3 ʻīniha Kiʻekiʻe Maʻemaʻe (Undoped) Silicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)

Wehewehe Pōkole:

ʻO ka wafer 3-'īniha High Purity Semi-Insulating (HPSI) Silicon Carbide (SiC) he substrate premium-grade i hoʻonohonoho pono ʻia no nā noi mana kiʻekiʻe, alapine kiʻekiʻe, a me nā optoelectronic. Hana ʻia me ka mea 4H-SiC undoped, kiʻekiʻe-purity, hōʻike kēia mau wafers i ka conductivity thermal maikaʻi loa, ka bandgap ākea, a me nā waiwai semi-insulating kūikawā, e lilo ana iā lākou i mea pono no ka hoʻomohala ʻana i nā hāmeʻa holomua. Me ka pono o ke kūkulu ʻana a me ka maikaʻi o ka ʻili, lawelawe nā substrates HPSI SiC ma ke ʻano he kumu no nā ʻenehana hanauna hou i nā ʻoihana uila mana, nā kelepona, a me nā ʻoihana aerospace, e kākoʻo ana i ka hana hou ma nā ʻano like ʻole.

E leka uila mai iā mākou

Nā hiʻohiʻona

Nā Waiwai

1. Nā Waiwai Kino a me ke Kūkulu ʻana
●ʻAno Mea: Maʻemaʻe Kiʻekiʻe (Undoped) Silicon Carbide (SiC)
● Ke anawaena: 3 ʻīniha (76.2 mm)
●Mānoanoa: 0.33-0.5 mm, hiki ke hoʻopilikino ʻia e like me nā koi o ka noi.
●ʻAno Crystal: 4H-SiC polytype me kahi lattice hexagonal, i ʻike ʻia no ka neʻe ʻana o ka electron kiʻekiʻe a me ke kūpaʻa wela.
● Kuhikuhi:
oKūlana: [0001] (C-plane), kūpono no nā ʻano hana like ʻole.
oKoho: Ma waho o ke axis (4° a i ʻole 8° tilt) no ka hoʻonui ʻana i ka ulu ʻana o ka epitaxial o nā papa hāmeʻa.
●Palahalaha: ʻOkoʻa ka mānoanoa holoʻokoʻa (TTV) ●ʻAno o ka ʻIli:
oHoʻopili ʻia i ka nui o ka hemahema haʻahaʻa (<10/cm² ka nui o ka micropipe). 2. Nā Waiwai Uila ●Ke kū'ē ʻana: >109^99 Ω·cm, mālama ʻia e ka hoʻopau ʻana i nā dopants i manaʻo ʻia.
● Ikaika Dielectric: Ke ahonui uila kiʻekiʻe me ka liʻiliʻi o nā pohō dielectric, kūpono no nā noi mana kiʻekiʻe.
●Alakaʻi wela: 3.5-4.9 W/cm·K, e hiki ai ke hoʻopuehu pono i ka wela i nā hāmeʻa hana kiʻekiʻe.

3. Nā Waiwai Wela a me nā Waiwai Mekanika
●Wide Bandgap: 3.26 eV, e kākoʻo ana i ka hana ma lalo o ke anakahi uila kiʻekiʻe, ka mahana kiʻekiʻe, a me nā kūlana radiation kiʻekiʻe.
●Paʻakikī: Mohs scale 9, e hōʻoiaʻiʻo ana i ka paʻa ʻana i ka ʻaʻahu mechanical i ka wā e hana ai.
●Ka helu hoʻonui wela: 4.2×10−6/K4.2 \times 10^{-6}/\text{K}4.2×10−6/K, e hōʻoia ana i ke kūpaʻa o ka dimensional ma lalo o nā loli o ka mahana.

