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ʻO SICOI (Silicon Carbide ma ka Insulator) Wafers SiC Film ON Silicon

ʻO SICOI (Silicon Carbide ma ka Insulator) Wafers SiC Film ON Silicon Kiʻi i hōʻike ʻia
  • ʻO SICOI (Silicon Carbide ma ka Insulator) Wafers SiC Film ON Silicon
  • ʻO SICOI (Silicon Carbide ma ka Insulator) Wafers SiC Film ON Silicon
  • ʻO SICOI (Silicon Carbide ma ka Insulator) Wafers SiC Film ON Silicon

Wehewehe Pōkole:

ʻO nā wafers Silicon Carbide on Insulator (SICOI) he mau substrates semiconductor hanauna hou e hoʻohui i nā waiwai kino a me nā uila kiʻekiʻe o ka silicon carbide (SiC) me nā ʻano hoʻokaʻawale uila koʻikoʻi o kahi papa buffer insulating, e like me ka silicon dioxide (SiO₂) a i ʻole silicon nitride (Si₃N₄). ʻO kahi wafer SICOI maʻamau he papa SiC epitaxial lahilahi, kahi kiʻiʻoniʻoni insulating waena, a me kahi substrate kumu kākoʻo, hiki ke lilo i silicon a i ʻole SiC.


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Kiʻikuhi kikoʻī

SICOI 11_副本
SICOI 14_副本2

Hoʻolauna ʻia o nā wafers Silicon Carbide ma Insulator (SICOI)

ʻO nā wafers Silicon Carbide on Insulator (SICOI) he mau substrates semiconductor hanauna hou e hoʻohui i nā waiwai kino a me nā uila kiʻekiʻe o ka silicon carbide (SiC) me nā ʻano hoʻokaʻawale uila koʻikoʻi o kahi papa buffer insulating, e like me ka silicon dioxide (SiO₂) a i ʻole silicon nitride (Si₃N₄). ʻO kahi wafer SICOI maʻamau he papa SiC epitaxial lahilahi, kahi kiʻiʻoniʻoni insulating waena, a me kahi substrate kumu kākoʻo, hiki ke lilo i silicon a i ʻole SiC.

Ua hana ʻia kēia ʻano hybrid e hoʻokō i nā koi koʻikoʻi o nā mea uila mana kiʻekiʻe, alapine kiʻekiʻe, a me nā mea uila wela kiʻekiʻe. Ma ka hoʻohui ʻana i kahi papa insulating, hoʻemi nā wafers SICOI i ka capacitance parasitic a kāohi i nā kahe leakage, no laila e hōʻoiaʻiʻo ana i nā alapine hana kiʻekiʻe, ka pono maikaʻi, a me ka hoʻokele thermal i hoʻomaikaʻi ʻia. ʻO kēia mau pono e lilo ai lākou i mea waiwai nui i nā ʻāpana e like me nā kaʻa uila, nā ʻōnaehana telecommunication 5G, nā ʻōnaehana aerospace, nā uila RF holomua, a me nā ʻenehana sensor MEMS.

Kumu Hana o nā Wafers SICOI

Hana ʻia nā wafers SICOI (Silicon Carbide on Insulator) ma o kahi ʻano hana holomuaka hoʻopaʻa ʻana o ka wafer a me ke kaʻina hana lahilahi:

  1. Ka ulu ʻana o ka substrate SiC– Ua hoʻomākaukau ʻia kahi wafer SiC kristal hoʻokahi kiʻekiʻe (4H/6H) ma ke ʻano he mea hāʻawi.

  2. Ka waiho ʻana o ka papa hoʻokaʻawale– Hoʻokumu ʻia kahi ʻili hoʻokaʻawale (SiO₂ a i ʻole Si₃N₄) ma luna o ka wafer lawe (Si a i ʻole SiC).

  3. Hoʻopaʻa Wafer– Hoʻopaʻa ʻia ka wafer SiC a me ka wafer lawe ma lalo o ke kōkua wela kiʻekiʻe a i ʻole ke kōkua plasma.

