Hiki i ka mānoanoa o Silicon Carbide SiC Ingot 6inch N type Dummy/prime grade ke hana maʻamau ʻia

Hiki ke hoʻopilikino ʻia ka mānoanoa o Silicon Carbide SiC Ingot 6inch N type Dummy/prime grade Kiʻi i hōʻike ʻia

Wehewehe Pōkole:

ʻO Silicon Carbide (SiC) kahi mea semiconductor ākea-bandgap e loaʻa nei ka traction koʻikoʻi ma nā ʻano ʻoihana like ʻole ma muli o kona mau waiwai uila, thermal, a me mechanical kiʻekiʻe. ʻO ka SiC Ingot ma 6-'īniha N-type Dummy/Prime grade i hoʻolālā kūikawā ʻia no ka hana ʻana i nā mea semiconductor holomua, me nā noi mana kiʻekiʻe a me ke alapine kiʻekiʻe. Me nā koho mānoanoa hiki ke hoʻopilikino ʻia a me nā kikoʻī kikoʻī, hāʻawi kēia ingot SiC i kahi hopena kūpono no ka hoʻomohala ʻana i nā mea i hoʻohana ʻia i nā kaʻa uila, nā ʻōnaehana mana ʻoihana, nā kelepona, a me nā ʻāpana hana kiʻekiʻe ʻē aʻe. ʻO ka paʻa o SiC i nā kūlana voltage kiʻekiʻe, wela kiʻekiʻe, a me ke alapine kiʻekiʻe e hōʻoiaʻiʻo ana i ka hana lōʻihi, pono, a hilinaʻi hoʻi i nā ʻano noi like ʻole.
Loaʻa ka SiC Ingot i ka nui 6-'īniha, me ke anawaena o 150.25mm ± 0.25mm a me ka mānoanoa ʻoi aku ma mua o 10mm, e kūpono ana no ka ʻoki ʻana i ka wafer. Hāʻawi kēia huahana i kahi kuhikuhi ʻili i wehewehe pono ʻia o 4° i <11-20> ± 0.2°, e hōʻoiaʻiʻo ana i ka pololei kiʻekiʻe i ka hana ʻana o ka hāmeʻa. Eia kekahi, hōʻike ka ingot i kahi kuhikuhi pālahalaha mua o <1-100> ± 5°, e hāʻawi ana i ka hoʻonohonoho kristal kūpono a me ka hana hana.
Me ke kū'ē kiʻekiʻe ma ka pae o 0.015–0.0285 Ω·cm, ka nui o ka micropipe haʻahaʻa o <0.5, a me ka maikaʻi o ka lihi, kūpono kēia SiC Ingot no ka hana ʻana i nā mea mana e pono ai nā hemahema liʻiliʻi a me ka hana kiʻekiʻe ma lalo o nā kūlana koʻikoʻi.

