Waʻa Wafer Silicon Carbide (SiC)

Kiʻi i hōʻike ʻia no ka moku wafer Silicon Carbide (SiC)

Wehewehe Pōkole:

ʻO ka waʻa wafer Silicon Carbide (SiC) he mea lawe kaʻina hana semiconductor i hana ʻia me ka mea SiC maʻemaʻe kiʻekiʻe, i hoʻolālā ʻia e paʻa a lawe i nā wafers i ka wā o nā kaʻina hana wela kiʻekiʻe koʻikoʻi e like me ka epitaxy, oxidation, diffusion, a me annealing.

E leka uila mai iā mākou

Nā hiʻohiʻona

Kiʻikuhi kikoʻī

ʻIkepili o ke Aniani Quartz

Me ka wikiwiki o ka hoʻomohala ʻana o nā semiconductors mana a me nā mea hana bandgap ākea, ke kū nei nā waʻa quartz maʻamau i nā palena e like me ke ʻano ʻino i nā mahana kiʻekiʻe, ka haumia nui o nā ʻāpana, a me ke ola lawelawe pōkole. ʻO nā waʻa wafer SiC, e hōʻike ana i ke kūpaʻa wela kiʻekiʻe, ka haumia haʻahaʻa, a me ke ola lōʻihi, ke pani nei i nā waʻa quartz a lilo i koho makemake ʻia i ka hana ʻana i nā mea hana SiC.

Nā Hiʻohiʻona Koʻikoʻi

1. Nā Pōmaikaʻi Mea

Hana ʻia mai ka SiC maʻemaʻe kiʻekiʻe mepaʻakikī kiʻekiʻe a me ka ikaika.
ʻO ke kiko heheʻe ma luna o 2700°C, ʻoi aku ke kiʻekiʻe ma mua o ka quartz, e hōʻoiaʻiʻo ana i ka paʻa lōʻihi ma nā wahi koʻikoʻi.

2. Nā Waiwai Wela

ʻO ke alakaʻi wela kiʻekiʻe no ka hoʻoili wela wikiwiki a like, e hoʻemi ana i ke kaumaha wafer.
Hoʻohālikelike pono ke koina hoʻonui wela (CTE) i nā substrates SiC, e hōʻemi ana i ke kulou ʻana o ka wafer a me ka nahā ʻana.

3. Paʻa Kemika

Paʻa ma lalo o ke ana wela kiʻekiʻe a me nā lewa like ʻole (H₂, N₂, Ar, NH₃, a pēlā aku).
ʻO ke kūpaʻa oxidation maikaʻi loa, e pale ana i ka decomposition a me ka hanauna ʻāpana.

4. Hana Hana

ʻO ka ʻili laumania a mānoanoa e hōʻemi i ka hoʻokahe ʻana o nā ʻāpana a me ka haumia.
Mālama i ke kūpaʻa o ka nui a me ka hiki ke ukana ma hope o ka hoʻohana lōʻihi.

5. Ka Pono o ke Kumukūʻai

ʻOi aku ka lōʻihi o ke ola lawelawe ma mua o nā waʻa quartz 3-5 mau manawa.
Hoʻemi ʻia ka alapine mālama haʻahaʻa, e hōʻemi ana i ka downtime a me nā kumukūʻai hoʻololi.

Nā noi

ʻO ka Epitaxy SiCKe kākoʻo nei i nā substrates SiC 4-'īniha, 6-'īniha, a me 8-'īniha i ka wā o ka ulu ʻana o ka epitaxial wela kiʻekiʻe.
Hana Hana ManaKūpono no nā SiC MOSFET, Schottky Barrier Diodes (SBD), IGBT, a me nā mea hana ʻē aʻe.
Ka Hana WelaNā kaʻina hana hoʻoheheʻe ʻana, nitridation, a me ke kalapona.
ʻOkika a me ka Hoʻolaha: Kahua kākoʻo wafer paʻa no ka hoʻokeʻokeʻo ʻana a me ka hoʻolaha ʻana i ka mahana kiʻekiʻe.

