Silicon Carbide SiC Ingot 6inch N type Dummy/prime grade mānoanoa hiki ke hana maʻamau

ʻO ka wehewehe pōkole:

ʻO Silicon Carbide (SiC) kahi mea semiconductor ākea-bandgap e loaʻa ana i ka traction koʻikoʻi ma waena o nā ʻano ʻoihana ma muli o kāna mau mea uila, wela, a me nā mea mechanical. ʻO ka SiC Ingot i ka 6-inch N-type Dummy/Prime grade i hoʻolālā kūikawā ʻia no ka hana ʻana i nā polokalamu semiconductor kiʻekiʻe, me nā noi mana kiʻekiʻe a me nā alapine kiʻekiʻe. Me nā koho mānoanoa maʻamau a me nā kikoʻī kikoʻī, hāʻawi kēia SiC ingot i kahi hopena kūpono no ka hoʻomohala ʻana i nā mea hana i hoʻohana ʻia i nā kaʻa uila, nā ʻōnaehana mana ʻenehana, kelepona, a me nā ʻāpana hana kiʻekiʻe. ʻO ka ikaika o SiC i nā kūlana kiʻekiʻe-volt, kiʻekiʻe-mehana, a me nā kūlana kiʻekiʻe e hōʻoia i ka hana lōʻihi, kūpono, a hilinaʻi hoʻi i nā ʻano noi.
Loaʻa ka SiC Ingot i ka nui 6-ʻīniha, me ke anawaena o 150.25mm ± 0.25mm a me ka mānoanoa ʻoi aku ma mua o 10mm, i mea kūpono no ka ʻoki ʻana i ka wafer. Hāʻawi kēia huahana i kahi hoʻonohonoho ʻili i wehewehe maikaʻi ʻia o 4 ° i ka <11-20> ± 0.2 °, e hōʻoia ana i ka pololei kiʻekiʻe i ka hana ʻana i nā mea hana. Hoʻohui ʻia, hōʻike ʻia ka ingot i kahi ʻano pālahalaha mua o <1-100> ± 5 °, e hāʻawi ana i ka alignment kristal maikaʻi loa a me ka hana ʻana.
Me ka resistivity kiʻekiʻe ma ka laulā o 0.015-0.0285 Ω·cm, kahi micropipe haʻahaʻa o <0.5, a me ka maikaʻi o ka lihi maikaʻi, kūpono kēia SiC Ingot no ka hana ʻana i nā mana mana e koi ai i nā hemahema liʻiliʻi a me ka hana kiʻekiʻe ma lalo o nā kūlana koʻikoʻi.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Waiwai