E leka uila mai iā mākou

Nā hiʻohiʻona

Nā Waiwai

Papa: Papa Hana (Dummy/Prime)
Nui: 6-'īniha ke anawaena
Anawaena: 150.25mm ± 0.25mm
Mānoanoa: >10mm (Loaʻa ka mānoanoa hiki ke hoʻopilikino ʻia ma ke noi)
Ke kuhikuhi ʻana o ka ʻili: 4° i ka <11-20> ± 0.2°, ka mea e hōʻoiaʻiʻo ai i ke kūlana kiʻekiʻe o ke aniani a me ka hoʻonohonoho pololei no ka hana ʻana i ka hāmeʻa.
Ke Kūlana Palahalaha Mua: <1-100> ± 5°, kahi hiʻohiʻona koʻikoʻi no ka ʻoki pono ʻana o ka ingot i loko o nā wafers a no ka ulu ʻana o ke kristal kūpono.
Lōʻihi Palahalaha Mua: 47.5mm ± 1.5mm, i hana ʻia no ka lawelawe maʻalahi a me ka ʻoki pololei.
Ke kū'ē ʻana: 0.015–0.0285 Ω·cm, kūpono no nā noi i nā hāmeʻa mana kiʻekiʻe.
Ka Density o ka Micropipe: <0.5, e hōʻoia ana i nā hemahema liʻiliʻi e hiki ke hoʻopilikia i ka hana o nā mea i hana ʻia.
BPD (Boron Pitting Density): <2000, he waiwai haʻahaʻa e hōʻike ana i ka maʻemaʻe kristal kiʻekiʻe a me ka haʻahaʻa o ka hemahema.
TSD (Threading Screw Dislocation Density): <500, e hōʻoiaʻiʻo ana i ka pono o nā mea no nā polokalamu hana kiʻekiʻe.
Nā Wahi Polytype: ʻAʻohe - ʻaʻohe hemahema polytype o ka ingot, e hāʻawi ana i ka maikaʻi o nā mea no nā noi kiʻekiʻe.
Nā Indents o ka Lihi: <3, me ka laulā a me ka hohonu o 1mm, e hōʻoiaʻiʻo ana i ka hōʻino liʻiliʻi o ka ʻili a me ka mālama ʻana i ka pono o ka ingot no ka ʻokiʻoki wafer maikaʻi.
Nā Māwae Lihi: 3, <1mm kēlā me kēia, me ka emi ʻana o ka hōʻino ʻana o ka lihi, e hōʻoiaʻiʻo ana i ka lawelawe palekana a me ka hana hou ʻana.
Hoʻopili ʻana: Pahu wafer - ua hoʻopili paʻa ʻia ka ingot SiC i loko o kahi pahu wafer e hōʻoia i ka lawe palekana a me ka lawelawe ʻana.

Nā noi

Nā Uila Mana:Hoʻohana nui ʻia ka ingot SiC 6-'īniha i ka hana ʻana i nā mea uila mana e like me MOSFET, IGBT, a me nā diode, he mau ʻāpana koʻikoʻi ia i nā ʻōnaehana hoʻololi mana. Hoʻohana nui ʻia kēia mau mea hana i nā inverters kaʻa uila (EV), nā hoʻokele motika ʻoihana, nā lako mana, a me nā ʻōnaehana mālama ikehu. ʻO ka hiki o SiC ke hana ma nā voltages kiʻekiʻe, nā alapine kiʻekiʻe, a me nā mahana koʻikoʻi e kūpono ia no nā noi kahi e paʻakikī ai nā mea hana silicon (Si) kuʻuna e hana pono.

Nā Kaʻa Uila (EV):I loko o nā kaʻa uila, he mea koʻikoʻi nā ʻāpana SiC no ka hoʻomohala ʻana i nā modula mana i nā inverters, nā mea hoʻololi DC-DC, a me nā mea hoʻoili ma luna o ka moku. ʻO ka conductivity thermal kiʻekiʻe o SiC e ʻae ai i ka hoʻemi ʻana i ka hana wela a me ka ʻoi aku ka maikaʻi o ka hoʻololi ʻana i ka mana, he mea nui ia no ka hoʻomaikaʻi ʻana i ka hana a me ka laulā hoʻokele o nā kaʻa uila. Eia kekahi, hiki i nā mea SiC ke hoʻohana i nā ʻāpana liʻiliʻi, māmā, a hilinaʻi hoʻi, e hāʻawi ana i ka hana holoʻokoʻa o nā ʻōnaehana EV.

Nā ʻōnaehana ikehu hou:He mea nui nā ʻoaka SiC i ka hoʻomohala ʻana i nā mea hoʻololi mana i hoʻohana ʻia i nā ʻōnaehana ikehu hou, me nā inverters solar, nā turbine makani, a me nā hoʻonā mālama ikehu. ʻO nā hiki ke lawelawe mana kiʻekiʻe o SiC a me ka hoʻokele wela kūpono e ʻae i ka hoʻololi ikehu kiʻekiʻe aʻe a me ka hilinaʻi i hoʻomaikaʻi ʻia i loko o kēia mau ʻōnaehana. ʻO kona hoʻohana ʻana i ka ikehu hou e kōkua i ka hoʻokele ʻana i nā hana honua i ka hoʻomau ʻana o ka ikehu.