Nā Kikoʻī ʻenehana

Mea	Nā kikoʻī
Mea Hana	ʻO ka Silicon Carbide maʻemaʻe kiʻekiʻe (SiC)
Ka nui o ka Wafer	4-'īniha / 6-'īniha / 8-'īniha (hiki ke hoʻopilikino ʻia)
Ka Mahana Hana Loa.	≤ 1800°C
Hoʻonui Wela CTE	4.2 × 10⁻⁶ /K (kokoke i ka substrate SiC)
Ka Hoʻokele Wela	120–200 W/m·K
ʻO ka ʻōʻili	Ra < 0.2 μm
Parallelism	±0.1 mm
Ola lawelawe	≥ 3 × ʻoi aku ka lōʻihi ma mua o nā waʻa quartz

Hoʻohālikelike: Waʻa Quartz vs. Waʻa SiC

Ana	Waʻa Quartz	Waʻa SiC
Ke kū'ē ʻana i ka mahana	≤ 1200°C, hoʻololi ʻia ke ʻano ma ke ana wela kiʻekiʻe.	≤ 1800°C, kūpaʻa ka wela
Hoʻohālikelike CTE me SiC	Nui ka mismatch, ka pilikia o ke kaumaha wafer	Hoʻohālikelike kokoke, hōʻemi i ka haki ʻana o ka wafer
Ka haumia ʻana o nā ʻāpana	Kiʻekiʻe, hoʻopuka i nā mea haumia	ʻIli haʻahaʻa, laumania a mānoanoa
Ola lawelawe	Hoʻololi pōkole, pinepine	Lōʻihi, 3–5× lōʻihi ke ola
Kaʻina Hana Kūpono	ʻO ka epitaxy Si maʻamau	Hoʻonohonoho ʻia no nā SiC epitaxy a me nā polokalamu mana

Nā nīnau i nīnau pinepine ʻia - Nā waʻa wafer Silicon Carbide (SiC)

1. He aha ka waʻa wafer SiC?

ʻO ka waʻa wafer SiC kahi mea lawe kaʻina hana semiconductor i hana ʻia me ka silicon carbide maʻemaʻe kiʻekiʻe. Hoʻohana ʻia ia e paʻa a lawe i nā wafers i ka wā o nā kaʻina hana wela kiʻekiʻe e like me ka epitaxy, oxidation, diffusion, a me ka annealing. Ke hoʻohālikelike ʻia me nā waʻa quartz kuʻuna, hāʻawi nā waʻa wafer SiC i ke kūpaʻa wela kiʻekiʻe, ka haumia haʻahaʻa, a me ke ola lawelawe lōʻihi.

2. No ke aha e koho ai i nā waʻa wafer SiC ma mua o nā waʻa quartz?

Ke kū'ē wela kiʻekiʻePaʻa a hiki i 1800°C vs. quartz (≤1200°C).
Hoʻokūkū CTE maikaʻi aʻeKokoke i nā substrates SiC, e hoʻemi ana i ke koʻikoʻi wafer a me ka nahā ʻana.
Ka hanauna ʻāpana haʻahaʻaʻO ka ʻili laumania a mānoanoa e hōʻemi ana i ka haumia.
ʻOi aku ka lōʻihi o ke ola: 3–5 mau manawa ʻoi aku ka lōʻihi ma mua o nā waʻa quartz, e hoʻemi ana i ke kumukūʻai o ka loaʻa ʻana.

3. He aha nā nui wafer e hiki i nā waʻa wafer SiC ke kākoʻo?

Hāʻawi mākou i nā hoʻolālā maʻamau no4-'īniha, 6-'īniha, a me 8-'īnihanā wafers, me ka hoʻopilikino piha i loaʻa e hoʻokō i nā pono o nā mea kūʻai aku.

4. Ma nā kaʻina hana hea e hoʻohana pinepine ʻia ai nā waʻa wafer SiC?

Ka ulu ʻana o ka epitaxial SiC
Hana ʻana i nā hāmeʻa semiconductor mana (SiC MOSFETs, SBDs, IGBTs)
ʻO ka hoʻomehana wela kiʻekiʻe, ka nitridation, a me ke kalapona
Nā kaʻina hana oxidation a me ka diffusion

E pili ana iā mākou

He loea ʻo XKH i ka hoʻomohala ʻenehana kiʻekiʻe, ka hana ʻana, a me ke kūʻai aku ʻana i ke aniani optical kūikawā a me nā mea kristal hou. Lawelawe kā mākou huahana i nā mea uila optical, nā mea uila mea kūʻai aku, a me ka pūʻali koa. Hāʻawi mākou i nā ʻāpana optical Sapphire, nā uhi lens kelepona paʻalima, Ceramics, LT, Silicon Carbide SIC, Quartz, a me nā wafers kristal semiconductor. Me ka ʻike loea a me nā lako hana kiʻekiʻe, ʻoi aku mākou i ka hana ʻana i nā huahana maʻamau ʻole, me ka manaʻo e lilo i alakaʻi i nā mea optoelectronic ʻoihana ʻenehana kiʻekiʻe.