Silicon carbide daimana mīkini ʻoki uea 4/6/8/12 ʻīniha SiC ingot hana

Silicon carbide daimana mīkini ʻoki uea 4/6/8/12 ʻīniha SiC ingot hoʻoili kiʻi Hōʻike

ʻO ka wehewehe pōkole:

ʻO ka mīkini ʻokiʻoki ʻo Silicon carbide ʻo Diamond Wire kahi ʻano mea hana kiʻekiʻe kiʻekiʻe i hoʻolaʻa ʻia i ka ʻāpana silicon carbide (SiC), me ka hoʻohana ʻana i ka ʻenehana Diamond Wire Saw, ma o ka uea daimana neʻe kiʻekiʻe (laina anawaena 0.1 ~ 0.3mm) i ka SiC ingot multi-wire ʻokiʻoki, e hoʻokō i ka mākaukau kiʻekiʻe, haʻahaʻa-pōʻino wafer hoʻomākaukau. Hoʻohana nui ʻia nā mea hana i ka SiC power semiconductor (MOSFET/SBD), ka mīkini uila uila (GaN-on-SiC) a me ka hoʻoili ʻana o ka substrate device optoelectronic, he mea koʻikoʻi ia i ke kaulahao ʻoihana SiC.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Ke kumu hana:

1. Hoʻoponopono Ingot: Hoʻopaʻa ʻia ʻo SiC ingot (4H / 6H-SiC) ma ke kahua ʻoki ma o ka mea hoʻopili e hōʻoia i ka pololei o ke kūlana (± 0.02mm).

2. Diamond laina neʻe: daimana laina (electroplated daimana particles ma luna o ka ili) ua alakai ia e ke alakai huila nenoaiu no kiʻekiʻe-wikiwiki kaapuni (laina laina 10 ~ 30m / s).

3. ʻOki ʻana i ka meaʻai: hānai ʻia ka ingot ma ke ala i hoʻonohonoho ʻia, a ʻoki ʻia ka laina daimana i ka manawa like me nā laina like like (100 ~ 500 laina) e hana i nā wafers he nui.

4. ʻO ka hoʻomaʻamaʻa a me ka wehe ʻana i ka puʻupuʻu: E pīpī i ka mea hoʻoheheʻe (wai deionized + additives) i ka ʻoki ʻoki e hōʻemi i ka pōʻino wela a wehe i nā ʻāpana.

Nā ʻāpana kī:

1. ʻO ka wikiwiki o kaʻokiʻana: 0.2 ~ 1.0mm / min (e pili ana i ke kuhikuhi aniani a me ka mānoanoa o SiC).

2. Hoʻopaʻapaʻa laina: 20 ~ 50N (kiʻekiʻe maʻalahi e wāwahi i ka laina, haʻahaʻa haʻahaʻa e pili ana i ka ʻoki pololei).

3.Wafer mānoanoa: maʻamau 350 ~ 500μm, wafer hiki i 100μm.

Nā hiʻohiʻona nui:

(1) Oki pololei
ʻO ka ʻae ʻana i ka mānoanoa: ± 5μm (@350μm wafer), ʻoi aku ka maikaʻi ma mua o ka ʻoki ʻana i ka mortar maʻamau (± 20μm).

ʻO ka ʻili o ka ʻili: Ra<0.5μm (ʻaʻohe mea wili hou i koi ʻia e hōʻemi i ka nui o ka hana ma hope).

Warpage: <10μm (e ho'ēmi i ka paʻakikī o ka polishing hope).

(2) Ka hana pono
ʻOki laina nui: ʻokiʻoki i nā ʻāpana 100 ~ 500 i ka manawa, hoʻonui i ka mana hana 3 ~ 5 mau manawa (vs. Hoʻokahi laina laina).

Ke ola laina: Hiki i ka laina daimana ke ʻoki i ka 100 ~ 300km SiC (e pili ana i ka paʻakikī o ka ingot a me ka hoʻomaikaʻi ʻana i ke kaʻina hana).

(3) Ka hana poino haahaa
ʻO ka haki ʻana: <15μm (ʻoki kuʻuna> 50μm), hoʻomaikaʻi i ka hua wafer.

Papa poino o lalo: <5μm (e ho'ēmi i ka wehe ʻana i ka polishing).

(4) Ka palekana a me ka hoʻokele waiwai
ʻAʻole hoʻohaumia ʻia: Hoʻemi ʻia nā kumukūʻai hoʻolei wai ʻōpala i hoʻohālikelike ʻia me ka ʻoki ʻana i ka mortar.

Hoʻohana waiwai: ʻOki ʻana i ka poho <100μm/ ʻokiʻoki, mālama i nā mea maka SiC.

hopena ʻoki:

1. ʻO ka maikaʻi o ka wafer: ʻaʻohe māwae macroscopic ma luna o ka ʻili, liʻiliʻi nā hemahema microscopic (hoʻonui dislocation hiki ke hoʻomalu). Hiki ke hoʻokomo pololei i ka loulou polishing rough, hoʻopōkole i ke kahe kaʻina.

2. Kūlike: ka mānoanoa deviation o ka wafer i loko o ka pūʻulu mea <± 3%, kūpono no ka automated hana.

3.Applicability: Kākoʻo 4H / 6H-SiC ingot ʻokiʻoki, kūpono me ke ʻano conductive / semi-insulated.

ʻIkepili ʻenehana:

Hōʻike	Nā kikoʻī
Nā Ana (L × W × H)	2500x2300x2500 a hoʻopilikino paha
Hoʻoponopono i ka nui o nā mea	4, 6, 8, 10, 12 'īniha o ka silikon carbide
ʻOka ʻilikai	Ra≤0.3u
Awelika ʻoki māmā	0.3mm/min
Kaumaha	5.5t
Kaʻina hana ʻoki ʻana i nā ʻanuʻu	≤30 ʻanuʻu
Ka halulu lako	≤80 dB
Uea hao hao	0~110N(0.25 uea hoʻopaʻapaʻa he 45N)
ʻO ka wikiwiki uea kila	0~30m/S
Mana piha	50kw
Anawaena uwea daimana	≥0.18mm
Hoʻopau palahalaha	≤0.05mm
Ka ʻoki a me ka haki ʻana	≤1% (koe wale no nā kumu kanaka, mea silika, laina, mālama a me nā kumu ʻē aʻe)

Nā lawelawe XKH:

Hāʻawi ʻo XKH i ke kaʻina hana holoʻokoʻa o ka mīkini ʻoki wili daimana silicon carbide, me ke koho ʻana i nā mea hana (wire diameter/wire speed matching), ka hoʻomohala ʻana (ʻoki ʻana i ka parameter optimization), nā lako mea kūʻai (diamond wire, alakaʻi huila) a me ke kākoʻo ma hope o ke kūʻai ʻana (mālama ʻana i nā lako, ʻoki ʻoki ʻana i ka maikaʻi) Hāʻawi pū ia i nā hoʻomaikaʻi maʻamau (e like me ka ʻokiʻoki ultra-thin, ka hoʻouka ʻana a me ka wehe ʻana) me kahi manawa alakaʻi he 4-8 pule.