3 'īniha Maʻemaʻe Kiʻekiʻe (Undoped)Silicon Carbide Wafers Semi-Insulating Sic Substrates (HPSl)

ʻO ka wehewehe pōkole:

ʻO ka 3-inihi High Purity Semi-Insulating (HPSI) Silicon Carbide (SiC) wafer he mea hoʻonui-grade substrate i hoʻopaʻa ʻia no ka mana kiʻekiʻe, kiʻekiʻe-frequency, a me nā noi optoelectronic. Hana ʻia me ka mea undoped, maʻemaʻe kiʻekiʻe 4H-SiC, hōʻike kēia mau wafers i ka conductivity thermal maikaʻi loa, bandgap ākea, a me nā waiwai semi-insulating kūʻokoʻa, e hoʻolilo iā lākou i mea nui no ka hoʻomohala ʻana i nā polokalamu holomua. Me ka ʻoi aku ka maikaʻi o ka hoʻokumu ʻana a me ka maikaʻi o ka ʻili, lawelawe ʻo HPSI SiC substrates ma ke ʻano he kumu no nā ʻenehana hou aʻe i ka uila uila, kelepona, a me nā ʻoihana aerospace, e kākoʻo ana i nā mea hou ma nā ʻano āpau.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Waiwai

1. Na Waiwai Kino a me Na Hana
● ʻAno Mea: Maʻemaʻe Kiʻekiʻe (Undoped) Silicon Carbide (SiC)
●Ka anawaena: 3 iniha (76.2 mm)
● Mānoanoa: 0.33-0.5 mm, customizable ma muli o ka noi noi.
●Crystal Structure: 4H-SiC polytype me kahi lattice hexagonal, i ʻike ʻia no ka mobility electron kiʻekiʻe a me ka paʻa wela.
● Kūlana:
oStandard: [0001] (C-plane), kūpono no ka nui o nā noi.
ʻO ke koho: Off-axis (4° a i ʻole 8° tilt) no ka hoʻonui ʻia ʻana o ka epitaxial o nā papa hana.
●Pāpala: Ka nui o ka mānoanoa o nā ʻano like ʻole (TTV) ●Ke ʻano o ka ʻili:
oPolished a hiki i ka haʻahaʻa-defect density (<10/cm² micropipe density). 2. Nā Pono uila ●Resistivity: >109^99 Ω·cm, mālama ʻia e ka hoʻopau ʻana i nā dopants i manaʻo ʻia.
●Dielectric ikaika: ʻO ka hoʻomanawanui kiʻekiʻe me ka liʻiliʻi o nā poho dielectric, kūpono no nā noi mana kiʻekiʻe.
●Thermal Conductivity: 3.5-4.9 W/cm·K, hiki i ka hoʻokuʻu wela maikaʻi i nā mea hana kiʻekiʻe.

3. Na Waiwai a me Mechanical
●Wide Bandgap: 3.26 eV, kākoʻo i ka hana ma lalo o ka volta kiʻekiʻe, ka wela kiʻekiʻe, a me nā kūlana radiation kiʻekiʻe.
● Paʻakiki: ʻO ka pālākiō Mohs 9, e hōʻoia ana i ka paʻa o ka mīkini i ka wā e hana ai.
●Pono Hoʻonui wela: 4.2×10−6/K4.2 \manawa 10^{-6}/\text{K}4.2×10−6/K, e hōʻoia ana i ka paʻa o ke ana ma lalo o nā ʻano wela.

ʻĀpana	Papa Hana Hana	Papa noiʻi	Papa Dummy	Unite
Papa	Papa Hana Hana	Papa noiʻi	Papa Dummy
Anawaena	76.2 ± 0.5	76.2 ± 0.5	76.2 ± 0.5	mm
mānoanoa	500 ± 25	500 ± 25	500 ± 25	µm
Kūlana Wafer	Ma ka axis: <0001> ± 0.5°	Ma ka axis: <0001> ± 2.0°	Ma ka axis: <0001> ± 2.0°	degere
ʻOiʻa Micropipe (MPD)	≤ 1	≤ 5	≤ 10	knm−2^-2−2
Kū'ē Uila	≥ 1E10	≥ 1E5	≥ 1E5	Ω·cm
Dopant	Wehe ʻia	Wehe ʻia	Wehe ʻia
Kūlana Pāha mua	{1-100} ± 5.0°	{1-100} ± 5.0°	{1-100} ± 5.0°	degere
Ka lōʻihi pālahalaha	32.5 ± 3.0	32.5 ± 3.0	32.5 ± 3.0	mm
Ka lōʻihi pālahalaha lua	18.0 ± 2.0	18.0 ± 2.0	18.0 ± 2.0	mm
Kūlana Pāpā lua	90° CW mai ka papahele mua ± 5.0°	90° CW mai ka papahele mua ± 5.0°	90° CW mai ka papahele mua ± 5.0°	degere
Hoʻokuʻu Edge	3	3	3	mm
LTV/TTV/Bow/Warp	3 / 10 / ±30 / 40	3 / 10 / ±30 / 40	5 / 15 / ±40 / 45	µm
ʻAole ʻili	Si-maka: CMP, C-maka: Polina	Si-maka: CMP, C-maka: Polina	Si-maka: CMP, C-maka: Polina
Nā māwae (māmā Kiʻekiʻe)	ʻAʻohe	ʻAʻohe	ʻAʻohe
Nā Papa Hex (Kukui Kiʻekiʻe)	ʻAʻohe	ʻAʻohe	ʻĀpana hui 10%	%
Nā ʻāpana Polytype (Kukui Kiʻekiʻe)	ʻĀpana hui 5%	ʻĀpana hui 20%	ʻĀpana hui 30%	%
Nā ʻōpala (Kukui Kiʻekiʻe)	≤ 5 ʻōpala, hui pū ʻia ≤ 150	≤ 10 ʻōpala, hui pū ʻia ≤ 200	≤ 10 ʻōpala, hui pū ʻia ≤ 200	mm
ʻO ka ʻoki ʻoki	ʻAʻohe ≥ 0.5 mm laula/hohonu	2 ʻae ʻia ≤ 1 mm laula/hohonu	5 ʻae ʻia ≤ 5 mm laula/hohonu	mm
Hoʻohaumia ʻili	ʻAʻohe	ʻAʻohe	ʻAʻohe

