Papa noiʻi Dummy Production 4H-semi HPSI 2inch SiC substrate wafer

ʻO ke ʻano o ka substrate silicon carbide i māhele nui ʻia i ke ʻano conductive a me ka semi-insulating, ʻo ka substrate silicon carbide conductive i ka substrate n-type e hoʻohana nui ʻia no ka epitaxial GaN-based LED a me nā mea optoelectronic ʻē aʻe, nā mea uila mana SiC-based, a me nā mea ʻē aʻe, a ʻo ka semi-insulating SiC silicon carbide substrate e hoʻohana nui ʻia no ka hana epitaxial o nā mea hana alapine lekiō kiʻekiʻe GaN. Eia kekahi, ʻokoʻa ka semi-insulation HPSI kiʻekiʻe a me ka semi-insulation SI, ʻo ka hoʻohuihui lawe semi-insulation kiʻekiʻe o ka maʻemaʻe he 3.5 * 1013 ~ 8 * 1015/cm3, me ka neʻe ʻana o ka electron kiʻekiʻe; ʻo ka semi-insulation he mea kū'ē kiʻekiʻe, kiʻekiʻe loa ka resistivity, hoʻohana pinepine ʻia no nā substrates microwave, non-conductive.

ʻO ka pepa substrate Silicon Carbide semi-insulating SiC wafer

ʻO ke ʻano o ke aniani SiC e hoʻoholo ai i kona kino, e pili ana iā Si a me GaAs, aia iā SiC no nā waiwai kino; ʻo ka laulā o ke kaula i pāpā ʻia he nui, kokoke i 3 mau manawa o Si, e hōʻoia i ka hana ʻana o ka mea hana i nā mahana kiʻekiʻe ma lalo o ka hilinaʻi lōʻihi; kiʻekiʻe ka ikaika o ke kahua haki, he 1O mau manawa o Si, e hōʻoia i ka hiki ke hoʻonui i ka mana o ka mana o ka mea hana, e hoʻomaikaʻi i ka waiwai o ka mana o ka mea hana; nui ka helu electron saturation, he 2 mau manawa o Si, e hoʻonui i ka alapine (frequency) a me ka mana o ka mea hana; kiʻekiʻe ka conductivity thermal, ʻoi aku ka nui ma mua o Si, kiʻekiʻe ka conductivity thermal ... ʻoi aku ka nui ma mua o Si, kiʻekiʻe ka conductivity thermal, kiʻekiʻe ka conductivity thermal. ʻO ke conductivity thermal kiʻekiʻe, ʻoi aku ma mua o 3 mau manawa o Si, e hoʻonui ana i ka hiki ke hoʻoheheʻe wela o ka mea hana a hoʻokō i ka miniaturization o ka mea hana.