3 iniha Dia76.2mm SiC substrates HPSI Prime Research and Dummy grade

Conductive substrate: pili i ka resistivity o 15 ~ 30mΩ-cm silicon carbide substrate.Hiki ke hana hou ʻia ka silicon carbide epitaxial wafer mai ka conductive silicon carbide substrate i nā mana mana, i hoʻohana nui ʻia i nā kaʻa ikehu hou, photovoltaics, smart grids, a me ka lawe kaʻaahi.

ʻO ka semi-insulating substrate e pili ana i ka resistivity kiʻekiʻe ma mua o 100000Ω-cm silicon carbide substrate, i hoʻohana nui ʻia i ka hana ʻana i nā mea uila uila uila gallium nitride, ʻo ia ke kumu o ke kahua kamaʻilio kelepona.

He ʻāpana kumu ia ma ke kahua o ke kamaʻilio uea.

Hoʻohana ʻia nā substrates carbide conductive a me nā semi-insulating substrates i kahi ākea o nā mea uila a me nā mana mana, e komo pū ana akā ʻaʻole i kaupalena ʻia i kēia mau mea:

ʻO nā mea hana semiconductor mana kiʻekiʻe (conductive): ʻO nā substrate silikoni carbide he kiʻekiʻe ka ikaika o ka māla a me ka conductivity thermal, a kūpono no ka hana ʻana i nā transistors mana kiʻekiʻe a me nā diodes a me nā mea hana ʻē aʻe.

Nā mea uila uila RF (semi-insulated): He kiʻekiʻe ka wikiwiki o ka hoʻololi ʻana o nā substrate Silicon Carbide a me ka hoʻomanawanui mana, kūpono no nā noi e like me nā mana RF power amplifier, nā mīkini microwave a me nā hoʻololi kiʻekiʻe.

Nā mea optoelectronic (semi-insulated): ʻO nā substrate Silicon carbide he ākea ākea ākea a me ke kūpaʻa wela kiʻekiʻe, kūpono no ka hana ʻana i nā photodiodes, nā mea solar a me nā diodes laser a me nā mea hana ʻē aʻe.

Nā meaʻike wela (conductive): He kiʻekiʻe ka conductivity wela o nā substrate Silicon carbide a me ke kūpaʻa wela, kūpono no ka hana ʻana i nā mea ʻike wela kiʻekiʻe a me nā mea ana wela.

ʻO ke kaʻina hana a me ka hoʻohana ʻana i ka silicon carbide conductive a me ka semi-insulating substrates he ākea ākea o nā māla a me nā mea hiki, e hāʻawi ana i nā mea hou no ka hoʻomohala ʻana i nā mea uila a me nā mea mana.