SiC
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ʻO ka Silicon Carbide (SiC) Single-Crystal Substrate - 10 × 10mm Wafer
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ʻO ka wafer Epitaxial 4H-N HPSI SiC 6H-N 6H-P 3C-N SiC no MOS a i ʻole SBD
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ʻO ka Wafer Epitaxial SiC no nā mea hana mana - 4H-SiC, ʻano N, Low Defect Density
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ʻAno 4H-N SiC Epitaxial Wafer Kiʻekiʻe Voltage Kiʻekiʻe Frequency
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3 ʻīniha Kiʻekiʻe Maʻemaʻe (Undoped) Silicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)
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ʻO ka wafer substrate SiC 4H-N 8 ʻīniha Silicon Carbide Dummy Research grade 500um ka mānoanoa
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Hana noiʻi Wafer 4H-N/6H-N SiC Dummy grade Dia150mm Silicon carbide substrate
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ʻO ka wafer i uhi ʻia me Au, ka wafer sapphire, ka wafer silicon, ka wafer SiC, 2 ʻīniha 4 ʻīniha 6 ʻīniha, ka mānoanoa i uhi ʻia me ke gula 10nm 50nm 100nm
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C ʻano 2 ʻīniha 3 ʻīniha 4 ʻīniha 6 ʻīniha 8 ʻīniha
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2 ʻīniha Sic silicon carbide substrate 6H-N ʻAno 0.33mm 0.43mm ʻaoʻao pālua ka poli ʻana ʻO ka hoʻohana ʻana i ka mana wela kiʻekiʻe haʻahaʻa
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ʻO ka substrate SiC 3'iniha 350um ka mānoanoa HPSI ʻano Prime Grade Dummy grade
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Hiki i ka mānoanoa o Silicon Carbide SiC Ingot 6inch N type Dummy/prime grade ke hana maʻamau ʻia