ʻO ka umu hoʻoulu ʻana o SiC Ingot no nā ʻano ʻano TSSG/LPE ʻĀpana Nui

SiC Ingot Growth Furnace no ka nui-diameter SiC Crystal TSSG/LPE Methods Featured Image

ʻO ka wehewehe pōkole:

Hoʻohana ka XKH's liquid-phase silicon carbide ingot growth furnace i ka honua alakaʻi TSSG (Top-Seeded Solution Growth) a me LPE (Liquid Phase Epitaxy) ʻenehana, i hoʻolālā kūikawā ʻia no ka ulu ʻana o ka kristal kiʻekiʻe SiC hoʻokahi. Hiki i ke kaʻina TSSG ke ulu o 4-8 iniha nui-diameter 4H/6H-SiC ingots ma o ka gradient wela kūpono a me ka hoʻoulu wikiwiki ʻana i nā hua, aʻo ke ala LPE e hoʻoikaika i ka ulu ʻana o nā papa epitaxial SiC ma nā haʻahaʻa haʻahaʻa, kūpono loa no nā papa epitaxial mānoanoa ultra-low defect. Ua hoʻohana maikaʻi ʻia kēia ʻōnaehana ulu silicon carbide ingot i ka hana ʻenehana o nā kristal SiC like ʻole me ka ʻano 4H / 6H-N a me ke ʻano insulating 4H / 6H-SEMI, e hāʻawi ana i nā hoʻonā piha mai nā mea hana i nā kaʻina hana.

E hoʻouna i ka leka uila iā mākou

Nā hiʻohiʻona

Kumu Hana

ʻO ke kumu nui o ka ulu ʻana o ka silicon carbide ingot e pili ana i ka hoʻoheheʻe ʻana i nā mea maka SiC maʻemaʻe kiʻekiʻe i nā metala hoʻoheheʻe ʻia (e laʻa, Si, Cr) ma 1800-2100 ° C e hana ai i nā hāʻina saturated, a ukali ʻia e ka ulu kuhikuhi ʻana o nā kristal hoʻokahi SiC ma nā hua kristal ma o ka hoʻoponopono ʻana i ka mahana wela a me ka hoʻoponopono supersaturation. He mea kūpono kēia ʻenehana no ka hana ʻana i ka maʻemaʻe kiʻekiʻe (> 99.9995%) 4H / 6H-SiC hoʻokahi kristal me ka haʻahaʻa haʻahaʻa haʻahaʻa (<100/cm²), e hālāwai ana i nā koi substrate ikaika no ka uila uila a me nā mea RF. Hiki i ka ʻōnaehana hoʻoulu wai-wai ke kaohi pono ʻana o ke ʻano conductivity crystal (N/P type) a me ka resistivity ma o ka hoʻohui ʻana i ka hopena i hoʻopaʻa ʻia a me nā ʻāpana ulu.

Nā ʻāpana kumu

1. Pūnaehana Crucible Kūikawā: High-purity graphite / tantalum composite crucible, pale wela> 2200 ° C, kū'ē i ka SiC melt corrosion.

2. Pūnaehana Hoʻolālā Multi-Zone: Hoʻohui i ke kū'ē / induction hoʻomehana me ka pololei o ka mana wela o ± 0.5 ° C (1800-2100 ° C).

3. Pūnaehana Motion Precision: ʻElua hoʻopaʻa hoʻopaʻa ʻia no ka hoʻololi ʻana i nā hua (0-50rpm) a me ka hāpai ʻana (0.1-10mm / h).

4. Pūnaehana Mana Manaʻo: ʻO ka pale argon / nitrogen hoʻomaʻemaʻe kiʻekiʻe, hiki ke hoʻololi i ke kaomi hana (0.1-1atm).

5. Pūnaehana Mana Mana Manaʻo: PLC + ʻoihana PC redundant mana me ka nānā ʻana i ka ulu ʻana o ka manawa maoli.

6. Efficient Cooling System: Graded water cooling design e hōʻoia i ka lōʻihi o ka hana paʻa.

TSSG vs. LPE Hoʻohālikelike

Nā hiʻohiʻona	Keʻano TSSG	LPE Hana
Hoʻonui Temp	2000-2100°C	1500-1800°C
Laki Ulu	0.2-1mm/h	5-50μm/h
Nui Crystal	4-8 mau ʻīniha ʻīniha	50-500μm epi-papa
Noi Nui	Hoʻomākaukau substrate	Nā ʻāpana epi mana
ʻAʻe ʻino	<500/cm²	<100/cm²
Nā Polytypes kūpono	4H/6H-SiC	4H/3C-SiC

Nā noi nui

1. Mana Electronics: 6-inch 4H-SiC substrates no 1200V + MOSFETs / diodes.

2. 5G RF Mea Hana: Semi-insulating SiC substrates no ke kahua kahua PA.

