4 iniha SiC Wafers 6H Semi-Insulating SiC Substrates prime, noiʻi, a me ka papa dummy
Huahana Huahana
Papa | ʻAʻohe papa hana MPD (Z Grade) | Papa Hana Maʻamau (P Grade) | Papa Dummy (Ka Papa D) | ||||||||
Anawaena | 99.5 mm~100.0 mm | ||||||||||
4H-SI | 500 μm±20 μm | 500 μm±25 μm | |||||||||
Kūlana Wafer |
Ke koʻi waho: 4.0° i< 1120 > ± 0.5° no 4H-N, Ma ke axis: <0001>±0.5° no 4H-SI | ||||||||||
4H-SI | ≤1cm-2 | ≤5 knm-2 | ≤15 knm-2 | ||||||||
4H-SI | ≥1E9 Ω·cm | ≥1E5 Ω·cm | |||||||||
Kūlana Pāha mua | {10-10} ±5.0° | ||||||||||
Ka lōʻihi pālahalaha | 32.5 mm±2.0 mm | ||||||||||
Ka lōʻihi pālahalaha lua | 18.0 mm±2.0 mm | ||||||||||
Kūlana Pāpā lua | ʻO ke alo silika i luna: 90° CW. mai Prime flat ±5.0° | ||||||||||
Hoʻokuʻu Edge | 3 mm | ||||||||||
LTV/TTV/Bow/Warp | ≤3 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm | |||||||||
ʻoʻoleʻa | C maka | Pōlani | Ra≤1 nm | ||||||||
ʻO ka maka | CMP | Ra≤0.2 nm | Ra≤0.5 nm | ||||||||
Nā Māwae ʻO Edge Ma ka Māmā ʻO ke Kiʻekiʻe | ʻAʻohe | ʻO ka lōʻihi huila ≤ 10 mm, hoʻokahi lōʻihi≤2 mm | |||||||||
Nā Papa Hex Ma ka Māmā Kiʻekiʻe | ʻĀpana hui ≤0.05% | ʻĀpana hui ≤0.1% | |||||||||
Nā ʻāpana Polytype Ma ka Māmā Kiʻekiʻe | ʻAʻohe | ʻĀpana huila≤3% | |||||||||
Hoʻokomo ʻia ʻo Carbon Visual | ʻĀpana hui ≤0.05% | ʻĀpana hui ≤3% | |||||||||
ʻO ka ʻili o ka ʻili silikoni e ka māmā ikaika loa | ʻAʻohe | Huina lōʻihi≤1*wafer anawaena | |||||||||
Kiʻekiʻe ʻo Edge Chips e ka māmā ikaika | ʻAʻole ʻae ʻia ≥0.2 mm laula a me ka hohonu | 5 ʻae ʻia, ≤1 mm kēlā me kēia | |||||||||
ʻO ka hoʻohaumia ʻana o ka ʻili Silicon e ka ikaika kiʻekiʻe | ʻAʻohe | ||||||||||
Hoʻopili ʻia | ʻO ka pahu wafer nui a i ʻole ka pahu wafer hoʻokahi |
Kiʻi kikoʻī
E kākau i kāu leka ma aneʻi a hoʻouna mai iā mākou