Pāpaʻa
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2 'īniha 6H-N Silicon Carbide Substrate Sic Wafer Papalua Polished Conductive Prime Grade Mos Grade
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SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI（Semi-Insulating maemae kiʻekiʻe ） 4H/6H-P 3C -n ʻano 2 3 4 6 8 ʻīniha loaʻa
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sapphire ingot 3inihi 4inihi 6inihi Monocrystal CZ KY ke ʻano hiki ke hana ʻia
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ʻO ke apo sapphire i hana ʻia me nā mea sapphire synthetic ʻO ka paʻakikī Mohs a hiki ke hoʻololi ʻia o 9
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2 ʻīniha Sic silikon carbide substrate 6H-N ʻAno 0.33mm 0.43mm ʻaoʻao ʻelua hoʻoliʻi kiʻekiʻe.
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GaAs kiʻekiʻe-mana epitaxial wafer substrate gallium arsenide wafer mana laser hawewe lōʻihi 905nm no ka laser lapaʻau lapaʻau.
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GaAs laser epitaxial wafer 4 'īniha 6 'īniha VCSEL puka kū i luna o ka hoʻokuʻu ʻana i ka lōʻihi hawewe laser 940nm hui hoʻokahi.
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2inihi 3inihi 4inihi InP epitaxial wafer substrate APD mea ʻike kukui no nā kamaʻilio fiber optic a i ʻole LiDAR
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apo sapphire apo sapphire a pau i hana ʻia mai ka sapphire ʻano mea sapphire i hana ʻia e ka lab Transparent.
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Sapphire ingot dia 4inch× 80mm Monocrystalline Al2O3 99.999% Single Crystal
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Sapphire Prism Sapphire Lens Maopopo kiʻekiʻe Al2O3 BK7 JGS1 JGS2 Material Optical Instrument
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SiC substrate 3inihi 350um mānoanoa HPSI ʻano Prime Grade Dummy grade