Pāpaʻa
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GaAs laser epitaxial wafer 4 'īniha 6 'īniha VCSEL puka kū i luna o ka hoʻokuʻu ʻana i ka lōʻihi hawewe laser 940nm hui hoʻokahi.
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2inihi 3inihi 4inihi InP epitaxial wafer substrate APD mea ʻike kukui no nā kamaʻilio fiber optic a i ʻole LiDAR
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ʻO ke apo sapphire i hana ʻia me nā mea sapphire synthetic Paʻa Mohs a hiki ke hana ʻia o 9
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apo sapphire apo sapphire a pau i hana ʻia mai ka sapphire ʻano mea sapphire i hana ʻia e ka lab Transparent.
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Sapphire ingot dia 4inch× 80mm Monocrystalline Al2O3 99.999% Single Crystal
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Sapphire Prism Sapphire Lens Maopopo kiʻekiʻe Al2O3 BK7 JGS1 JGS2 Material Optical Instrument
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SiC substrate 3inihi 350um mānoanoa HPSI ʻano Prime Grade Dummy grade
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Silicon Carbide SiC Ingot 6inch N type Dummy/prime grade mānoanoa hiki ke hana maʻamau
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6 i loko o Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
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ʻO SiC Ingot 4H ʻano Dia 4 ʻīniha 6 ʻīniha mānoanoa 5-10mm Research / Dummy Grade
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6 iniha sapphire Boule sapphire blank single crystal Al2O3 99.999%
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ʻO Sic Substrate Silicon Carbide Wafer 4H-N ʻAno Kiʻekiʻe Paʻa Paʻa Kūʻē Kūʻē Kūleʻa Kūʻai Nui