6 ma Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade

ʻO ka wehewehe pōkole:

Ke hoʻololi nei ʻo Silicon Carbide (SiC) i ka ʻoihana semiconductor, ʻoi aku ka nui o ka mana kiʻekiʻe, kiʻekiʻe-frequency, a me nā noi pale radiation. ʻO ka 6-inch 4H-SiC semi-insulating ingot, hāʻawi ʻia i ka papa dummy, he mea pono no ka prototyping, noiʻi, a me nā kaʻina hana calibration. Me kahi bandgap ākea, conductivity thermal maikaʻi loa, a me ka ikaika mechanical, lawelawe kēia ingot ma ke ʻano he koho kumu kūʻai no ka hoʻāʻo ʻana a me ka hoʻoponopono ʻana i ka hana me ka ʻole o ka hoʻololi ʻana i ke ʻano kumu e pono ai no ka hoʻomohala holomua. Hāʻawi kēia huahana i nā ʻano noi like ʻole, me ka uila uila, nā mea uila radio-frequency (RF), a me nā optoelectronics, e lilo ia i mea waiwai nui no ka ʻoihana a me nā keʻena noiʻi.


Huahana Huahana

Huahana Huahana

Waiwai

1. Na Waiwai Kino a me Na Hana
● ʻAno Mea: Silicon Carbide (SiC)
●Polytype: 4H-SiC, hexagonal crystal structure
●Ka anawaena: 6 iniha (150 mm)
● Mānoanoa: Hiki ke hoʻonohonoho ʻia (5-15 mm maʻamau no ka papa dummy)
●Kūnaehana Crystal:
oPrimary: [0001] (C-plane)
ʻO nā koho lua: Off-axis 4° no ka hoʻonui ʻana i ka epitaxial
●Kumu Pāha mua: (10-10) ± 5°
●Ke Kūlana Paʻa Lua: 90° counterclockwise mai ka papa mua ± 5°

2. Pono Uila
● kū'ē:
oSemi-insulating (> 106^66 Ω·cm), kūpono no ka hoʻemi ʻana i ka capacitance parasitic.
● ʻAno Doping:
ʻO ka doped me ka manaʻo ʻole, ka hopena i ka resistivity uila kiʻekiʻe a me ke kūpaʻa ma lalo o nā kūlana hana.

3. Na waiwai wela
●Thermal Conductivity: 3.5-4.9 W/cm·K, hiki i ka hoʻokuʻu ʻana i ka wela ma nā ʻōnaehana mana kiʻekiʻe.
●Hoʻonui Hoʻonui Thermal: 4.2×10−64.2 \times 10^{-6}4.2×10−6/K, e hōʻoia ana i ka paʻa o ka dimensional i ka wā o ka hana wela wela.

4. Na Pono Optical
●Bandgap: ʻO ka bandgap ākea o 3.26 eV, e ʻae ana i ka hana ma lalo o nā voltage kiʻekiʻe a me nā mahana.
● Transparency: ʻO ke aniani kiʻekiʻe i ka UV a me nā lōʻihi nalu ʻike ʻia, pono no ka hoʻāʻo optoelectronic.

5. Pono Mechanical
● Paʻakikī: ʻO ka pālākiō Mohs 9, ka lua wale nō i ke daimana, e hōʻoia ana i ka paʻa i ka wā e hana ai.
● ʻAʻe ʻino:
ʻO ka mālama ʻia no nā hemahema macro liʻiliʻi, e hōʻoia ana i ka maikaʻi kūpono no nā noi dummy-grade.
●Paʻa: Kaulike me nā ʻokoʻa

ʻĀpana

Nā kikoʻī

Unite

Papa Papa Dummy  
Anawaena 150.0 ± 0.5 mm
Kūlana Wafer Ma ka axis: <0001> ± 0.5° degere
Kū'ē Uila > 1E5 Ω·cm
Kūlana Pāha mua {10-10} ± 5.0° degere
Ka lōʻihi pālahalaha Notch  
Nā māwae (Nā Māmā Māmā Kiʻekiʻe) <3 mm i ka radial mm
Nā Papa Hex (Nā Māmā Kiʻekiʻe Kiʻekiʻe) ʻĀpana hui ≤ 5% %
Nā ʻāpana Polytype (Hōʻike Māmā Kiʻekiʻe) ʻĀpana hui ≤ 10% %
Micropipe Density < 50 knm−2^-2−2
ʻO ka ʻoki ʻoki 3 ʻae ʻia, kēlā me kēia ≤ 3 mm mm
Nānā ʻO ka mānoanoa wafer ʻokiʻoki <1 mm, > 70% (koe ʻole nā ​​ʻaoʻao ʻelua) e hoʻokō i nā koi i luna.  

Nā noi

1. Prototyping and Research
ʻO ka dummy-grade 6-inch 4H-SiC ingot kahi mea kūpono no ka prototyping a me ka noiʻi, e ʻae ana i nā mea hana a me nā laboratories e:
●E ho'āʻo i nā ʻāpana kaʻina hana ma ka Chemical Vapor Deposition (CVD) a i ʻole Physical Vapor Deposition (PVD).
●E hoʻomohala a hoʻomaʻemaʻe i nā ʻenehana hoʻoheheʻe ʻana, hoʻoliʻiliʻi, a me ka wafer slicing.
●E ʻimi i nā hoʻolālā mea hana hou ma mua o ka hoʻololi ʻana i nā mea hana-papa.