Nā noi

1. Mea uila mana
ʻO ka bandgap ākea a me ka conductivity thermal kiʻekiʻe o nā substrates HPSI SiC e kūpono iā lākou no nā mana mana e hana ana i nā kūlana koʻikoʻi, e like me:
●Nā Mea Kiʻekiʻe-Voltage: Me MOSFET, IGBT, a me Schottky Barrier Diodes (SBDs) no ka hoʻololi mana kūpono.
● Pūnaehana ikehu hou: E like me nā mea hoʻohuli i ka lā a me nā mea hoʻokele makani.
●Nā Kaʻa Uila (EV): Hoʻohana ʻia i nā mea hoʻohuli, nā loina, a me nā ʻōnaehana powertrain e hoʻomaikaʻi i ka pono a hoʻemi i ka nui.

2. Nā polokalamu RF a me Microwave
He mea nui ka pale pale kiʻekiʻe a me nā poho dielectric haʻahaʻa o nā wafers HPSI no ka radio-frequency (RF) a me nā ʻōnaehana microwave, me:
●Kōnaehana Kelepona: Nā kahua kahua no nā pūnaewele 5G a me nā leka uila.
●Aerospace a me Defence: Nā ʻōnaehana radar, nā antenna i hoʻonohonoho ʻia, a me nā ʻāpana avionics.

3. Optoelectronics
Hiki i ka ʻike a me ka bandgap ākea o 4H-SiC ke hoʻohana i nā mea optoelectronic, e like me:
●UV Photodetectors: No ka nānā ʻana i ke kaiapuni a me nā diagnostics olakino.
● Nā LED Mana Kiʻekiʻe: Kākoʻo i nā ʻōnaehana kukui paʻa.
●Laser Diodes: No nā ʻoihana ʻoihana a me nā hana lapaʻau.

4. Noiʻi a hoʻomohala
Hoʻohana nui ʻia nā substrates HPSI SiC i nā labs R&D hoʻonaʻauao a me nā ʻenehana no ka ʻimi ʻana i nā waiwai waiwai a me ka hana ʻana o nā mea hana, me:
●Epitaxial Layer Growth: Nā haʻawina e pili ana i ka hōʻemi hemahema a me ka hoʻonui ʻana i ka papa.
●Ka Haʻawina Mobility Carrier: Ke noiʻi ʻana i ka lawe ʻana i ka electron a me ka lua i nā mea maʻemaʻe kiʻekiʻe.
●Prototyping: Hoʻomaka mua o nā mea hana hou a me nā kaapuni.

Pono

ʻOi aku ka maikaʻi:
Hāʻawi ka maʻemaʻe kiʻekiʻe a me ka haʻahaʻa haʻahaʻa haʻahaʻa i kahi kahua hilinaʻi no nā noi holomua.

Paʻa wela:
ʻO nā waiwai hoʻoheheʻe wela maikaʻi e hiki ai i nā mea hana ke hana maikaʻi ma lalo o ka mana kiʻekiʻe a me nā kūlana wela.

Kūlike ākea:
Loaʻa nā orientation a me nā koho mānoanoa maʻamau e hōʻoia i ka hoʻololi ʻana no nā koi ʻokoʻa.

Ka lōʻihi:
ʻO ka paʻakikī a me ka paʻa o ke kūkulu ʻana e hōʻemi i ka ʻaʻahu a me ka deformation i ka wā o ka hana a me ka hana.

ʻAno kūpono:
He kūpono no ka nui o nā ʻoihana, mai ka ikehu hou i ka aerospace a me ke kelepona.

Ka hopena

ʻO ka 3-inch High Purity Semi-Insulating Silicon Carbide wafer e hōʻike ana i ka piko o ka ʻenehana substrate no nā mea mana kiʻekiʻe, kiʻekiʻe-frequency, a me optoelectronic. ʻO kāna hui pū ʻana o nā mea wela maikaʻi, uila, a me nā mea mechanical e hōʻoia i ka hana pono i nā kaiapuni paʻakikī. Mai ka uila uila a me nā ʻōnaehana RF a hiki i ka optoelectronics a me ka R&D kiʻekiʻe, hāʻawi kēia mau substrates HPSI i ke kumu no nā hana hou o ka lā ʻapōpō.
No ka ʻike hou aku a i ʻole e kau i kahi kauoha, e ʻoluʻolu e kelepona mai iā mākou. Loaʻa kā mākou hui loea e hāʻawi i ke alakaʻi a me nā koho hoʻoponopono i kūpono i kāu mau pono.