Nā Kelepona:He kūpono hoʻi ka ingot SiC 6-'īniha no ka hana ʻana i nā ʻāpana i hoʻohana ʻia i nā noi RF (alapine lekiō) mana kiʻekiʻe. ʻO kēia mau mea e komo pū me nā amplifiers, oscillators, a me nā kānana i hoʻohana ʻia i nā ʻōnaehana kamaʻilio kelepona a me nā ʻōnaehana kamaʻilio ukali. ʻO ka hiki o SiC ke lawelawe i nā alapine kiʻekiʻe a me ka mana kiʻekiʻe e lilo ia i mea maikaʻi loa no nā mea kelepona e pono ai ka hana paʻa a me ka nalowale hōʻailona liʻiliʻi.

Aerospace a me ka Pale Kaua:ʻO ke kiʻekiʻe o ka uila haki o SiC a me ke kūʻē ʻana i nā mahana kiʻekiʻe e kūpono ia no nā noi aerospace a me nā pale kaua. Hoʻohana ʻia nā ʻāpana i hana ʻia mai nā ingots SiC i nā ʻōnaehana radar, nā kamaʻilio ukali, a me nā mea uila mana no nā mokulele a me nā mokulele. Hiki i nā mea i hoʻokumu ʻia i ka SiC ke hana ma lalo o nā kūlana koʻikoʻi i loaʻa i ka lewa a me nā wahi kiʻekiʻe.

ʻOihana Hana Hana:I ka automation ʻoihana, hoʻohana ʻia nā ʻāpana SiC i nā sensor, actuators, a me nā ʻōnaehana kaohi e pono ai ke hana i nā wahi ʻino. Hoʻohana ʻia nā mea hana SiC i nā mīkini e pono ai nā ʻāpana kūpono a lōʻihi hoʻi e hiki ke kū i nā mahana kiʻekiʻe a me nā pilikia uila.

Papa Kuhikuhi Huahana

Waiwai	Nā kikoʻī
Papa	Hana (Dummy/Prime)
Ka nui	6-'īniha
Anawaena	150.25mm ± 0.25mm
Mānoanoa	>10mm (Hiki ke hoʻopilikino ʻia)
Kūlana ʻIli	4° i ka ʻaoʻao <11-20> ± 0.2°
Kūlana Pālahalaha Mua	<1-100> ± 5°
Ka Lōʻihi Palahalaha Mua	47.5mm ± 1.5mm
Ke kū'ē ʻana	0.015–0.0285 Ω·cm
Ka nui o ka micropipe	<0.5
Ka nui o ka lua Boron (BPD)	<2000
Ka nui o ka hoʻoneʻe ʻana o ka wili wili (TSD)	<500
Nā Wahi Polytype	ʻAʻohe
Nā Indents Lihi	<3, 1mm ka laulā a me ka hohonu
Nā Māwae Lihi	3, <1mm/ea
Hoʻopili ʻana	Pahu wafer

Hopena

ʻO ka 6-'īniha SiC Ingot - N-type Dummy/Prime grade kahi mea kiʻekiʻe e hoʻokō ana i nā koi koʻikoʻi o ka ʻoihana semiconductor. ʻO kona conductivity thermal kiʻekiʻe, resistivity koʻikoʻi, a me ka haʻahaʻa o ka hemahema e lilo ia i koho maikaʻi loa no ka hana ʻana i nā mea uila mana holomua, nā ʻāpana kaʻa, nā ʻōnaehana kelepona, a me nā ʻōnaehana ikehu hou. ʻO ka mānoanoa hiki ke hoʻopilikino ʻia a me nā kikoʻī pololei e hōʻoiaʻiʻo ana e hiki ke hoʻopilikino ʻia kēia ingot SiC i nā ʻano noi like ʻole, e hōʻoiaʻiʻo ana i ka hana kiʻekiʻe a me ka hilinaʻi i nā wahi koi. No ka ʻike hou aku a i ʻole e kau i kahi kauoha, e ʻoluʻolu e kelepona i kā mākou hui kūʻai aku.