Pāpaʻa
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Silicon Carbide SiC Ingot 6inch N type Dummy/prime grade mānoanoa hiki ke hana maʻamau
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6 ma Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
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ʻO SiC Ingot 4H ʻano Dia 4 iniha 6 ʻīniha mānoanoa 5-10mm Research / Dummy Grade
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3 'īniha Maʻemaʻe Kiʻekiʻe (Undoped)Silicon Carbide Wafers Semi-Insulating Sic Substrates (HPSl)
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6 iniha sapphire Boule sapphire blank single crystal Al2O3 99.999%
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ʻO Sic Substrate Silicon Carbide Wafer 4H-N ʻAno Kiʻekiʻe Paʻa Paʻa Paʻa Kūʻai Kūʻai Kūʻai Nui
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2'īniha Silicon Carbide Wafer 6H-N Type Prime Grade Research Grade Dummy Grade 330μm 430μm Mānoanoa
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2 iniha kilikaka carbide substrate 6H-N ʻaoʻao ʻelua ʻaoʻao poni anawaena 50.8mm papa hana noiʻi papa
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p-type 4H/6H-P 3C-N TYPE SIC substrate 4 iniha 〈111〉± 0.5°Zero MPD
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SiC substrate P-type 4H/6H-P 3C-N 4 iniha me ka mānoanoa o 350um Papa hana Dummy grade
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4H/6H-P 6inch SiC wafer Zero MPD papa Hana Hana Dummy Papa
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P-type SiC wafer 4H/6H-P 3C-N 6 iniha mānoanoa 350 μm me ka Primary Flat Orientation