3. Nā noi EV: Ultra-mānoanoa (> 200μm) epi-layers no nā modules automotive-grade.

4. PV Inverters: Haʻahaʻa-defect substrates e hiki ai >99% hoʻololi pono.

Pono Pono

1. Ke kūlana ʻenehana
1.1 Hoʻolālā Hoʻohui Nui
Hoʻohui hou ʻia kēia ʻōnaehana ulu SiC ingot wai-wai i nā ʻenehana ulu kristal TSSG a me LPE. Hoʻohana ka ʻōnaehana TSSG i ka ulu ʻana o ka hopena ʻoi loa me ka convection melt convection a me ka mana gradient wela (ΔT≤5 ℃/cm), hiki i ka ulu paʻa o 4-8 iniha nui-diameter SiC ingots me nā hua holo hoʻokahi o 15-20kg no nā kristal 6H/4H-SiC. Hoʻohana ka ʻōnaehana LPE i ka haku mele ʻana i hoʻopaʻa ʻia (Si-Cr alloy system) a me ka mana supersaturation (±1%) e ulu i nā papa epitaxial mānoanoa kiʻekiʻe me ka defect density <100/cm² ma nā haʻahaʻa haʻahaʻa (1500-1800 ℃).

1.2 Pūnaehana Mana Mana
Hoʻolako ʻia me 4th-generation smart growth control e hōʻike ana:
• Ka nānā 'ana i loko o kahi 'ano he nui (400-2500nm ka lō'ihi hawewe)
• ʻIke pae hoʻoheheʻe ma muli o ka laser (± 0.01mm pololei)
• Ka mana hoʻopaʻa hoʻopaʻa puka paʻa ke anawaena ma ka CCD (<± 1mm fluctuation)
• ʻO ka hoʻonui ʻana i ka hoʻonui ʻana i ka mana o AI (15% mālama ikehu)

2. Ka Hana Hana Pono
2.1 ʻO ke ʻano TSSG ʻano ikaika
• Hiki i ka nui-nui: Kākoʻo a hiki i ka 8-ʻīniha ka ulu ʻana o ke aniani me ka >99.5% anawaena like ʻole.
• ʻOi aku ka nui o ka crystallinity: Dislocation density <500/cm², micropipe density <5/cm²
• Kaulike o ka Doping: <8% n-type resistivity variation (4-inihi wafers)
• ʻOi aku ka wikiwiki o ka ulu ʻana: 0.3-1.2mm/h hiki ke hoʻololi ʻia, ʻoi aku ka wikiwiki o 3-5x ma mua o nā ʻano hana mahu.

2.2 ʻO ke ala LPE nā ikaika kumu
• Epitaxy defect haʻahaʻa haʻahaʻa loa: ʻano mānoanoa kūlana waena <1×10¹¹cm⁻²·eV⁻¹
• Ka mana mānoanoa pololei: 50-500μm epi-papa me <± 2% o ka mānoanoa
• Ka hana haʻahaʻa haʻahaʻa: 300-500 ℃ haʻahaʻa ma mua o nā kaʻina CVD
• Ka ulu ʻana o ka hale paʻakikī: Kākoʻo i nā hui pn, superlattices, etc.

3. Nā Pono Hana Hana
3.1 Ka Hoomalu Kumukuai
• 85% ka hoʻohana waiwai maka (vs. 60% maʻamau)
• 40% emi iho ka ikehu (hoʻohālikelike ʻia me HVPE)
• 90% mea hana uptime (modular design hoemi iho downtime)

3.2 Hōʻoia maikaʻi
• 6σ ka mana kaʻina hana (CPK>1.67)
• Ka ʻike hemahema ma ka pūnaewele (0.1μm hoʻonā)
• Ka ʻikepili kaʻina piha (2000+ mau ʻāpana manawa maoli)

3.3 Scalability
• He kūpono me 4H/6H/3C polytypes
• Hiki ke hoʻonui i nā modula kaʻina hana 12-inch
• Kākoʻo iā SiC/GaN hetero-integration

4. Nā Pono Hana Hana
4.1 Mea Mana Mana
• Nā pani haʻahaʻa haʻahaʻa (0.015-0.025Ω·cm) no nā mea hana 1200-3300V
• Nā mea hoʻopili semi-insulating (>10⁸Ω·cm) no nā noi RF

4.2 Nā ʻenehana hou
• Kūkākūkā nui: Nā pani leo haʻahaʻa haʻahaʻa (1/f leo<-120dB)
• Nā kaiapuni loa: ʻO nā kristal kū i ka pāhawewe (<5% hoʻohaʻahaʻa ma hope o ka hoʻomālamalama ʻana o 1×10¹⁶n/cm²)

Nā lawelawe XKH

1. Nā lako i hoʻopilikino ʻia: Hoʻonohonoho ʻia nā ʻōnaehana TSSG / LPE.
2. Hoʻomaʻamaʻa Kaʻina Hana: Nā papahana hoʻomaʻamaʻa ʻenehana piha.
3. Kākoʻo ma hope o ke kūʻai aku: 24/7 pane ʻenehana a mālama.
4. Turnkey Solutions: ʻO ka lawelawe holoʻokoʻa holoʻokoʻa mai ka hoʻokomo ʻana i ka hoʻokō ʻana.
5. Mea lako: 2-12 inch SiC substrates / epi-wafers loaʻa.

Loaʻa nā pōmaikaʻi nui:
• A hiki i ka 8-inihi ka hiki ke ulu.
• Ka like ole o ka resistivity <0.5%.
• ka manawa hana o ka lako >95%.
• 24/7 kākoʻo ʻenehana.