Palena	Papa Hana	Papa Noiʻi	Papa Dummy	ʻĀpana
Papa	Papa Hana	Papa Noiʻi	Papa Dummy
Anawaena	76.2 ± 0.5	76.2 ± 0.5	76.2 ± 0.5	mm
Mānoanoa	500 ± 25	500 ± 25	500 ± 25	µm
Hoʻonohonoho Wafer	Ma ke axis: <0001> ± 0.5°	Ma ke axis: <0001> ± 2.0°	Ma ke axis: <0001> ± 2.0°	kekelē
Ka nui o ka Micropipe (MPD)	≤ 1	≤ 5	≤ 10	kenimika−2^-2−2
Ke kū'ē uila	≥ 1E10	≥ 1E5	≥ 1E5	Ω·kenimi
Dopant	Hoʻopau ʻia	Hoʻopau ʻia	Hoʻopau ʻia
Kūlana Pālahalaha Mua	{1-100} ± 5.0°	{1-100} ± 5.0°	{1-100} ± 5.0°	kekelē
Ka Lōʻihi Palahalaha Mua	32.5 ± 3.0	32.5 ± 3.0	32.5 ± 3.0	mm
Ka Lōʻihi Pālahalaha Lua	18.0 ± 2.0	18.0 ± 2.0	18.0 ± 2.0	mm
Kūlana Pālahalaha Lua	90° CW mai ka pālahalaha mua ± 5.0°	90° CW mai ka pālahalaha mua ± 5.0°	90° CW mai ka pālahalaha mua ± 5.0°	kekelē
Hoʻokaʻawale ʻana i ka lihi	3	3	3	mm
LTV/TTV/Kakaka/Warp	3 / 10 / ±30 / 40	3 / 10 / ±30 / 40	5 / 15 / ±40 / 45	µm
ʻO ka ʻōʻili	ʻAoʻao-ʻaoʻao: CMP, ʻAoʻao-C: Hoʻopili ʻia	ʻAoʻao-ʻaoʻao: CMP, ʻAoʻao-C: Hoʻopili ʻia	ʻAoʻao-ʻaoʻao: CMP, ʻAoʻao-C: Hoʻopili ʻia
Nā Māwae (Kukui Ikaika)	ʻAʻohe	ʻAʻohe	ʻAʻohe
Nā Papa Hex (Kukui Ikaika)	ʻAʻohe	ʻAʻohe	ʻĀpana hōʻuluʻulu 10%	%
Nā Wahi Polytype (Kukui Ikaika)	ʻĀpana hōʻuluʻulu 5%	ʻĀpana hōʻuluʻulu 20%	ʻĀpana hōʻuluʻulu 30%	%
Nā ʻōpala (Kukui Ikaika)	≤ 5 mau ʻōpala, ka lōʻihi hōʻuluʻulu ≤ 150	≤ 10 mau ʻōpala, ka lōʻihi hōʻuluʻulu ≤ 200	≤ 10 mau ʻōpala, ka lōʻihi hōʻuluʻulu ≤ 200	mm
ʻOkiʻoki lihi	ʻAʻohe ≥ 0.5 mm ka laulā/hohonu	2 i ʻae ʻia ≤ 1 mm ka laulā/hohonu	5 i ʻae ʻia ≤ 5 mm ka laulā/hohonu	mm
Ka haumia ʻili	ʻAʻohe	ʻAʻohe	ʻAʻohe

Nā noi

1. Nā Uila Mana
ʻO ka bandgap ākea a me ke alakaʻi wela kiʻekiʻe o nā substrates HPSI SiC e kūpono iā lākou no nā mea hana mana e hana ana i nā kūlana koʻikoʻi, e like me:
●Nā Mea Hana Uila Kiʻekiʻe: Me nā MOSFET, IGBT, a me Schottky Barrier Diodes (SBD) no ka hoʻololi mana kūpono.
●Nā ʻōnaehana ikehu hou: E like me nā mea hoʻohuli lā a me nā mea hoʻokele turbine makani.
●Nā Kaʻa Uila (EV): Hoʻohana ʻia i nā inverters, nā mea hoʻoili uila, a me nā ʻōnaehana powertrain e hoʻomaikaʻi i ka pono a hoʻemi i ka nui.

