ʻO ka Silicon Carbide (SiC) Single-Crystal Substrate - 10 × 10mm Wafer
Kiʻikuhi kikoʻī o ka wafer substrate Silicon Carbide (SiC)
ʻIkepili o ka wafer substrate Silicon Carbide (SiC)
ʻO kaʻO ka wafer substrate kristal hoʻokahi 10 × 10mm Silicon Carbide (SiC)he mea semiconductor hana kiʻekiʻe i hoʻolālā ʻia no nā uila mana hanauna hou a me nā noi optoelectronic. Me ka conductivity thermal kūikawā, ka bandgap ākea, a me ke kūpaʻa kemika maikaʻi loa, hāʻawi ka wafer substrate Silicon Carbide (SiC) i ke kahua no nā mea hana e hana pono ana ma lalo o ke kiʻekiʻe o ka mahana, ke alapine kiʻekiʻe, a me nā kūlana voltage kiʻekiʻe. Ua ʻoki pololei ʻia kēia mau substrates i lokonā ʻāpana huinahā 10 × 10mm, kūpono no ka noiʻi, ke kumu hoʻohālike, a me ka hana ʻana i nā hāmeʻa.
Kumu Hana o ka wafer substrate Silicon Carbide (SiC)
Hana ʻia nā wafer substrate Silicon Carbide (SiC) ma o ka Physical Vapor Transport (PVT) a i ʻole nā ʻano ulu sublimation. Hoʻomaka ke kaʻina hana me ka pauka SiC maʻemaʻe kiʻekiʻe i hoʻokomo ʻia i loko o kahi ipu hoʻoheheʻe graphite. Ma lalo o nā mahana koʻikoʻi ma mua o 2,000°C a me kahi kaiapuni i kāohi ʻia, hoʻoheheʻe ka pauka i loko o ka mahu a waiho hou ma luna o kahi kristal hua i hoʻonohonoho pono ʻia, e hana ana i kahi ingot kristal hoʻokahi nui, i hoʻemi ʻia ka hemahema.
Ke ulu ka boule SiC, e hana ia:
- ʻOki ʻana i nā ʻoaka ingot: ʻOki nā ʻoki uea daimana kikoʻī i ka ingot SiC i loko o nā wafers a i ʻole nā ʻāpana.
- Ke kāhili ʻana a me ka wili ʻana: Hoʻopālahalaha ʻia nā ʻili e wehe i nā māka o ka ʻoki a loaʻa kahi mānoanoa like.
- ʻO ka Polishing Mechanical Chemical (CMP): Hoʻokō i kahi hoʻopau aniani epi-ready me ka ʻoʻoleʻa ʻili haʻahaʻa loa.
- Koho doping: Hiki ke hoʻokomo ʻia ka doping naikokene, aluminika, a boron paha e hoʻopilikino i nā waiwai uila (ʻano-n a i ʻole ʻano-p).
- Nānā maikaʻi: Hōʻoia ka metrology holomua i ka palahalaha o ka wafer, ke kūlike o ka mānoanoa, a me ka nui o nā kīnā e hoʻokō i nā koi semiconductor-grade koʻikoʻi.
ʻO kēia kaʻina hana he nui nā ʻanuʻu e hopena i nā ʻāpana wafer substrate 10 × 10mm Silicon Carbide (SiC) ikaika i mākaukau no ka ulu ʻana o epitaxial a i ʻole ka hana pololei ʻana i nā mea hana.
Nā ʻano mea o ka wafer substrate Silicon Carbide (SiC)
ʻO ka wafer substrate Silicon Carbide (SiC) i hana nui ʻia me4H-SiC or 6H-SiCnā ʻano polytypes:
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4H-SiC:Loaʻa iā ia ka neʻe ʻana o ka electron kiʻekiʻe, kūpono ia no nā mea mana e like me MOSFET a me Schottky diodes.
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6H-SiC:Hāʻawi i nā waiwai kūikawā no nā ʻāpana RF a me nā optoelectronic.
Nā waiwai kino koʻikoʻi o ka wafer substrate Silicon Carbide (SiC):
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Ka laulā ākea:~3.26 eV (4H-SiC) - hiki ke hoʻoikaika i ke anakahi uila haki kiʻekiʻe a me nā pohō hoʻololi haʻahaʻa.
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Ka hoʻokele wela:3–4.9 W/cm·K – hoʻopuehu pono i ka wela, e hōʻoiaʻiʻo ana i ke kūpaʻa i nā ʻōnaehana mana kiʻekiʻe.
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Paʻakikī:~9.2 ma ka unahi Mohs - hōʻoia i ka paʻa mechanical i ka wā o ka hana ʻana a me ka hana ʻana o ka hāmeʻa.