Papa: Papa Hana Hana (Dummy/Prime)
Nui: 6 iniha ke anawaena
Anawaena: 150.25mm ± 0.25mm
Mānoanoa: >10mm (Loaʻa ka mānoanoa maʻamau ma ke noi)
Ka Papa Hana: 4° a hiki i ka <11-20> ± 0.2°, ka mea e hōʻoia i ka maikaʻi aniani kiʻekiʻe a me ka alignment pololei no ka hana ʻana i nā mea hana.
ʻO ka ʻĀpana Paʻa Nui: <1-100> ± 5°, kahi hiʻohiʻona nui no ka ʻoki maikaʻi ʻana o ka ingot i loko o nā wafers a no ka ulu ʻana o ka kristal maikaʻi loa.
ʻO ka lōʻihi papa mua: 47.5mm ± 1.5mm, i hoʻolālā ʻia no ka maʻalahi ʻana a me ka ʻoki pololei.
Kū'ē: 0.015–0.0285 Ω·cm, kūpono no nā noi i nā mea mana kiʻekiʻe.
Micropipe Density: <0.5, e hōʻoia ana i nā hemahema liʻiliʻi e hiki ke hoʻopilikia i ka hana o nā mea hana.
BPD (Boron Pitting Density): <2000, kahi waiwai haʻahaʻa e hōʻike ana i ka maʻemaʻe aniani kiʻekiʻe a me ka haʻahaʻa haʻahaʻa haʻahaʻa.
TSD (Threading Screw Dislocation Density): <500, e hōʻoiaʻiʻo ana i ka pono o nā mea waiwai no nā mea hana kiʻekiʻe.
Nā ʻāpana Polytype: ʻAʻohe - ʻaʻohe o ka ingot mai nā kīnā polytype, e hāʻawi ana i ka maikaʻi o nā mea waiwai no nā noi kiʻekiʻe.
Edge Indents: <3, me ka 1mm laula a me ka hohonu, e hōʻoia ana i ka liʻiliʻi o ka pōʻino o ka ʻili a mālama i ka pono o ka ingot no ka ʻoki ʻana i ka wafer maikaʻi.
Nā māwae ʻaoʻao: 3, <1mm kēlā me kēia, me ka haʻahaʻa haʻahaʻa o ka pōʻino lihi, e hōʻoia ana i ka mālama pono ʻana a me ka hana hou ʻana.
Hoʻopili: Wafer pahu - ua hoʻopaʻa paʻa ʻia ka SiC ingot i kahi pahu wafer e hōʻoia i ka lawe ʻana a me ka lawelawe ʻana.

Nā noi

Mea uila uila:Hoʻohana nui ʻia ka 6-inch SiC ingot i ka hana ʻana i nā mea uila uila e like me MOSFET, IGBT, a me nā diodes, nā mea pono i nā ʻōnaehana hoʻololi mana. Hoʻohana nui ʻia kēia mau mea hana i nā mea hoʻohuli kaʻa uila (EV), nā kaʻa kaʻa ʻenehana, nā lako mana, a me nā ʻōnaehana mālama ikehu. ʻO ka hiki iā SiC ke hana i nā volta kiʻekiʻe, nā alapine kiʻekiʻe, a me nā wela wela ke kūpono ia no nā noi kahi e hakakā ai nā mea hana silicon (Si) kuʻuna e hana pono.

Nā Kaʻa Uila (EV):I nā kaʻa uila, he mea koʻikoʻi nā ʻāpana i hoʻokumu ʻia ʻo SiC no ka hoʻomohala ʻana i nā modula mana i nā inverters, nā mea hoʻololi DC-DC, a me nā loina ma luna o ka papa. ʻO ka conductivity thermal maikaʻi o SiC e hiki ai ke hoʻemi i ka hana wela a ʻoi aku ka maikaʻi o ka hoʻololi ʻana i ka mana, he mea nui ia no ka hoʻonui ʻana i ka hana a me ke kaʻa o nā kaʻa uila. Hoʻohui hou, hiki i nā mea SiC ke hiki i nā mea liʻiliʻi, māmā, a ʻoi aku ka hilinaʻi, e hāʻawi ana i ka hana holoʻokoʻa o nā ʻōnaehana EV.

Pūnaehana ikehu hou hou:He mea koʻikoʻi nā SiC ingots i ka hoʻomohala ʻana i nā mea hoʻololi mana i hoʻohana ʻia i nā ʻōnaehana ikehu hou, e komo pū me nā inverters solar, turbines makani, a me nā ʻōnaehana mālama ikehu. ʻO ka mana kiʻekiʻe o ka mana hoʻokele mana a me ka hoʻokele wela maikaʻi o SiC e hiki ai ke hoʻololi i ka ikehu kiʻekiʻe a hoʻomaikaʻi i ka hilinaʻi i kēia mau ʻōnaehana. ʻO kāna hoʻohana ʻana i ka ikehu hou e kōkua i ka hoʻoikaika ʻana i nā hana honua i ka hoʻomau ʻana o ka ikehu.

