SiC
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6 ma Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
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ʻO SiC Ingot 4H ʻano Dia 4 iniha 6 ʻīniha mānoanoa 5-10mm Research / Dummy Grade
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3 'īniha Maʻemaʻe Kiʻekiʻe (Undoped)Silicon Carbide Wafers Semi-Insulating Sic Substrates (HPSl)
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ʻO Sic Substrate Silicon Carbide Wafer 4H-N ʻAno Kiʻekiʻe Paʻa Paʻa Paʻa Kūʻai Kūʻai Kūʻai Nui
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2'īniha Silicon Carbide Wafer 6H-N Type Prime Grade Research Grade Dummy Grade 330μm 430μm Mānoanoa
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2 iniha kilikaka carbide substrate 6H-N ʻaoʻao ʻelua ʻaoʻao poni anawaena 50.8mm papa hana noiʻi papa
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N-Type SiC Composite Substrates Dia6inch High quality monocrystaline and low quality substrate
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Semi-Insulating SiC Composite Substrates Dia2inch 4inch 6inch 8inch HPSI
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N-Ano SiC ma Si Composite Substrates Dia6 iniha
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SiC substrate Dia200mm 4H-N a me HPSI Silicon carbide
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3inihi SiC substrate Production Dia76.2mm 4H-N
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SiC substrate P a me D papa Dia50mm 4H-N 2 iniha