ʻO nā Wafers SiC 2 ʻīniha 6H a i ʻole 4H Semi-Insulating SiC Substrates Dia50.8mm
Ka hoʻohana ʻana o ka substrate silicon carbide
Hiki ke hoʻokaʻawale ʻia ke substrate carbide silikona i ke ʻano conductive a me ke ʻano semi-insulating e like me ke kū'ē ʻana. Hoʻohana nui ʻia nā mea hana silicon carbide conductive i nā kaʻa uila, ka hana mana photovoltaic, ke kaʻaahi kaʻaahi, nā kikowaena ʻikepili, ka hoʻouka ʻana a me nā ʻoihana ʻē aʻe. He koi nui ka ʻoihana kaʻa uila no nā substrates silicon carbide conductive, a i kēia manawa, ua hoʻolālā ʻo Tesla, BYD, NIO, Xiaopeng a me nā ʻoihana kaʻa ikehu hou e hoʻohana i nā mea hana a i ʻole nā module silicon carbide discrete.
Hoʻohana nui ʻia nā mea hana silicon carbide semi-insulated i nā kamaʻilio 5G, nā kamaʻilio kaʻa, nā noi pale aupuni, ka hoʻoili ʻikepili, aerospace a me nā kahua ʻē aʻe. Ma ka hoʻonui ʻana i ka papa epitaxial gallium nitride ma luna o ka substrate silicon carbide semi-insulated, hiki ke hana hou ʻia ka wafer epitaxial gallium nitride i hoʻokumu ʻia i ka silicon i nā mea hana RF microwave, i hoʻohana nui ʻia ma ke kahua RF, e like me nā mea hoʻoikaika mana ma ke kamaʻilio 5G a me nā mea ʻike lekiō ma ka pale aupuni.
ʻO ka hana ʻana o nā huahana substrate silicon carbide e pili ana i ka hoʻomohala ʻana i nā lako, ka synthesis mea maka, ka ulu ʻana o ke kristal, ka ʻoki ʻana i ke kristal, ka hana ʻana i ka wafer, ka hoʻomaʻemaʻe a me ka hoʻāʻo ʻana, a me nā loulou ʻē aʻe he nui. Ma ke ʻano o nā mea maka, hāʻawi ka ʻoihana Songshan Boron i nā mea maka silicon carbide no ka mākeke, a ua hoʻokō i nā kūʻai liʻiliʻi. ʻO nā mea semiconductor hanauna ʻekolu i hōʻike ʻia e silicon carbide e pāʻani i kahi kuleana koʻikoʻi i ka ʻoihana hou, me ka wikiwiki o ke komo ʻana o nā kaʻa ikehu hou a me nā noi photovoltaic, ke kokoke nei ke koi no ka substrate silicon carbide e hoʻokomo i kahi kiko inflection.
Kiʻikuhi kikoʻī