Kelepona:He kūpono hoʻi ka 6-inch SiC ingot no ka hana ʻana i nā ʻāpana i hoʻohana ʻia i nā noi kiʻekiʻe RF (radio frequency). Hoʻopili kēia i nā amplifiers, oscillators, a me nā kānana i hoʻohana ʻia i ke kelepona a me nā ʻōnaehana kamaʻilio ukali. ʻO ka hiki o SiC ke mālama i nā alapine kiʻekiʻe a me ka mana kiʻekiʻe e lilo ia i mea maikaʻi loa no nā polokalamu kelepona e koi ana i ka hana ikaika a me ka liʻiliʻi o ka hōʻailona hōʻailona.

Aerospace a me ka pale:ʻO ka uila haʻihaʻi kiʻekiʻe o SiC a me ke kūpaʻa ʻana i nā wela kiʻekiʻe e kūpono ia no ka aerospace a me nā noi pale. Hoʻohana ʻia nā ʻāpana i hana ʻia mai nā SiC ingots i nā ʻōnaehana radar, nā kamaʻilio satellite, a me nā uila uila no nā mokulele a me nā mokulele. Hiki i nā mea hoʻokumu SiC ke hana i nā ʻōnaehana aerospace ma lalo o nā kūlana koʻikoʻi i ʻike ʻia ma ka lewa a me nā wahi kiʻekiʻe.

ʻOihana ʻOihana:I ka ʻenehana ʻoihana, hoʻohana ʻia nā ʻāpana SiC i nā sensor, actuators, a me nā ʻōnaehana hoʻokele e pono ai e hana i nā wahi paʻakikī. Hoʻohana ʻia nā mea hoʻohana ʻo SiC i nā mīkini e koi ai i nā ʻāpana kūpono a lōʻihi i hiki ke kū i nā wela kiʻekiʻe a me nā koʻikoʻi uila.

Papa kuhikuhi Huahana

Waiwai	Hōʻike
Papa	Hana ʻia (Dummy/Prime)
Nui	6-iniha
Anawaena	150.25mm ± 0.25mm
mānoanoa	>10mm (Hoʻopilikino ʻia)
Kūlana ʻili	4° i ka <11-20> ± 0.2°
Kūlana Pāha mua	<1-100> ± 5°
Ka lōʻihi pālahalaha	47.5mm ± 1.5mm
Kū'ē	0.015–0.0285 Ω·cm
Micropipe Density	<0.5
ʻO ka Density Pitting Boron (BPD)	<2000
ʻO ka mānoanoa o ka hoʻoheheʻe ʻia ʻana o ka wiliwili wiliwili (TSD)	<500
Nā ʻāpana Polytype	ʻAʻohe
Nā Huli Huli	<3, 1mm ka laula a me ka hohonu
Nā māwae Edge	3, <1mm/ea
Hoʻopili	Wafer pahu

Ka hopena

ʻO ka 6-inch SiC Ingot - N-type Dummy/Prime grade kahi mea waiwai e hoʻokō i nā koi koʻikoʻi o ka ʻoihana semiconductor. ʻO kāna conductivity wela kiʻekiʻe, kūʻokoʻa kūʻokoʻa, a me ka haʻahaʻa haʻahaʻa haʻahaʻa he koho maikaʻi loa ia no ka hana ʻana i nā ʻenehana uila mana kiʻekiʻe, nā ʻāpana automotive, nā ʻōnaehana kelepona, a me nā ʻōnaehana ikehu hou. ʻO ka mānoanoa maʻamau a me nā kikoʻī kikoʻī e hōʻoiaʻiʻo e hiki ke hoʻopili ʻia kēia SiC ingot i kahi ākea o nā noi, e hōʻoia ana i ka hana kiʻekiʻe a me ka hilinaʻi i nā kaiapuni koi. No ka ʻike hou aku a i ʻole e kau i kahi kauoha, e ʻoluʻolu e kelepona i kā mākou hui kūʻai.