6 ʻīniha Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
Nā Waiwai
1. Nā Waiwai Kino a me ke Kūkulu ʻana
●ʻAno Mea: Silicon Carbide (SiC)
●Polytype: 4H-SiC, ʻano kristal hexagonal
● Ke anawaena: 6 ʻīniha (150 mm)
●Mānoanoa: Hiki ke hoʻonohonoho ʻia (5-15 mm maʻamau no ka papa dummy)
●ʻAno o ke aniani:
oKūlana mua: [0001] (C-plane)
Nā koho lua: Ma waho o ke axis 4° no ka ulu ʻana o ka epitaxial i hoʻonui ʻia
●ʻO ke kuhikuhi pālahalaha mua: (10-10) ± 5°
●ʻO ke kuhikuhi pālahalaha lua: 90° ma ke ʻaoʻao hema mai ka pālahalaha mua ± 5°
2. Nā Waiwai Uila
●Ke kū'ē'ē:
oSemi-insulating (>106^66 Ω·cm), kūpono no ka hoʻēmi ʻana i ka capacitance parasitic.
●ʻAno Doping:
o Hoʻohui ʻia me ka manaʻo ʻole, e hopena ana i ke kū'ē uila kiʻekiʻe a me ke kūpaʻa ma lalo o nā ʻano hana like ʻole.
3. Nā Waiwai Wela
●Alakaʻi wela: 3.5-4.9 W/cm·K, e hiki ai ke hoʻopuehu pono i ka wela i nā ʻōnaehana mana kiʻekiʻe.
●Ka helu hoʻonui wela: 4.2×10−64.2 \times 10^{-6}4.2×10−6/K, e hōʻoiaʻiʻo ana i ke kūpaʻa o ka dimensional i ka wā o ka hana ʻana i ka mahana kiʻekiʻe.
4. Nā Waiwai Optical
●Bandgap: ʻO ka bandgap ākea o 3.26 eV, e ʻae ana i ka hana ma lalo o nā voltages kiʻekiʻe a me nā mahana.
●Māliko: Māliko kiʻekiʻe i ka UV a me nā nalu ʻike ʻia, pono no ka hoʻāʻo optoelectronic.
5. Nā Waiwai Mekanika
●Paʻakikī: ʻO ka unahi Mohs 9, ʻo ka lua wale nō ma hope o ke daimana, e hōʻoiaʻiʻo ana i ke kūpaʻa i ka wā e hana ʻia ai.
●Ka nui o ke kīnā:
Kāohi ʻia no nā hemahema macro liʻiliʻi, e hōʻoiaʻiʻo ana i ka lawa ʻana o ka maikaʻi no nā noi dummy-grade.
●Palahalaha: ʻAno like me nā ʻokoʻa
| Palena | Nā kikoʻī | ʻĀpana |
| Papa | Papa Dummy | |
| Anawaena | 150.0 ± 0.5 | mm |
| Hoʻonohonoho Wafer | Ma ke axis: <0001> ± 0.5° | kekelē |
| Ke kū'ē uila | > 1E5 | Ω·kenimi |
| Kūlana Pālahalaha Mua | {10-10} ± 5.0° | kekelē |
| Ka Lōʻihi Palahalaha Mua | ʻOki | |
| Nā Māwae (Nānā Mālamalama Kiʻekiʻe) | < 3 mm ma ka radial | mm |
| Nā Papa Hex (Nānā Mālamalama Kiʻekiʻe) | ʻĀpana hōʻuluʻulu ≤ 5% | % |
| Nā Wahi Polytype (Nānā Mālamalama Kiʻekiʻe) | ʻĀpana hōʻuluʻulu ≤ 10% | % |
| Ka nui o ka micropipe | < 50 | kenimika−2^-2−2 |
| ʻOkiʻoki lihi | 3 i ʻae ʻia, kēlā me kēia ≤ 3 mm | mm |
| Hoʻomaopopo | ʻO ka mānoanoa o ka wafer ʻokiʻoki <1 mm, > 70% (koe naʻe ʻelua mau wēlau) e hoʻokō i nā koi i luna |
Nā noi
1. Hoʻolālā mua a me ka noiʻi
ʻO ka ingot 6-'īniha 4H-SiC dummy-grade kahi mea kūpono no ke prototyping a me ka noiʻi, e ʻae ana i nā mea hana a me nā keʻena hoʻokolohua e:
●Nā palena hana hoʻāʻo ma ka Chemical Vapor Deposition (CVD) a i ʻole Physical Vapor Deposition (PVD).
●E hoʻomohala a hoʻomaikaʻi i nā ʻano hana kālai ʻana, poli ʻana, a me ka ʻoki ʻana i ka wafer.
●E ʻimi i nā hoʻolālā hāmeʻa hou ma mua o ka hoʻololi ʻana i nā mea hana.
2. Ka hoʻoponopono ʻana a me ka hoʻāʻo ʻana i ka hāmeʻa
ʻO nā waiwai semi-insulating e hoʻolilo i kēia ingot i mea waiwai nui no:
● Ke loiloi a me ka hoʻoponopono ʻana i nā waiwai uila o nā mea mana kiʻekiʻe a me nā mea kani alapine kiʻekiʻe.
