3'īniha Dia76.2mm SiC substrates HPSI Prime Research a me Dummy grade

ʻO ke kumu alakaʻi: pili i ke kū'ē ʻana o ka substrate silicon carbide 15 ~ 30mΩ-cm. ʻO ka wafer epitaxial silicon carbide i ulu ʻia mai ka substrate silicon carbide conductive hiki ke hana hou ʻia i mau mea mana, i hoʻohana nui ʻia i nā kaʻa ikehu hou, nā photovoltaics, nā grids akamai, a me ka halihali kaʻaahi.

ʻO ka substrate semi-insulating e pili ana i ka resistivity i ʻoi aku ma mua o 100000Ω-cm silicon carbide substrate, i hoʻohana nui ʻia i ka hana ʻana o nā mea hana alapine uila microwave gallium nitride, ʻo ia ke kumu o ke kahua kamaʻilio uea ʻole.

He ʻāpana kumu ia ma ke kahua o ke kamaʻilio uea ʻole.

Hoʻohana ʻia nā substrates conductive a me semi-insulating silicone carbide i nā ʻano mea uila like ʻole a me nā mea mana, me kēia mau mea:

Nā mea hana semiconductor mana kiʻekiʻe (conductive): Loaʻa i nā substrates Silicon carbide ka ikaika kiʻekiʻe o ke kahua breakdown a me ka conductivity thermal, a kūpono no ka hana ʻana o nā transistors mana kiʻekiʻe a me nā diode a me nā mea hana ʻē aʻe.

Nā mea uila RF (semi-insulated): Loaʻa i nā substrates Silicon Carbide ka wikiwiki hoʻololi kiʻekiʻe a me ka hoʻomanawanui mana, kūpono no nā noi e like me nā amplifiers mana RF, nā mea microwave a me nā hoʻololi alapine kiʻekiʻe.

Nā mea hana Optoelectronic (semi-insulated): Loaʻa i nā substrates Silicon carbide kahi ākea ikehu a me ke kūpaʻa wela kiʻekiʻe, kūpono no ka hana ʻana i nā photodiodes, nā cell solar a me nā diode laser a me nā mea hana ʻē aʻe.

Nā mea ʻike mahana (conductive): Loaʻa i nā substrates carbide Silicon ka conductivity thermal kiʻekiʻe a me ke kūpaʻa thermal, kūpono no ka hana ʻana o nā mea ʻike wela kiʻekiʻe a me nā mea ana wela.

ʻO ke kaʻina hana a me ka hoʻopili ʻana o nā substrates conductive a me semi-insulating silicon carbide he ākea ākea o nā kahua a me nā hiki, e hāʻawi ana i nā mea hou no ka hoʻomohala ʻana i nā mea uila a me nā mea mana.