2. Nā noi RF a me Microwave
He mea nui ka resistivity kiʻekiʻe a me nā pohō dielectric haʻahaʻa o nā wafers HPSI no nā ʻōnaehana alapine lekiō (RF) a me nā microwave, me:
● ʻOihana Hoʻokaʻaʻike: Nā kikowaena no nā pūnaewele 5G a me nā kamaʻilio ukali.
● Aerospace a me ka Pale Kaua: Nā ʻōnaehana radar, nā antenna phased-array, a me nā ʻāpana avionics.

3. ʻOptoelectronics
ʻO ka transparency a me ka bandgap ākea o 4H-SiC e hiki ai ke hoʻohana ʻia i nā polokalamu optoelectronic, e like me:
●Nā mea ʻike kiʻi UV: No ka nānā ʻana i ke kaiapuni a me nā hōʻailona lapaʻau.
●Nā LED Mana Kiʻekiʻe: Ke kākoʻo nei i nā ʻōnaehana kukui paʻa.
●Nā Diode Laser: No nā noi ʻoihana a me nā noi lapaʻau.

4. Noiʻi a me ka Hoʻomohala ʻana
Hoʻohana nui ʻia nā substrates HPSI SiC i nā keʻena R&D hoʻonaʻauao a me nā ʻoihana no ka ʻimi ʻana i nā waiwai mea holomua a me ka hana ʻana o nā hāmeʻa, me:
●Ka ulu ʻana o ka papa Epitaxial: Nā haʻawina e pili ana i ka hōʻemi ʻana i nā hemahema a me ka hoʻonui ʻana i ka papa.
●Nā Haʻawina Neʻe ʻana o ka Mea Lawe: Noiʻi ʻana i ka lawe ʻana o ka uila a me ka lua i nā mea maʻemaʻe kiʻekiʻe.
● Hoʻolālā mua: Hoʻomohala mua ʻana o nā hāmeʻa a me nā kaapuni hou.

Nā Pōmaikaʻi

Kūlana Kiʻekiʻe Loa:
Hāʻawi ka maʻemaʻe kiʻekiʻe a me ka haʻahaʻa kīnā i kahi kahua hilinaʻi no nā noi holomua.

Paʻa Wela:
ʻO nā waiwai hoʻopuehu wela maikaʻi loa e ʻae i nā hāmeʻa e hana pono ma lalo o nā kūlana mana kiʻekiʻe a me nā mahana.

Hoʻohālikelike ākea:
ʻO nā kuhikuhi i loaʻa a me nā koho mānoanoa maʻamau e hōʻoiaʻiʻo i ka hoʻololi ʻana no nā koi hāmeʻa like ʻole.

Paʻa:
ʻO ka paʻakikī kūikawā a me ke kūpaʻa o ke kūkulu ʻana e hōʻemi i ka ʻaʻahu a me ke ʻano ʻino i ka wā o ka hana ʻana a me ka hana.

Ka maʻalahi:
Kūpono no nā ʻano ʻoihana like ʻole, mai ka ikehu hou a hiki i ka aerospace a me nā kamaʻilio.

Hopena

ʻO ka wafer 3-'īniha High Purity Semi-Insulating Silicon Carbide e hōʻike ana i ka piko o ka ʻenehana substrate no nā mea hana mana kiʻekiʻe, alapine kiʻekiʻe, a me nā optoelectronic. ʻO kona hui pū ʻana o nā waiwai thermal, uila, a me nā mechanical maikaʻi loa e hōʻoiaʻiʻo ana i ka hana hilinaʻi i nā wahi paʻakikī. Mai nā ʻōnaehana uila mana a me nā ʻōnaehana RF a i nā optoelectronics a me ka R&D holomua, hāʻawi kēia mau substrates HPSI i ke kahua no nā hana hou o ka lā ʻapōpō.
No ka ʻike hou aku a i ʻole e kau i kahi kauoha, e ʻoluʻolu e kelepona mai iā mākou. Loaʻa kā mākou hui loea e hāʻawi i ke alakaʻi a me nā koho hoʻopilikino i kūpono i kāu mau pono.