● Ke hoʻohālike nei i nā kūlana hana no nā MOSFET, IGBT, a i ʻole nā diode i nā wahi hoʻāʻo.
●Lawelawe ma ke ʻano he pani kūpono no nā substrates maʻemaʻe kiʻekiʻe i ka wā hoʻomohala mua.
3. Nā Uila Mana
ʻO ke kiʻekiʻe o ka conductivity thermal a me nā ʻano bandgap ākea o 4H-SiC e hiki ai ke hana pono i nā mea uila mana, me:
●Nā lako mana uila kiʻekiʻe.
●Nā mea hoʻohuli kaʻa uila (EV).
●Nā ʻōnaehana ikehu hou, e like me nā mea hoʻohuli ikehu lā a me nā turbine makani.
4. Nā noi alapine lekiō (RF)
ʻO ka pohō dielectric haʻahaʻa o 4H-SiC a me ka neʻe ʻana o ka electron kiʻekiʻe e kūpono ia no:
●Nā mea hoʻonui RF a me nā transistors i loko o nā ʻōnaehana kamaʻilio.
●Nā ʻōnaehana radar alapine kiʻekiʻe no nā noi aerospace a me ka pale kaua.
●Nā ʻāpana pūnaewele uea ʻole no nā ʻenehana 5G e kū mai ana.
5. Nā Mea Hana Kū'ē i ka Pāhawewe
Ma muli o kona kūpaʻa kūlohelohe i nā hemahema i hoʻokomo ʻia e ka radiation, kūpono ka semi-insulating 4H-SiC no:
●Nā lako hana ʻimi lewa, me nā mea uila ukali a me nā ʻōnaehana mana.
●Nā mea uila i hoʻopaʻakikī ʻia e ka radiation no ka nānā ʻana a me ka kaohi ʻana i ka nukelea.
● Nā noi pale e pono ai ka paʻa ma nā wahi koʻikoʻi.
6. ʻOptoelectronics
ʻO ka transparency optical a me ka bandgap ākea o 4H-SiC e hiki ai ke hoʻohana ʻia i loko o:
●Nā mea ʻike kiʻi UV a me nā LED mana kiʻekiʻe.
● Ke hoʻāʻo ʻana i nā uhi ʻike maka a me nā hana ʻili.
● Ke hoʻohālikelike nei i nā ʻāpana optical no nā mea ʻike holomua.
Nā Pōmaikaʻi o ka Mea Dummy-Grade
Ka Pono o ke Kumukūʻai:
ʻOi aku ka maʻalahi o ke kumukūʻai o ka dummy grade ma mua o nā mea noiʻi a i ʻole nā mea hana, e kūpono ana no ka hoʻāʻo maʻamau a me ka hoʻomaʻemaʻe ʻana i ke kaʻina hana.
Hoʻopilikino ʻia:
ʻO nā ana hoʻonohonoho a me nā kuhikuhi kristal e hōʻoiaʻiʻo i ka launa pū ʻana me nā ʻano noi like ʻole.
Ka hiki ke hoʻonui ʻia:
Hoʻohālikelike ke anawaena 6-ʻīniha me nā kūlana ʻoihana, e ʻae ana i ka hoʻonui maʻalahi ʻana i nā kaʻina hana pae hana.
Paʻa:
ʻO ka ikaika mechanical kiʻekiʻe a me ke kūpaʻa wela e hoʻopaʻa a hilinaʻi hoʻi i ka ingot ma lalo o nā kūlana hoʻokolohua like ʻole.
Ka maʻalahi:
Kūpono no nā ʻoihana he nui, mai nā ʻōnaehana ikehu a i nā kamaʻilio a me nā optoelectronics.
Hopena
ʻO ka ingot semi-insulating 6-'īniha Silicon Carbide (4H-SiC), dummy grade, hāʻawi i kahi kahua hilinaʻi a maʻalahi hoʻi no ka noiʻi, prototyping, a me ka hoʻāʻo ʻana i nā ʻāpana ʻenehana ʻoi loa. ʻO kona mau waiwai wela, uila, a me ka mechanical kūikawā, i hui pū ʻia me ke kumukūʻai kūpono a me ka hiki ke hoʻopilikino ʻia, e lilo ia i mea pono no nā kula a me nā ʻoihana. Mai nā uila mana a hiki i nā ʻōnaehana RF a me nā mea hana i hoʻopaʻa ʻia i ka radiation, kākoʻo kēia ingot i ka hana hou i kēlā me kēia pae o ka hoʻomohala ʻana.
No nā kikoʻī kikoʻī hou aku a i ʻole e noi i kahi ʻōlelo kūʻai, e ʻoluʻolu e kelepona pololei mai iā mākou. Ua mākaukau kā mākou hui loea e kōkua me nā hoʻonā i hana kūikawā ʻia e hoʻokō i kāu mau koi.
Kiʻikuhi kikoʻī