  4. Ka lahilahi ʻana a me ka poli ʻana– Hoʻomāmā ʻia ka wafer mea hāʻawi SiC i kekahi mau micrometer a hoʻowali ʻia e loaʻa ai kahi ʻili laumania e like me ke ʻātoma.

  5. Nānā hope loa– Ua hoʻāʻo ʻia ka wafer SICOI i hoʻopau ʻia no ke ʻano like o ka mānoanoa, ka ʻāʻī o ka ʻili, a me ka hana insulation.

Ma o kēia kaʻina hana, hepapa SiC hana lahilahime nā waiwai uila a me ka thermal maikaʻi loa i hui pū ʻia me kahi kiʻiʻoniʻoni insulating a me kahi substrate kākoʻo, e hana ana i kahi kahua hana kiʻekiʻe no ka mana o ka hanauna hou a me nā polokalamu RF.

ʻO SiCOI

Nā Pōmaikaʻi Koʻikoʻi o nā Wafers SICOI

Māhele Hiʻona Nā ʻano loea Nā Pōmaikaʻi Koʻikoʻi
ʻAno Mea Papa hana 4H/6H-SiC + ʻili hoʻokaʻawale (SiO₂/Si₃N₄) + mea lawe Si a i ʻole SiC Hoʻokō i ka hoʻokaʻawale uila ikaika, hoʻemi i ka hoʻopilikia parasitic
Nā Waiwai Uila Ikaika haki kiʻekiʻe (>3 MV/cm), pohō dielectric haʻahaʻa Hoʻonohonoho ʻia no ka hana voltage kiʻekiʻe a me ke alapine kiʻekiʻe
Nā Waiwai Wela ʻO ke alakaʻi wela a hiki i ka 4.9 W/cm·K, paʻa ma luna o 500°C Hoʻopau maikaʻi i ka wela, hana maikaʻi loa ma lalo o nā ukana wela koʻikoʻi
Nā Waiwai Mekanika Paʻakikī loa (Mohs 9.5), coefficient haʻahaʻa o ka hoʻonui wela Paʻa i ke kaumaha, hoʻonui i ke ola o ka hāmeʻa
Ka maikaʻi o ka ʻili ʻIli laumania loa (Ra <0.2 nm) Paipai i ka epitaxy kīnā ʻole a me ka hana ʻana o nā mea hana hilinaʻi
Hoʻokaʻawale ʻana Ke kū'ē ʻana >10¹⁴ Ω·cm, ke au leaka haʻahaʻa Hana hilinaʻi ma nā noi hoʻokaʻawale RF a me ke kiʻekiʻe-voltage
Ka nui a me ka hoʻopilikino ʻana Loaʻa i nā ʻano 4, 6, a me 8-'īniha; ʻO ka mānoanoa SiC 1-100 μm; ka pale ʻana he 0.1-10 μm Hoʻolālā maʻalahi no nā koi noi like ʻole

 

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Nā Wahi Hoʻohana Koʻikoʻi

ʻĀpana Noi Nā Hihia Hoʻohana Maʻamau Nā Pōmaikaʻi Hana
Nā Uila Mana Nā mea hoʻohuli EV, nā kikowaena hoʻouka, nā mea hana mana ʻoihana Ka uila haki kiʻekiʻe, hoʻemi ʻia ka pohō hoʻololi
RF a me 5G Nā mea hoʻonui mana kikowaena, nā ʻāpana nalu millimeter Nā parasitic haʻahaʻa, kākoʻo i nā hana GHz-range
Nā Mea ʻIke MEMS Nā mea ʻike kaomi o ke kaiapuni ʻino, nā MEMS pae hoʻokele Paʻa wela kiʻekiʻe, kū i ka radiation
Aerospace & Pale Kaua Nā kamaʻilio ukali, nā modula mana avionics Hilinaʻi i nā mahana koʻikoʻi a me ka hōʻike ʻana i ka radiation
Pūnaewele Akamai Nā mea hoʻololi HVDC, nā mea haki kaapuni paʻa Hoʻemi ka insulation kiʻekiʻe i ka pohō mana
ʻOptoelectronics Nā LED UV, nā substrates laser Kākoʻo ke ʻano crystalline kiʻekiʻe i ka hoʻokuʻu ʻana o ka mālamalama kūpono

Ka hana ʻana o 4H-SiCOI

Hoʻokō ʻia ka hana ʻana o nā wafers 4H-SiCOI ma onā kaʻina hana hoʻopaʻa wafer a me ka lahilahi, e hiki ai i nā ʻaoʻao insulating kiʻekiʻe a me nā papa hana SiC kīnā ʻole.

