SICOI (Silicon Carbide on Insulator) Wafers SiC Film ON Silicon

ʻO ka wehewehe pōkole:

ʻO nā wafers Silicon Carbide on Insulator (SICOI) he mau mea hoʻoheheʻe semiconductor e hiki mai ana e hoʻohui i nā waiwai kino a me ka uila o ka silicon carbide (SiC) me nā hiʻohiʻona hoʻokaʻawale uila koʻikoʻi o kahi papa insulating buffer, e like me ke silicon dioxide (SiO₂) a i ʻole silicon nitride (Si₃N₄). ʻO kahi wafer SICOI maʻamau i loko o kahi ʻāpana SiC epitaxial lahilahi, kahi kiʻiʻoniʻoni insulating waena, a me kahi substrate kumu kākoʻo, hiki iā ia ke silikona a i ʻole SiC.

E hoʻouna i ka leka uila iā mākou

Nā hiʻohiʻona

Kiʻi kikoʻī

Hoʻolauna i nā wafers Silicon Carbide on Insulator (SICOI).

Hoʻolālā ʻia kēia ʻano hybrid e hoʻokō i nā koi koʻikoʻi o nā mea uila uila kiʻekiʻe, kiʻekiʻe-frequency, a me ka wela wela. Ma ka hoʻokomo ʻana i kahi papa insulating, hoʻemi ʻo SICOI wafers i ka capacitance parasitic a hoʻopaʻa i ka leakage au, a laila e hōʻoiaʻiʻo ai i nā alapine hana kiʻekiʻe, ʻoi aku ka maikaʻi, a me ka hoʻokele wela. Hoʻolilo kēia mau pōmaikaʻi iā lākou i mea waiwai nui i nā ʻāpana e like me nā kaʻa uila, 5G telecommunication infrastructure, aerospace system, advanced RF electronics, a me MEMS sensor ʻenehana.

Ke Kumu Hana o SICOI Wafers

Hana ʻia nā wafers SICOI (Silicon Carbide on Insulator) ma o kahi holomuaka hoʻopaʻa ʻana i ka wafer a me ka hana ʻana:

ʻO ka ulu ʻana o ka substrate SiC- Hoʻomākaukau ʻia kahi wafer SiC kiʻekiʻe kiʻekiʻe (4H/6H) ma ke ʻano he mea hāʻawi.
Hoʻopaʻa ʻia ka Layer Insulating– Hoʻokumu ʻia kahi kiʻiʻoniʻoni insulating (SiO₂ a i ʻole Si₃N₄) ma luna o ka wafer lawe (Si a i ʻole SiC).
Hoʻopaʻa Wafer– Hoʻopili pū ʻia ka wafer SiC a me ka wafer lawe ma lalo o ke kiʻekiʻe wela a i ʻole ke kōkua plasma.
Hoʻopiʻi a hoʻopololei– Hoʻemi ʻia ka wafer hāʻawi SiC a hiki i kekahi mau micrometers a hoʻomaʻamaʻa ʻia no ka loaʻa ʻana o kahi ʻeleʻele atomically.
Nānā Hope- Ua hoʻāʻo ʻia ka wafer SICOI i hoʻopau ʻia no ka kūlike o ka mānoanoa, ka ʻili o ka ʻili, a me ka hana insulation.

Ma o keia hana, aʻāpana SiC ikaika lahilahime nā waiwai uila a me nā mea wela maikaʻi e hui pū ʻia me kahi kiʻiʻoniʻoni insulating a me kahi substrate kākoʻo, e hana ana i kahi kahua hana kiʻekiʻe no ka mana o ka hanauna e hiki mai ana a me nā polokalamu RF.

Nā Pōmaikaʻi Nui o nā Wafers SICOI

Māhele Hiʻona	Nā ʻano ʻenehana	Pōmaikaʻi kumu
Hoʻolālā Mea	4H/6H-SiC papa hana + insulating film (SiO₂/Si₃N₄) + Si a SiC lawe	Loaʻa i ka hoʻokaʻawale uila ikaika, hoʻemi i ka interference parasitic
Na Waiwai Uila	ʻO ka ikaika haʻahaʻa kiʻekiʻe (> 3 MV/cm), haʻahaʻa dielectric poho	Optimized no ka kiʻekiʻe-voltage a me ka kiʻekiʻe-frequency hana
Waiwai wela	Hiki i ka wela wela a hiki i ka 4.9 W/cm·K, paʻa ma luna o 500°C	Hoʻopau wela maikaʻi, hana maikaʻi ma lalo o nā haʻahaʻa wela koʻikoʻi
Na Waiwai Mechanical	ʻO ka paʻakikī loa (Mohs 9.5), ka helu haʻahaʻa o ka hoʻonui wela	Paʻa i ke kaumaha, hoʻonui i ka lōʻihi o ka mīkini
ʻAno ʻili	ʻili pahee loa (Ra <0.2 nm)	Hoʻolaha i ka epitaxy kīnā ʻole a me ka hana ʻana i nā mea hana pono
Hoʻomākaʻi	Kū'ē >10¹⁴ Ω·cm, ʻauheʻe leaka haʻahaʻa	Hana hilinaʻi ma RF a me nā noi hoʻokaʻawale kiʻekiʻe-voltage
Nui & Hoʻopilikino	Loaʻa i nā ʻano 4, 6, a me 8-inihi; SiC mānoanoa 1-100 μm; hoʻokaʻawale 0.1-10 μm	Hoʻolālā maʻalahi no nā koi noi like ʻole

