Silicon Carbide (SiC) Single-Crystal Substrate – 10×10mm Wafer

ʻO ka wehewehe pōkole:

ʻO ka 10 × 10mm Silicon Carbide (SiC) hoʻokahi-crystal substrate wafer he mea semiconductor hana kiʻekiʻe i hoʻolālā ʻia no ka mana uila a me nā noi optoelectronic. Ke hōʻike nei i ka conductivity thermal kūikawā, bandgap ākea, a me ka paʻa kemika maikaʻi loa, hāʻawi nā substrates SiC i ke kumu no nā mea hana e hana pono ana ma lalo o ke kiʻekiʻe kiʻekiʻe, ke alapine kiʻekiʻe, a me nā kūlana uila kiʻekiʻe. Hoʻokiʻoki pololei ʻia kēia mau substrates i loko o 10 × 10mm square chips, kūpono no ka noiʻi, prototyping, a me ka hana ʻana i nā mea hana.

E hoʻouna i ka leka uila iā mākou

Nā hiʻohiʻona

Hōʻike kikoʻī o ka Silicon Carbide (SiC) substrate wafer

ʻO ka ʻike nui o Silicon Carbide (SiC) substrate wafer

ʻO ka10×10mm Silicon Carbide (SiC) hoʻokahi-crystal substrate waferhe mea semiconductor hana kiʻekiʻe i hoʻolālā ʻia no ka mana uila a me nā noi optoelectronic. Ke hōʻike nei i ka conductivity thermal kūikawā, bandgap ākea, a me ke kūpaʻa kemika maikaʻi loa, hāʻawi ʻo Silicon Carbide (SiC) substrate wafer i ke kumu no nā polokalamu e hana pono ana ma lalo o ke kiʻekiʻe kiʻekiʻe, ke alapine kiʻekiʻe, a me nā kūlana uila kiʻekiʻe. Hoʻokiʻoki pololei ʻia kēia mau substrates10×10mm ʻāpana ʻāpana, kūpono no ka noiʻi, prototyping, a me ka hana ʻana i nā mea hana.

Ke kumu hana o Silicon Carbide (SiC) substrate wafer

Hana ʻia ʻo Silicon Carbide (SiC) substrate wafer ma o Physical Vapor Transport (PVT) a i ʻole nā ala ulu sublimation. Hoʻomaka ke kaʻina hana me ka pauka SiC maʻemaʻe kiʻekiʻe i hoʻouka ʻia i loko o kahi crucible graphite. Ma lalo o ka wela wela ma mua o 2,000°C a me kahi kaiapuni i hoʻomalu ʻia, hoʻoheheʻe ʻia ka pauda i loko o ka mahu a waiho hou ʻia ma luna o kahi aniani hua i hoʻonohonoho pono ʻia, e hana ana i kahi ingot aniani hoʻokahi.

Ke ulu aʻe ka SiC boule, loaʻa iā ia:

ʻOki ʻana: ʻOki ʻia nā ʻili daimana pololei i ka SiC i loko o nā wafers a i ʻole nā ʻāpana.

Lapa a me ka wili ʻana: Palahalaha ʻia nā ʻili e wehe i nā māka ʻike a loaʻa kahi mānoanoa like.

ʻO ka Polishing Mechanical Chemical (CMP): Loaʻa i kahi aniani mākaukau epi me ka haʻahaʻa haʻahaʻa o ka ʻili.

ʻO ka doping koho: Hiki ke hoʻokomo ʻia ka Nitrogen, aluminika, a i ʻole boron doping e hoʻoponopono i nā waiwai uila (n-type a i ʻole p-type).

Nānā maikaʻi: ʻO ka metrology kiʻekiʻe e hōʻoia i ka wafer flatness, ka mānoanoa like ʻole, a me ka defect density e hoʻokō i nā koi semiconductor-grade koʻikoʻi.

ʻO kēia kaʻina hana he nui i ka 10 × 10mm Silicon Carbide (SiC) substrate wafer chips i mākaukau no ka ulu epitaxial a i ʻole ka hana ʻana i nā mea hana.

ʻO nā hiʻohiʻona o ka Silicon Carbide (SiC) substrate wafer

ʻO ka Silicon Carbide (SiC) substrate wafer i hana mua ʻia4H-SiC or 6H-SiCpolytypes:

4H-SiC:Loaʻa i ka mobility electron kiʻekiʻe, e kūpono ana ia no nā mea mana e like me MOSFET a me Schottky diodes.
6H-SiC:Hāʻawi i nā waiwai kūʻokoʻa no RF a me nā ʻāpana optoelectronic.