Nā noi o ka wafer substrate Silicon Carbide (SiC)
ʻO ka versatility o ka Silicon Carbide (SiC) substrate wafer e hoʻolilo iā lākou i mea waiwai ma nā ʻoihana he nui:
Nā Uila Mana: Ke kumu no nā MOSFET, IGBT, a me Schottky diodes i hoʻohana ʻia i nā kaʻa uila (EV), nā lako mana ʻoihana, a me nā mea hoʻohuli ikehu hou.
Nā Hāmeʻa RF a me Microwave: Kākoʻo i nā transistors, amplifiers, a me nā ʻāpana radar no 5G, satellite, a me nā noi pale.
Optoelectronics: Hoʻohana ʻia i nā LED UV, nā photodetectors, a me nā diodes laser kahi e koʻikoʻi ai ka transparency UV kiʻekiʻe a me ke kūpaʻa.
Aerospace & Defense: ʻO kahi mea hilinaʻi no nā mea uila i hoʻopaʻakikī ʻia e ka radiation i ka mahana kiʻekiʻe.
Nā ʻOihana Noiʻi a me nā Kulanui: Kūpono no nā haʻawina ʻepekema mea, ka hoʻomohala ʻana i nā hāmeʻa prototype, a me ka hoʻāʻo ʻana i nā kaʻina hana epitaxial hou.

Nā kikoʻī no nā ʻāpana wafer substrate Silicon Carbide (SiC)
| Waiwai | Waiwai |
|---|---|
| Ka nui | 10mm × 10mm huinahā |
| Mānoanoa | 330–500 μm (hiki ke hoʻopilikino ʻia) |
| Polytype | 4H-SiC a i ʻole 6H-SiC |
| Hoʻonohonoho | Papa-C, ma waho o ke axis (0°/4°) |
| Hoʻopau ʻili | Hoʻopili ʻia ka ʻaoʻao hoʻokahi a ʻelua paha; loaʻa ka mākaukau epi |
| Nā Koho Doping | ʻAno-N a i ʻole ʻano-P |
| Papa | Papa noiʻi a i ʻole ka papa hāmeʻa |
Nā nīnau i nīnau pinepine ʻia no ka wafer substrate Silicon Carbide (SiC)
Q1: He aha ka mea e ʻoi aku ai ka maikaʻi o ka wafer substrate Silicon Carbide (SiC) ma mua o nā wafers silicon kuʻuna?
Hāʻawi ʻo SiC i ka ikaika o ke kahua haki he 10× kiʻekiʻe, ke kūpaʻa wela kiʻekiʻe, a me nā pohō hoʻololi haʻahaʻa, e kūpono ana no nā mea hana kiʻekiʻe, mana kiʻekiʻe i hiki ʻole i ka silicon ke kākoʻo.
Q2: Hiki ke hoʻolako ʻia ka wafer substrate 10 × 10mm Silicon Carbide (SiC) me nā papa epitaxial?
ʻAe. Hāʻawi mākou i nā substrates epi-ready a hiki ke hāʻawi i nā wafers me nā papa epitaxial maʻamau e hoʻokō i nā pono hana mana kikoʻī a i ʻole nā pono hana LED.
Q3: Loaʻa nā nui maʻamau a me nā pae doping?
ʻAe loa. ʻOiai ʻo nā ʻāpana 10 × 10mm ka mea maʻamau no ka noiʻi a me ka laʻana ʻana o ka hāmeʻa, loaʻa nā ana maʻamau, nā mānoanoa, a me nā ʻano doping ma ke noi ʻana.
Q4: Pehea ka lōʻihi o kēia mau wafers i nā wahi koʻikoʻi?
Mālama ʻo SiC i ka kūpaʻa o ke kūkulu ʻana a me ka hana uila ma luna o 600°C a ma lalo o ke kiʻekiʻe o ka radiation, e kūpono ana no nā mea uila aerospace a me nā mea uila koa.
E pili ana iā mākou
He loea ʻo XKH i ka hoʻomohala ʻenehana kiʻekiʻe, ka hana ʻana, a me ke kūʻai aku ʻana i ke aniani optical kūikawā a me nā mea kristal hou. Lawelawe kā mākou huahana i nā mea uila optical, nā mea uila mea kūʻai aku, a me ka pūʻali koa. Hāʻawi mākou i nā ʻāpana optical Sapphire, nā uhi lens kelepona paʻalima, Ceramics, LT, Silicon Carbide SIC, Quartz, a me nā wafers kristal semiconductor. Me ka ʻike loea a me nā lako hana kiʻekiʻe, ʻoi aku mākou i ka hana ʻana i nā huahana maʻamau ʻole, me ka manaʻo e lilo i alakaʻi i nā mea optoelectronic ʻoihana ʻenehana kiʻekiʻe.












