Pākuʻi
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ʻO ka wafer 12-'īniha 4H-SiC no nā aniani AR
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Nā Mea Hoʻokele Wera o ka Hui Diamond-Copper
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ʻO ka HPSI SiC Wafer ≥90% Transmittance Optical Grade no nā aniani AI/AR
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ʻO ka Semi-Insulating Silicon Carbide (SiC) Substrate High-Purity no nā aniani Ar
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Nā Wafers Epitaxial 4H-SiC no nā MOSFET Voltage Ultra-High (100–500 μm, 6 ʻīniha)
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ʻO SICOI (Silicon Carbide ma ka Insulator) Wafers SiC Film ON Silicon
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ʻO ka Sapphire Wafer Blank High Purity Raw Sapphire Substrate no ka hana ʻana
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ʻO ke aniani hua huinaha Sapphire - Substrate i kuhikuhi pono ʻia no ka ulu ʻana o ka Sapphire Synthetic
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ʻO ka Silicon Carbide (SiC) Single-Crystal Substrate - 10 × 10mm Wafer
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ʻO ka wafer Epitaxial 4H-N HPSI SiC 6H-N 6H-P 3C-N SiC no MOS a i ʻole SBD
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ʻO ka Wafer Epitaxial SiC no nā mea hana mana - 4H-SiC, ʻano N, Low Defect Density
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ʻAno 4H-N SiC Epitaxial Wafer Kiʻekiʻe Voltage Kiʻekiʻe Frequency