ʻO nā waiwai kino nui o Silicon Carbide (SiC) substrate wafer:

ʻAkea pūhaka:~ 3.26 eV (4H-SiC) - hiki ke hoʻokuʻu i ka uila kiʻekiʻe a me nā poho hoʻololi haʻahaʻa.
ʻO ke kau wela wela:3–4.9 W/cm·K – hoʻopau pono i ka wela, e hōʻoia ana i ka paʻa o nā ʻōnaehana mana kiʻekiʻe.
ʻoʻoleʻa:~ 9.2 ma ka pālākiō Mohs - hōʻoia i ka lōʻihi o ka mīkini i ka wā o ka hana ʻana a me ka hana ʻana o ka mīkini.

Nā noi o Silicon Carbide (SiC) substrate wafer

ʻO ka versatility o Silicon Carbide (SiC) substrate wafer i mea waiwai iā lākou ma nā ʻoihana he nui:

Mana Electronics: Ke kumu no nā MOSFET, IGBT, a me Schottky diodes i hoʻohana ʻia i nā kaʻa uila (EVs), nā lako mana hana ʻenehana, a me nā mea hoʻohuli ikehu hou.

RF & Microwave Devices: Kākoʻo i nā transistors, amplifier, a me nā ʻāpana radar no 5G, satellite, a me nā noi pale.

Optoelectronics: Hoʻohana ʻia i nā LED UV, nā photodetectors, a me nā diodes laser kahi e koʻikoʻi ai ka māliko UV kiʻekiʻe a me ke kūpaʻa.

Aerospace & Defence: ʻO ka substrate hilinaʻi no nā mea uila kiʻekiʻe, paʻakikī paʻakikī.

Nā Hui Noiʻi a me nā Kulanui: He kūpono no nā haʻawina ʻepekema waiwai, hoʻomohala ʻana i nā polokalamu prototype, a me ka hoʻāʻo ʻana i nā kaʻina epitaxial hou.

Nā kikoʻī no ka Silicon Carbide (SiC) substrate wafer Chips

Waiwai	Waiwai
Nui	10mm × 10mm huinahā
mānoanoa	330–500 μm (hiki ke hoʻololi ʻia)
Polytype	4H-SiC a i ʻole 6H-SiC
Kūlana	Ka mokulele C, ke koʻi waho (0°/4°)
Hoʻopau ʻili	ʻO ka ʻaoʻao hoʻokahi a i ʻole ka ʻaoʻao ʻelua i poni ʻia; epi-makaukau loaʻa
Nā Koho Doping	N-ʻano a i ʻole P-ʻano
Papa	Ka helu noiʻi a i ʻole ka papa hana

FAQ o Silicon Carbide (SiC) substrate wafer

Q1: He aha ka mea i ʻoi aku ka maikaʻi o ka wafer substrate Silicon Carbide (SiC) ma mua o nā wafer silika kahiko?
Hāʻawi ʻo SiC i ka 10 × kiʻekiʻe kiʻekiʻe breakdown ikaika kahua, ʻoi aku ka maikaʻi o ka wela, a me nā poho hoʻololi haʻahaʻa, e lilo ia i mea kūpono no nā mea hana kiʻekiʻe, nā mana kiʻekiʻe ʻaʻole hiki ke kākoʻo ʻia ke silika.

Q2: Hiki ke hoʻolako ʻia ka 10 × 10mm Silicon Carbide (SiC) substrate wafer me nā papa epitaxial?
ʻAe. Hāʻawi mākou i nā substrate mākaukau epi a hiki ke hāʻawi i nā wafers me nā papa epitaxial maʻamau e hoʻokō i nā pono mana kūikawā a i ʻole nā pono hana LED.

Q3: Loaʻa nā nui maʻamau a me nā pae doping?
ʻOiaʻiʻo. ʻOiai ʻo 10 × 10mm chips ka mea maʻamau no ka noiʻi a me ka laʻana o nā hāmeʻa, loaʻa nā ana maʻamau, mānoanoa, a me nā profile doping ma ke noi.

Q4: Pehea ka lōʻihi o kēia mau wafers i nā kaiapuni koʻikoʻi?
Mālama ʻo SiC i ka kūpaʻa a me ka hana uila ma luna o 600 ° C a ma lalo o ka radiation kiʻekiʻe, e kūpono ana ia no ka aerospace a me nā mea uila.

E pili ana iā mākou

Hoʻokumu ʻo XKH i ka hoʻomohala ʻenehana kiʻekiʻe, ka hana ʻana, a me ke kūʻai ʻana i nā aniani optical kūikawā a me nā mea aniani hou. Hāʻawi kā mākou huahana i nā uila uila, nā mea hoʻohana uila, a me ka pūʻali koa. Hāʻawi mākou i nā ʻāpana optical Sapphire, nā uhi kelepona kelepona paʻa, Ceramics, LT, Silicon Carbide SIC, Quartz, a me nā wafer kristal semiconductor. Me ka ʻike akamai a me nā mea hana ʻoki ʻoki, ʻoi aku mākou i ka hoʻoili huahana maʻamau ʻole, me ka manaʻo e lilo i alakaʻi optoelectronic material high-tech ʻoihana.