4H-semi HPSI 2 inihi SiC substrate wafer Production Dummy Research māka

4H-semi HPSI 2inch SiC substrate wafer Production Dummy Noiʻi papa Kiʻi Hōʻikeʻike

ʻO ka wehewehe pōkole:

ʻO 2inch silicon carbide one crystal substrate wafer kahi mea hana kiʻekiʻe me nā waiwai kino a me nā mea kemika. Hana ʻia ʻo ia me ke kiʻekiʻe-maʻemaʻe silicon carbide mea aniani hoʻokahi me ka maikaʻi thermal conductivity, mechanical stability a me ke kūpaʻa wela kiʻekiʻe. Mahalo i kāna kaʻina hana hoʻomākaukau kiʻekiʻe a me nā mea kiʻekiʻe kiʻekiʻe, ʻo kēia chip kekahi o nā mea i makemake ʻia no ka hoʻomākaukau ʻana i nā mea uila hana kiʻekiʻe ma nā ʻano he nui.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Semi-insulating silikon carbide substrate SiC wafers

Hoʻokaʻawale nui ʻia ka substrate silicon carbide i loko o ke ʻano conductive a me semi-insulating, conductive silicon carbide substrate i n-type substrate i hoʻohana nui ʻia no ka epitaxial GaN-based LED a me nā mea ʻē aʻe optoelectronic, SiC-based power electronic device, etc., a me semi- Hoʻohana nui ʻia ka insulating SiC silicon carbide substrate no ka hana epitaxial o GaN kiʻekiʻe kiʻekiʻe kiʻekiʻe kiʻekiʻe lekiō uila alapine. Eia kekahi kiʻekiʻe-maʻemaʻe semi-insulation HPSI a me SI semi-insulation mea okoa, kiʻekiʻe-maʻemaʻe kiʻekiʻe semi-insulation kaʻa kaʻa o 3.5 * 1013 ~ 8 * 1015/cm3 laulā, me ka kiʻekiʻe electron mobility; ʻO ka semi-insulation kahi mea kūʻē kiʻekiʻe, kiʻekiʻe loa ka resistivity, hoʻohana maʻamau no nā substrates mīkini microwave, non-conductive.

Semi-insulating Silicon Carbide substrate sheet SiC wafer

Hoʻoholo ka hoʻolālā aniani SiC i kona kino, pili iā Si a me GaAs, loaʻa iā SiC no nā waiwai kino; ʻO ka laulā o ka pahu kapu he nui, kokoke i 3 mau manawa o ka Si, e hōʻoia i ka hana o ka mea hana i nā mahana kiʻekiʻe ma lalo o ka hilinaʻi lōʻihi; He kiʻekiʻe ka ikaika o ke kahua breakdown, he 1O mau manawa o Si, e hōʻoia i ka mana o ka uila uila, e hoʻomaikaʻi i ka waiwai o ka uila; He nui ka helu electron saturation, he 2 manawa ia o ka Si, e hoʻonui i ke alapine o ka mea hana a me ka nui o ka mana; ʻOi aku ka nui o ka conductivity thermal, ʻoi aku ma mua o Si, kiʻekiʻe ka conductivity thermal, kiʻekiʻe ka conductivity thermal, kiʻekiʻe ka conductivity thermal, kiʻekiʻe ka conductivity thermal, ʻoi aku ka nui ma mua o ka Si, kiʻekiʻe ka conductivity thermal, kiʻekiʻe ka conductivity thermal. ʻO ka conductivity thermal kiʻekiʻe, ʻoi aku ma mua o 3 mau manawa o Si, e hoʻonui ana i ka hiki ke hoʻoheheʻe wela o ka hāmeʻa a ʻike i ka miniaturization o ka mea.