Nā ʻāpana noi kumu

Mahele Noi	Nā hihia hoʻohana maʻamau	Nā Pono Hana
Mea uila uila	ʻO nā mea hoʻohuli EV, nā kikowaena hoʻouka, nā ʻenehana mana ʻenehana	Kiʻekiʻe breakdown voltage, emi hoʻololi poho
RF & 5G	Nā mea hoʻonui mana o ke kahua kumu, nā ʻāpana hawewe millimeter	ʻO nā parasitic haʻahaʻa, kākoʻo i nā hana GHz-range
Nā mea ʻike MEMS	ʻO nā mea ʻike paʻakikī o ke kaiapuni, MEMS hoʻokele	ʻO ke kūpaʻa wela kiʻekiʻe, kū i ka radiation
Aerospace & Palekana	Nā leka uila, nā modula mana avionics	ʻO ka hilinaʻi i nā mahana wela a me ka hoʻolaha radiation
Māhele akamai	Nā mea hoʻololi HVDC, nā mea hoʻokele kaapuni paʻa	ʻO ka hoʻohaʻahaʻa kiʻekiʻe e hōʻemi i ka nalowale o ka mana
Optoelectronics	ʻO nā LED UV, nā substrate laser	Kākoʻo ka maikaʻi crystalline kiʻekiʻe i ka hoʻokuʻu māmā

Ka hana ʻana o 4H-SiCOI

Loaʻa ka hana ʻana o nā wafers 4H-SiCOI ma oka hoʻopaʻa ʻana i ka wafer a me ka hana ʻemi, hiki ke hoʻohana i nā pilina insulating kiʻekiʻe a me nā papa hana SiC kīnā ʻole.

a: Schematic o ka 4H-SiCOI material platform fabrication.
b: Kiʻi o ka 4-inihi 4H-SiCOI wafer e hoʻohana ana i ka hoʻopaʻa ʻana a me ka lahilahi; kaha ʻia nā ʻāpana kīnā.
c: Mānoanoa uniformity characterization o ka 4H-SiCOI substrate.
d: ʻO ke kiʻi optical o kahi make 4H-SiCOI.
e: Ke kahe kaʻina hana no ka hana ʻana i kahi resonator microdisk SiC.
f: SEM o kahi resonator microdisk i hoʻopau ʻia.
g: Hoʻonui ʻia ka SEM e hōʻike ana i ka ʻaoʻao ʻaoʻao resonator; Hōʻike ka AFM inset i ka maʻalahi o ka ʻili nanoscale.
h: ʻO SEM kea e hōʻike ana i ka ʻili o luna me ke ʻano parabolic.

FAQ ma SICOI Wafers

Q1: He aha nā pōmaikaʻi o nā wafers SICOI ma mua o nā wafers SiC kahiko?
A1: ʻAʻole like me nā substrate SiC maʻamau, ʻo nā wafers SICOI kahi papa insulating e hōʻemi ana i ka capacitance parasitic a me nā au leakage, e alakaʻi ana i ka ʻoi aku ka maikaʻi, ka pane pinepine ʻoi aku ka maikaʻi, a me ka hana wela.

Q2: He aha nā nui wafer i loaʻa maʻamau?
A2: Hana pinepine ʻia nā wafers SICOI ma nā ʻano 4-ʻīniha, 6-ʻīniha, a me 8-ʻīniha, me ka mānoanoa SiC a me ka insulating layer mānoanoa i loaʻa ma muli o nā koi o ka mea hana.

Q3: ʻO wai nā ʻoihana e pōmaikaʻi loa mai nā wafers SICOI?
A3: Loaʻa i nā ʻoihana koʻikoʻi nā uila uila no nā kaʻa uila, nā uila uila RF no nā pūnaewele 5G, MEMS no nā sensor aerospace, a me nā optoelectronics e like me nā UV LED.

Q4: Pehea e hoʻomaikaʻi ai ka papa insulating i ka hana o ka mea hana?
A4: ʻO ke kiʻi ʻoniʻoni insulating (SiO₂ a i ʻole Si₃N₄) pale i ka leaka o kēia manawa a hōʻemi i ke kamaʻilio keʻa uila, hiki ke hoʻomanawanui i ka volta kiʻekiʻe, ʻoi aku ka maikaʻi o ka hoʻololi ʻana, a me ka hoʻemi ʻana i ka wela.

Q5: Ua kūpono anei nā wafers SICOI no nā noi wela kiʻekiʻe?
A5: ʻAe, me ke kiʻekiʻe o ka thermal conductivity a me ke kūpaʻa ma mua o 500 ° C, ua hoʻolālā ʻia nā wafers SICOI e hana hilinaʻi ma lalo o ka wela wela a me nā wahi paʻakikī.

Q6: Hiki ke hoʻopilikino ʻia nā wafers SICOI?
A6: ʻOiaʻiʻo. Hāʻawi nā mea hana i nā hoʻolālā i hoʻohālikelike ʻia no nā mānoanoa kikoʻī, nā pae doping, a me nā hoʻohui substrate e hoʻokō i nā noiʻi like ʻole a me nā pono ʻoihana.

Mua: Mekini Oki Uea Daimana no SiC | Sapphire | Quartz | aniani

Aʻe: ʻO ka mīkini ʻili daimana he nui no ka SiC Sapphire Ultra-Hard Brittle Materials