  • aKiʻikuhi o ka hana ʻana o ka paepae mea 4H-SiCOI.

  • bKiʻi o kahi wafer 4H-SiCOI 4-'īniha e hoʻohana ana i ka hoʻopili ʻana a me ka lahilahi; nā wahi kīnā i hōʻailona ʻia.

  • cʻAno like o ka mānoanoa o ka substrate 4H-SiCOI.

  • dKiʻi ʻōnohi o kahi make 4H-SiCOI.

  • eKe kaʻina hana no ka hana ʻana i kahi resonator microdisk SiC.

  • f: SEM o kahi resonator microdisk i hoʻopau ʻia.

  • gʻO ka SEM i hoʻonui ʻia e hōʻike ana i ka paia ʻaoʻao resonator; Hōʻike ka inset AFM i ka laumania o ka ʻili nanoscale.

  • hʻO ka SEM ʻokiʻoki e hōʻike ana i ka ʻili luna i ke ʻano parabolic.

Nā nīnau i nīnau pinepine ʻia ma nā Wafers SICOI

Q1: He aha nā pono o nā wafers SICOI ma mua o nā wafers SiC kuʻuna?
A1: ʻAʻole e like me nā substrates SiC maʻamau, loaʻa i nā wafers SICOI kahi papa insulating e hōʻemi ana i ka capacitance parasitic a me nā kahe leakage, e alakaʻi ana i ka pono kiʻekiʻe, ka pane alapine maikaʻi aʻe, a me ka hana thermal kiʻekiʻe.

Q2: He aha nā nui wafer i loaʻa pinepine?
A2: Hana pinepine ʻia nā wafers SICOI i nā ʻano 4-ʻīniha, 6-ʻīniha, a me 8-ʻīniha, me ka SiC i hoʻopilikino ʻia a me ka mānoanoa o ka papa insulating i loaʻa ma muli o nā koi o ka hāmeʻa.

Q3: ʻO wai nā ʻoihana e pōmaikaʻi nui ai mai nā wafers SICOI?
A3: ʻO nā ʻoihana koʻikoʻi e komo pū me nā mea uila mana no nā kaʻa uila, nā mea uila RF no nā pūnaewele 5G, MEMS no nā mea ʻike aerospace, a me nā optoelectronics e like me nā UV LED.

Q4: Pehea e hoʻomaikaʻi ai ka papa insulating i ka hana o ka hāmeʻa?
A4: Kāohi ka ʻili hoʻokaʻawale (SiO₂ a i ʻole Si₃N₄) i ka liki ʻana o ke au a hoʻemi i ke kamaʻilio uila, e hiki ai ke hoʻomanawanui i ke ana uila kiʻekiʻe, ka hoʻololi ʻana i ʻoi aku ka maikaʻi, a me ka hoʻemi ʻana i ka pohō wela.

Q5: He kūpono anei nā wafers SICOI no nā noi wela kiʻekiʻe?
A5: ʻAe, me ke alakaʻi wela kiʻekiʻe a me ke kūpaʻa ma mua o 500°C, ua hoʻolālā ʻia nā wafers SICOI e hana pono ma lalo o ka wela nui a ma nā ʻano ʻino.

Q6: Hiki ke hoʻopilikino ʻia nā wafers SICOI?
A6: ʻAe. Hāʻawi nā mea hana i nā hoʻolālā i hana kūikawā ʻia no nā mānoanoa kikoʻī, nā pae doping, a me nā hui substrate e hoʻokō i nā noiʻi like ʻole a me nā pono ʻoihana.

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