Hoe Cantilever Silicon Carbide (Hoe Cantilever SiC)

ʻO ke kiʻi hiʻona o ka hoe Cantilever Silicon Carbide (ʻO ke hoe Cantilever SiC)

Wehewehe Pōkole:

E leka uila mai iā mākou

Nā hiʻohiʻona

Kiʻikuhi kikoʻī

ʻIke Huahana

ʻO ka silicon carbide cantilever hoe, i hana ʻia mai ka silicon carbide i hoʻopaʻa ʻia me ka hopena kiʻekiʻe (RBSiC), he ʻāpana koʻikoʻi ia i hoʻohana ʻia i nā ʻōnaehana hoʻouka wafer a me ka lawelawe ʻana no nā noi semiconductor a me photovoltaic.
Ke hoʻohālikelike ʻia me nā hoe quartz a graphite kuʻuna, hāʻawi nā hoe cantilever SiC i ka ikaika mechanical kiʻekiʻe, ka paʻakikī kiʻekiʻe, ka hoʻonui wela haʻahaʻa, a me ke kūpaʻa ʻana i ka pala. Mālama lākou i ke kūpaʻa kūkulu maikaʻi loa ma lalo o nā mahana kiʻekiʻe, e hoʻokō ana i nā koi koʻikoʻi o nā nui wafer nui, ke ola lawelawe lōʻihi, a me ka haumia haʻahaʻa loa.

Me ka hoʻomohala mau ʻana o nā kaʻina hana semiconductor i nā anawaena wafer nui aʻe, ka throughput kiʻekiʻe, a me nā wahi hana maʻemaʻe, ua pani mālie nā hoe cantilever SiC i nā mea maʻamau, e lilo ana i koho makemake ʻia no nā umu diffusion, LPCVD, a me nā lako hana wela kiʻekiʻe e pili ana.

Nā Hiʻohiʻona Huahana

Kūlana Paʻa Mahana Kiʻekiʻe Loa
- Hana pono ma 1000–1300 ℃ me ka ʻole o ke ʻano loli.
- ʻO ka mahana lawelawe kiʻekiʻe loa a hiki i ka 1380 ℃.
Ka Mana Hoʻouka Kiʻekiʻe
- ʻO ka ikaika kulou a hiki i ka 250–280 MPa, ʻoi aku ke kiʻekiʻe ma mua o nā hoe quartz.
- Hiki ke lawelawe i nā wafers nui (300 mm a ʻoi aku).
Ola Hana Hoʻolōʻihi a me ka Mālama Haʻahaʻa
- ʻO ke koina hoʻonui wela haʻahaʻa (4.5 × 10⁻⁶ K⁻¹), kūpono loa me nā mea uhi LPCVD.
- Hoʻēmi i nā māwae a me ka ʻili ʻana i hana ʻia e ke kaumaha, e hoʻolōʻihi nui ana i nā pōʻaiapuni hoʻomaʻemaʻe a me ka mālama.
Ke kū'ē'ē i ka pala a me ka maʻemaʻe
- ʻO ke kūpaʻa maikaʻi loa i nā waikawa a me nā alkalis.
- ʻO ka microstructure mānoanoa me ka porosity hāmama <0.1%, e hōʻemi ana i ka hana ʻana o nā ʻāpana a me ka hoʻokuʻu ʻana o nā mea haumia.
Hoʻolālā Hoʻohālikelike-Automatic
- ʻO ke ʻano ʻokiʻoki paʻa me ka pololei kiʻekiʻe o ke ana.
- Hoʻohui pono ʻia me nā ʻōnaehana hoʻouka a hoʻokuʻu wafer robotic, e hiki ai ke hana piha ʻakomi.

Nā Waiwai Kino a me Kemika

Mea	ʻĀpana	ʻIkepili
Mahana Hana Loa	℃	1380
Ka nui o ka paʻa	g/cm³	3.04 – 3.08
Ka Porosity Hāmama	%	< 0.1
Ikaika Kūlou	MPa	250 (20℃), 280 (1200℃)
Modulus o ka Elasticity	GPa	330 (20℃), 300 (1200℃)
Ka Hoʻokele Wela	W/m·K	45 (1200℃)
Ka helu hoʻonui wela	K⁻¹×10⁻⁶	4.5
Paʻakikī Vickers	HV2	≥ 2100
Ke kū'ē ʻana i ka waikawa/alkaline	-	Maikaʻi loa