2. Hoʻoponopono ʻana a me ka hoʻāʻo ʻana
ʻO nā waiwai semi-insulating he mea waiwai kēia ingot no:
● Ka loiloi ʻana a me ka hoʻohālikelike ʻana i nā waiwai uila o nā mea mana kiʻekiʻe a me nā alapine kiʻekiʻe.
●Hoʻohālikelike i nā kūlana hana no nā MOSFET, IGBT, a i ʻole nā ​​diodes ma nā wahi hoʻāʻo.
● Ke lawelawe nei ma ke ʻano he kumu kūʻai kūpono no nā substrates maʻemaʻe kiʻekiʻe i ka wā o ka hoʻomohala ʻana i ka wā mua.

3. Mea uila mana
ʻO ka conductivity thermal kiʻekiʻe a me nā hiʻohiʻona bandgap ākea o 4H-SiC e hiki ai i ka hana kūpono i ka uila uila, me:
●Kiʻekiʻe-volte lako mana.
● Nā mea hoʻohuli kaʻa uila (EV).
● Pūnaehana ikehu hou, e like me nā mea hoʻohuli lā a me nā makani makani.

4. Nā noi no ka Radio Frequency (RF).
ʻO nā poho dielectric haʻahaʻa o 4H-SiC a me ka neʻe electron kiʻekiʻe e kūpono ia no:
● Nā mea hoʻonui a me nā transistors RF i ka ʻoihana kamaʻilio.
● Nā ʻōnaehana radar kiʻekiʻe no ka aerospace a me nā noi pale.
●Nā ʻāpana pūnaewele ʻole no nā ʻenehana 5G e kū nei.

5. Nā mea hoʻoheheʻe-kuʻe
Ma muli o kona kūpaʻa kūʻokoʻa i nā hemahema i hoʻoiho ʻia i ka radiation, kūpono ka semi-insulating 4H-SiC no:
● ʻO nā lako ʻimi lewa, me nā uila uila a me nā ʻōnaehana mana.
●Nā uila i hoʻopaʻa ʻia e ka radiation no ka nānā ʻana a me ka hoʻokele nuklea.
● Nā noi pale e koi ana i ka ikaika ma nā kaiapuni koʻikoʻi.

6. Optoelectronics
Hiki ke hoʻohana ʻia ka ʻike maka a me ka bandgap ākea o 4H-SiC i ka hoʻohana ʻana i:
●UV photodetectors a kiʻekiʻe-mana LED.
●E ho'āʻo ana i nā uhi ʻili a me nā hoʻomaʻamaʻa ʻili.
●Prototyping ʻāpana optical no nā mea ʻike kiʻekiʻe.

Pono o Dummy-Grade Material

Kūʻai kūpono:
ʻO ka papa dummy kahi koho ʻoi aku ka maʻalahi no ka noiʻi a i ʻole nā ​​​​mea hana-papa hana, i mea kūpono no ka hoʻāʻo maʻamau a me ka hoʻomaʻemaʻe kaʻina hana.

Hiki ke hoʻopilikino:
ʻO nā ana i hoʻonohonoho ʻia a me nā ʻano aniani e hōʻoia i ka hoʻohālikelike ʻana me kahi ākea o nā noi.

Hiki ke hoʻonui:
Hoʻopili ke anawaena 6-inihi me nā kūlana ʻoihana, e ʻae ana i ka scaling seamless i nā kaʻina hana-grade.

ʻO ka ikaika:
ʻO ka ikaika mechanical kiʻekiʻe a me ka paʻa wela e paʻa a paʻa i ka ingot ma lalo o nā kūlana hoʻokolohua like ʻole.

ʻAno kūpono:
He kūpono no nā ʻoihana he nui, mai nā ʻōnaehana ikehu a hiki i ke kamaʻilio a me ka optoelectronics.

Ka hopena

ʻO ka 6-inch Silicon Carbide (4H-SiC) semi-insulating ingot, dummy grade, hāʻawi i kahi kahua hilinaʻi a maʻalahi no ka noiʻi, prototyping, a me ka hoʻāʻo ʻana i nā ʻāpana ʻenehana ʻokiʻoki. ʻO kāna mau mea wela, uila, a me ka mechanical, i hui pū ʻia me ka affordability a me ka customizability, e lilo ia i mea waiwai nui no ka ʻoihana a me ka ʻoihana. Mai ka uila uila a hiki i nā ʻōnaehana RF a me nā mea paʻakikī paʻakikī, kākoʻo kēia ingot i ka hana hou i kēlā me kēia pae o ka hoʻomohala ʻana.
No nā kikoʻī kikoʻī hou aku a i ʻole ke noi ʻana i kahi ʻōlelo, e ʻoluʻolu e leka uila mai iā mākou. Ua mākaukau kā mākou hui ʻenehana e kōkua me nā ʻōlelo hoʻoponopono e hoʻokō i kāu mau koi.

Kiʻi kikoʻī

SiC Ingot06
SiC Ingot12
SiC Ingot05
SiC Ingot10

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