SiC substrate Dia200mm 4H-N a me HPSI Silicon carbide

ʻO ka wehewehe pōkole:

ʻO Silicon carbide substrate (SiC wafer) kahi mea semiconductor ākea-bandgap me nā waiwai kino a me nā mea kemika maikaʻi loa, ʻoi aku ka maikaʻi ma nā wahi wela kiʻekiʻe, kiʻekiʻe-frequency, mana kiʻekiʻe, a me nā kaiapuni kiʻekiʻe. ʻO 4H-V kekahi o nā hale aniani o ka carbide silika. Hoʻohui ʻia, loaʻa i nā substrates SiC ka conductivity thermal maikaʻi, ʻo ia ka mea hiki iā lākou ke hoʻopau pono i ka wela i hana ʻia e nā mea hana i ka wā o ka hana, e hoʻonui hou i ka hilinaʻi a me ke ola o nā mea hana.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

ʻO 4H-N a me HPSI he polytype o ka silicon carbide (SiC), me kahi ʻano lattice crystal i loaʻa i nā ʻāpana hexagonal i hana ʻia me ʻehā kalapona a me ʻehā mau silikona. Hāʻawi kēia ʻano hana i ka mea me ka mobility electron maikaʻi loa a me nā hiʻohiʻona o ka puʻupuʻu. Ma waena o nā polytypes SiC a pau, hoʻohana nui ʻia ʻo 4H-N a me HPSI i ke kahua o ka uila uila ma muli o kona kaulike electron a me ka neʻe ʻana o ka lua a me ka conductivity thermal kiʻekiʻe.

ʻO ka puka ʻana mai o 8inch SiC substrates e hōʻike ana i kahi holomua nui no ka ʻoihana semiconductor mana. Loaʻa i nā mea semiconductor kuʻuna silicon-based i kahi hāʻule nui o ka hana ma lalo o nā kūlana koʻikoʻi e like me nā wela kiʻekiʻe a me nā voltages kiʻekiʻe, akā hiki i nā substrate SiC ke mālama i kā lākou hana maikaʻi loa. Ke hoʻohālikelike ʻia me nā substrates liʻiliʻi, hāʻawi nā substrates 8inch SiC i kahi ʻāpana hana hoʻokahi ʻāpana nui, ʻo ia ka mea e unuhi i ka ʻoi aku ka maikaʻi o ka hana ʻana a me nā kumukūʻai haʻahaʻa, koʻikoʻi no ka hoʻokele ʻana i ke kaʻina hana kālepa o ka ʻenehana SiC.

ʻO ka ʻenehana ulu no ka 8inch silicon carbide (SiC) substrates e koi i ka pololei kiʻekiʻe a me ka maʻemaʻe. Hoʻopili pololei ka maikaʻi o ka substrate i ka hana o nā mea hana ma hope, no laila pono nā mea hana e hoʻohana i nā ʻenehana holomua e hōʻoia i ka hemolele crystalline a me ka haʻahaʻa haʻahaʻa haʻahaʻa o nā substrates. Hoʻopili maʻamau kēia i nā kaʻina hoʻoheheʻe kemika paʻakikī (CVD) a me ka ulu ʻana o ke aniani pololei a me nā ʻenehana ʻoki. Hoʻohana nui ʻia nā substrates 4H-N a me HPSI SiC ma ke kahua o ka uila uila, e like me nā mea hoʻololi mana kiʻekiʻe, nā mea hoʻohuli traction no nā kaʻa uila, a me nā ʻōnaehana ikehu hou.

Hiki iā mākou ke hāʻawi iā 4H-N 8inch SiC substrate, nā māka like ʻole o nā wafers stock substrate. Hiki iā mākou ke hoʻonohonoho i ka hana maʻamau e like me kāu makemake. Welina nīnau!