2 iniha Silicon Carbide Wafers 6H a i ʻole 4H N-type a Semi-Insulating SiC Substrates

2 iniha Silicon Carbide Wafers 6H a i ʻole 4H N-type a i ʻole Semi-Insulating SiC Substrates Kiʻi ʻia.

ʻO ka wehewehe pōkole:

ʻO Silicon carbide (SiC), i ʻike ʻia ʻo carborundum, he semiconductor i loaʻa ke silikoni a me ke kalapona me ke ʻano kemika SiC.Hoʻohana ʻia ʻo SiC i nā mea uila semiconductor e hana ana i nā wela kiʻekiʻe a i ʻole nā voltages kiʻekiʻe, a i ʻole nā mea ʻelua. nā LED mana.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Nā Huahana i Manaʻo ʻia

4H SiC wafer N-ʻano

Anawaena: 2 iniha 50.8mm |4 iniha 100mm |6 iniha 150mm

Ke kuhikuhi ʻana: ma waho o ke axis 4.0˚ a i <1120> ± 0.5˚

Kū'ē: <0.1 ohm.cm

'Oka: Si-maka CMP Ra <0.5nm, C-maka maka maka poli Ra <1 nm

4H SiC wafer Semi-insulating

Anawaena: 2 iniha 50.8mm |4 iniha 100mm |6 iniha 150mm

Kūlana: ma ke axis {0001} ± 0.25˚

Kū'ē: >1E5 ohm.cm

'Oka: Si-maka CMP Ra <0.5nm, C-maka maka maka poli Ra <1 nm

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