Pākuʻi
-
ʻO ka wafer InSb 2'īniha 3'īniha undoped Ntype P type orientation 111 100 no nā mea ʻike Infrared
-
Nā wafer Indium Antimonide (InSb) ʻano N ʻano P ʻano Epi mākaukau ʻole ʻia Te doped a i ʻole Ge doped 2 ʻīniha 3 ʻīniha 4 ʻīniha ka mānoanoa
-
SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C ʻano 2 ʻīniha 3 ʻīniha 4 ʻīniha 6 ʻīniha 8 ʻīniha
-
ʻO ka ʻāpana sapphire 3'iniha 4'iniha 6'iniha Monocrystal CZ KY method Customizable
-
2 ʻīniha Sic silicon carbide substrate 6H-N ʻAno 0.33mm 0.43mm ʻaoʻao pālua ka poli ʻana ʻO ka hoʻohana ʻana i ka mana wela kiʻekiʻe haʻahaʻa
-
ʻO GaAs mana kiʻekiʻe epitaxial wafer substrate gallium arsenide wafer mana laser wavelength 905nm no ka mālama lapaʻau laser
-
ʻO ka wafer epitaxial laser GaAs 4 ʻīniha 6 ʻīniha VCSEL vertical cavity surface emission laser wavelength 940nm single junction
-
2'īniha 3'īniha 4'īniha InP epitaxial wafer substrate APD mea ʻike kukui no nā kamaʻilio fiber optic a i ʻole LiDAR
-
apo sapphire i hana ʻia me ka mea sapphire synthetic. Paʻakikī Mohs maopopo a hiki ke hoʻopilikino ʻia o 9.
-
apo sapphire apo sapphire āpau i hana ʻia mai ka sapphire mea sapphire moakaka i hana ʻia i loko o ka lab
-
ʻO ke anawaena o ka ʻiota Sapphire 4 ʻīniha × 80mm Monocrystalline Al2O3 99.999% Crystal Hoʻokahi
-
ʻO ka Prism Sapphire Lens Transparency kiʻekiʻe Al2O3 BK7 JGS1 JGS2 Mea Hana Optical