ʻO 4 ʻīniha SiC Wafers 6H Semi-Insulating SiC Substrates prime, research, a me dummy grade
Nā kikoʻī huahana
| Papa | Papa Hana MPD ʻOle (Pae Z) | Papa Hana Maʻamau (Pae P) | Papa Hoʻopunipuni (Papa D) | ||||||||
| Anawaena | 99.5 mm~100.0 mm | ||||||||||
| 4H-SI | 500 μm±20 μm | 500 μm±25 μm | |||||||||
| Hoʻonohonoho Wafer |
ʻO ke axis ma waho: 4.0° i ka ʻaoʻao <1120> ±0.5° no 4H-N, Ma ke axis: <0001>±0.5° no 4H-SI | ||||||||||
| 4H-SI | ≤1 kenimika-2 | ≤5 kenimika-2 | ≤15 kenimika-2 | ||||||||
| 4H-SI | ≥1E9 Ω·cm | ≥1E5 Ω·cm | |||||||||
| Kūlana Pālahalaha Mua | {10-10} ±5.0° | ||||||||||
| Ka Lōʻihi Palahalaha Mua | 32.5 mm±2.0 mm | ||||||||||
| Ka Lōʻihi Pālahalaha Lua | 18.0 mm±2.0 mm | ||||||||||
| Kūlana Pālahalaha Lua | Ke alo Silicon i luna: 90° CW. mai Prime flat ±5.0° | ||||||||||
| Hoʻokaʻawale ʻana i ka lihi | 3 mm | ||||||||||
| LTV/TTV/Kakaka/Warp | ≤3 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm | |||||||||
| ʻOʻoleʻa | Maka C | Pōlani | Ra≤1 nm | ||||||||
| Maka Si | CMP | Ra≤0.2 nm | Ra≤0.5 nm | ||||||||
| Nā Māwae Lihi e ka Mālamalama Ikaika Kiʻekiʻe | ʻAʻohe | Ka lōʻihi huina ≤ 10 mm, hoʻokahi lōʻihi≤2 mm | |||||||||
| Nā Papa Hex Ma o ke Kukui Ikaika Kiʻekiʻe | ʻĀpana hōʻuluʻulu ≤0.05% | ʻĀpana hōʻuluʻulu ≤0.1% | |||||||||
| Nā wahi Polytype e ka mālamalama ikaika kiʻekiʻe | ʻAʻohe | ʻĀpana hōʻuluʻulu ≤3% | |||||||||
| Nā Hoʻokomo Kalapona ʻIke | ʻĀpana hōʻuluʻulu ≤0.05% | ʻĀpana hōʻuluʻulu ≤3% | |||||||||
| Nā ʻōpala ʻili Silicon e ka mālamalama ikaika kiʻekiʻe | ʻAʻohe | Ka lōʻihi huina ≤1*ke anawaena wafer | |||||||||
| Kiʻekiʻe nā ʻāpana lihi ma o ka mālamalama ikaika | ʻAʻohe mea i ʻae ʻia ≥0.2 mm ka laulā a me ka hohonu | 5 i ʻae ʻia, ≤1 mm kēlā me kēia | |||||||||
| Ka haumia ʻana o ka ʻili Silicon ma o ka ikaika kiʻekiʻe | ʻAʻohe | ||||||||||
| Ka hoʻopili ʻana | Kaseta Wafer Multi-wafer a i ʻole ka ipu Wafer hoʻokahi | ||||||||||
Kiʻikuhi kikoʻī
Nā Huahana Pili
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