Nā lōʻihi maʻamau:2378 mm, 2550 mm, 2660 mm
Loaʻa nā ana maʻamau ma ke noi

Nā noi

ʻOihana Semiconductor
- LPCVD (Hoʻokahe ʻana o ka mahu kemika haʻahaʻa)
- Nā kaʻina hana hoʻolaha (phosphorus, boron, a pēlā aku)
- ʻOkika wela
ʻOihana Photovoltaic
- ʻO ka hoʻolaha ʻana o ka wafer polysilicon a me ka monocrystalline a me ka uhi ʻana
- Ka hoʻomehana wela kiʻekiʻe a me ka passivation
Nā Māla ʻē aʻe
- Nā wahi ʻinoʻino wela kiʻekiʻe
- ʻO nā ʻōnaehana lawelawe wafer kikoʻī e koi ana i ke ola lawelawe lōʻihi a me ka haumia haʻahaʻa

Nā Pōmaikaʻi o ka Mea Kūʻai

Hoʻemi ʻia nā kumukūʻai hana– ʻOi aku ka lōʻihi o ke ola ke hoʻohālikelike ʻia me nā hoe quartz, e hoʻemi ana i ka manawa downtime a me ke alapine hoʻololi.
Hua kiʻekiʻe aʻe– ʻO ka haumia haʻahaʻa loa e hōʻoiaʻiʻo ana i ka maʻemaʻe o ka ʻili wafer a hoʻemi i nā helu kīnā.
Hōʻoia i ka wā e hiki mai ana- Hoʻohālikelike me nā nui wafer nui a me nā kaʻina hana semiconductor hanauna e hiki mai ana.
Hoʻomaikaʻi ʻia ka huahana- Hoʻopiha piha ʻia me nā ʻōnaehana automation robotic, e kākoʻo ana i ka hana ʻana i ka nui.

Nā nīnau i nīnau pinepine ʻia - Silicon Carbide Cantilever Paddle

Q1: He aha ka hoe cantilever silicon carbide?
A: He ʻāpana kākoʻo wafer a me ka lawelawe ʻana i hana ʻia me ka silicon carbide i hoʻopaʻa ʻia i ka hopena (RBSiC). Hoʻohana nui ʻia ia i loko o nā umu hoʻolaha, LPCVD, a me nā kaʻina hana semiconductor wela kiʻekiʻe a me nā photovoltaic.

Q2: No ke aha e koho ai i ka SiC ma mua o nā hoe quartz?
A: Ke hoʻohālikelike ʻia me nā hoe quartz, hāʻawi nā hoe SiC:

ʻOi aku ka ikaika mechanical a me ka hiki ke hāpai i ka ukana
ʻOi aku ka maikaʻi o ke kūpaʻa wela ma nā mahana a hiki i 1380 ℃
ʻOi aku ka lōʻihi o ke ola lawelawe a me ka hoʻemi ʻana i nā pōʻaiapuni mālama
Ka emi ʻana o ka hana ʻana o nā ʻāpana a me ka pilikia o ka haumia
Hoʻohālikelike me nā nui wafer nui aʻe (300 mm a ʻoi aku)

Q3: He aha nā nui wafer e hiki i ka hoe cantilever SiC ke kākoʻo?
A: Loaʻa nā hoe maʻamau no nā ʻōnaehana umu 2378 mm, 2550 mm, a me 2660 mm. Loaʻa nā ana i hoʻopilikino ʻia e kākoʻo i nā wafers a hiki i 300 mm a ma ʻō aku.

E pili ana iā mākou

He loea ʻo XKH i ka hoʻomohala ʻenehana kiʻekiʻe, ka hana ʻana, a me ke kūʻai aku ʻana i ke aniani optical kūikawā a me nā mea kristal hou. Lawelawe kā mākou huahana i nā mea uila optical, nā mea uila mea kūʻai aku, a me ka pūʻali koa. Hāʻawi mākou i nā ʻāpana optical Sapphire, nā uhi lens kelepona paʻalima, Ceramics, LT, Silicon Carbide SIC, Quartz, a me nā wafers kristal semiconductor. Me ka ʻike loea a me nā lako hana kiʻekiʻe, ʻoi aku mākou i ka hana ʻana i nā huahana maʻamau ʻole, me ka manaʻo e lilo i alakaʻi i nā mea optoelectronic ʻoihana ʻenehana kiʻekiʻe.