <1×10¹¹cm⁻²·eV⁻¹
• Ka mana mānoanoa pololei: 50-500μm epi-papa me ka loli mānoanoa <±2%
• Ka pono o ka mahana haʻahaʻa: 300-500 ℃ haʻahaʻa ma mua o nā kaʻina hana CVD
• Ka ulu ʻana o ka ʻōnaehana paʻakikī: Kākoʻo i nā hui pn, nā superlattices, a pēlā aku.

3. Nā Pōmaikaʻi Hana Hana
3.1 Ka Mana ʻana i nā Kumukūʻai
• 85% ka hoʻohana ʻana i nā mea maka (vs. 60% maʻamau)
• 40% emi ka hoʻohana ʻana i ka ikehu (hoʻohālikelike ʻia me HVPE)
• 90% ka manawa hana o nā lako (hoʻemi ka hoʻolālā modular i ka manawa hana ʻole)

3.2 Hōʻoiaʻiʻo Kūlana
• 6σ ka mana hana (CPK>1.67)
• ʻIke ʻana i nā hemahema ma ka pūnaewele (hoʻonā 0.1μm)
• Ka hiki ke hahai ʻia ka ʻikepili hana piha (2000+ mau palena manawa maoli)

3.3 Ka hiki ke hoʻonui ʻia
• Kūlike me nā ʻano polytypes 4H/6H/3C
• Hiki ke hoʻonui ʻia i nā modula hana 12-'īniha
• Kākoʻo i ka hoʻohuihui hetero-SiC/GaN

4. Nā Pōmaikaʻi Noi ʻOihana
4.1 Nā Mea Hana Mana
• Nā substrates haʻahaʻa-resistivity (0.015-0.025Ω·cm) no nā mea hana 1200-3300V
• Nā substrates semi-insulating (>10⁸Ω·cm) no nā noi RF

4.2 Nā ʻenehana hou
• Kamaʻilio Quantum: Nā mea hoʻoheheʻe walaʻau haʻahaʻa loa (1/f walaʻau <-120dB)
• Nā wahi ʻino loa: Nā kristal pale i ka radiation (<5% degradation ma hope o ka hoʻomālamalama ʻana o 1 × 10¹⁶n/cm²)