2 'īniha SiC Wafers 6H a i ʻole 4H Semi-Insulating SiC Substrates Dia50.8mm

Hiki ke hoʻokaʻawale ʻia ka substrate silicone carbide i ke ʻano conductive a me ke ʻano semi-insulating e like me ka resistivity. Hoʻohana nui ʻia nā mea hana silicon carbide conductive i nā kaʻa uila, photovoltaic power generation, rail transit, data centers, charging and other infrastructure. He koi nui ka ʻoihana kaʻa uila no nā substrates silicon carbide conductive, a i kēia manawa, ua hoʻolālā ʻo Tesla, BYD, NIO, Xiaopeng a me nā ʻoihana kaʻa kaʻa hou e hoʻohana i nā ʻenehana carbide discrete a i ʻole modules.

Hoʻohana nui ʻia nā hāmeʻa carbide silicon semi-insulated i nā kamaʻilio 5G, nā kamaʻilio kaʻa, nā noi pale aupuni, ka lawe ʻana i ka ʻikepili, ka aerospace a me nā kahua ʻē aʻe. Ma ka ulu ʻana o ka gallium nitride epitaxial layer ma ka semi-insulated silicon carbide substrate, hiki ke hana hou ʻia ka wafer gallium nitride epitaxial wafer i loko o nā mea microwave RF, i hoʻohana nui ʻia i ka pā RF, e like me nā mana amplifier i ke kamaʻilio 5G a nā mea ʻike lekiō i ka pale aupuni.

ʻO ka hana ʻana o nā huahana silicon carbide substrate e pili ana i ka hoʻomohala ʻana i nā mea hana, ka synthesis raw material, ka ulu ʻana o ka kristal, ka ʻoki ʻana i ke aniani, ka hana wafer, ka hoʻomaʻemaʻe a me ka hoʻāʻo ʻana, a me nā loulou ʻē aʻe. Ma ke ʻano o nā kumu waiwai, hāʻawi ʻo Songshan Boron ʻoihana i nā kumulāʻau silicon carbide no ka mākeke, a ua loaʻa i nā kūʻai liʻiliʻi liʻiliʻi. ʻO ke kolu o nā mea hana semiconductor i hōʻike ʻia e ka silicon carbide he kuleana nui i ka ʻoihana hou, me ka wikiwiki o ke komo ʻana o nā kaʻa ikehu hou a me nā noi photovoltaic, ua kokoke ke koi no ka silicon carbide substrate e hoʻokomo i kahi inflection point.